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采用第二相粒子AlN的添加方法,其中SiCAlN质量比为8515(外加0.5ω/%的Y2O3)的组分混合均匀后干燥过筛,并且置于石墨模具中热压制备SiC/AlN复合材料.热压烧结条件为Ar气氛中1950℃,40MPa,保温30min.运用XRD确定SiC与AlN接触面与非接触面的相组成,确认烧结过程为氮化铝发生单向的蒸发行为和固相烧结行为.高温烧结时,SiC/AlN复合材料的烧结过程可视为一种单向的传质即AlN蒸发并且沉积在SiC颗粒表面.然后在扩散传质过程中,AlN向SiC颗粒内部扩散并且在碳化硅晶粒表面形成SiC-AlN固溶体层,阻碍碳化硅晶粒的过分长大,最终使碳化硅-氮化铝二元相成为一种具有结构均匀、晶粒细小的复合材料. 相似文献
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以W28的工业磨料用碳化硅粉和W10的高纯石墨粉为原料,采用氧化结合法制备出孔隙含量分别为38%、48%和61%的SiC预成形坯.研究了SiC多孔陶瓷的低温氧化烧结机理和石墨添加量对SiC陶瓷骨架烧结密度和尺寸变化的影响.研究结果表明:在1100℃烧结时,碳化硅和石墨粉同时发生氧化反应,碳化硅粉体通过自身氧化产生SiO2而焊接在一起,形成陶瓷骨架;石墨氧化去除后形成孔隙;SiC粉体间的本征孔隙和石墨去除后留下的孔隙构成三维互连通状态;因SiC氧化导致陶瓷骨架产生3%左右的线膨胀,膨胀量随石墨含量的增加而增大. 相似文献
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以电熔刚玉和单质硅为原料压制成试样,分别在埋碳条件、1400~1600℃高温烧结,获得5个不同温度点合成样品,采用XRD分析技术研究试样的物相演变过程,对Al2O3-Si系原料在埋碳气氛合成过程中的物相变化和反应动力学机制进行了研究.结果表明试样中新生成的物相除了SiC和O'-Sialon外,合成温度在1550℃以下还存在SiO2相,1550℃以上则存在X-Sialon相.其反应过程是金属硅和氮气反应生成Si3N4,金属Si和CO反应生成SiO2和SiC;SiC和Si3N4又分别转化成Si2N2O;同时,Al2O3和Si2N2O固溶合成O'-Sialon.随着合成温度的升高,Al2O3和Si2N2O会进一步固溶生成X-Sialon.CO气体参与反应、合成温度和原料配比是控制Al2O3-Si系原料最终合成产物、产物的生成速度和生成量的重要因素. 相似文献
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以Mo、Si和SiC粉末为原料,利用放电等离子烧结技术在不同温度下制备SiC/MoSi_2复合材料,研究SiC/MoSi_2复合材料的物相组成、显微组织和力学性能,并探讨其烧结行为。结果表明:SiC/MoSi_2复合材料由MoSi_2、SiC和少量的Mo_(4.8)Si_3C_(0.6)组成,呈现细晶组织。在Si C/MoSi_2复合材料的烧结过程中,存在固相烧结至液相烧结的演变。1600°C烧结的Si C/MoSi_2复合材料表现出最好的力学性能,其维氏硬度、抗弯强度、断裂韧性分别为13.4 GPa、674 MPa和5.1 MPa·m~(1/2),比纯MoSi_2分别提高了44%、171%和82%。第二相SiC作为硬质相可以承受外加应力,并阻碍裂纹的快速扩展,有助于复合材料力学性能的提高。 相似文献
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CaF2助剂放电等离子烧结透明AlN陶瓷的微观结构和光学性能 总被引:1,自引:1,他引:1
采用放电等离子烧结技术,添加质量分数为3%的CaF2作为烧结助剂,制备了透明氮化铝(AlN)陶瓷.样品在烧结温度1 800℃,30 MPa压力下保温15 min,达到了99.5%的相对密度和52.7%的最大透过率.SEM、XRD、TEM和EDX结果表明,烧结体具有很高的致密度、纯度,良好的晶粒形貌和微观晶体结构,晶界和三角晶界处观察不到第二相的存在.CaF2的添加引入液相烧结,促进AlN晶粒的生长和烧结体的致密化,并且与AlN颗粒反应生成的氟化物和Ca-Al-O化合物能够从烧结体中逸出,进一步净化烧结体,是制备透明AlN陶瓷的有效助剂.放电等离子烧结技术具有烧结快速、烧结体致密度高的特点,是制备透明AlN陶瓷的有效方法. 相似文献
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《材料热处理学报》2015,(7)
采用Al2O3-Y2O3-CaO烧结助剂体系,低于1600℃无保护气氛条件下常压烧结制备SiC陶瓷。研究了粘结剂含量、压制压力、SiC原料粒径级配、烧结温度、烧结助剂含量等对SiC陶瓷结构与性能的影响,优化低温常压烧结SiC陶瓷工艺参数。结果表明,在SiC陶瓷烧结过程中,烧结体中的助烧熔体能充分填充孔隙,并在随后的冷却过程中大多转化为晶态氧化物,有效促进SiC陶瓷的烧结致密化,并赋予其良好的结构与性能。采用3.5μm和0.5μm粒径的粉体按3∶1质量比级配,烧结助剂含量为30%(质量分数),1575℃烧结制备的SiC陶瓷的密度为2.93 g/cm3,抗弯强度为359 MPa。 相似文献
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以一种典型的MAX相材料Ti3AlC2为原料,采用粉末冶金无压烧结的方式,压坯压力选用500 MPa,烧结时间为1 h,分别选用800、900、1 000、1 100、1 200℃5个烧结温度制备了MAX/Cu复合材料。通过对样品的金相、电导率与显微硬度等测试,探讨了不同烧结温度下MAX/Cu复合材料的组织及其性能变化。结果表明,无压烧结最佳烧结温度为1 100℃,可以得到综合性能最佳的复合材料,硬度、致密度和导电率分别达到330 HV、99.5%以上和4.6 m S/m。 相似文献
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《金属热处理》2017,(1)
