High-temperature bending strength,internal friction and stiffness of ZrB2–20 vol% SiC ceramics

Dense ZrB₂–20 vol% SiC ceramics (ZS) were fabricated by hot pressing using self-synthesized high purity ZrB₂ and commercial SiC powders as raw materials. The high temperature flexural strength of ZS and its degradation mechanisms up to 1600 °C in high purity argon were investigated. According to the fracture mode, crack origin and internal friction curve of ZS ceramics, its strength degradation above 1000 °C is considered to result from a combination of phenomena such as grain boundary softening, grain sliding and the formation of cavitations and cracks around the SiC grains on the tensile side of the specimens. The ZS material at 1600 °C remains 84% of its strength at room temperature, which is obviously higher than the values reported in literature. The benefit is mainly derived from the high purity of the ZrB₂ powders.     

SiC Depletion in ZrB2–30 vol% SiC at Ultrahigh Temperatures

The formation of a porous SiC‐depleted region in ZrB₂–SiC due to active oxidation at ultrahigh temperatures was characterized. The presence/absence of SiC depletion was determined at a series of temperatures (1300°C–1800°C) and times (5 min–100 h). At T < 1627°C, SiC depletion was not observed. Instead, the formation of a ZrO₂ + C/borosilicate oxidation product layer sequence was observed above the ZrB₂–SiC base material. At T ≥ 1627°C, SiC was depleted in the ZrB₂ matrix below the ZrO₂ and borosilicate oxidation products. The SiC depletion was attributed to active oxidation of SiC to form SiO(g). The transition between C formation in ZrO₂ (T < 1627°C) and SiC depletion in ZrB₂ (T ≥ 1627°C) is attributed to variation in the temperature dependence of thermodynamically favored product assemblage influenced by the local microstructural phase distribution. The growth kinetics of the SiC depletion region is consistent with a gas‐phase diffusion‐controlled process.     

Electrical and thermophysical properties of ZrB2 and HfB2 based composites

Electrical resistivities, thermal conductivities and thermal expansion coefficients of hot-pressed ZrB₂–SiC, ZrB₂–SiC–Si₃N₄, ZrB₂–ZrC–SiC–Si₃N₄ and HfB₂–SiC composites have been evaluated. Effects of Si₃N₄ and ZrC additions on electrical and thermophysical properties of ZrB₂–SiC composite have been investigated. Further, properties of ZrB₂–SiC and HfB₂–SiC composites have been compared. Electrical resistivities (at 25 °C), thermal conductivities (between 25 and 1300 °C) and thermal expansion coefficients (over 25–1000 °C) have been determined by four-probe method, laser flash method and thermo-mechanical analyzer, respectively. Experimental results have shown reasonable agreement with theoretical predictions. Electrical resistivities of ZrB₂-based composites are lower than that of HfB₂–SiC composite. Thermal conductivity of ZrB₂ increases with addition of SiC, while it decreases on ZrC addition, which is explained considering relative contributions of electrons and phonons to thermal transport. As expected, thermal expansion coefficient of each composite is reduced by SiC additions in 25–200 °C range, while it exceeds theoretical values at higher temperatures.     

Effect of silicon/graphite ratio and temperature on oxidation protective properties of SiC/ZrB2–SiC coatings prepared by pack cementation

To investigate the silicon/graphite ratio and temperature on preparation and properties of ZrB₂–SiC coatings, ZrB₂, silicon, and graphite powders were used as pack powders to prepare ZrB₂–SiC coatings on SiC coated graphite samples at different temperatures by pack cementation method. The composition, microstructure, thermal shock, and oxidation resistance of these coatings were characterized and assessed. High silicon/graphite ratio (in this case, 2) did not guarantee higher coating density, instead could be harmful to coating formation and led to the lump of pack powders, especially at temperatures of 2100 and 2200 °C. But residual silicon in the coating is beneficial for high density and oxidation protection ability. The SiC/ZrB₂–SiC (ZS50-2) coating prepared at 2000 °C showed excellent oxidation protective ability, owing to the residual silicon in the coating and dense coating structure. The weight loss of ZS50-2 after 15 thermal shocks between 1500 °C and room temperature, and oxidation for 19 h at 1500 °C are 6.5% and 2.9%, respectively.     

