Improvement of white organic light emitting diode performances by an annealing process

White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m², respectively. The annealing technique at relatively low temperature (50 °C, 100 °C, and 150 °C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 °C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m² were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.     

Surface displacement imaging by interferometry with a light emitting diode

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented.     

High-speed, whole-column fluorescence imaging detection for isoelectric focusing on a microchip using an organic light emitting diode as light source

An integrated and simplified microfluidic device using a 250 microm x 1-4 cm of organic light emitting diode (OLED) array as a two-dimensional light source for single-channel and multichannel whole-column imaging detection was developed. This fluorescence detection system was used for isoelectric focusing (IEF) of R-phycoerythrin in a microchip. The IEF conditions were optimized, and the total analysis time was extremely reduced to 30 s for 2-cm-long microchannels at 700 V/cm of electric field strength without the presence of electroosmotic flow. The compression of pH gradient caused by electrolytes drawing into the microchannels was efficiently restrained when 1% hydroxylpropylmethyl cellulose in 2% ampholyte was used as the carrier for IEF. Under optimized IEF conditions, the detection limit of this system was approximately 0.6 microg/mL or 45 pg at 75 nL/column injection of R-phycoerythrin. This OLED-induced fluorescence detection system for WCID provides a high-speed IEF technique with quantitative ability and the potential for high integration and throughput microchip systems.     

Bi-layer gravure printed nanoscale thick organic layers for organic light emitting diode

The gravure printed single layer structure and bi-layer structure of MEH-PPV/rubrene organic light emitting diodes (OLEDs) were investigated in this work. Typically, the formation of bi-layers in polymer light emitting diodes (PLEDs) is challenging. The brightness and efficiency polymer light emitting materials were enhanced by the gravure printed bi-layer structure in this work. The layer structure of the OLED devices was glass/ITO/PEDOT:PSS/active layer/LiF/Al. The active layers were made using two different processes-one was a gravure printed single organic layer made of a blended mixture of MEH-PPV and rubrene, and the other was a gravure printed bi-layer of MEH-PPV and rubrene. The gravure printed bi-layer devices exhibited a higher brightness and efficiency than the blended devices. The efficiency of the bi-layer MEH-PPV/rubrene structure was improved by a factor of 1.6 approximately 3.2, and the brightness was improved by a factor of 1.9 approximately 2.0 compared to the blended single layer structure. This work demonstrated that organic bi-layers could be formed using gravure printing technology and the bi-layer structure exhibited a higher efficiency than the blended single layer structure.     

Experimental study of the organic light emitting diode with a p-type silicon anode

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO₂ buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m² at 17 V and 1800 mA/cm², the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO₂ buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode.     

有机发光器件(ITO/TPD/Alq3/Mg/Al)的光电性能研究

为了研究有机电致发光器件光电性能随工作参数的变化，对ITO／TPD(50nm)／AIq3(50nm)／Mg／Al的实验数据进行分析，发现该器件在低压时属于注入电流限制，高压时为陷阱电荷限制(TCLC)。另外，采用实验数据验证复合理论，发现通过电场数据和电流密度数据(F^2／J)能够直接地反映器件量子效率随电流密度的变化趋势。     

A multi-source portable light emitting diode spectrofluorometer

A portable luminescence spectrofluorometer weighing only 1.5 kg that uses multiple light emitting diodes (LEDs) as excitation sources was developed and evaluated. Excitation using a sequence of seven individual broad-band LED emission sources enabled the generation of excitation-emission spectra using a light weight (<1.5 kg) spectrometer. Limits of detection for rhodamine 6G, rhodamine B, and fluorescein were 2.9, 3.2, and 11.0 nM, respectively. Generation of excitation-emission matrices (EEMs) enabled the analysis of samples containing mixtures of rhodamine B and fluorescein. Buffered saline plant and animal feed extracts were also analyzed using this instrument. These samples included the woody plants Pistacia lentiscus (Evergreen pistache or Mastic) and Philyria latifolia, and the herbaceous species Medicago sativa (alfalfa), Trifolium spp. (clover), and a feed concentrate. Application of multi-way principal component analysis (MPCA) to the resulting three-dimensional data sets enabled discernment among these various diet constituents.     

Thermal resistance of light emitting diode PCB with thermal vias

Light emitting diodes (LEDs) are already familiar for use as lighting sources in various electronic devices and displays. LEDs have many advantages such as long life, low power consumption, and high reliability. In the future, as an alternative to fluorescent lighting, LEDs are certain to receive much attention. However, in components related to advanced LED packages or modules there has been an issue regarding the heat from the LED chip. The LED chip is still being developed for use in high-power devices which generate more heat. In this study, we investigate the variation of thermal resistance in LED modules embedded with thermal vias. Through the analysis of thermal resistance with various test vehicles, we obtained the concrete relationship between thermal resistance and the thermal via structure.     

