共查询到20条相似文献,搜索用时 31 毫秒
1.
Kusano C. Masuda H. Mochizuki K. Ishikawa Y. Kawata M. Mitani K. Miyazaki M. 《Electron Devices, IEEE Transactions on》1993,40(1):25-31
A new basic ohmic contact technology for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The effect of the device parameters on the high-frequency performance of HBT ICs for 10-Gb/s systems is analyzed, and it is shown that, at a cutoff frequency (f T) of 40 GHz or more, reducing base resistance or collector capacitance is more effective than increasing f T for obtaining high-frequency performance. A process is developed for fabricating base electrodes with a very low ohmic contact resistivity, ~10-7 Ω-cm2, by using a AuZn/Mo/Au alloy, which provides the required high performance. Self-aligned AlGaAs/GaAs HBTs, with a 2.5-μm×5-μm emitter, using a AuZn/Mo/Au alloy base metal and an undoped GaAs collector, are shown to have an f T and a maximum oscillation frequency of about 45 and 70 GHz, respectively, at 3.5 mA. An AGC amplifier with a 20-dB gain and a bandwidth of 13.7 GHz demonstrates stable performance 相似文献
2.
Seabaugh A.C. Beam E.A. III Taddiken A.H. Randall J.N. Kao Y.-C. 《Electron Device Letters, IEEE》1993,14(10):472-474
The authors report the first co-integration of resonant tunneling and heterojunction bipolar transistors. Both transistors are produced from a single epitaxial growth by metalorganic molecular beam epitaxy, on InP substrates. The fabrication process yields 9-μm2-emitter resonant tunneling bipolar transistors (RTBTs) operating at room temperature with peak-to-valley current ratios (PVRs) in the common-emitter transistor configuration, exceeding 70, at a resonant peak current density of 10 kA/cm2, and a differential current gain at resonance of 19. The breakdown voltage of the In0.53Ga0.47As-InP base/collector junction, V CBO, is 4.2 V, which is sufficient for logic function demonstrations. Co-integrated 9-μm2-emitter double heterojunction bipolar transistors (DHBTs) with low collector/emitter offset voltage, 200 mV, and DC current gain as high as 32 are also obtained. On-wafer S -parameter measurements of the current gain cutoff frequency (f T) and the maximum frequency of oscillation (f max) yielded f T and f max values of 11 and 21 GHz for the RTBT and 59 and 43 GHz for the HBT, respectively 相似文献
3.
Hayden J.D. Mele T.C. Perera A.H. Burnett D. Walczyk F.W. Lage C.S. Baker F.K. Woo M. Paulson W. Lien M. See Y.-C. Denning D. Cosentino S.J. 《Electron Devices, IEEE Transactions on》1992,39(7):1669-1679
A high-performance 0.5-μm BiCMOS technology has been developed. Three layers of polysilicon are used to achieve a compact four-transistor SRAM bit cell size of less than 20 μm2 by creating self-aligned bit-sense and V ss contacts. A WSix polycide emitter n-p-n transistor with an emitter area of 0.8×2.4 μm2 provides a peak cutoff frequency (f T) of 14 GHz with a collector-emitter breakdown voltage (BV CFO) of 6.5 V. A selectively ion-implanted collector (SIC) is used to compensate the base channeling tail in order to increase f T and knee current without significantly affecting collector-substrate capacitance. ECL gate delays as fast as 105 ps can be obtained with this process 相似文献
4.
AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 105 A/cm 2. For a transistor with a 2-μm×10-μm collector, f T was 70 GHz and f max was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz 相似文献
5.
Sato H. Vlcek J.C. Fonstad C.G. Meskoob B. Prasad S. 《Electron Device Letters, IEEE》1990,11(10):457-459
Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J c>30 kA/cm2) and high base-emitter junction saturation current density (J 0>10-7 A/cm2) were achieved. A cutoff frequency of f t=24 GHz and a maximum frequency of oscillation f max=20 GHz at a collector current density of J 0 =23 kA/cm2 were achieved on a nominal 5-μm×10-μm device 相似文献
6.
《Electron Devices, IEEE Transactions on》1990,37(1):153-158
The fabrication of a silicon heterojunction microwave bipolar transistor with an n+ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 kΩ/□ a base width 0.1 μm, a maximum current gain of 21 (V CE=6 V, I c=15 mA), and an emitter Gummel number G E of about 1.4×1014 Scm-4. From the measured S parameters, a cutoff frequency f t of 5.5 GHz and maximum oscillating frequency f max of 7.5 GHz at V CE=10 V, I c=10 mA are obtained 相似文献
7.
