GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究

为研制全集成光开关、微片式激光器等，对ＧａＡｓ、ＧａＰ、ＩｎＧａＡｓＰ、ＩｎＡＩＧａＡｓ、ＡｌＧａＡｓ等材料的化学腐蚀进行了实验研究。为了研制ＩｎＡｌＧａＡｓ／ＩｎＡｌＡｓ／ＩｎＡｌＧａＡｓ微片式激光器，开发了Ｈ３ＰＯ４／Ｈ２Ｏ２／Ｈ２Ｏ薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ选择性腐蚀液；为了研制ＩｎＧａＡｓＰ／ＩｎＰ／ＩｎＧａＡｓＰＴｂａｒ型光波导，开发了ＨＣｌ／Ｈ３ＰＯ４／Ｈ２Ｏ２薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ２选择性腐蚀液；为了研制ＧａＰ、ＩｎＧａＰ光波导，开发了ＨＣｌ／ＨＮＯ３／Ｈ２Ｏ薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外，蚀刻成的ＧａＰ光波导侧壁平滑无波纹起伏。此种结果尚未见报导。     

Al0.85Ga0.15As/GaAs太阳能电池器件工艺优化研究

报道了优化的ｐ－ｎ型Ａｌ０．８５Ｇａ０．１５Ａｓ／ＧａＡｓ太阳能电池器件工艺。分别采用真空蒸发Ｃｒ／Ａｕ和ＡｕＧｅＮｉ／Ａｕ制作下面栅线和背面电极,并分别在４５０℃和３５０℃下快速合金化形成欧姆接触。采用ＮＨ４ＯＨ：Ｈ２Ｏ２：Ｈ３ＰＯ４：Ｈ２Ｏ体系的选择性腐蚀液去除高掺杂的ＧａＡｓ接触层。采用真空蒸发技术制备ＺｎＳ／ＭｇＦ２双层复合减反射层。测试结果表明,采用优化工艺制备的器件的光电转换效率得到了     

用MOCVD在非平面衬底上生长的量子阱、量子线及其光学性质

本文报道在６５０℃的衬底温度下实现了ＭＯＣＶＤ在（１００）面和（１１１）面上生长ＧａＡｓ与Ａｌ０．４Ｇａ０．６Ａｓ的不同的选择性．这一衬底温度比国际上以前报道的要低，对制作适于光电器件的ＧａＡｓ／ＡｌＧａＡｓ量子阱层比较有利．用此技术，在ＧａＡｓ非平面衬底上生长了ＧａＡｓ／Ａｌ０．４Ｇａ０．６Ａｓ量子阱，并用扫描电镜、低温光致发光谱以及偏振激发的光反射率谱技术进行了研究．结果不仅证明了ＭＯＣＶＤ外延生长ＧａＡｓ和Ａｌ０．４Ｇａ０．６Ａｓ的独特选择性，也证明了在Ｖ字形沟槽底形成了量子线．     

2英寸高均匀性GaAs多层外延材料

用法国进口的ＧａＡｓＶＰＥ设备，采用ＡｓＣｌ）３／Ｈ＿２／Ｇａ体系，以ＳｎＣｌ＿４ｌ／ＡｓＣｌ＿３为掺杂液，生长了２英寸多层ＧａＡｓ外延材料，自行设计了反应器的热场分布，在反应器中增加了合适的搅拌器，用以改变反应器中气体流动情况。ＧａＡｓ外延层的浓度均匀性与厚度均匀性均小于５％。浓度均匀性的最佳值为３．７％，厚度均匀性的最佳值为１．５％，当外延层载流子浓度为１．９×１０￣（１７）ｃｍ￣（－３）时，室温迁移率达到４３９０ｃｍ￣２／Ｖ·ｓ。     

用MOCVD在非平面衬底上生长的量子阱,量子线及其光学性质

本文报道在６５０℃的衬底温度下实现了ＭＯＣＶＤ在（１００）面和（１１１）面上生长ＧａＡｓ与Ａｌ０．４Ｇａ０．６Ａｓ的不同选择性。这一衬底温度比国际上以前报道的要低，对制作适于光电器件的ＧａＡｓ／ＡｌＧａＡｓ量子阱层比较有利。用此技术，在ＧａＡｓ非平面衬底上生长了ＧａＡｓ／Ａｌ０．４Ｇａ０．６Ａｓ量子阱，并用扫描电镜、低温光致发光谱及偏振激发的光反射率谱技术进行了研究。结果不仅证明了ＭＣＣＶＤ外延生     