Oxidation behavior of hot pressed ZrB2–SiC and HfB2–SiC composites

Non-isothermal, isothermal and cyclic oxidation behavior of hot pressed ZrB₂–20 (vol.%) SiC (ZS) and HfB₂–20 SiC (HS) composites have been compared. Studies involving heating in thermogravimetric analyzer have shown sharp mass increases at 740 and 1180 °C for ZS, and mass gain till 1100 °C followed by loss for HS. Isothermal oxidation tests for 1, 24 and 100 h durations at 1200 or 1300 °C have shown formation of partially and completely stable oxide scales after ～24 h exposure for ZS and HS, respectively. X-ray diffraction, scanning electron microscopy and energy or wavelength dispersive spectroscopy has confirmed presence of ZrO₂ or HfO₂ in oxide scales of ZS or HS, respectively, besides B₂O₃–SiO₂. Degradation appears more severe in isothermally oxidized ZS due to phase transformations in ZrO₂; and is worse in HS on cyclic oxidation at 1300 °C with air cooling, because of higher thermal residual stresses in its oxide scale.     

ZrB2–SiC laminated ceramic composites

The oxidation behavior for ZrB₂–20 vol% SiC (ZS20) and ZrB₂–30 vol% SiC (ZS30) ceramics at 1500 °C was evaluated by weight gain measurements and cross-sectional microstructure analysis. Based on the oxidation results, laminated ZrB₂–30 vol% SiC (ZS30)/ZrB₂–25 vol% SiC (ZS25)/ZrB₂–30 vol% SiC (ZS30) symmetric structure with ZS30 as the outer layer were prepared. The influence of thermal residual stress and the layer thickness ratio of outer and inner layer on the mechanical properties of ZS30/ZS25/ZS30 composites were studied. It was found that higher surface compressive stress resulted in higher flexural strength. The fracture toughness of ZS30/ZS25/ZS30 laminates was found to reach to 10.73 MPa m^1/2 at the layer thickness ratio of 0.5, which was almost 2 times that of ZS30 monolithic ceramics.     

Elevated Temperature Strength Enhancement of ZrB2–30 vol% SiC Ceramics by Postsintering Thermal Annealing

The mechanical properties of dense, hot‐pressed ZrB₂–30 vol% SiC ceramics were characterized from room temperature up to 1600°C in air. Specimens were tested as hot‐pressed or after hot‐pressing followed by heat treatment at 1400°C, 1500°C, 1600°C, or 1800°C for 10 h. Annealing at 1400°C resulted in the largest increases in flexure strengths at the highest test temperatures, with strengths of 470 MPa at 1400°C, 385 MPa at 1500°C, and 425 MPa at 1600°C, corresponding to increases of 7%, 8%, and 12% compared to as hot‐pressed ZrB₂–SiC tested at the same temperatures. Thermal treatment at 1500°C resulted in the largest increase in elastic modulus, with values of 270 GPa at 1400°C, 240 GPa at 1500°C, and 120 GPa at 1600°C, which were increases of 6%, 12%, and 18% compared to as hot‐pressed ZrB₂–SiC. Neither ZrB₂ grain size nor SiC cluster size changed for these heat‐treatment temperatures. Microstructural analysis suggested additional phases may have formed during heat treatment and/or dislocation density may have changed. This study demonstrated that thermal annealing may be a useful method for improving the elevated temperature mechanical properties of ZrB₂‐based ceramics.     

Effects of Si3N4 and WC on the oxidation resistance of ZrB2/SiC ceramic tool materials

ZrB₂/SiC, ZrB₂/SiC/Si₃N₄ and ZrB₂/SiC/WC ceramic tool materials were prepared by spark plasma sintering technology, and their oxidation resistance was tested at different oxidation temperatures. When the oxidation temperature is 1300 °C, the oxide layer thickness, oxidation weight gain and flexural strength of ZrB₂/SiC/Si₃N₄ ceramic tool material after oxidation are 8.476 μm, 1.436 mg cm^?2 and 891.0 MPa, respectively. Compared with ZrB₂/SiC ceramic tool materials, the oxide layer thickness and oxidation weight gain are reduced by 8.2% and 11.8%, respectively, and the flexural strength after oxidation is increased by 116.1%. However, the addition of WC significantly reduces the oxidation resistance of the ceramic tool material. A dense oxide film is formed on the surface of ZrB₂/SiC/Si₃N₄ ceramic tool material during oxidation, which effectively prevents oxygen from entering the inside of the material, thereby improving the oxidation resistance of the ceramic tool material.     

