SiC Depletion in ZrB2–30 vol% SiC at Ultrahigh Temperatures

The formation of a porous SiC‐depleted region in ZrB₂–SiC due to active oxidation at ultrahigh temperatures was characterized. The presence/absence of SiC depletion was determined at a series of temperatures (1300°C–1800°C) and times (5 min–100 h). At T < 1627°C, SiC depletion was not observed. Instead, the formation of a ZrO₂ + C/borosilicate oxidation product layer sequence was observed above the ZrB₂–SiC base material. At T ≥ 1627°C, SiC was depleted in the ZrB₂ matrix below the ZrO₂ and borosilicate oxidation products. The SiC depletion was attributed to active oxidation of SiC to form SiO(g). The transition between C formation in ZrO₂ (T < 1627°C) and SiC depletion in ZrB₂ (T ≥ 1627°C) is attributed to variation in the temperature dependence of thermodynamically favored product assemblage influenced by the local microstructural phase distribution. The growth kinetics of the SiC depletion region is consistent with a gas‐phase diffusion‐controlled process.     

Initial Stages of ZrB2–30 vol% SiC Oxidation at 1500°C

The initial oxidation behavior of ZrB₂–30 vol% SiC was analyzed with the goal of understanding any relationship to the variable oxidation performance observed at longer times. A box furnace was used to oxidize samples for times as short as 10 s and up to 100 min at 1500°C in air. The samples were characterized using mass change, scanning electron microscopy, energy dispersive spectroscopy, X‐ray diffraction, and X‐ray photoelectron spectroscopy to explore the oxidation behavior. The presence of borosilicate glass and ZrO₂ was observed on the surface at times as early as 10 s. Bubble formation in the borosilicate glass was observed after 30 s of oxidation and is attributed to uneven distribution of the glass. The impact of surface roughness on oxidation was also explored and found to be negligible for times greater than 30 s.     

Determination of Retained B2O3 Content in ZrB2‐30 vol% SiC Oxide Scales

The composition of the borosilicate glass layer formed during oxidation of ZrB₂‐30 vol% SiC was determined to elucidate the extent of B₂O₃ retention in the oxide during high‐temperature oxidation. Oxidation was conducted in stagnant air at 1300°C, 1400°C, and 1500°C for times between 100 and 221 min. Specimens were characterized using mass change and scanning electron microscopy. After oxidation, the borosilicate glass layer was dissolved from the specimens sequentially with deionized H₂O and HF acid, to analyze the glass composition using inductively coupled plasma optical emission spectrometry. It was found that the average B₂O₃ content in the glass scale ranged from 23 to 47 mol%. Retained B₂O₃ content in the bulk of the glass decreased with increasing temperature, confirming increased volatility with temperature. Boron depth profiles were also obtained in the near surface region using X‐ray photoelectron spectroscopy and energy dispersive spectroscopy. The measured B concentrations were used to estimate the B₂O₃ concentration profile and B diffusion coefficients in the borosilicate glass. Implications for the ZrB₂‐SiC oxidation process are discussed.     

Elevated Temperature Strength Enhancement of ZrB2–30 vol% SiC Ceramics by Postsintering Thermal Annealing

The mechanical properties of dense, hot‐pressed ZrB₂–30 vol% SiC ceramics were characterized from room temperature up to 1600°C in air. Specimens were tested as hot‐pressed or after hot‐pressing followed by heat treatment at 1400°C, 1500°C, 1600°C, or 1800°C for 10 h. Annealing at 1400°C resulted in the largest increases in flexure strengths at the highest test temperatures, with strengths of 470 MPa at 1400°C, 385 MPa at 1500°C, and 425 MPa at 1600°C, corresponding to increases of 7%, 8%, and 12% compared to as hot‐pressed ZrB₂–SiC tested at the same temperatures. Thermal treatment at 1500°C resulted in the largest increase in elastic modulus, with values of 270 GPa at 1400°C, 240 GPa at 1500°C, and 120 GPa at 1600°C, which were increases of 6%, 12%, and 18% compared to as hot‐pressed ZrB₂–SiC. Neither ZrB₂ grain size nor SiC cluster size changed for these heat‐treatment temperatures. Microstructural analysis suggested additional phases may have formed during heat treatment and/or dislocation density may have changed. This study demonstrated that thermal annealing may be a useful method for improving the elevated temperature mechanical properties of ZrB₂‐based ceramics.     