Lee W.-S. Enoki T. Yamahata S. Matsuoka Y. Ishibashi T. 《Electron Devices, IEEE Transactions on》1992,39(12):2694-2700
A self-aligned process is developed to obtain submicrometer high-performance AlGaAs/GaAs heterojunction bipolar transistors (HBTs) which can maintain a high current gain for emitter sizes on the order of 1 μm2. The major features of the process are incorporation of an AlGaAs surface passivation structure around the entire emitter-base junction periphery to reduce surface recombination and reliable removal of base metal (Ti/W) deposits from the sidewall by electron cyclotron resonance (ECR) plasma deposition of oxide and ECR plasma etching by NF3. A DC current gain of more than 30 can be obtained for HBTs with an emitter-base junction area of 0.5×2 μm2 at submilliampere collector currents. The maximum f T and f max obtained from a 0.5×2 μm2 emitter HBT are 46 and 42 GHz, respectively at I C=1.5 and more than 20 GHz even at I C=0.1 mA 相似文献
8.
Tamaki Y. Shiba T. Kure T. Ohyu K. Nakamura T. 《Electron Devices, IEEE Transactions on》1992,39(6):1387-1391
A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm2, and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (f T) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between f T and base resistance is also discussed 相似文献
9.
Very-high-performance common-emitter InP/InGaAs single heterojunction bipolar transistors (HBTs) grown by metalorganic molecular beam epitaxy (MOMBE) are reported. They exhibit a maximum oscillation frequency (f T) of 180 GHz at a current density of 1×105 A/cm2. this corresponds to an (R BC BC)eff=f T/(8πf 2max) delay time of 0.12 ps, which is the smallest value every reported for common-emitter InP/InGaAs HBTs. The devices have 11 μm2 total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV CEO and BV CEO of 8 and 17 V, respectively 相似文献
10.
Slater D.B. Jr. Enquist P.M. Chen M.Y. Hutchby J.A. Morris A.S. Trew R.J. 《Electron Device Letters, IEEE》1991,12(7):382-384
The total emitter-to-collector delay for a p-n-p AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been reduced to 5.7 ps by extending the cutoff frequency for these devices to the millimeter-wave range. A total charging delay of 1.2 ps was obtained by a lightly doped emitter and by reducing the collector resistance. Low transit delays totaling 4.5 ps were achieved with a thin (440 Å) uniformly doped base and a thin (2800 Å) collector. The reduction in these delays permitted a non-self-aligned (1-μm emitter mesa/base contact separation) device with two emitters (2.6×10 μm2 each) and a single base contact to exhibit an f t of 28 GHz 相似文献
11.
Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been fabricated on a Si substrate. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 μm×19 μm. The S parameters were measured for various bias points. In the case of I C=15 mA, f T was 59 GHz at V CE=1.8 V, and f max was 69 GHz at V CE=2.3 V. Due to the InP collector, breakdown voltage was so high that a V CE of 3.8 V was applied for I C=7.5 mA in the S -parameter measurements to give an f T of 39 GHz and an f max of 52 GHz 相似文献
12.
A two-dimensional numerical study of the parasitic effects on current gain β and cutoff frequency f T of the emitter-down configuration of AlGaAs-GaAs double-heterojunction bipolar transistors (DHBTs) is reported. The studied structures include: those with and without the extrinsic emitter regions; a structure with oxygen implantation in the extrinsic emitter region; and two structures with P + dopant implantation of 1000 and 300 Å into the extrinsic emitter region. Analysis of the structures with and without the extrinsic emitter region shows that parasitic effects associated with the extrinsic emitter seriously degrade β and f T , and lead to extremely asymmetric DHBT operation. The three structures with the extrinsic emitter region modified by the implantations exhibit improved β and f T at low bias. However, the effectivenesses of the implant approaches in minimizing the parasitics are quite different 相似文献
13.
Slater D.B. Jr. Enquist P.M. Najjar F.E. Chen M.Y. Hutchby J.A. Morris A.S. Trew R.J. 《Electron Device Letters, IEEE》1991,12(2):54-56
The diffusion coefficient (D h) and a value for the collector velocity (v h) of holes in AlGaAs/GaAs P-n-p HBTs (heterojunction bipolar transistors) were obtained from high-frequency measurements on structures with different base and collector widths. Quantities for D h and v h of 5.6 cm2/s and 5.5×106 cm/s, respectively, were obtained by plotting the total emitter-collector delay versus inverse emitter current and extrapolating the data to infinite emitter current to obtain the base and collector transit delays. An f t and f max as high as 15 and 29 GHz, respectively, were obtained for non-self-aligned (1-μm emitter mesa/base contact separation) devices with a 2.6-μm×10-μm emitter 相似文献
14.
Nonequilibrium electron transport phenomena in the emitter and collector regions under high bias conditions were investigated for standard N-p-n (AlGa)As/GaAs heterojunction bipolar transistors (HBTs) by utilizing a previously developed one-dimensional self-consistent particle simulator. A dramatic increase in the cutoff frequency was observed for a lightly doped collector HBT as the current density increased over 105 A/cm2, where the collector transit time was reduced due to the extension of the velocity overshoot region in the collector corresponding to the decrease in electric field near onset of the Kirk effect. A saturation tendency was seen in the collector current versus base-to-emitter bias voltage (V BE ) characteristic for high V BE, where V BE exceeded the base-to-emitter built-in voltage of the conduction band. Simulations indicate that this feature is caused by electron velocity saturation in the neutral n-type (AlGa)As emitter region 相似文献
15.
