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1.
Glass optics with ultra‐low roughness surfaces (<2 Å rms) are strongly desired for high‐end optical applications (e.g., lasers, spectroscopy, etc.). The complex microscopic interactions that occur between slurry particles and the glass workpiece during optical polishing ultimately determine the removal rate and resulting surface roughness of the workpiece. In this study, a comprehensive set of 100 mm diameter glass samples (fused silica, phosphate, and borosilicate) were polished using various slurry particle size distributions (PSD), slurry concentrations, and pad treatments. The removal rate and surface roughness of the glasses were characterized using white light interferometry and atomic force microscopy. The material removal mechanism for a given slurry particle is proposed to occur via nano‐plastic deformation (plastic removal) or via chemical reaction (molecular removal) depending on the slurry particle load on the glass surface. Using an expanded Hertzian contact model, called the Ensemble Hertzian Multi‐gap (EHMG) model, a platform has been developed to understand the microscopic interface interactions and to predict trends of the removal rate and surface roughness for a variety of polishing parameters. The EHMG model is based on multiple Hertzian contacts of slurry particles at the workpiece–pad interface in which the pad deflection and the effective interface gap at each pad asperity height are determined. Using this, the interface contact area and each particle's penetration, load, and contact zone are determined which are used to calculate the material removal rate and simulate the surface roughness. Each of the key polishing variables investigated is shown to affect the material removal rate, whose changes are dominated by very different microscopic interactions. Slurry PSD impacts the load per particle distribution and the fraction of particles removing material by plastic removal. The slurry concentration impacts the areal number density of particles and fraction of load on particles versus pad. The pad topography impacts the fraction of pad area making contact with the workpiece. The glass composition predominantly impacts the depth of plastic removal. Also, the results show that the dominant factor controlling surface roughness is the slurry PSD followed by the glass material's removal function and the pad topography. The model compares well with the experimental data over a variety of polishing conditions for both removal rate and roughness and can be extended to provide insights and strategies to develop practical, economic processes for obtaining ultra‐low roughness surfaces while simultaneously maintaining high material removal rates.  相似文献   

2.
During optical glass polishing, a number of interactions between the workpiece (i.e., glass), polishing slurry, and pad can influence the resulting workpiece roughness at different spatial scale lengths. In our previous studies, the particle size distribution of the slurry, the pad topography, and the amount of material removed by a single particle on the workpiece were shown to strongly correlate with roughness at AFM scale lengths (nm‐μm) and weakly at μ‐roughness scale lengths (μm‐mm). In this study, the polishing slurry pH and the generation of glass removal products are shown to influence the slurry particle spatial and height distribution at the polishing interface and the resulting μ‐roughness of the glass workpiece. A series of fused silica and phosphate glass samples were polished with various ceria and colloidal silica slurries over a range of slurry pH, and the resulting AFM roughness and μ‐roughness were measured. The AFM roughness was largely invariant with pH, suggesting that the removal function of a single particle is unchanged with pH. However, the μ‐roughness changed significantly, increasing linearly with pH for phosphate glass and having a maximum at an intermediate pH for fused silica. In addition, the spatial and height distribution of slurry particles on the pad (as measured by laser confocal microscopy) was determined to be distinctly different at low and high pH during phosphate glass polishing. Also, the zeta potential as a function of pH was measured for the workpiece, slurry, and pad with and without surrogate glass products (K3PO4 for phosphate glass and Si(OH)4 for silica) to assess the role of interfacial charge during polishing. The addition of K3PO4 significantly raised the zeta potential, whereas addition of Si(OH)4 had little effect on the zeta potential. An electrostatic DLVO three‐body force model, using the measured zeta potentials, was used to calculate the particle–particle, particle–workpiece, and particle–pad attractive and repulsive forces as a function of pH and the incorporation of glass products at the interface. The model predicted an increase in particle–pad attraction with an increase in pH and phosphate glass products consistent with the measured slurry distribution on the pads during phosphate glass polishing. Finally, a slurry “island” distribution gap (IDG) model has been formulated which utilizes the measured interface slurry distributions and a load balance to determine the interface gap, the contact area fraction, and the load on each slurry “island”. The IDG model was then used to simulate the workpiece surface topography and μ‐roughness; the results show an increase in roughness with pH similar to that observed experimentally.  相似文献   