Oxidation Behavior of Hot Pressed ZrB2‐ZrC‐SiC Ceramic Composites

Dense ZrB₂‐SiC ceramics containing 40 vol% ZrC particles are fabricated via hot pressing method. Then the sintered ceramics are oxidized in air up to 1500°C, and the oxidation kinetics of the ceramic composites is deduced in combination with the reacted fraction curves. As indicated by the experimental results, the oxidation kinetics changes from reaction‐controlled process to diffusion‐controlled one with increasing of oxidation temperature. In addition, the oxidation kinetics parameters are obtained, which indicates that the oxidation resistance decays at elevated temperatures. Furthermore, the evolution of surface morphology and oxide scale during oxidation process is clarified.     

Sintering Mechanisms and Kinetics for Reaction Hot‐Pressed ZrB2

Sintering mechanisms and kinetics were investigated for ZrB₂ ceramics produced using reaction hot pressing. Specimens were sintered at temperatures ranging from 1800°C to 2100°C for times up to 120 min. ZrB₂ was the primary phase, although trace amounts of ZrO₂ and C were also detected. Below 2000°C, the densification mechanism was grain‐boundary diffusion with an activation energy of 241 ± 41 kJ/mol. At higher temperatures, the densification mechanism was lattice diffusion with an activation energy of 695 ± 62 kJ/mol. Grain growth exponents were determined to be ~4.5, which indicated that a grain pinning mechanism was active in both temperature regimes. The diffusion coefficients for grain growth were 1.5 × 10^?16 cm⁴/s at 1900°C and 2.1 × 10^?15 cm⁴/s at 2100°C. This study revealed that dense ZrB₂ ceramics can be produced by reactive hot pressing in shorter times and at lower temperatures than conventional hot pressing of commercial powders.     

Oxidation Behavior of ZrB2–SiC Composites at Low Pressures

ZrB₂‐60 mol%SiC composite with a eutectic microstructure was oxidized at 1573 to 1873 K with reduced total pressures (P_tot) and low oxygen partial pressures (). The mass change was continuously measured by a thermobalance, and then fit with a multiple paralinear model. Oxidation scale of SiO₂/ZrO₂+SiO₂/ZrO₂/ZrB₂ was formed at  > 0.13 kPa, whereas only porous ZrO₂ remained at  < 0.13 kPa, P_tot < 1.33 kPa and higher than 1773 K. With increasing , the parabolic oxidation constant decreased, whereas the linear oxidation constant increased.     

TEM Study of the High‐Temperature Oxidation Behavior of Hot‐Pressed ZrB2–SiC Composites

The oxidation behaviors of ZrB₂‐ 30 vol% SiC composites were investigated at 1500°C in air and under reducing conditions with oxygen partial pressures of 10⁴ and 10 ^{? 8} Pa, respectively. The oxidation of ZrB₂ and SiC were analyzed using transmission electron microscopy (TEM). Due to kinetic difference of oxidation behavior, the three layers (surface silica‐rich layer, oxide layer, and unreacted layer) were observed over a wide area of specimen in air, while the two layers (oxide layer, and unreacted layer) were observed over a narrow area in specimen under reducing condition. In oxide layer, the ZrB₂ was oxidized to ZrO₂ accompanied by division into small grains and the shape was also changed from faceted to round. This layer also consisted of amorphous SiO₂ with residual SiC and found dispersed in TEM. Based on TEM analysis of ZrB₂ – SiC composites tested under air and low oxygen partial pressure, the ZrB₂ begins to oxidize preferentially and the SiC remained without any changes at the interface between oxidized layer and unreacted layer.     

