Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975^∘C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900^∘C. The B₂O₃ added BaTi₄O₉ ceramics alone were not sintered below 975^∘C, but were sintered at 875^∘C when CuO was added. The formation of BaCu(B₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900^∘C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/^∘C     

Microwave dielectric properties of Ca[(Li1/3Nb2/3)1−x Tix]O3−δ ceramics with glass

The effect of the addition of glass on the densification, low temperature sintering, and microwave dielectric properties of the Ca[(Li_1/3Nb_2/3)_1−x Ti_x]O_3−δ(CLNT) was investigated. Addition of glass (B₂O₃-ZnO-SiO₂-PbO system) improved the densification and reduced the sintering temperature from 1150^∘C to 900^∘C of Ca[(Li_1/3Nb_2/3)_1−x -Ti_x]O_3−δ microwave dielectric ceramics. As increasing glass contents from 10 wt% to 15 wt%, the dielectric constants (ε_r) and bulk density were increased. The quality factor (Q⋅f₀), however, was decreased slightly. The temperature coefficients of the resonant frequency (τ_f) shifted positive value as increasing glass contents over Ti content is 0.2 mol. The dielectric properties of Ca[(Li_1/3Nb_2/3)_0.75Ti_0.25]O_3−δ with 10 wt% glass sintered at 900^∘C for 3 h were ε_r = 40 Q·f₀ = 11500 GHz, τ_f = 8, ppm/°C. The relationship between the microstructure and dielectric properties of ceramics was studied by X-ray diffraction (XRD), and scanning electron microscope (SEM).     

Low-temperature sintering and electrical properties of (1−x)Pb(Zr0.5Ti0.5)O3-xPb(Cu0.33Nb0.67)O3 ceramics

Electrical properties and sintering behaviors of (1 − x)Pb(Zr_0.5Ti_0.5)O₃-xPb(Cu_0.33Nb_0.67)O₃ ((1 − x)PZT-xPCN, 0.04 ≤ x ≤ 0.32) ceramics were investigated as a function of PCN content and sintering temperature. For the specimens sintered at 1050^∘C for 2 h, a single phase of perovskite structure was obtained up to x = 0.16, and the pyrochlore phase, Pb₂Nb₂O₇ was detected for further substitution. The dielectric constant (ε _r), electromechanical coupling factor (K_p) and the piezoelectric coefficient (d ₃₃) increased up to x = 0.08 and then decreased. These results were due to the coexistence of tetragonal and rhombohedral phases in the composition of x = 0.08. With an increasing of PCN content, Curie temperature (T_c) decreased and the dielectric loss (tanδ) increased. Typically, ε_r of 1636, K_p of 64% and d₃₃ of 473pC/N were obtained for the 0.92PZT-0.08PCN ceramics sintered at 950^∘C for 2 h.     

Control of Microwave Dielectric Properties in the System BaO ⋅ Nd<Subscript>2</Subscript>O<Subscript>3</Subscript> ⋅ 4TiO<Subscript>2</Subscript>—BaO ⋅ Al<Subscript>2</Subscript>O<Subscript>3</Subscript> ⋅ 4TiO<Subscript>2</Subscript>

BaO ⋅ Nd₂O₃ ⋅ 4TiO₂—based ceramics were prepared by the mixed oxide route. Specimens were sintered at temperatures in the range 1200–1450^∘C. Microstructures were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM); microwave dielectric properties were determined at 3 GHz by the Hakki and Coleman method. Product densities were at least 95% theoretical. The addition of up to 1 wt% Al₂O₃ to the starting mixtures reduced the sintering temperatures by at least 100^∘C. Incorporation of small levels of Al into the structure (initially Ti sites) led to an increase in Q × f values, from 6200 to 7000 GHz, a decrease in relative permittivity (ε_r) from 88 to 78, and moved the temperature coefficient of resonant frequency (τ_f) towards zero. The addition of 0.5 wt% Al₂O₃ with 8 wt% Bi₂O₃ improved densification, increased both ε_r (to 88) and Q× f (to 8000 GHz) and moved τ_f closer to zero. Ceramics in the system (1 − x)BaO ⋅ Nd₂O₃ ⋅ 4TiO₂ + xBaO ⋅ Al₂O₃ ⋅ 4TiO₂ exhibited very limited solid solubility. The end member BaO ⋅ Al₂O₃ ⋅ 4TiO₂ was tetragonal in structure with the following dielectric properties: ε_r = 35; Q× f = 5000 GHz; τ_f = −15ppm/^∘C. Microstructures of the mixed Nd-Al compositions contained two distinct phases, Nd-rich needle-like grains and large Al-rich, lath-shaped grains. Products with near zero τ_f were achieved at compositions of approximately 0.14BaO ⋅ Nd₂O₃ ⋅ 4TiO₂ + 0.86BaO ⋅ Al₂O₃ ⋅ 4TiO₂, where Q× f = 8200 GHz and ε_r = 71.     