3.
The nanomechanical deformations on glass surfaces near the elastic–plastic load boundary have been measured on various glasses by nanoscratching using an atomic force microscope (AFM) to mimic the mechanical interactions of polishing particles during optical polishing. Nanoscratches were created in air and aqueous environments using a 150‐nm radius diamond‐coated tip on polished fused silica, borosilicate, and phosphate glass surfaces; the topology of the nanoscratches were then characterized by AFM. Using load ranges expected on slurry particles during glass polishing (0.05–200 μN), plastic‐type scratches were observed with depths in the nm range. Nanoscratching in air generally showed deeper & narrower scratches with more pileup compared to nanoscratching in water, especially on fused silica glass. The critical load needed to observe plastic deformation was determined to range from 0.2–1.2 μN for the three glasses. For phosphate glass, the load dependence of the removal depth was consistent with that expected from Hertzian mechanics. However, for fused silica and borosilicate glass in this load range, the deformation depth showed a weak dependence with load. Using a sub‐Tg annealing technique, material relaxation was observed on the nanoscratches, suggesting that a significant fraction of the deformation was due to densification on fused silica and borosilicate glass. Repeated nanoscratching at the same location was utilized for determining the effective incremental plastic removal depth. The incremental removal depth decreased with increase in number of passes, stabilizing after ~10 passes. In water, the removal depths were determined as 0.3–0.55 nm/pass for fused silica, 0.85 nm/pass for borosilicate glass, and 2.4 nm/pass for phosphate glass. The combined nanoscratching results were utilized to define the composite removal function (i.e., removal depth) for a single polishing particle as a function of load, spanning the chemical to the plastic removal regimes. This removal function serves as an important set of parameters in understanding material removal during polishing and the resulting workpiece surface roughness.  相似文献   

4.
The nanomechanical deformations on a broad range of optical material surfaces (single crystals of Al2O3 [sapphire], SiC, Y3Al5O12 [YAG], CaF2, and LiB3O5 [LBO]; a SiO2–Al2O3–P2O5–Li2O glass-ceramics [Zerodur]; and glasses of SiO2:TiO2 [ULE], SiO2 [fused silica], and P2O5–Al2O3–K2O–BaO [Phosphate]) near the elastic-plastic load boundary have been measured by nanoindentation and nanoscratching to mimic the nanoplastic removal caused by a single slurry particle during polishing. Nanoindenation in air was performed to determine the workpiece hardness at various loads using a commercial nanoindenter with a Berkovich tip. Similarly, an atomic force microscope (AFM) with a stiff diamond coated tip (150 nm radius) was used to produce nanoplastic scratches in air and aqueous environments over a range of applied loads (~20-170 μN). The resulting nanoplastic deformation of the nanoscratches were used to calculate the removal function (i.e., depth per pass) which ranged from 0.18 to 3.6 nm per pass for these materials. A linear correlation between the nanoplastic removal function and the polishing rate (using a fixed polishing process with colloidal silica slurry on a polyurethane pad) of these materials was observed implying that: (a) the polishing mechanism using colloidal silica slurry can be dominated by mechanical rather than chemical interactions; and (b) the nanoplastic removal function, as opposed to interface particle interactions, is the controlling factor for the polishing material removal rate. Furthermore, this correlation is consistent with the Ensemble Hertzian Multi-Gap (EHMG) microscopic material removal rate model described previously. The nanoplastic removal depth was also found to correlate to the measured nanoindentation hardness (H1) of the optical material, scaling as H1−3.5. Two-dimensional (2D) finite element analysis simulations of nanoindentation showed a similar nonlinear dependence of plastic deformation with the workpiece material hardness. The findings of this study are used to determine an effective Preston coefficient for the material removal rate expression and enhance the predictive nature of the nanoplastic polishing rate for various materials utilizing their material properties.  相似文献   