Oxygen diffusion mechanisms during high‐temperature oxidation of ZrB2‐SiC

Oxygen diffusion mechanisms during oxidation of ZrB₂‐30 vol% SiC were explored at temperatures of 1500°C and 1650°C using an ¹⁸O tracer technique. Double oxidation experiments in ¹⁶O₂ and ¹⁸O₂ were performed using a modified resistive heating system. A combination of scanning electron microscopy, energy‐dispersive spectroscopy, and time‐of‐flight secondary ion mass spectrometry was used to characterize the borosilicate and ZrO₂ oxidation products. Oxygen exchange with the borosilicate network was observed to occur quickly at the oxygen‐borosilicate surface at both 1500°C and 1650°C, while evidence of oxygen permeation was only observed at 1650°C for short time (<1 min) exposures. At longer times, >5‐9 min, complete oxygen exchange throughout both the borosilicate glass and ZrO₂ was observed at both temperatures preventing identification of the oxygen transport mechanisms, but demonstrating that oxygen transport is rapid in both oxide phases.     

Oxidation of ZrC-30 vol% SiC composite in air from low to ultrahigh temperature

Oxidation of ZrC-30 vol.% SiC is investigated in air using furnace and oxyacetylene torch. The microstructure and phase composition of oxide scales are analyzed via SEM, XRD, and Raman. At 800 and 1100 °C, SiC is embedded in the porous and cracked ZrO₂ scales, which have a single-layer structure and are almost non-protective. At 1300 and 1500 °C, the protective effect of oxide scales is enhanced by the formed SiO₂. The scales consist of two subscales, outer and inner layers, during oxidation at 1300 °C for ≥1 h, and 1500 °C for ≥15 min. The growth kinetics of both layers is analyzed. At ∼1700 °C, a new layer is observed between the outer and inner layers, which should contain less carbon than the inner layer. At ∼2100 °C, the oxide scale is porous and contains many big holes. This scale shows a single-layer structure, which mainly consists of ZrO₂.     

Mechanical Characterization of Annealed ZrB2–SiC Composites

Composites consisting of 70 vol% ZrB₂ and 30 vol% α‐SiC particles were hot pressed to near full density and subsequently annealed at temperatures ranging from 1000°C to 2000°C. Strength, elastic modulus, and hardness were measured for as‐processed and annealed composites. Raman spectroscopy was employed to measure the thermal residual stresses within the silicon carbide (SiC) phase of the composites. Elastic modulus and hardness were unaffected by annealing conditions. Strength was not affected by annealing at 1400°C or above; however, strength increased for samples annealed below 1400°C. Annealing under uniaxial pressure was found to be more effective than annealing without applied pressure. The average strength of materials annealed at 1400°C or above was ~700 MPa, whereas that of materials annealed at 1000°C, under a 100 MPa applied pressure, averaged ~910 MPa. Raman stress measurements revealed that the distribution of stresses in the composites was altered for samples annealed below 1400°C resulting in increased strength.     

Plasma Arc Welding of TiB2–20 vol% TiC

Ceramics consisting of titanium diboride with titanium carbide additions were fusion welded to produce continuous joins. A welding current of 135 A, welding speed of 8 cm/min, and plasma flow rate of 0.75 L/min were combined with a preheat temperature of ~1450°C to fusion weld coupons of TiB₂ containing 20 vol% TiC with a thickness of 4 mm. The resulting fusion zone (FZ) was 3.9 mm deep at the center of the joint and 10.4 mm wide. During cooling of the melt pool, four distinct regions of crystal growth and nucleation were observed due to thermal gradients. Regions at the top and bottom of the FZ exhibited smaller TiB₂ crystals due to higher nucleation rates whereas regions in the middle of the FZ showed higher growth rates, with TiB₂ crystals up to 1.2 mm in length. Thermal gradients also affected cooling of the eutectic phase, causing a cellular structure to appear in the cooled eutectic. Plasma arc welding was a viable method for joining diboride‐based ceramics.     

