基于McBSP的TMS320C6713异步串行通信的实现

为了解决TMS320C6713与GPRS模块间的接口问题,提出了一种基于多通道缓冲串口(McBSP)与专用异步收发器(MAX3111)的扩展方式。简要介绍了TMS320C6713的MCBSP接口和MAX3111芯片,并结合McBSP和MAX3111各自的特点,提供一种基于SPI通信方式的异步串行通信方案。该方案软、硬件设计简单,易于实现。     

基于TMS320C6713的多路CVSD语音编解码

介绍一种对语音信号的实时采样和编码处理的方法.该系统采用高精度可编程芯片TLV320AIC23B时多路原始语音信号进行模数转换后经DSP的片上外设MCBSP送入TMS320C6713进行CVSD编码压缩,之后又由MCBSP送出,同时MCBSP接收多路A律PCM信号,经TMS320C6713转换成CVSD信号后由MCBSP送出,TMS320C6713亦可接收CVSD编码信号转化成A律PCM信号后送出.该系统充分发挥了DSP的高速数字信号处理的性能,同时处理多路信号收发及数字运算具备非常好的实时性.     

基于TMS320C6713的USB数据传输系统设计

介绍了基于TMS320C6713的USB数据传输系统。该系统以TMS320C6713作为主控制器,通过CY7C68001USB控制器连接TMS320C6713与PC主机,克服了传统的数据传输量小,传输速度慢的缺点,能更好地满足大容量数据的传输要求。在此详细阐明了系统的硬件设计方案和软件设计思想,并进行实现。结果证明,研制的系统具有传输速率高,可靠性好的优点。     

基于SC16C554B的TMS320F2812的UART总线扩展

随着TMS320F2812在数字控制处理领域的应用越来越广泛,以及多串口异步通信在数据通信方式中主导地位的形成,利用TMS320F2812与外界进行多串口异步通信的设计显得尤为重要.文中以NXP(恩智浦)公司的4通道通用异步收发器SC16C554B为例,研究了理想的TMS320F2812的UART总线扩展方案.该方案硬件连接简单,软件编程方便,按照该方案设计的某控制接口,完全满足了TMS320F2812的UART总线扩展,具有较强的工程实用价值.     

基于TMS320C6713B的实时数字视频消旋系统设计

针对探测器姿态变化造成的视频图像旋转,提出一种基于TMS320C6713B的实时数字视频消旋系统.该系统利用TMS320C6713B计算图像旋转后各点的位置,再利用FPGA进行地址映射,得到图像旋转后各点对应的灰度值.实验证明该系统能够实时消除视频图像的旋转,且消旋后的图像清晰稳定,满足实际应用要求.     

基于浮点DSP的语音实时处理器的实现

首先简单介绍了G．729语音编解码标准以及设计中所采用的芯片TMS320C6713和TLV320AIC23B；然后详细阐述了该语音处理器的硬件接口设计和软件程序设计，并对源代码在CCS（Code Composer Studio）下进行了优化；最后在TMS320C6713上实现了语音的实时处理。     

基于DSP-TMS320C6713控制系统的最小系统板的设计

TMS320C6713是由TI公司生产的高精度浮点型DSP芯片。基于DSP6713设计的最小系统板对与DSP有关的科研试验以及工程等领域有着重要的应用价值。主要研究并介绍基于DSP-TMS320C6713控制系统的最小系统板的硬件设计,并就最小系统板设计过程中的注意事项做了详尽阐述。针对电源电路、复位电路、时钟电路、JTAG接口电路、扩展板接口电路和外部存储器扩展电路,提出可行的设计方案,该方案已作为模板电路实现。     

基于DSP的局域增强系统地面子系统数据通信与接口实现

针对局域增强系统地面子系统中导航信息数据量大、实时性要求高的特点以及当前 DSP 信息处理的能力,设计实现了基于 DSP 的局域增强系统地面子系统导航数据通信。设计中采用 TL16C752B 串口芯片和 FPGA 扩展串口接收 GPS 数据,采用 TMS320C6416 实现 GPS 数据的实时处理,实现了 GPS 数据的实时接收和处理。     

TMS320C6713在双通道数字去噪声系统中的应用

在双通道数字去噪声系统中,采用德州仪器（TI）公司的高性能浮点DSP TMS320C6713作为核心处理器进行数字去噪处理．采用EMIF接口、CY7C68001接口器件、MAX3160接口器件分别实现DSP同双路MD转换模块、USB接口以及RS232串口通信。     

基于麦克风阵列声源定位的硬件系统设计

给出一种基于TMS320C6713的麦克风阵列声源定位系统。以DSP作为系统的核心控制器,通过TMS320C6713的McASP接口与A／D芯片PCM4204连接,克服了单片机系统运算能力有限,数据处理速度慢的缺点,能更好地满足麦克风阵列声源定位的要求。介绍了系统的硬件设计方案和软件设计思想,实践证明了系统具有实时高速、精度高及可靠性好的优点。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.