LP-MOCVD制备AlGaInP高亮度橙黄色发光二极管

利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ结构橙黄色发光二极管．引入厚层Ａｌ０．７Ｇａ０．３Ａｓ电流扩展层和Ａｌ０．５Ｇａ０．５Ａｓ－ＡｌＡｓ分布布拉格反射器（ＤＢＲ）．２０ｍＡ工作条件下，工作电压１．９Ｖ，发光波长峰值在６０５ｎｍ，峰值半宽为１８．３ｎｍ，管芯平均亮度达到２０ｍｃｄ，最大２９．４ｍｃｄ，透明封装成视角（２θ１／２）１５°的ＬＥＤ灯亮度达到１ｃｄ．     

GaAs（100）表面钝化和Mg／S／GaAs界面的SRPES研究

应用同步辐射光电子谱（ＳＲＰＥＳ）表征了一种新的ＣＨ３ＣＳＮＨ２／ＮＨ４ＯＨ溶液体系处理的ＧａＡｓ（１００）表面的成键特性和电子态．结果表明，经过处理的ＧａＡｓ（１００）表面，Ｓ既与Ａｓ成键也与Ｇａ成键，形成了Ｓ与ＧａＡｓ的新界面，这说明ＣＨ３ＣＳＮＨ２／ＮＨ４ＯＨ溶液处理的ＧａＡｓ（１００）表面具有明显的钝化作用．钝化表面退火处理后，发现ＡＳ的硫化物不稳定，分解或反应生成Ｇａ－Ｓ成分和元素态Ａｓ；室温下，Ｍｇ淀积硫钝化的ＧａＡｓ表面的实验结果表明，Ｍｇ置换ＧａＳ的Ｇａ成为金属Ｇａ偏析到表面，而硫以ＭｇＳ     

BaO－P_2O_5和R_2O－BaO－P_2O_5系统磷酸盐激光玻璃RAP法除

研究了熔炼温度和气相反应剂（ＣＣｌ４，ＳＯＣｌ２和ＰＯＣｌ３）对ＢａＯ－Ｐ２Ｏ５（Ｎ２１）和Ｒ２Ｏ－ＢａＯ－Ｐ２Ｏ５（ＨＬＣ－５）系统磷酸盐激光玻璃ＲＡＰ法除水速率的影响．讨论了Ｎ２１和ＨＬＣ－５型玻璃中Ｎｄ３＋的荧光寿命与ＯＨ基含量的关系，井对除水前后玻璃的激光性能和物理性质进行了比较。     

GaAs表面及AlxGa1—xAs／GaAsHBT外基区表面（NH4）2S／SiNx钝化工艺研究

分析了ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓＨＢＴ外基区表面复合电流及外基区复面复合速度对直接增益的影响，用光致发光（ＰＬ）谱和Ａｌ／ＳｉＮｘ－Ｓ／ＧａＡｓＭＩＳ结构ＣＶ特性，研究了ＧａＡｓ表面（ＮＨ４）２Ｓ／ＳｉＮｘ钝化工艺的效果及其稳定性。结果表明，ＥＣＲ－ＣＶＤ淀积ＳｉＮｘ覆盖并在Ｎ２气氛中退火有助于改善ＧａＡｓ表面硫钝化效果的稳定性，在此基础上形成了一套包括（ＮＨ４）２Ｓ处理，ＳｉＮｘＥＣＲ－ＣＶ     

硅基GaAs／GaAlAs平面光波导的研究

分析了金属有机化合物化学气相淀积（ＭＯＣＶＤ）ＧａＡｓ／ＧａＡｓＡｌ／ＧａＡｓ／Ｓｉ材料结构的性能，用ＭＯＣＶＤ法地硅衬底上生长了ＧａＡｓ／ＧａＡｓＡｌ／ＧａＡｓ材料，并用这种材料制备了平面光波导样品，测定了１．３μｍ，单模激光的传输损耗小于０．６５ｄＢ／ｃｍ。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.