大功率白光发光二极管光源的制作

采用GaN基蓝色发光芯片为激发源,结合黄色硅酸盐系列荧光粉封装成大功率白光发光二极管(W-LEDs).利用24颗大功率5W白光发光二极管制作了两种不同连接方式的W-LEDs路灯:2并12串,和4并6串.设计了相应的驱动电路,对这两种不同连接方式的大功率W-LEDs路灯的光电特性及其在照明光源中的应用条件作了深入地研究和对比,测试了它们的伏安特性,发光效率以及功效,结果表明2并12串连接方式的W-LEDs路灯具有更加稳定的伏安特性,更高的照度以及更高的功效.与高压钠灯和荧光灯的特性相比较,W-LEDs路灯作为绿色环保光源灯,具有更高的显色指数,更加环保,节能.     

Phosphorescence color tuning of oxadiazole-based iridium(III) complexes for organic light emitting diode

The new heteroleptic iridium complexes bearing 2-(5-phenyl-1,3,4-oxadiazol-2-yl)phenolate (ODZ), were synthesized and characterized for application to organic light-emitting diodes (OLEDs). As main ligands (C^N), the anions of 2-phenylpyridine (ppy), 2-phenylquinoline (pq) and 2-(2,4-difluorophenyl)pyridine (F2-ppy) were chelated to the iridium center and 2-(5-phenyl-1,3,4-oxadiazol-2-yl)phenolate (ODZ) was introduced as an ancillary ligand for luminescence modulation of their iridium complexes. We expected that the relative energy levels of the main and ancillary ligands in the complexes could lead to emission color tuning and luminous efficiency improvement by possible inter-ligand energy transfer (ILET). The photoabsorption, photoluminescence and electroluminescence of the complexes were studied. Ir(F2-ppy)2(ODZ), Ir(ppy)2(ODZ) and Ir(pq)2(ODZ) exhibited the photoluminescence maxima between 505-610 nm at room temperature in CH2Cl2, depending on both main and ancillary ligands. The longer pi conjugation in the cyclometallating pq ligands leads to the bathochromic shift in luminescence of their iridium complexes. The electroluminescent properties of the complexes were influenced by ILET.     

Enhance current injection of organic light emitting diodes by inserting an organic superlattice

Poor electron injection is a great concern for organic light emitting diodes (OLEDs). In order to improve the electron mobility, inserting organic superlattice structures in the electron transport layer was investigated in conventional OLEDs configuration. The superlattices are composed of alternating tris(8-hydroxyquinoline aluminium (Alq₃) and copper phthalocyanine (CuPc) thin films, which are used as electron and hole injection layers. Experimental results show superlattices with a 6-nm period have the largest injected current. Reduction of turn-on voltage and resistance of superlattice OLEDs were also observed. After thermal annealing, the current-voltage characteristic changes and shows the possibility of layer intermixing in organic superlattices.     

Out-coupling efficiency enhancement of organic light emitting diode device by SiO2-UV hardener composite layer

The enhancement of out-coupling efficiency of organic light emitting diode (OLED) using SiO2-polymer composite layers was investigated. The SiO2-polymer composite was made from a SiO2 nanopowder and commercial UV-hardeners. The composite layer was coated on glass by dip-coating method in a SiO2 suspension, followed by spin-coating of 1 microm thick UV-hardener of was found that the optical properties were depend on the quantity of SiO2 nanopowder in the composite layer and dispersion of SiO2 suspension. 194/440 nm size of SiO2 nanopowders were added to the composite layer to enhance the light scattering effect. The OLED device which the SiO2-polymer composite layer was applied showed enhanced out-coupling efficiency around 30%.     

Optical constants of platinum octaethyl porphyrin in single-layer organic light emitting diode studied by spectroscopic ellipsometry

We studied the optical properties of platinum octaethyl porphyrin (PtOEP) emitting layer in single-layer organic light emitting diode (OLED) device and in thin film grown on quartz plate using a phase modulated spectroscopic ellipsometry. Spectra of optical constants (refractive index n and extinction coefficient k) were obtained for PtOEP in the visible-ultraviolet spectral range. Difference was observed in the n and k spectra between the thin film evaporated on quartz plate and the encapsulated OLED. Additionally, difference was found between the layer thickness estimated by quartz oscillator and thickness estimated from the ellipsometry measurement. Discussion is given on contamination by oxygen and moisture in the unsealed thin film.     

MOCVD growth of strain-compensated multi-quantum wells light emitting diode

In the present paper, strain-compensated multi-quantum wells (SCMQW) InGaAs/GaAsP grown by low-pressure metal organic chemical vapour deposition (MOCVD) were used as the active layers of near infrared LED. The single nude LED chip was put down on the copper header p-side down, using a GaAs transparent substrate and AuBe alloy mirror reflector. The forward voltage under a bias current of 20 mA was measured to be 1.2 V while the reverse voltage at 10 μA was 5-6 V. The output power of 10.5 mW and 18% quantum efficiency were obtained under a bias current of 50 mA.     

柔性有机薄膜电致发光显示材料及器件

有机薄膜电致发光显示器件(OLED)近年来得到了迅猛发展,是未来全固体平板式彩色显示器的重要候选者,其最大优势之一是可以制作成柔性显示器件。本文综述了柔性有机电致发光材料及器件的发展概况、工作原理与优缺点,目前制作此类器件中存在的困难及解决这些困难的有效措施。     

Room temperature current injection polariton light emitting diode with a hybrid microcavity

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.