Effect of LaB6 addition on compressive creep behavior with simultaneous oxide scale growth of spark plasma sintered ZrB2-SiC composites

A study has been carried out to examine the effect of LaB₆ addition on the compressive creep behavior of ZrB₂-SiC composites at 1300–1400°C under stresses between 47 and 78 MPa in laboratory air. The ZrB₂-20 vol% SiC composites containing LaB₆ (10% in ZSBCL-10 and 14% in ZSBCL-14) besides 5.6% B₄C and 4.8% C as additives were prepared by spark plasma sintering at 1600°C. Due to cleaner interfaces and superior oxidation resistance, the ZSBCL-14 composite has exhibited a lower steady-state creep rate at 1300°C than the ZSBCL-10. The obtained stress exponent (n ∼ 2 ± 0.1) along with cracking at ZrB₂ grain boundaries and ZrB₂-SiC interfaces are considered evidence of grain boundary sliding during creep of the ZSBCL-10 composite. However, the values of n ∼ 1 and apparent activation energy ∼700 kJ/mol obtained for the ZSBCL-14 composite at 1300–1400°C suggest that ZrB₂ grain boundary diffusion is the rate-limiting mechanism of creep. The thickness of the damaged outer layer containing cracks scales with temperature and applied stress, indicating their role in facilitating the ingress of oxygen causing oxide scale growth. Decreasing oxidation-induced defect density with depth to a limit of ∼280 μm, indicates the predominance of creep-based deformation and damage at the inner core of samples.     

High‐temperature tensile strength and fracture behavior of ZrB2‐SiC‐graphite composite

The tensile behavior of ZrB₂‐SiC‐graphite composite was investigated from room temperature to 1800°C. Results showed that tensile strength was 134.18 MPa at room temperature, decreasing to 50.34 MPa at 1800°C. A brittle‐ductile transition temperature (1300°C) of ZrB₂‐SiC‐graphite composite was deduced from experimental results. Furthermore, the effect of temperature on the fracture behavior of ZrB₂‐SiC‐graphite composite was further discussed by microstructure observations, which showed that tensile strength was controlled by the relaxation of thermal residual stress below 1300°C, and was affected by the plastic flow during 1300°C and 1400°C. At higher temperature, the tensile strength was dominated by the changes of microstructures.     

Microstructure and densification of ZrB2–SiC composites prepared by spark plasma sintering

ZrB₂–SiC composites were prepared by spark plasma sintering (SPS) at temperatures of 1800–2100 °C for 180–300 s under a pressure of 20 MPa and at higher temperatures of above 2100 °C without a holding time under 10 MPa. Densification, microstructure and mechanical properties of ZrB₂–SiC composites were investigated. Fully dense ZrB₂–SiC composites containing 20–60 mass% SiC with a relative density of more than 99% were obtained at 2000 and 2100 °C for 180 s. Below 2120 °C, microstructures consisted of equiaxed ZrB₂ grains with a size of 2–5 μm and α-SiC grains with a size of 2–4 μm. Morphological change from equiaxed to elongated α-SiC grains was observed at higher temperatures. Vickers hardness of ZrB₂–SiC composites increased with increasing sintering temperature and SiC content up to 60 mass%, and ZrB₂–SiC composite containing 60 mass% SiC sintered at 2100 °C for 180 s had the highest value of 26.8 GPa. The highest fracture toughness was observed for ZrB₂–SiC composites containing 50 mass% SiC independent of sintering temperatures.     

Preparation and characterization of ultrafine ZrB2–SiC composite powders by a combined sol–gel and microwave boro/carbothermal reduction method

A combined sol–gel and microwave boro/carbothermal reduction technique was investigated and used to synthesize ultrafine ZrB₂–SiC composite powders from raw starting materials of zirconium oxychloride, boric acid, tetraethoxysilane and glucose. The effects of reaction temperature, molar ratios of n(B)/n(Zr) and n(C)/n(Zr+Si) on the synthesis of ultrafine ZrB₂–SiC composite powders were studied. The results showed that the optimum molar ratios of n(B)/n(Zr) and n(C)/n(Zr+Si) for the preparation of phase pure ultrafine ZrB₂–SiC composite powders were 2.5 and 8.0, respectively, and the firing temperature required was 1300 °C. This temperature was 200 °C lower than that require by using the conventional boro/carbothermal reduction method. Microstructures and phase morphologies of as-prepared ultrafine ZrB₂–SiC composite powders were examined by field emission-scanning electron microscopy (FE-SEM) and transmission electron microscope (TEM), showing that SiC grains were formed evenly among the ZrB₂ grains, and the grain sizes of ZrB₂ in the samples prepared at 1300 °C for 3 h were about 1–2 μm. The average crystalline sizes of these two phases in the as-prepared samples were calculated by using the Scherrer equation as about 58 and 27 nm, respectively.     