Kim M.E. Oki A.K. Gorman G.M. Umemoto D.K. Camou J.B. 《Microwave Theory and Techniques》1989,37(9):1286-1303
GaAs-AlGaAs n-p-n heterojunction bipolar transistor (GaAs HBT) technology and its application to analog and microwave functions for high-performance military and commercial systems are discussed. In many applications the GaAs HBT offers key advantages over the alternative advanced silicon bipolar and III-V compound field-effect-transistor (FET) approaches. TRW's GaAs HBT device and IC fabrication process, basic HBT DC and RF performance, examples of applications, and technology qualification work are presented and serve as a basis for addressing general capability issues. A related 3-μm emitter-up, self-aligned HBT IC process provides excellent DC and RF performance, with simultaneous gain-bandwidth product, f T, and maximum frequency of oscillation, f max, of approximately 20-40 GHz and DC current gain β≈50-100 at useful collector current densities ≈3-10 kA/cm2, early voltage ≈500-1000 V, and MSI-LSI integration levels. These capabilities facilitate versatile DC-20-GHz analog/microwave as well as 3-6 Gb/s digital applications, 2-3 G sample/s A/D conversion, and single-chip multifunctions with producibility 相似文献
16.
Mishra U.K. Brown A.S. Delaney M.J. Greiling P.T. Krumm C.F. 《Microwave Theory and Techniques》1989,37(9):1279-1285
The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1-μm gate length had a transconductance g m=1080 mS/mm and a unity current gain cutoff frequency f T=178 GHz, whereas similar pseudomorphic HEMTs had g m=1160 mS/mm and f T=210 GHz. Single-stage V -band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of F min=0.8 dB with a small-signal gain of G a=8.7 dB 相似文献
17.
Yamaguchi T. Uppili S. Lee J.S. Kawamoto G.H. Dosluoglu T. Simpkins S. 《Electron Devices, IEEE Transactions on》1993,40(8):1484-1495
Process and device parameters are characterized in detail for a 30-GHz f T submicrometer double poly-Si bipolar technology using a BF2-implanted base with a rapid thermal annealing (RTA) process. Temperature ramping during the emitter poly-Si film deposition process minimizes interfacial oxide film growth. An emitter RTA process at 1050°C for 30 s is required to achieve an acceptable emitter-base junction leakage current with an emitter resistance of 6.7×10-7 Ω-cm2, while achieving an emitter junction depth of 50 nm with a base width of 82 nm. The primary transistor parameters and the tradeoffs between cutoff frequency and collector-to-emitter breakdown voltage are characterized as functions of base implant dose, pedestal collector implant dose, link-base implant dose, and epitaxial-layer thickness. Transistor geometry dependences of device characteristics are also studied. Based on the characterization results for poly-Si resistors, boron-doped p-type poly-Si resistors show significantly better performance in temperature coefficient and linearity than arsenic-doped n-type poly-Si resistors 相似文献
18.
A theoretical investigation of Si/Si1-xGex heterojunction bipolar transistors (HBTs) undertaken in an attempt to determine their speed potential is discussed. The analysis is based on a compact transistor model, and devices with self-aligned geometry, including both extrinsic and intrinsic parameters, are considered. For an emitter area of 1×5 μm2, an f t of over 75 GHz and f max of over 35 GHz were computed at a collector current density of 1×10 5 A/cm2 and V CB of 5 V 相似文献
19.
Nguyen L.D. Radulescu D.C. Tasker P.J. Schaff W.J. Eastman L.F. 《Electron Device Letters, IEEE》1988,9(8):374-376
The authors report the DC and RF performance of nominally 0.2-μm-gate length atomic-planar doped pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As modulation-doped field-effect transistors (MODFETs) with f T over 120 GHz. The devices exhibit a maximum two-dimensional electron gas (2 DEG) sheet density of 2.4×1012 cm-2, peak transconductance g m of 530-570 mS/mm. maximum current density of 500-550 mA/mm, and peak current-gain cutoff frequency f T of 110-122 GHz. These results are claimed to be among the best ever reported for pseudomorphic AlGaAs/InGaAs MODFETs and are attributed to the high 2 DEG sheet density, rather than an enhanced saturation velocity, in the In0.25Ga0.75As channel 相似文献
20.
Zhang Q.M. Tan G.-L. Moore W.T. Xu J.M. 《Electron Devices, IEEE Transactions on》1992,39(11):2430-2437
Two-dimensional simulations that demonstrate the effects of displacements of the p-n junctions from the heterojunctions of symmetrical Al0.28Ga0.72/GaAs double-heterojunction bipolar transistors (DHBTs) are reported. When the emitter and/or collector p-n junctions do not coincide with the AlGaAs/GaAs heterojunctions, the electrical characteristics are shown to be drastically altered due to changes in the potential profiles and to changes in recombination rates both in the neutral base and in the space-charge region of the emitter. The effects of a small displacement of the p-n junction from the emitter-base or the base-collector heterojunctions are examined and results for current gain β and cutoff frequency f T are given that demonstrate enhanced performance for DHBTs with p-n junctions that are not coincident with the heterojunctions 相似文献