5.
A new method of optical polishing termed “Convergent Polishing” is demonstrated where a workpiece, regardless of its initial surface figure, will converge to the lap shape in a single iteration. This method of polishing is accomplished by identifying the phenomena that contribute to non-uniform spatial material removal, and mitigating the non-uniformity for each phenomenon (except for the workpiece-lap mismatch due to the workpiece surface shape). The surface mismatch at the interface between the workpiece and lap causes a spatial and time varying pressure differential which decreases with removal, thus allowing the workpiece to converge to the shape of the lap. In this study, fused (amorphous) silica workpieces are polished using ceria slurry on various polyurethane pads. Polishing parameters were systematically controlled to prevent various sources of non-uniform material removal which include: (i) moment force, (ii) viscoelastic lap relaxation, (iii) kinematics, (iv) pad wear, and (v) workpiece bending. The last two are described herein. With these mitigations, removal uniformity has been demonstrated to within 1.0 μm over the surface after 83 μm of material removal corresponding to a within workpiece non-uniformity (WIWNU) of <1.2%. Also, convergence has been demonstrated down to 0.18 ± 0.04 μm peak-to-valley flatness on 100 mm-sized workpieces.  相似文献   

6.
The effects of temperature and material deposit on workpiece material removal spatial uniformity during optical pad polishing are described. Round and square‐fused silica workpieces (25–265 mm in size) were polished on a polyurethane pad using ceria slurry under various conditions. Using a nonrotated workpiece on a rotating lap, elevated temperatures (as measured by IR imaging), due to frictional heating at the workpiece–lap interface, were observed having a largely radial symmetric profile (relative to the lap center) on both the workpiece and lap with a peak temperature corresponding to the workpiece center. A 3D steady‐state thermal model of the polishing process, which accounts for the frictional heating and effective heat transfer from various surfaces, quantitatively describes the observed thermal profiles. The temperature spatial uniformity, which affects the material removal spatial uniformity, can be significantly improved using a rotated workpiece and a specially designed compensating septum during polishing. Next, using a rotating workpiece and lap, the workpiece surface develops two types of mid‐range structure: (1) fine ripples (sub‐mm scale length) that run circumferentially with respect to the lap, which have been attributed to microscopic islands of slurry on the lap leading to radial material removal nonuniformities; and (2) a center depression (cm scale length) which has been attributed to nonlinear slurry & glass products buildup at a specific radial lap location. A polishing simulator model (called Surface Figure or SurF), which accounts for workpiece wear, pad wear, and now deposition on the pad, correctly simulates the preferential material deposit on the pad and the center depression structure developed on the workpiece. Strategies, such as time averaging through kinematics and diamond conditioning, for preventing both these nonuniformities are demonstrated.  相似文献   

7.
The effects of ceria (CeO2) abrasives in chemical mechanical polishing (CMP) slurries were investigated on silicon dioxide (SiO2) and silicon nitride (Si3N4) polishing process. The ceria abrasives were prepared by the flux method, using potassium hydroxide (KOH) as the grain growth accelerator. The primary particle size of the ceria abrasives was controlled in the range of ~ 84-417 nm by changing the concentration of potassium hydroxide and the calcination temperature without mechanical milling process. The removal rate of silicon dioxide film strongly depended upon abrasive size up to an optimum abrasive size (295 nm) after CMP process. However, the surface uniformity deteriorated as abrasive size increases. The observed polishing results confirmed that there exists an optimum abrasive size (295 nm) for maximum removal selectivity between oxide and nitride films. In this study, polishing behaviors of the ceria abrasives were discussed in terms of morphological characteristics.  相似文献   