Fabrication and properties of ZrB2–SiC–BN machinable ceramics

ZrB₂–SiC–BN ceramics were fabricated by hot-pressing under argon at 1800 °C and 23 MPa pressure. The microstructure, mechanical and oxidation resistance properties of the composite were investigated. The flexural strength and fracture toughness of ZrB₂–SiC–BN (40 vol%ZrB₂–25 vol%SiC–35 vol%BN) composite were 378 MPa and 4.1 MPa m^1/2, respectively. The former increased by 34% and the latter decreased by 15% compared to those of the conventional ZrB₂–SiC (80 vol%ZrB₂–20 vol%SiC). Noticeably, the hardness decreased tremendously by about 67% and the machinability improved noticeably compared to the relative property of the ZrB₂–SiC ceramic. The anisothermal and isothermal oxidation behaviors of ZrB₂–SiC–BN composites from 1100 to 1500 °C in air atmosphere showed that the weight gain of the 80 vol%ZrB₂–20 vol%SiC and 43.1 vol%ZrB₂–26.9 vol%SiC–30 vol%BN composites after oxidation at 1500 °C for 5 h were 0.0714 and 0.0268 g/cm², respectively, which indicates that the addition of the BN enhances oxidation resistance of ZrB₂–SiC composite. The improved oxidation resistance is attributed to the formation of ample liquid borosilicate film below 1300 °C and a compact film of zirconium silicate above 1300 °C. The formed borosilicate and zirconium silicate on the surface of ZrB₂–SiC–BN ceramics act as an effective barriers for further diffusion of oxygen into the fresh interface of ZrB₂–SiC–BN.     

ZrB2–SiC–G Composite Prepared by Spark Plasma Sintering of In‐Situ Synthesized ZrB2–SiC–C Composite Powders

To avoid introduction of milling media during ball‐milling process and ensure uniform distribution of SiC and graphite in ZrB₂ matrix, ultrafine ZrB₂–SiC–C composite powders were in‐situ synthesized using inorganic–organic hybrid precursors of Zr(OPr)₄, Si(OC₂H₅)₄, H₃BO₃, and excessive C₆H₁₄O₆ as source of zirconium, silicon, boron, and carbon, respectively. To inhabit grain growth, the ZrB₂–SiC–C composite powders were densified by spark plasma sintering (SPS) at 1950°C for 10 min with the heating rate of 100°C/min. The precursor powders were investigated by thermogravimetric analysis–differential scanning calorimetry and Fourier transform infrared spectroscopy. The ceramic powders were analyzed by X‐ray diffraction, X‐ray photoelectron spectroscopy, and scanning electron microscopy. The lamellar substance was found and determined as graphite nanosheet by scanning electron microscopy, Raman spectrum, and X‐ray diffraction. The SiC grains and graphite nanosheets distributed in ZrB₂ matrix uniformly and the grain sizes of ZrB₂ and SiC were about 5 μm and 2 μm, respectively. The carbon converted into graphite nanosheets under high temperature during the process of SPS. The presence of graphite nanosheets alters the load‐displacement curves in the fracture process of ZrB₂–SiC–G composite. A novel way was explored to prepare ZrB₂–SiC–G composite by SPS of in‐situ synthesized ZrB₂–SiC–C composite powders.     

Long-term oxidation and ablation behavior of Cf/ZrB2–SiC composites at 1500, 2000, and 2200°C

Although C_f/ZrB₂–SiC composites prepared via direct ink writing combined with low-temperature hot-pressing were shown to exhibit high relative density, high preparation efficiency, and excellent flexural strength and fracture toughness in our previous work, their oxidation and ablation resistance at high and ultrahigh temperatures had not been investigated. In this work, the oxidation and ablation resistance of C_f/ZrB₂–SiC composites were evaluated via static oxidation at high temperature (1500°C) and oxyacetylene ablation at ultrahigh temperatures (2080 and 2270°C), respectively. The thickness of the oxide layer of the C_f/ZrB₂–SiC composites is <40 μm after oxidizing at 1500°C for 1 h. The C_f/ZrB₂–SiC composites exhibit non-ablative properties after oxyacetylene ablation at 2080 and 2270°C for >600 s, with mass ablation rates of 3.77 × 10⁻³ and 5.53 × 10⁻³ mg/(cm² s), and linear ablation rates of −4.5 × 10⁻⁴ and −5.8 × 10⁻⁴ mm/s, respectively. Upon an increase in the ablation temperature from 2080 to 2270°C, the thickness of the total oxide layer increases from 360 to 570 μm, and the carbon fibers remain intact in the unaffected region. Moreover, the oxidation and ablation process of C_f/ZrB₂–SiC at various temperatures was analyzed and discussed.     