ZrB2–SiC Nano‐Powder Mixture Prepared Using ZrSi2 and Modified Spark Plasma Sintering

ZrB₂–SiC nano‐powder mixture was synthesized using ZrSi₂ source material and a modified spark plasma sintering apparatus. The particle size of ZrB₂ and SiC was about 80 and 20 nm, respectively. The molecular‐level homogeneity of Zr/Si source and fast heating/cooling rate by SPS caused the formation of homogeneously intermixed nano‐powders. A strong exothermal reaction occurred at around 860°C, which caused strong agglomeration and growth of the synthesized powder mixture. The rapid reaction could be controlled by adding 20 wt% of NaCl, which acted as an inert filler.     

High‐temperature mechanical behavior of ZrB2‐based composites with micrometer‐ and nano‐sized SiC particles

Using micrometer‐ and nano‐sized SiC particles as reinforcement phase, two ZrB₂‐SiC composites with high strength up to 1600°C were prepared using high‐energy ball milling, followed by hot pressing. The composite microstructure comprised finer equiaxed ZrB₂ and SiC grains and intergranular amorphous phase. The temperature dependency of flexure strength related to the initial particle size of SiC. In the case of micrometer‐sized SiC, the high‐temperature strength was improved up to 1500°C compared to room‐temperature strength, but the strength degraded at 1600°C, with strength values of 600‐770 MPa. In the case of nano‐sized SiC, the enhanced high‐temperature strength was observed up to 1600°C, with strength values of 680‐840 MPa.     

Effect of AlN Substitutions on the Oxidation Behavior of ZrB2–SiC Composites at 1600°C

The oxidation behavior of ZrB₂–SiC composites, with varying amounts of AlN substituting for ZrB₂, was studied isothermally under static ambient air at 1600°C for up to 5 h. Small amounts of AlN substitutions (≤10 vol%) were found to result in marginal improvement in the oxidation resistance, whereas larger amounts resulted in a significant deterioration. The size of ZrO₂ clusters formed on the oxidized surface was found to be a function of the AlN content. This effect was more pronounced after longer oxidation times (~1 h) as opposed to shorter durations (~5 min). It was postulated that presence of AlN results in the formation of Al₂O₃ during the oxidation process, subsequently resulting in a lowering of viscosity of the glassy silica scale, which facilitates the coarsening of ZrO₂ clusters. This also increases oxygen permeation through the scale which adversely affects the oxidation resistance of the high AlN content composites.     

Evaluation of Rare‐Earth Modified ZrB2–SiC Ablation Resistance Using an Oxyacetylene Torch

Rare‐earth modified ZrB₂–SiC coatings were prepared via mechanical mixing Sm₂O₃ or Tm₂O₃ powders with spray‐dried ZrB₂, or by chemically doping samarium ions into spray‐dried ZrB₂. In either approach, SiC powders were also added and coatings were fabricated via shrouded air plasma spray. An oxyacetylene torch was utilized to evaluate the coatings under high heat flux conditions for hold times of 30 and 60 s. The resulting phases and microstructures were evaluated as a function of rare‐earth type, modification approach, and ablation time. A brittle m‐ZrO₂ scale was observed in the ZrB₂/SiC‐only coating after ablative tests; during cooling this scale detached from the unreacted coating. In contrast, rare‐earth modified coatings formed a protective oxide scale consisting primarily of either Sm_0.2Zr_0.8O_1.9 or Tm_0.2Zr_0.8O_1.9, along with small amount of m‐ZrO₂. These rare‐earth oxide scales displayed high thermal stability and remained adhered to the unreacted coating during heating and cooling, offering additional oxidation protection.     