8.
Surface quality of fused silica, particularly surface defect and surface roughness, is a key factor affecting the performance of high-power laser and short-wave optical instrument, and so on. Herein, the super smooth surface of fused silica with roughness of sub-angstrom level and exceedingly few submicron defects was achieved by using ultrafine nano-CeO2 with primary particle size less than 4 nm, low secondary particle agglomeration strength, and high Ce3+ concentration. Furthermore, CeO2 involve in polishing process in the form of primary particle was certified by experiment. Moreover, the cause for the generation of submicron defects on fused silica surface was investigated for the first time from the perspective of secondary particle agglomeration strength of CeO2. The concentration of Ce3+ in CeO2 was characterized by the redshift of the band-gap energy, and the analysis of material removal rate (MRR) and contact angle of polished fused silica shows that Ce3+ enhances MRR through increasing the silanol group on fused silica.  相似文献   

9.
A partial charge-based chemical polishing model has been developed, which can serve as metric for describing the relative polishing material removal rate for different combinations of slurries and workpieces. A series of controlled polishing experiments utilizing a variety of colloidal polishing slurries (SiO2, CeO2, ZrO2, MgO, Sb2O5) and optical materials [single crystals of Al2O3 (sapphire), SiC, Y3Al5O12 (YAG), CaF2, and LiB3O5 (LBO); a SiO2-Al2O3-P2O5-Li2O glass ceramic (Zerodur); and glasses of SiO2:TiO2 (ULE), SiO2 (fused silica), and P2O5-Al2O3-K2O-BaO (Phosphate)] was performed and its material removal rate was measured. As previously proposed by Cook (J Non-Cryst Solids. 1990;120:152), for many polishing systems, the removal rate is governed by a series of chemical reactions which include the formation of a surface hydroxide, followed by condensation of that hydroxyl moiety with the polishing particle, and a subsequent hydrolysis reaction. The rate of condensation can often be the rate limiting step, thus it can determine the polishing material removal rate. By largely keeping the numerous other factors that influence material removal rate fixed (such as due to particle size distributions, interface interactions, pad topography, kinematics, and applied pressure), the material removal rate is shown to scale exponentially with the partial charge difference (δwp-s) between the workpiece and polishing slurry particle for many of the slurry-workpiece combinations indicating that condensation rate is the rate limiting step. The partial charge (δ) describes the equilibrium distribution of electron density between chemically bonded atoms and is related to the electronegativity of the atoms chemically bonded to one another. This partial charge model also explains the age-old experimental finding of why cerium oxide is the most effective polishing slurry for chemical removal of many workpieces. Some of the slurry-workpiece combinations that did not follow the partial charge dependence offer insight to other removal mechanisms or rate limiting reaction pathways.  相似文献   

10.
《Ceramics International》2022,48(14):19900-19912
Zirconia ceramics are the promising materials for cell phone backplanes in the 5G era, and smoother surfaces and higher removal efficiency are sought after for their precision machining. Although nanodiamond abrasives have high polishing rates, it is easy to bring mechanical scratches and pits on the ceramic surface because of their high hardness, resulting in degradation of the surface quality of the finished workpiece. Therefore, polyacrylamide grafted nanodiamond particles were prepared by solution polymerization method for polishing ceramic wafers. As confirmed by Fourier transform infrared spectroscopy (FTIR), the polyacrylamide has been grafted on the nanodiamond surface. According to the scanning electron microscopy (SEM) and particle size distribution, the composite abrasives have better dispersion than pure nanodiamond abrasives. The results of chemical mechanical polishing (CMP) experiments showed that the composite abrasives could reduce the average surface roughness (Sa, arithmetic mean height) of zirconia ceramic from 28.31 nm to 2.68 nm (scanning area is 500 μm × 500 μm), and the polishing rate remained high compared to pure nanodiamond abrasives, showing superior CMP performance. X-ray photoelectron spectroscopy (XPS) demonstrated that solid-phase chemical reactions occurred during the polishing process to form ZrSiO4. Meanwhile, contact-wear model combined with contact angle testing indicates that the introduction of polyacrylamide increases the contact area of the nanodiamond on the zirconia wafer surface, thereby significantly enhanced the mechanical effect.  相似文献   