Sintering and compositional effects on the microwave dielectric characteristics of Mg(Ta1−x Nb x )2O6 ceramics with 0.25 ≦ x ≦ 0.35

1,500 °C−sintered MgTa₂O₆ ceramic exhibits microwave dielectric characteristics of ɛ _r = 30.5, Q × f = 56,900 GHz, and τ _f = 28.3 ppm/°C, whereas 1,400 °C-sintered MgNb₂O₆ ceramic exhibits microwave dielectric characteristics of ɛ _r = 21.7, Q × f = 89,900 GHz, and τ _f = −68.5 ppm/°C. In order to find the dielectric resonators with τ _f value close to 0 ppm/°C, the effects of sintering condition and composition on the microwave dielectric characteristics of Mg(Ta_1−x Nb _x )₂O₆ ceramics (0.25 ≦ x ≦ 0.35) prepared under sintering temperature of 1,300–1,450 °C are investigated. The results show that as the sintering temperature increases from 1,300 to 1,450 °C, the ɛ _r, Q × f and τ _f values of Mg(Ta_1−x Nb _x )₂O₆ ceramics all increase and saturate at 1,450 °C. On the other hand, as the Nb₂O₅ content decreases, the τ _f values of Mg(Ta_1−x Nb _x )₂O₆ ceramics will shift to near 0 ppm/°C. The optimized sintering conditions and composition to obtain the Mg(Ta_1−x Nb _x )₂O₆ dielectrics with τ _f close to 0 ppm/°C are sintering temperature of 1,450 °C, sintering duration of 4 h, and composition of x = 0.25, which exhibits the microwave dielectric characteristics of ɛ _r = 27.9, Q × f = 33,100 GHz, and τ _f = −0.7 ppm/°C.     

Low Temperature Sintering of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-Based Middle-<Emphasis Type="Italic">k</Emphasis> Dielectric Composition for LTCC Applications

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi₄O₉-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t_cf = 10 ppm/C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi₄O₉ to BaTi₅O₁₁ and Ba₄Ti₁₃O₃₀ was observed, which result in the modification of microwave dielectric properties.     

Control of 0.2CaTiO3-0.8Li0.5Nd0.5TiO3 microwave dielectric ceramics by additions of Bi2Ti2O7

Ceramics of 0.2CaTiO₃-0.8Li_0.5Nd_0.5TiO₃) have been prepared by the mixed oxide route using additions of Bi₂O₃-2TiO₂ (up to 15 wt%). Powders were calcined 1100^∘C; cylindrical specimens were fired at temperatures in the range 1250–1325^∘C. Sintered products were typically 95% dense. The microstructures were dominated by angular grains 1–2 μm in size. With increasing levels of Bi₂O₃-2TiO₂ additions, needle and lath shaped second phases developed. For Bi₂Ti₂O₇ additions up to 5 wt%, the relative permittivity increased from 95 to 131, the product of dielectric Q value and measurement frequency increased from 2150 to 2450 GHz and the temperature coefficient of resonant frequency (τ _f ) increased from −28pp/^∘C to +22pp/^∘C. A product with temperature stable τ _f could be obtained at ∼2 wt% Bi₂Ti₂O₇ additions. For high levels of additives, there is minimal change in relative permittivity, the Qxf values degrade and τ _f becomes increasingly negative.     

