High-responsivity intersubband infrared photodetector usingInGaAsP/InP superlattice

A 4-7-μm infrared detector made of an InGaAsP/InP short-period superlattice is demonstrated with materials grown by metalorganic chemical vapor deposition (MOCVD). A single current blocking layer of InP is used to reduce the dark current. At 40 K, the detector shows a low dark current of less than 4 pA at a bias voltage of 4 V. At 35 K, a peak responsivity of 4.0 A/W is obtained at 5.6 μm at a bias of 1 V     

Transverse junction waveguide InGaAs/lnP photodiode

A novel transverse InP/InGaAs/InP pn junction waveguide photodiode is demonstrated using in situ zinc diffusion before a regrowth step inside an organometallic vapour phase epitaxy reactor. The detector exhibits high speed, low leakage current, low capacitance and high breakdown voltage characteristics     

Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes

We report the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the ?=0.95 ?m to 1.65 ?m spectral region. The excess-noise measurements are consistent with a hole-to-electron ionisation rate ratio in InP of ~ 0.4. The receiver sensitivity, measured at 45 Mbit/s and 10?9 bit-error-rate, was ?53.2 dBm at a gain of 20 assuming unity quantum efficiency for the detector. This sensitivity is the highest reported at ?=1.3 ?m and represents an improvement over a PIN detector using the same amplifier.     

红外波段单光子探测器及其在量子通信领域中的应用

本文简要介绍了红外波段单光子探测器的种类，分析了InGaAs／InP雪崩光电二极管（InGaAs／InP APD）与超快超导单光子探测器（SSPD）的相关性能，并概述了二者在量子通信中的应用。     

利用双激光光源监测甲烷浓度的光吸收法光纤传感器

基于Lamber -Beer定律 ,利用波长为 1.3 3 μm的脉冲lnP/InGaAsP半导体激光器作为测量光源 ,用低损耗的光纤进行光信号的传输并以钽酸锂热释电探测器作光电转换器件 ,设计出了一种新颍的远距离监测甲烷浓度的光纤传感系统。以此光纤传感系统为探头 ,设计出了一种可实时监测甲烷浓度的仪器 ,并能实现 3km的远距离遥测。介绍了该光纤传感系统及由该光纤传感系统构成的监测仪器的基本结构与工作原理 ,讨论了其中的技术难点及其相应的解决方法 ,并给出了监测仪器相应的技术指标     

High performance of Fe:InP/InGaAs metal/semiconductor/metalphotodetectors grown by metalorganic vapor phase epitaxy

An InGaAs metal-semiconductor-metal (MSM) photodetector with an Fe-doped InP Schottky barrier enhancement layer is described. With 5-V bias, the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 A/W, and an impulse response with a 1/ e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FETs     

Pixelless imaging device using optical up-converter

A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 /spl mu/m optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 /spl mu/m, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.     

LBIC技术研究InGaAs线列探测器串音及光敏感区

利用激光诱导电流技术研究了InGaAs台面探测器的相邻探测器间的串音和光敏感区。用分子束外延方法生长掺杂InGaAs的PIN InP/InGaAs/InP 外延材料,制备了256×1正照射台面InGaAs线列探测器。测试结果表明,InGaAs线列探测器相邻探测器间没有串音,虽然台面结构周围吸收层已被腐蚀,但因为少数载流子的侧向收集,扩大了有效光敏感区。     

High-performance Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates

Reports the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GaInAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260 mS/mm. An excellent receiver response to 1.7 Gbit/s NRZ signals has been obtained.<>     

Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3-1.55 mu m optical receivers

An optical receiver front-end consisting of a lateral interdigitated GaInAs pin detector integrated with an InP JFET amplifier has been fabricated. This lateral detector structure simplifies the GaInAs material growth requirement to a single layer and provides low capacitance. A quasiplanar approach has been developed in conjunction with a two-level metallisation interconnect scheme. An optical sensitivity of -29 dBm was measured at 560 Mbit/s and 1.3 mu m wavelength.<>     

InGaAs探测器制备的ICP刻蚀方法研究

采用Cl2/BCl3/Ar感应耦合等离子体对InP/In0.55Ga0.45As/InP进行了刻蚀。讨论了不同的气体组分、ICP功率、直流自偏压下对刻蚀速率、表面粗糙度的影响。初步得到了一种稳定、刻蚀表面清洁光滑、图形轮廓良好、均匀性好和刻蚀速率较高的工艺。利用此工艺制作的8元InP/In0.55Ga0.45As/InP(PIN)探测器,峰值探测率为1.04×1012cmHz1/2W-1。     

Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's

We report the operation of a fully integrated p-i-n FET circuit based on a planar embedded In0.53Ga0.47As p-i-n detector and load resistor with InP depletion-mode FET's. The structure employs selective growth of InGaAs on a semi-insulating InP substrate and selective ion implantation of Si and Be into the InP and InGaAs, respectively. For a 10^-9bit error rate at 1.54 m, the circuit achieves a sensitivity of -34 dBm at 90 Mbit/s and -29.5 dBm at 295 Mbit/s.     