11.
CeO2 (ceria) particles are considered as a type of ideal polishing particle used to polish glass substrate. The friction and wear of glass substrates caused by a single CeO2 particle is the origin of material removal in polishing, but this has not been well‐understood in previous research. In this investigation, the nanoscale friction and wear behaviors of the Nd‐doped phosphate laser glass and the BK7 optical glass were quantitatively studied against a single CeO2 particle by an atomic force microscopy in humid air. The investigations on the phosphate laser glass indicate directly that this type of glass cannot resist the wear when it rubs against the single CeO2 particle in the elastic contact in humid air. During the test, high friction coefficient and severe material removal were observed in the friction process. The chemical activity of the CeO2 particle was proved to be a cause that induces the tribochemical wear of the phosphate laser glass since the tribochemical wear cannot occur when a chemically inert diamond tip was used. On the other hand, the BK7 glass presented a much better wear‐resistance, where the friction coefficient is relatively lower and the expected tribochemical wear cannot occur in the same stress condition as compared with that for the phosphate laser glass, and the damage of the BK7 glass is more like the mechanical peeling of the asperities on the glass surface. The results provide new insights into single‐asperity friction and wear of glass materials, which would be useful in understanding the mechanisms of friction and material removal in polishing glass materials with ceria slurry.  相似文献   

12.
The chemical characteristics and the proposed formation mechanisms of the modified surface layer (called the Beilby layer) on polished fused silica glasses are described. Fused silica glass samples were polished using different slurries, polyurethane pads, and at different rotation rates. The concentration profiles of several key contaminants, such as Ce, K, and H, were measured in the near surface layer of the polished samples using Secondary Ion Mass Spectroscopy (SIMS). The penetration of K, originating from KOH used for pH control during polishing, decreased with increase in polishing material removal rate. In contrast, penetration of the Ce and H increased with increase in polishing removal rate. In addition, Ce penetration was largely independent of the other polishing parameters (e.g., particle size distribution and the properties of the polishing pad). The resulting K concentration depth profiles are described using a two‐step diffusion process: (1) steady‐state moving boundary diffusion (due to material removal during polishing) followed by (2) simple diffusion during ambient postpolishing storage. Using known alkali metal diffusion coefficients in fused silica glass, this diffusion model predicts concentration profiles that are consistent with the measured data at various polishing material removal rates. On the other hand, the observed Ce profiles are inconsistent with diffusion based transport. Rather we propose that Ce penetration is governed by the ratio of Ce–O–Si and Si–O–Si hydrolysis rates; where this ratio increases with interface temperature (which increases with polishing material removal rate) resulting in greater Ce penetration into the Beilby layer. Calculated Ce surface concentrations using this mechanism are in good agreement to the observed change in measured Ce surface concentrations with polishing material removal rate. These new insights into the chemistry of the Beilby layer, combined together with details of the single particle removal function during polishing, are used to develop a more detailed and quantitative picture of the polishing process and the formation of the Beilby layer.  相似文献   

13.
《Ceramics International》2020,46(4):4670-4678
For abrasive particles, the type, morphology, structure, size and distribution, physio-chemical properties are usually considered as key influential factors which determine the ultra-precision polishing performance. It is commonly recognized that the structure design, surface modification, and doping treatment of abrasives contribute to achieving high-quality and high-efficiency polishing. Herein, we report the fabrication of sub-100 nm monodispersed dendritic-like mesoporous silica (D-mSiO2) with tunable structures via an oil-water biphase stratification approach. A CeO2 thin shell was subsequently coated on the D-mSiO2 nanospheres forming core/shell structured D-mSiO2/CeO2 composites. The samples were examined via XRD, SEM, TEM, SAED, DLS, FTIR, and nitrogen adsorption-desorption measurements. The polishing characteristics of the D-mSiO2/CeO2 nano-abrasives over silica films were tracked by atomic force microscopy and noncontact interferometric microscopy. Compared with commercial ceria particles, the obtained D-mSiO2/CeO2 nano-abrasives were favorable for mechanical scratch elimination and removal rate enhancement. Furthermore, an enlarged pore volume or porosity of D-mSiO2 cores achieved an atomic-scale surface with relatively low roughness, less variation, and enhanced removal rate. The mechanism of high-efficiency and defect-free polishing for the CeO2-based composites was discussed. These results may provide promising guidance in the design and optimization of novel particle abrasives.  相似文献   