Thermal and dielectric properties of ZnO-B2O3-MO3glasses (M = W, Mo)

Glasses in the ZnO-B₂O₃-MO₃(M = W, Mo) ternary were examined as potential replacements to PbO-B₂O₃-SiO₂-ZnO glass frits with the low firing temperature (500–600^∘C) for the dielectric layer of a plasma display panels (PDPs). Glasses were melted in air at 950–1150^∘C in a narrow region of the ternary using standard reagent grade materials. The glasses were evaluated for glass transition temperature (T _g ), softening temperature (T _d ), the coefficient of thermal expansion (CTE), dielectric constant (ε _r ), and optical property. The glass transition temperature of the glasses varied between 470 and 560^∘C. The coefficient of thermal expansion and the dielectric constant of the glasses were in the range of 5–8 × 10^{− 6}/^∘C and 8–10, respectively. The addition of MO₃to ZnO-B₂O₃binary could induce the expansion of glass forming region, the reduction of T _g and the increase in the CTE and the dielectric constant of the glasses. Also, the effect of the addition of MO₃to ZnO-B₂O₃binary on the transmittance in the visible-light region (350–700 nm) was investigated.     

Phase transformation and microwave dielectric properties of BiPO4 ceramics

Monazite-type compounds, BiPO₄ polymorphs were prepared by the solid-state reaction method. The phase transformation and microwave dielectric properties of sintered ceramics were investigated using the X-ray powder diffraction (XRD) and a network analyzer, respectively. The low-temperature phase of BiPO₄ has monoclinic structure, and was transformed into the high-temperature phase with a slight distortion of monoclinic when it is heated above 600^∘C. The effect of the transformation on the microwave dielectric properties was examined. It was found that the dielectric properties of each phase were significantly different. In particular, the high-temperature phase sintered at 950^∘C has good microwave dielectric properties; the relative dielectric constant (ε _r ) = 22, the quality factor (Q× f) = 32,500 GHz and the temperature coefficient of resonant frequency (τ _f ) = − 79 ppm/ ^∘C.     

Piezoelectric and dielectric characteristics of low temperature sintering Pb(Ni1/3Nb2/3)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 ceramics for multilayer piezoelectric actuator

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PNN substituted PMN-PZT ceramics were fabricated using Li₂CO₃ and Na₂CO₃ as sintering aids, and their piezoelectric and dielectric characteristics were investigated. With the increase of the amount of PNN substitution, dielectric constant (εr), electromechanical coupling factor (k _p), and piezoelectric constant (d ₃₃) of specimens showed the maximum value at each sintering temperature, and crystal structure changed from tetragonal to rhombohedral. At the sintering temperature of 950^∘C, the density, εr, k _p, d ₃₃, Q_m and Tc of 12 mol% PNN substituted PMN-PNN-PZT composition ceramics showed the optimal values of 7.79 g/cm³, 1160, 0.599, 419pC/N, 894 and 332^∘C, respectively, for low loss multilayer piezoelectric actuator application.     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%     

Effect of SnO2 on improvement on the microwave dielectric properties of Ba2Ti9O20

Effect of SnO₂ addition on the crystal structure/microstructure and the related microwave dielectric properties of the Ba₂Ti₉O₂₀ were systematically investigated. Incorporation of SnO₂ markedly stabilized the phase constituent and microstructure for the Ba₂Ti₉O₂₀ such that high quality materials can be obtained in a much wider processing window. The sintered density of the Ba₂Ti₉O₂₀ increased linearly, but the microwave dielectric constant (K) decreased monotonically, with the SnO₂ doping concentration. The quality factor (Qxf) of the materials increased firstly due to the addition of SnO₂, but decreased slightly with further increase in SnO₂ content. The best microwave dielectric properties obtained are K = 38.5 and Qxf = 31,500 GHz, which occurs for the 0.055 mol SnO₂-doped and 1350 °C/4 h sintered samples. These properties are markedly better than those for undoped materials (K = 38.8 and Qxf = 26,500 GHz).     