以粒径为15μm的ZrB_2粉末作为原料,在烧结温度1800℃、压力30 MPa条件下,采用放电等离子烧结(SPS)制备出单相ZrB_2陶瓷,并研究了不同加热速率和不同保温时间对ZrB_2陶瓷烧结体烧结行为、物相、微观结构、致密度及开、闭孔率的影响。采用XRD、FESEM分别分析了样品的相组成和微观形貌,采用阿基米德排水法测量了样品的致密度、开孔率和闭孔率。结果表明,加热速率和保温时间对ZrB_2陶瓷烧结体的物相、微观结构及致密度等影响显著,并得出加热速率150℃/min和保温时间5 min为最佳烧结工艺,所制备出的ZrB_2陶瓷烧结体纯度高、致密度为95.1%、开孔率为1.2%、闭孔率为3.7%。 相似文献
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以金属铬粉和陶瓷结合剂粉体为初始原料,按照不同比例配混,采用机械合金化(MA)工艺对其进行处理。工艺参数为:球料比R=20∶1,转速n=350 r/min,球磨时间t=12 h;添加适量的无水乙醇为过程控制剂。将获得的复合粉体在660~740 ℃进行无压烧结,用SiC埋烧。采用三点弯曲法测试烧结后试样的抗弯强度,利用X射线衍射仪(XRD)测试试样的物相构成,用扫描电子显微镜(SEM)观察试样断口的微观形貌,采用阿基米德原理测试试样的密度和显气孔率。实验结果表明:利用MA处理工艺,可以获得金属相与陶瓷相均匀分布的复合结合剂;当金属铬粉的质量分数为30%,烧结工艺为700 ℃/30 min时,所得试样的抗弯强度达到最大值,为187 MPa。金属铬粉通过其颗粒表层的CrO与陶瓷形成良好的界面结合,从而提高复合结合剂的抗弯强度。 相似文献
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In this research, acrylate gel maker monomers Mathacrylamide (MAM) and Methylenebisacrylamide (MBAM) were used through a gel casting process to fabricate SiC bodies. Investigation of rheological behavior of suspensions showed that optimum amount of surfactant (Tetramethylammonium hydroxide) was equaled with 0.7 wt% of ceramic powders and ceramic powders could be added up to 37 vol% of solvent without any problems in casting. The effects of monomers content, monomers ratio and also solid loading on gelation time, bending strength of samples were investigated. Results showed that increasing the monomers content (MAM + MBAM) and ceramic solid loading led to the reduction of gelation time. Also alteration of these parameters resulted in variation of samples bending strength from ~6 MPa to 19 MPa, the best strength was obtained in the sample containing 35 wt% monomers with the MAM/MBAM ratio of 3 and 35 vol% SiC. Finally the samples containing different amounts of SiC were casted according to the pre-determined optimum parameters and after being dried they were sintered at 2150 °C for 1 h. According to the results, the highest density, Young's modulus, hardness and indentation fracture resistance were obtained in sample containing 37 vol% SiC and were equaled with 96.89%, 499.24 GPa, 27.51 GPa and 6.3 MPa·m1/2, Respectively. Microstructural studies showed that cleavage fracture planes, crack deflection and branching were the most important mechanisms on toughness enhancement. 相似文献
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1.~onSiCamongStbasecerdricsPOssessessuperiormechanicalpropertiesathightemperatures.InordertoexpandtheengineeringaPPlicationsoftheceramics,thebondingofSiCtometalisreqUiredbecausethemetalscompensatetheworseworkabilityandbrittlenessoftheSiC.TheknowledgeofinterfacestructuresandreactionphasesattheinterfacebetweenSiCandmetalisnecessarytOobtainthehighreliableSiC/metaljoint.SeveralstudiesconcerningbondingmechanismsbetweenSiCandmetalsofTi,Cr,NbandTa[l--53.AlthoughheatjresistantNiandNi--Crallo… 相似文献