Aqueous Gelcasting and Pressureless Sintering of Zirconium Diboride Ceramics

Dense (97.3%) zirconium diboride (ZrB₂) ceramics were obtained via gelcasting and pressureless sintering. Four wt% B₄C was used as sintering aid. ZrB₂, SiC, and B₄C can codisperse well in the alkaline region, using a polyacrylate dispersant. Compared with monolithic ZrB₂ (Z), the mechanical properties of ZrB₂‐SiC (ZS) were enhanced. The Vickers hardness and fracture toughness of ZS were (13.1 ± 0.6) GPa and (2.5 ± 0.4) MPa m^1/2, respectively.     

Microstructural evolution of amorphous Si2BC3N nanopowders upon heating at high temperatures: High pressures reverse the nucleation order of SiC and BN(C)

Amorphous Si₂BC₃N nanopowders (NPs) were heated at 1000‐1700°C temperatures for 30 minutes in 1 atm N₂. The changes in phases, chemical bonds, and microstructures were investigated by XRD, XPS, NMR, TEM, and first‐principles calculation. Increases in heating temperatures lead to the nucleation and growth of SiC and BN(C) grains, along with partial transformation of SiC₄ units from amorphous to β/α‐SiC, and collapse of B–C–N bonds. SiC nucleates prior to BN(C) at 1 atm, while it goes in the opposite order at high pressures (≥1 GPa). High pressures also shift the initial temperatures of crystallization of amorphous Si₂BC₃N NPs from 1400°C (1 atm) to 1150°C (5 GPa).     

Thermal Shock Resistance of Laminated ZrB2–SiC Ceramic Evaluated by Indentation Technique

In this work, the thermal shock behavior of laminated ZrB₂–SiC ceramic has been evaluated using indentation‐quench method based on propagation of Vickers cracks and compared with the monolithic ZrB₂–SiC ceramic. The results showed that the laminated ZrB₂–SiC ceramic exhibited better resistance to crack propagation and thermal shock under water quenching condition, and the critical temperature difference (ΔT_c) of laminated ZrB₂–SiC ceramic (ΔT_c ≈ 590°C) was much higher than that of monolithic ceramic (ΔT_c ≈ 290°C). The significant improvement in thermal shock resistance was attributed to residual stresses enhancing the resistance to crack growth during thermal shock loading.     

Mechanisms for Variability of ZrB2‐30 vol% SiC Oxidation Kinetics

The oxidation kinetics of ZrB₂‐30 vol% SiC were analyzed statistically with the goal of understanding the underlying mechanisms for observed variability. A box furnace was used to oxidize specimens for times between 30 s and 100 h at temperatures of 1300°C–1550°C in air. The specimens were characterized to determine weight change, scale thickness, and scale composition to quantify the oxidation behavior. Weight gain measurements of different specimens after 100 min of exposure showed differences of up to 2 mg/cm² for the same testing conditions where the average weight gain was 2.54 mg/cm². Variation of 30%–80% was observed in the average thickness of each layer of the oxide within a single specimen. Viscous glass flow was ruled out as a potential mechanism. Glass bubble formation was proposed as the main cause for oxidation kinetics variability.     

Self‐Generating High‐Temperature Oxidation‐Resistant Glass‐Ceramic Coatings for C–C Composites Using UHTCs

Carbon–carbon (C–C) composites are ideal for use as aerospace vehicle structural materials; however, they lack high‐temperature oxidation resistance requiring environmental barrier coatings for application. Ultra high‐temperature ceramics (UHTCs) form oxides that inhibit oxygen diffusion at high temperature are candidate thermal protection system materials at temperatures >1600°C. Oxidation protection for C–C composites can be achieved by duplicating the self‐generating oxide chemistry of bulk UHTCs formed by a “composite effect” upon oxidation of ZrB₂–SiC composite fillers. Dynamic Nonequilibrium Thermogravimetric Analysis (DNE‐TGA) is used to evaluate oxidation in situ mass changes, isothermally at 1600°C. Pure SiC‐based fillers are ineffective at protecting C–C from oxidation, whereas ZrB₂–SiC filled C–C composites retain up to 90% initial mass. B₂O₃ in SiO₂ scale reduces initial viscosity of self‐generating coating, allowing oxide layer to spread across C–C surface, forming a protective oxide layer. Formation of a ZrO₂–SiO₂ glass‐ceramic coating on C–C composite is believed to be responsible for enhanced oxidation protection. The glass‐ceramic coating compares to bulk monolithic ZrB₂–SiC ceramic oxide scale formed during DNE‐TGA where a comparable glass‐ceramic chemistry and surface layer forms, limiting oxygen diffusion.