Clock and data recovery IC for 40-Gb/s fiber-optic receiver

The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gb/s. We report a 40-Gb/s CDR fabricated in indium-phosphide heterojunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in turn, reduces the circuit complexity (transistor count) and the voltage-controlled oscillator (VCO) requirements. The IC includes an on-chip LC VCO, on-chip clock dividers to drive an external demultiplexer, and low-frequency PLL control loop and on-chip limiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.     

可见光拓展InP/InGaAs宽光谱红外探测器

由于标准InP/In0.53Ga0.47As短波红外探测器的响应波段为0.87~1.7 m,在高性能夜视中具有重要的应用。为了进一步利用夜天光在可见光区间的辐射能量,需要将InP/In0.53Ga0.47As短波探测器的光谱响应拓展到可见光,从而实现包含可见光和短波波段的宽光谱探测。通过特殊的材料设计和背减薄工艺,成功研制了可见光拓展的320256 InP/InGaAs宽光谱红外探测器。采用增加滤光片的方法完成了器件在可见光、短波的成像演示,结果表明:目标在可见光、短波波段呈现出不同的特征信息,而不加滤光片的可见光拓展InP/InGaAs宽光谱红外探测器则探测到两个波段的信息,既包含目标的可见光信息同时也具有短波信息,从而实现了可见/短波双波段探测的效果,可显著提升对目标的探测能力。     

单片集成的低暗电流1.3 μm激光二极管和探测器芯片

为了在单片上实现半导体激光二极管与探测器的集成,开展了外延材料生长及结构工艺的设计研究。通过刻蚀工艺引入隔离区的方法制备了集成背光探测器的1.3m InGaAsP/InP半导体激光二极管芯片。管芯的光电性能测试显示,激光二极管具有较低的阈值电流17.62 mA,较高的斜率效率0.13 mW/mA,输出功率可达11 mW;在-0.7 V的反向偏压下,探测器区域对光信号具有良好的线性响应,MPD的光电流超过0.3 mA,在-1.7 V的反向偏压下,暗电流可低至25 nA。     

High efficiency high-speed photodetection in a monolithically integratable InGaAs/InP MQW laser structure at 1.5 mu m

Time-resolved photocurrent measurements in a reverse biased InGaAs/InP ridge waveguide multiquantum well pin laser structure at 1.54 mu m are reported. The pulse response of this monolithically integratable detector is approximately 150 ps FWHM with an internal quantum efficiency of approximately 100% at reverse bias voltages of approximately 5 V.<>     

采用激光并使用热释电探测器的甲烷浓度分析仪

介绍了一种以InP／InGaAsP半导体激光器作测量光源，以钽酸锂热释电探测器作光电转换器件、以8031单片机为核心为实现的双光束单色甲烷浓度分析仪。该分析仪由探测器系统、信号放大与处理系统及显示输出系统三部分组成．其中，探测器系统主要包括激光器、准直镜、扩束镜、分束镜、全反镜、红外窗口、气路、取样泵、窄带干涉滤光片及钽酸锂热释电探测器等；信号放大与处理系统主要包括前置放大电路、选频放大电路、采样保持电路、模-数转换电路、整形放大电路及8031单片机等；显示输出系统主要包括显示器、打印机及声报警器等。文中还描述了该分析仪的工作原理与基本结构，讨论了其中的技术难点及其相应的解决方法。     

High speed opto-electronic neural network

The first opto-electronic neural network, employing InGaAs/InP based, multi-quantum well, surface modulator/detector arrays and operating at speeds above 10 Mbit/s is reported. The network uses a novel architecture that has a computer generated holographic weight matrix outside the modulator and detector layers.<>     

InP基自由运行模式单光子APD

基于InGaAs/InP材料的雪崩二极管探测器工作响应波段范围0.9~1.67 μm,在盖革模式下探测效率较高,具有单光子量级的灵敏度,通过配置不同的偏置电路,可工作在门控和自由运行模式。目前主要采用门控模式的工作方式,门控模式可应用于光子到来时间已知的量子密钥分发。在激光测距、激光雷达成像等应用中当光子到达时间是未知的条件下,器件需工作在自由运行模式下。通过内部集成或片上集成自淬灭器件,探测器本身具有自淬灭或自恢复功能,无需外部淬灭电路,可工作在自由运行模式,大大拓展了InGaAs/InP单光子探测器的应用领域,同时对制备单光子探测器阵列具有优势。另外,采用InGaAs/GaAsSbⅡ类超晶格材料作为雪崩二极管的吸收层,可将探测器的截止波长进一步扩展为2.4 μm。首先对盖革模式APD进行了介绍,在此基础上对当前发展的自由运行模式以及扩展波长的InP基单光子探测器原理和性能进行了详细的阐述。     

Tunable InGaAsP Lasers for Spectral Measurements of High Bandwidth Fibers

An ultrashort-cavity thin-film laser of InGaAsP, pumped with a mode-locked and Q-switched Nd: YAG laser, has been used as the source and an InGaAs/InP p-i-n photodiode as the detector to demonstrate a system capable of measuring bandwidths of 8.5 GHz in single-mode optical fibers. The film laser emits pulses shorter than 10 ps and is tunable over 1700 A near the chromatic dispersion minimum in fibers.