一种改进的定时误差检测算法

定时恢复环路是数字接收机同步模块的一个重要组成部分,Gardner算法以实现结构简单,不敏感于载波相位,独立于调制方式等优点作为定时误差检测算法广泛应用于数字接收机的定时恢复环路中。鉴于Gardner算法在数字接收机定时同步中的广泛应用,并通过比较Gardner算法及其改进算法的定时抖动和捕获性能,研究了一种改进的Gardner定时误差检测算法。仿真结果表明,该算法对于MPSK恒包络的调制信号定时抖动性能有很明显的改善,并且在小滚降因子下改善仍然成立,但是对于16QAM非恒包络的调制信号改善不理想。     

一种适用于APSK信号的位定时误差检测改进算法

APSK调制在新一代卫星广播系统中得到广泛应用。本文研究了APSK信号的位定时恢复环路,提出将一种Gardner位定时误差检测改进算法应用于该环路,并仿真比较了采用传统DD-Gardner位定时误差检测算法与采用新的改进算法的位定时恢复环路的时钟捕获和跟踪性能。     

基于Laurent分解的GMSK定时同步环路

定时同步是数字调制信号接收不可或缺的环节。对于GMSK信号定时同步,现有算法多为数据辅助或前馈类算法。从GMSK信号的Laurent分解出发,结合Gardner定时同步环路,提出了一种基于Laurent分解的GMSK信号定时同步环路。该环路采用2 bit差分来提取定时误差,用于控制内插时刻,环路简单,运算量小,易于工程实现。仿真结果表明,即使对于小BT值GMSK信号,该方法依然可以有效提取定时误差,且具有较强的抗噪声性能。     

全数字接收机码元同步的研究

在数字通信中,码元同步的目的是要在接收端确定每个码元符号的正确起止时刻。码元同步是数字通信的诸多同步中首要的问题,没有码元同步,就无法解调出所传输的数字信息。本文采用Gardner定时误差估计算法对全数字接收机的码元同步环路进行了研究和仿真分析。该同步环路由内插滤波器、Gardner定时误差检测、环路滤波器、定时NCO...     

QAM接收机的定时误差估计算法的研究

定时恢复是全数字接收机中的一项关键技术。以Gardner定时误差检测算法为基础,从理论上对算法的计算复杂度、以及整个定时恢复环路实现的难易程度对其进行分析。以64QAM为例对整个环路进行了仿真验证,该算法对载波相位不敏感,并且简单易行,适用于QAM信号的定时恢复。     

一种并行的定时同步环路实现研究

定时恢复是全数字接收机中的核心部分之一,其处理速度制约了整个接收机的最高处理速度。在传统Gardner定时环路的实现基础上,提出了一种适用于高速数字接收机中定时同步环路的并行控制方式。它通过采用并行处理的方法,为符号同步环路中的内插滤波器提供插值相位来实现插值功能,并且降低了定时同步环路的工作时钟。 MATLAB仿真证明这种插值滤波控制器在降低定时同步环路工作时钟频率的同时,定时恢复性能并未受到影响。     

基于System Generator的Gardner算法的建模与实现

为了在数字无线通信中实现位同步,设计一种基于Gardner算法的位同步系统.该系统由定时误差检测,环路滤波器,内插滤波器以及控制器模块组成,运用Xilinx公司高级系统级FPGA开发工具System Generator实现对各个模块的建模和实现.结果表明Gardner算法只需每个符号周期内采样2次,就能算出定时误差,并且对载波相位不敏感,这就使得Gardner算法的结构简单、运算量小,从而能够得到广泛应用.     

Gardner算法实现基带信号位同步技术探讨

利用Gardner算法实现基带信号位同步,能比较好地解决基带信号频率与本地时钟频率不同步的问题。系统位同步环路由插值器,TED误差检测器,环路滤波器和控制器组成,利用对经本地时钟采样后的基带信号内插产生的误差信号经TED,环路滤波传送到控制器,再从NCO提取误差控制参数反馈到内插器,不仅可以计算出最佳插值位置,也可以得到具体最佳值的大小。实际验证该系统具有良好的性能,且结构简单,易于实现,适用于高速数字接收机的调制解调系统。     

QAM接收机定时抖动问题的研究

定时抖动是QAM接收机定时同步的重要性能指标,对两种减小定时抖动的方法进行了分析,第一种是改进的Gardner算法,另一种是在定时环路中插入环路预滤波器的方法。通过对以上两种方法的研究和对比,二者都能减小环路的定时抖动,但二者在性能和资源消耗上有一定区别,实际应用中根据系统的要求做出选择。     

用于微弱信号及扭矩检测的容栅式扭矩传感器

在对扭矩信号的检测中，传统的扭矩检测方法存在抗干扰能力弱、响应速度慢、准确度较低的不足。为了改善该问题，提出一种基于典型电容电桥和负反馈控制环路相结合的容栅式扭矩传感器电路来检测扭矩的变化。其中负反馈控制环路由控制信号和移相器组成，可用于补偿因电路自身结构和外部噪声干扰所导致的相位偏移，进一步提高了检测电路的准确性。该检测电路首先通过桥式电路将电容信号转变为电压信号，然后经过比较器输出传感器通道和参考通道的相位信息，最后根据相位信息生成的控制信号来补偿信号的相位，从而准确计算出扭矩的大小。并对检测系统进行了仿真和测试。测试结果表明：该方法能够将微弱电容信号灵敏度减小到1%以下，扭转角误差减小到0.001 3 rad以下，可以有效减小噪声的干扰，从而准确、快速地测量出动态扭矩信息。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.