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Synthesis of high-purity Ti2AlN ceramic by hot pressing 总被引:2,自引:0,他引:2
High-purity Ti2AIN ceramic was prepared at 1300℃ by hot pressing(HP) of Ti/Ai/TiN powders in stoichiometric proportion. The sintered product was characterized using X-ray diffraction(XRD) and MDI Jade 5.0 software (Materials Data Inc, Liverpool, CA). Scanning electron microscopy(SEM) and electron probe micro-analysis(EPMA) coupled with energy-dispersive spectroscopy(EDS) were utilized to investigate the morphology characteristics. The results show that Ti2AIN phase is well-developed with a close and lamellar structure. The grains are plate-like with the size of 3-5 μm, thickness of 8-10 μm and elongated dimension. The density of Ti2AlN is measured to be 4.22 g/cm^3, which reaches 97.9% of its theory value. The distribution of Ti2AlN grains is homogeneous. 相似文献
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The effects of two different heat-treatment atmospheres,nitrogen atmosphere and reducing nitrogen atmosphere with carbon,on the properties of Y2O3-doped aluminum nitride (AlN) ceramics were investigated.The AlN powder as a raw material was synthesized by self-propagating high-temperature synthesis (SHS) and compacts were fabricated by employing powder injection molding technique.The polymer-wax binder consisted of 60 wt.% paraffin wax (PW),35 wt.% polypropylene (PP),and 5 wt.% stearic acid (SA).After the removal of binder,specimens were sintered at 1850℃ in nitrogen atmosphere under atmospheric pressure.To improve the thermal conductivity,sintered samples were reheated.The result reveals that the heat-treatment atmosphere has significant effect on the properties and secondary phase of AlN ceramics.The thermal conductivity and density of AlN ceramics reheated in nitrogen gas are 180 W·m-1 K-1 and 3.28 g,cm-3 and the secondary phase is yttrium aluminate.For the sample reheated in reducing nitrogen atmosphere with carbon,the thermal conductivity and density are 173 W.m-1.K-1 and 3.23 g·cm-3,respectively,and the secondary phase is YN. 相似文献
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采用喷射法在石墨基体表面形成BN薄层,利用Al与BN原位渗透反应并渗入石墨基体,在基体获得AlN涂层来增强石墨的抗腐蚀能力。采用DTA、XRD分析方法,对原位反应过程进行分析,并探索了热处理工艺条件对反应物相结构的影响,确定了的最佳热处理工艺条件。采用SEM分析方法,对喷射工艺参数以及AlN涂层/石墨微观结构进行分析;采用EPMA对合成AlN涂层/石墨进行元素分布分析。结果表明:采用原位合成工艺可获得致密结构的AlN涂层,同时在石墨基体与涂层之间形成致密的结合界面。 相似文献