14.
《Ceramics International》2020,46(15):23828-23833
Zirconia ceramic, as mobile phone body-materials, will become increasingly important with the coming of 5G communication technology. Surface quality and material removal rate of zirconia ceramic cover are vital factors to determine its wide application. Therefore, mixed-shaped silica sol abrasives were prepared by ion connecting-inducting method and applied to achieve a good surface quality and a high material removal rate on zirconia ceramic cover by using chemical mechanical polishing (CMP). Mixed-shaped silica sol abrasives contained spherical and beaded shapes were measured by scanning electron microscopy (SEM). Si–O–Al bonds were formed in the mixed-shaped silica sol abrasives and were proved by X-ray photoelectron spectroscopy (XPS). Results of CMP tests showed that zirconia ceramic cover obtained a low surface roughness of 1.824 nm and an efficient material removal rate of 0.33 μm/h. Compared with traditional spherical silica sol abrasives, the polishing rate of mixed-shaped silica sol abrasives increased by 242%. Additionally, solid-phase chemical reactions happened to formed ZrSiO4, ZrAl2Si2O9 in the CMP process. Moreover, friction coefficient was tested and polishing mechanism had been explored by a contact-friction model in this work.  相似文献   

15.
《Ceramics International》2021,47(22):31681-31690
A functional Fe3O4/SiO2 core–shell abrasive was synthesized via hydrolysis of tetraethyl orthosilicate. A silica shell was successfully coated on a Fe3O4 core, resulting in a core-shell particle with an average diameter of 140 nm. The prepared core–shell abrasives was utilized for ultrasound-assisted magneto-rheological polishing (UAMP) of sapphire substrate. The experimental results showed that the Fe3O4/SiO2 core–shell abrasives exhibited a remarkable polishing performance for the sapphire material, resulting in smooth and detect-free surfaces with a high material removal rate (MRR) compared to mixed abrasives (Fe3O4 and SiO2) and pure Fe3O4 particles. The application of ultrasonic vibration to the sapphire wafer further improved the MRR, which was approximately 3.4 times higher than that of traditional magneto-rheological polishing. The largest MRR (1.974 μm/h) and comparatively low surface roughness (0.442 nm) of the polished sapphire wafer were achieved by UAMP with the Fe3O4/SiO2 core–shell abrasives. The polishing mechanism of the sapphire wafer is discussed in terms of chemical reactions and mechanical polishing.  相似文献   

16.
《Ceramics International》2020,46(9):13297-13306
Zirconia ceramics are regarded as the best development target for 5G mobile phone rear covers. However, it is necessary and urgent to improve the surface quality and processing efficiency of zirconia ceramics. Non-spherical silica abrasives were prepared by the KH550 induction method and were used in chemical mechanical polishing (CMP) of zirconia ceramics for the first time. While achieving low surface roughness of 1.9 nm, it has an efficient polishing rate of 0.31 μm/h which is superior to conventional abrasives. Silica particles are peanut-shaped and heart-shaped in the scanning electron microscopy image, and its distinctive morphology provides the possibility of its excellent polishing performance. X-ray photoelectron spectroscopy analysis shows that during the CMP process, silica abrasives and zirconia ceramic undergo a solid phase chemical reaction to form ZrSiO4. At the same time, the contact wear model established in combination with the coefficient of friction indicates that the two-dimensional surface contact mode of non-spherical silica abrasives on the surface of zirconia ceramics greatly improves its mechanical effect.  相似文献   