Synthesis and properties of ferroelectric Si-doped (Bi, Nd)4Ti3O12 thin films by chemical solution deposition

Ferroelectric Si-doped (Bi,Nd)₄Ti₃O₁₂ thin films have been prepared on Pt/TiO_x/SiO₂/Si substrates through metal-organic compounds by the chemical solution deposition. The Bi_3.25Nd_0.75Ti_2.9Si_0.1O₁₂ (BNTS) precursor films were found to crystallize into the Bi-layered perovskite Bi₄Ti₃O₁₂ single-phase above 600^∘C. The synthesized BNTS films revealed a random orientation having a strong 117 reflection. The BNTS thin films prepared between 600^∘C and 700^∘C showed well-saturated P-E hysteresis loops with P _r of 13–14 μ C/cm² and E _c of 100–110 kV/cm at an applied voltage of 5 V. The surface roughness of the BNTS thin films was improved by Si doping compared with that of undoped Bi_3.35Nd_0.75Ti₃O₁₂ films.     

Sintering behavior, structures and microwave dielectric properties of a rutile solid solution system: (AxNb2x)Ti1–3xO2 (A=Cu, Ni)

The sintering behavior, structures and microwave dielectric properties in a rutile solid solution system—(A_xNb_2x)Ti_1–3xO₂ (A=Cu, Ni)—were investigated and the samples were prepared by conventional solid state reaction method. Single phase of tetragonal rutile structure has been obtained through the entire range of compositions (0.02 ≤ x ≤ 0.20). The sintering temperature was lowered to 900°C by (Cu _{x /3}Nb_2x/3)⁴⁺ substituting for Ti⁴⁺ in the solid solution. Comparing with that of rutile TiO₂ (465 ppm/°C), the temperature coefficient of resonant frequency (TCF) of the rutile solid solution is much lower (about 250 ppm/°C), and the dielectric constant and the quality factor (Qf value) of the solid solution are about 70~80 and 7,000G Hz. The substitution of (Cu _{x /3}Nb_2x/3)⁴⁺or (Ni _{x /3}Nb_2x/3)⁴⁺ for Ti⁴⁺ in the solid solution improved the microwave dielectric properties of the rutile TiO₂ ceramics.     

Co-Modification of Ba5NdTi3Ta7O30 Dielectric Ceramics by Substitution and Introducing Secondary Phase

Co-modification of Ba₅NdTi₃Ta₇O₃₀ dielectrics ceramics was investigated through Pb substitution for Ba and introducing Bi₄Ti₃O₁₂ secondary phase. The dielectric constant increased from 150 to 283, the temperature coefficient of the dielectric constant decreased from –2500 ppm/°C to –1279 ppm/°C, and the dielectric loss decreased to 0.0007 at 1 MHz. Meanwhile, the bi-phase ceramics were investigated to achieve temperature stable ceramics with high dielectric constant and low dielectric loss. As the composition x varied from 0.4 to 0.7 for (1 – x)(Ba_0.8Pb_0.2)₅NdTi₃Ta₇O₃₀/xBi₄Ti₃O₁₂, the temperature coefficient of the dielectric constant changed from negative to zero to positive.     

Dielectric properties of ZnNb2 O 6 -TiO 2 mixture thin films

ZnNb₂O₆-TiO₂ mixture thin films with multilayer structures were fabricated via a sol-gel spin coating process. TiO₂ layers were deposited on the pre-crystallized ZnNb₂O₆ layers in order to suppress the formation of the ixiolite phase which always forms in the bulk system. The phase constitution of the thin films, confirmed by X-ray diffraction (XRD), could be controlled by the annealing temperatures, which, in turn, influenced the dielectric properties of the thin films. TiO₂ layers crystallized as the anatase phase and then transformed to the rutile phase at temperatures higher than 725^∘C. Dielectric constants of the mixture thin films, measured at 1 MHz with an MIM (metal-insulator-metal) structure, increased from 27 to 41 with dielectric losses below 0.005 as the annealing temperature increased from 700^∘C to 900^∘C. The increase in the dielectric constants was understood to originate from the increasing amounts of the rutile phase. Temperature coefficients of capacitance (TCC) were also measured between 25^∘C and 125^∘C, which showed a decreasing manner from positive values to negative values with increasing annealing temperatures. When annealed at 850^∘C, the TCC of the thin films could be tuned to be approximately 0 ppm/^oC with dielectric constant and dielectric loss of 36 and 0.002, respectively.     