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利用悬浮床,以Si粉为原料,在0.2 L/min的高纯氮气中,维持反应温度1~600 ℃,悬浮反应30 min,在预先放置的收集器上得到了SiC纳米线,XRD结果表明所得SiC纳米线为部分结晶状态,结晶态晶型为六方6H型.SEM形貌观察结果表明,所得SiC为纳米线.进一步SEM观察发现,大量纳米线的端部有球状液滴存在,VLS机制为该纳米线的主要形成机制, 通过EDX能谱对比分析,纳米线端部球状液滴中相对纳米线本身含有较多的氧元素,因此,氧元素对于通过VLS机制形成SiC纳米线起到了促进作用.TEM观察显示,纳米线中存在大量的堆垛层错缺陷. 相似文献
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G. Celebi Efe T. Yener I. AltinsoyM. Ipek S. ZeytinC. Bindal 《Journal of Alloys and Compounds》2011,509(20):6036-6042
Copper matrix composites reinforced with 1 wt.%, 2 wt.%, 3 wt.% and 5 wt.% SiC particles were fabricated by powder metallurgy method. Cu and Cu-SiC powder mixtures were compacted with a compressive force of 280 MPa and sintered in an open atmospheric furnace at 900-950 °C for 2 h. Within the furnace compacted samples were embedding into the graphite powder. The presence of Cu and SiC components in composites was verified by XRD analysis. Optical and SEM studies showed that Cu-SiC composites have a uniform microstructure in which silicon carbide particles are distributed uniformly in the copper matrix. The results of the study on mechanical and electrical conductivity properties of Cu-SiC composites indicated that with increasing SiC content (wt.%), hardness increased, but relative density and electrical conductivity decreased. The highest electrical conductivity of 98.8% IACS and relative density of 98.2% were obtained for the Cu-1 wt.%SiC composite sintered at 900 °C and this temperature was defined as the optimum sintering temperature. 相似文献
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Continuous SiC(OA1) fibers, named KD-A fibers, were prepared by the melt-spinning of ceramic precursor polyaluminocarbosilane, air-curing, and pyrolizing at 1 300℃. These fibers contained small amount of aluminum and 7%-9% oxygen. The KD-A fibers were converted into sintered SiC(A1) fibers, named KD-SA, by sintering at 1 800℃. The fibers were characterized by chemical analysis, tensile strength test, SEM and XRD. The tensile strength, elastic modulus and diameter of the KD-A fibers are 2.6 GPa, 210 GPa, 12- 14μm, respectively. The KD-A fibers have higher thermal stability, more excellent oxidation resistance than the Nicalon fibers. The properties of the KD-A fibers have reached the level of Hi-Nicalon fibers. The tensile strength, elastic modulus and diameter of the KD-A fibers are 2.1 GPa, 405 GPa, 10 - 12μm, respectively. The KD-SA fibers with nearly stoichiometric component have stable performance at high temperature, and better creep resistance than the Tyranno SA fibers. 相似文献
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采用包裹法和机械合金法制备了SiC:Cu为20:80(体积比)的SiC/Cu复合材料。采用XRD,SEM及EDAX能谱对粉体和烧成样品的物相、断口显微形貌及断口物质成分进行了表征。结果表明:采用包裹法在制备复合粉体过程中出现Cu2O,其含量在烧结过程中减少,包裹法制备的烧成样品SiC颗粒和Cu结合成“核.壳”结构,两相分布比机械合金法更均匀,界面结合更好,强度更高。 相似文献