Microstructure and indentation damage resistance of ZrB2‐20 vol.%SiC ipo‐eutectic composites

Zirconium diboride with 20 vol.% silicon carbide bulk composites were fabricated using directionally solidification (DS) and also by spark plasma sintering (SPS) of crushed DS ingots. During the DS the cooling front aligned the c‐axis of ZrB₂ grains and its Lotgering factor of f_(00l) was high as 0.98. The Vickers hardness was anisotropic and it was high as 17.6 GPa along the c‐axis and 15.3 GPa when measured in an orthogonal direction. On both surfaces, even when using 100 N indentation load, no cracks were observed, suggesting a very high resistance to crack propagation. Such anomalous behavior was attributed to the hierarchical structure of DS sample where the ZrB₂ phase was under strong compression and the SiC phase was in tension. In the SPSed sample, the microstructure was isotropic respect to the direction of applied pressure. Indentation cracks appeared around the indent corners but not emanated from the diagonals, confirming high damage resistance.     

Effect of tantalum addition on microstructure and oxidation of spark plasma sintered ZrB2-20vol% SiC composites

Almost full density (>99% theoretical density (ρ_th)) was achieved for ZrB₂-20vol% SiC-Xwt.% Ta (X = 2,5, 5 and 10) composites after Spark Plasma Sintering (SPS) (Temperature: 1900 °C, Pressure: 50 MPa; Time: 3 min). The microstructure of ZrB₂-based composites exhibited core-rim structure and it consists of major crystalline phases (ZrB₂ core, (Zr, Ta)B₂ rim, SiC), minor amounts of ZrO₂ and (Zr, Ta)C solid solution phases. Both the specific weight (from 22.91 to 18.77 mg/cm²) and oxide layer thickness (401–195 μm) of ZrB₂-20vol% SiC composites decreased with increasing addition of Ta after the isothermal oxidation at 1500 °C for 10 h in air. The cross-sectional microstructure of oxidized samples displayed presence of a stack of three distinctive layers, which includes thick dense SiO₂ top layer, SiC depleted intermediate layer and unreacted bulk. The present work clearly demonstrated the advantage of tantalum addition in improving the oxidation resistance of ZrB₂-20vol% SiC.     

Chemical Potential‐Based Analysis for the Oxidation Kinetics of Si and SiC Single Crystals

A one‐dimensional diffusion problem with prescribed boundary conditions for the oxygen potential at the oxygen(gas)–silica and at the silica–substrate interfaces is employed to obtain the parabolic rate constant for oxidation of Si crystals. The results, using the data for diffusion and solubility of molecular oxygen in silica agree reasonably well with the oxidation kinetics results for Si from Deal and Grove (1965). The measurements for SiC crystals (Costello and Tressler, 1985) lie below these results for Si, even though in both instances, diffusion through the silica overlayer is expected to have been rate controlling. This difference is explained in terms of the lower Si activity at the SiC–SiO₂ interface than at the Si–SiO₂ interface. The implication of the interface structure is discussed in an attempt to explain the higher activation energy for oxidation of the Si‐face (0001), than the C‐face of SiC crystals.     

Dynamic Compressive Behavior of ZrB2‐Based Ceramic Composites at Room Temperature and 1073 K

The dynamic compressive behaviors of ZrB₂‐based ceramic composites were investigated through the convenient and high‐temperature Splitting Hopkinson Pressure Bars. The effects of strain rate on dynamic compressive strength, stress–strain relationship and fracture mechanisms were discussed in detail. Moreover, the influence of pre‐oxidation on dynamic strength was also studied at 1073 K. The results indicate that the relationship between dynamic compressive stress and strain for ZrB₂‐SiC‐graphite composite is strong nonlinear at room temperature and 1073 K. Dynamic compressive strength increases linearly with the increase of strain rate. The pre‐oxidation effect results in the enhancement of dynamic compressive strength at 1073 K in comparison with the room temperature strength. Based on the microstructures, the dominant intergranular fracture and pull‐out of graphite flake are observed at low strain rates, whereas the transgranular fracture and cutting of graphite flake are found at high strain rates. Fracture mechanisms play a crucial role on the changes of dynamic compressive strength and critical strain with strain rate.