Characteristics of Bi4Ti3O12 thin films on ITO/glass and Pt/Si substrates prepared by R.F. sputtering and rapid thermal annealing

Bi₄Ti₃O₁₂ thin films are deposited on ITO/glass and Pt/Ti/Si(100) substrates by R.F. magnetron sputtering at room temperature. The films are then heated by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere at temperatures ranging from 550–700^∘C. X-ray diffraction examination reveals that the crystalinity of the films grown on Pt/Ti/Si is better than that of the films grown on ITO/glass under the same fabrication conditions. SEM observation shows that the films grown on Pt/Ti/Si are denser than those grown on ITO/glass substrates. Interactive diffusion between the Bi₄Ti₃O₁₂ film and the ITO film increases with the increase of annealing temperature. The optical transmittance of the thin film annealed at 650^∘C is found to be almost 100% when the effect of the ITO film is excluded. The relative dielectric constants, leakage currents and polarization characteristics of the two films are compared and discussed.     

Forsterite ceramics for millimeterwave dielectrics

The wireless communications have been tremendously developed in the recent ubiquitous age. The utilizable frequency region has been expanded to millimeterwaves because of shortage of conventional frequency regions. For the ultra high frequencies of millimeterwaves, dielectrics with ultra high quality factor Q and low dielectric constant ε _r are desired. Low ε _r is necessary to short the delay time of signals and to make devices small in size. Silicates for candidate of millimeterwave materials have low dielectric constant, because of silica-oxygen tetrahedra composed of half covalent bonds. Forsterite (Mg₂SiO₄) as such kind of silicates has high Q ⋅ f of 270000 GHz and low ε _r of 6.8. The temperature coefficient of resonant frequency τ _f was improved by adding rutile TiO₂ with high τ _f of plus 450 ppm/^∘C. In this paper, these results for forsterite are summarized.     

Application of spark plasma sintering for growing dense Pb(Mg1/3Nb2/3)O3–35 mol% PbTiO3 single crystal by solid-state crystal growth

This study examined the effect of spark plasma sintering (SPS) on the densification behavior and resulting dielectric and piezoelectric properties of Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ ceramics with a 5 mol% excess of PbO. Through normal sintering at 1200^∘C, the density of the specimen reached only 92% of the theoretical density (TD). However, with the SPS treatment, the density of the PMN-PT ceramics increased to more than 99% of the TD at 900^∘C, and maintained over 98% of the TD during subsequent heat-treatment at 1200^∘C for 10 h. The increased density of the Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ ceramics resulted in an improvement in the dielectric and piezoelectric properties. The SPS treatment was also successfully applied to the densification of a PMN-PT single crystal grown on a BaTiO₃ seed crystal using a solid-state crystal growth (SSCG) process.     

Liquid phase low temperature sintering of niobate and cerate fine powders

The efficiency of simultaneous application of chemically-derived starting powders and melt-forming sintering aids in low temperature sintering has been demonstrated. Doping of cryochemically processed BiNbO₄ powders with CuO/V₂O₅ causes reducing sintering temperatures from 850–900^∘C to 700–720^∘C. Similar doping of Zn₃Nb₂O₈ fine powders allows to obtain ceramics with density 97–98% and Q × F values up to 40 000 GHz at T > 720^∘C. The sintering of solution-derived BaCeO₃ powders doped with CuO results in dense ceramics at T = 1000^∘C. Morphological evolution during sintering was observed using hot stage SEM. Low temperature liquid phase sintering of fine powders is rather sensitive to the traces of secondary phases and to the micromorphology of starting powders though observed reduction of sintering temperatures is substantially larger than for traditional liquid phase sintering of coarse-grained oxide powders.