17.
The SOx storage and release kinetics on CeO2 have been studied by lean SOx adsorption and temperature programmed desorption for different pairwise configurations of individual monolith samples, i.e., Pt/CeO2 + SiO2, Pt/SiO2 + CeO2, CeO2 + Pt/SiO2 and CeO2 + SiO2. In the case of sole ceria, SOx adsorption proceeds both via SO2 and SO3 adsorption although the latter channel is kinetically favored. Hence, the rate of SO2 oxidation is crucial for the overall SOx storage kinetics. It is also found that physical contact between Pt and ceria is important for the storage process. This is attributed to efficient transport routes for SOx (surface diffusion and spill-over processes) and/or specific adsorption sites at the platinum–ceria interface. The main route for SOx release is found to be thermal decomposition where the effect of platinum is minor, although an indirect effect cannot be ruled out. Different mechanistic scenarios for SOx adsorption are discussed, which may serve as a guide for future experiments.  相似文献   

18.
周兆锋  洪捐  黄传锦 《硅酸盐通报》2021,40(3):1007-1015
半导体材料的超精密加工是一种获得高表面质量和表面完整性的加工技术,研抛磨粒是实现半导体材料超精密加工的关键耗材之一.从研抛磨粒的组成方式和结构特点,概述了研抛磨粒的研究现状和发展趋势.首先,构建了研抛界面内半导体材料工件-研抛磨粒-研抛垫的接触模型,讨论了研抛磨粒的材质、形状、浓度、粒径等因素对半导体材料研抛质量和研抛...  相似文献   

19.
《Ceramics International》2022,48(7):9067-9074
K9 optical glass has an important position in the field of optical material because of its excellent chemical stability and optical projection. The hard and brittle characteristics of K9 optical glass make conventional processing difficult and time-consuming. A non-conventional hybrid polishing system combining ultrasonic atomization (UA) spraying method and axial ultrasonic vibration was developed for processing K9 optical glass. This system utilizes the high-frequency vibration characteristics of ultrasonic vibration technology: On the one hand, the ultrasonic atomization spraying method is used to generate evenly distributed atomized droplets for polishing, on the other hand, the axial ultrasonic vibration of the polishing tool provides impact kinetic energy for the free abrasive particles. Mechanical polishing (MP), ultrasonic-assisted polishing (UVP), mechanical polishing under ultrasonic atomization spraying (UA-MP) and ultrasonic vibration polishing under ultrasonic atomization spraying (UA-UVP) were carried out on K9 optical glass. The material removal rate (MRR), material removal depth (MRD), surface quality and surface micromorphology of the polished workpieces were also analyzed and compared. The experimental results showed that the best surface was obtained at UA-UVP (A = 9 μm) with MRR of 0.0994 mm3/min, material removal depth of 26.816 μm, the Ra and Sa values were 0.028 μm and 0.033 μm respectively. Meanwhile, no obvious pits and scratches were observed on the micromorphological surface. Ultrasonic atomization contributes to even material removal from the polished surface and axial ultrasonic vibration of the polishing tool has a significant effect in improving the polishing characteristics, which provides the experimental basis for applying ultrasonic vibration technology in polishing.  相似文献   

20.
《Ceramics International》2021,47(22):31691-31701
Driven by electrostatic attraction, Ce4+ ions or/and positively charged detonation nanodiamond (DND) particles can absorb onto negatively charged polystyrene (PS) spherical colloids. Three types of core-shell structured composite abrasives, PS@CeO2, PS@DND and PS@CeO2/DND, can thus be assembled. When PS@CeO2 and PS@DND were used to polish sapphire wafer at pad rotating speed of 120–150 r/min and load pressure of ~3 kg, the material removing rate (MRR) exceeded 1.0 μm h−1, 10–20 % higher than unitary abrasives. The surface profile roughness (Ra) for wafer polished by these two composite abrasives was respectively 1.25 and 0.63 nm, which is superior to CeO2 (Ra = 1.38 nm) and DND (Ra = 1.29 nm). When using PS@CeO2/DND, the polishing interface area can be increased owing to the combined effect of elastic PS spheres and intensively coated CeO2 and DND. Meanwhile, the synergistic mechanism of sapphire-CeO2 chemical reaction and the strong mechanical abrasion of DND particles benefit the polishing efficiency. MRR for this ternary composite abrasive attained 1.4–1.7 μm h−1 while sapphire can be smoothed to a sub-nanoscale roughness.  相似文献   

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