Perovskite‐Structured BiFeO3–Bi(Zn1/2Ti1/2)O3–PbTiO3 Solid Solution Piezoelectric Ceramics with Curie Temperature About 700°C

In this article, perovskite‐structured BiFeO₃–Bi(Zn_1/2Ti_1/2)O₃–PbTiO₃ (BF–BZT–PT) ternary solid solutions were prepared with traditional solid‐state reaction method and demonstrated to exhibit a coexistent phase boundary (CPB) with Curie temperature of T_C~700°C in the form of ceramics with microstructure grain size of several micron. It was found that those CPB ceramics fabricated with conventional electroceramic processing are mechanically and electrically robust and can be poled to set a high piezoelectricity for the ceramics prepared with multiple calcinations and sintering temperature around 750°C. A high piezoelectric property of T_C = 560°C, d₃₃ = 30 pC/N, ε₃₃^T/ε₀ = 302, and tanδ = 0.02 was obtained here for the CPB 0.53BF–0.15BZT–0.32PT ceramics with average grain size of about 0.3 μm. Primary experimental investigations found that the enhanced piezoelectric response and reduced ferroelectric Curie temperature are closely associated with the small grain size of microstructure feature, which induces lattice structural changes of increased amount ratio of rhombohedral‐to‐tetragonal phase accompanying with decreased tetragonality in the CPB ceramics. Taking advantage of structural phase boundary feature like the Pb(Zr,Ti)O₃ systems, through adjusting composition and microstructure grain size, the CPB BF–BZT–PT ceramics is a potential candidate to exhibit better piezoelectric properties than the commercial K‐15 Aurivillius‐type bismuth titanate ceramics. Our essay is anticipated to excite new designs of high–temperature, high–performance, perovskite‐structured, ferroelectric piezoceramics and extend their application fields of piezoelectric transducers.     

Resistivity Enhancement and Transport Mechanisms in (1 − x)BaTiO3–xBi(Zn1/2Ti1/2)O3 and (1 − x)SrTiO3–xBi(Zn1/2Ti1/2)O3

Ceramics of composition (1?x)BaTiO₃–xBi(Zn_1/2Ti_1/2)O₃ (BT‐BZT) were prepared by solid‐state synthesis; they have been shown to exhibit excellent properties suited for high‐temperature dielectric applications. The X‐ray diffraction data showed a single‐phase perovskite structure for all the compositions prepared (x ≤ 0.1 BZT). The compositions with less than 0.075 BZT exhibited tetragonal symmetry at room temperature and pseudo‐cubic symmetry above it. Most notably, a significant improvement in insulation properties was measured with the addition of BZT. Both low‐field AC impedance and high‐field direct DC measurements indicated an increase in resistivity of at least two orders of magnitude at 400°C with the addition of just 0.03 BZT (~10⁷ Ω‐cm) into the solid solution as compared to pure BT (~10⁵ Ω‐cm). This effect was also evident in dielectric loss data, which remained low at higher temperatures as the BZT content increased. In conjunction with band gap measurements, it was also concluded that the conduction mechanism transitioned from extrinsic for pure BT to intrinsic for 0.075 BZT suggesting a change in the fundamental defect equilibrium conditions. It was also shown that this improvement in insulation properties was not limited to BT‐BZT, but could also be observed in the paraelectric SrTiO₃–BZT system.     

Pb(Mg1/3Nb2/3)O3–PbTiO3 Textured Ceramics with High Piezoelectric Response by a Novel Templated Grain Growth Approach

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ is used as a model system of perovskite solid solutions with very high piezoelectric response at tailored morphotropic phase boundaries to demonstrate the processing of textured ceramics by ceramic‐only technology. A novel homogeneous templated grain growth approach that uses conventional ceramic procedures and a single‐source nanocrystalline powder for the matrix and also for obtaining the templates is described. Two batches of (100) faceted cube‐shaped microcrystals with average sizes of 27 and 10 μm were successfully used as templates, and aligned by tape casting for the processing of <001>‐textured Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ piezoelectric ceramics. Materials with effective piezoelectric coefficients up to 1000 pC/N and ferroelectric properties approaching those of single crystals are obtained.     

Relaxor Characteristics of the Phase Transformation in (1 − x)BaTiO3–xBi(Zn1/2Ti1/2)O3 Perovskite Ceramics

The single‐phase solid solutions of the (1 ? x)BaTiO₃–(x)Bi(Zn_1/2Ti_1/2)O₃ (BT–BZT) where x = 0.02–0.15 were prepared to investigate dielectric properties. Crystal structure of samples was obtained by using an X‐ray diffraction technique and Raman spectroscopy. For compositions with x ≤ 0.08, the solid solutions exhibited clear tetragonal symmetry and transitioned to pseudocubic symmetry as the content of BZT increased. The dielectric response exhibited a sharp phase transition within the BT‐rich region and the composition 0.92BT–0.08BZT was characterized by the onset of relaxor characteristics. As the concentration of BZT increased, the phase transition exhibited broader and more diffuse behavior. The polarization as a function of electric field (P–E) of these solid solutions also exhibited the same trend. The BT‐rich compositions showed a normal ferroelectric P–E response with a decrease in loop area as the BZT content increased. The composition at x = 0.08 exhibited a pinched hysteresis loop and with further increase in BZT content, the P–E response was characterized by slim loops.     

Phase‐Composition‐Dependent Piezoelectric and Electromechanical Strain Properties in (Bi1/2Na1/2)TiO3–Ba(Ni1/2Nb1/2)O3 Lead‐Free Ceramics

New lead‐free perovskite solid solution ceramics of (1 ? x)(Bi_1/2Na_1/2)TiO₃–xBa(Ni_1/2Nb_1/2)O₃[(1?x)BNT–xBNN,x = 0.02–0.06) were prepared and their dielectric, ferroelectric, piezoelectric, and electromechanical properties were investigated as a function of the BNN content. The X‐ray diffraction results indicated that the addition of BNN has induced a morphotropic phase transformation from rhombohedral to pseudocubic symmetry approximately at x = 0.045, accompanying an evolution of dielectric relaxor behavior as characterized by enhanced dielectric diffuseness and frequency dispersion. In the proximity of the ferroelectric rhombohedral and pseudocubic phase coexistence zone, the x = 0.045 ceramics exhibited optimal piezoelectric and electromechanical coupling properties of d₃₃~121 pC/N and k_p~0.27 owing to decreased energy barriers for polarization switching. However, further addition of BNN could cause a decrease in freezing temperatures of polar nanoregions till the coexistence of nonergodic and ergodic relaxor phases occurred near room temperature, especially for the x = 0.05 sample which has negligible negative strains and thus show the maximum electrostrain of 0.3% under an external electric field of 7 kV/mm, but almost vanished piezoelectric properties. This was attributed to the fact that the induced long‐range ferroelectric order could reversibly switch back to its original ergodic state upon removal of external electric fields.     

Tailoring the Piezoelectric and Relaxor Properties of (Bi1/2Na1/2)TiO3–BaTiO3 via Zirconium Doping

This article details the influence of zirconium doping on the piezoelectric properties and relaxor characteristics of 94(Bi_1/2Na_1/2)TiO₃–6Ba(Zr_xTi_1?x)O₃ (BNT–6BZT) bulk ceramics. Neutron diffraction measurements of BNT–6BZT doped with 0%–15% Zr revealed an electric‐field‐induced transition of the average crystal structure from pseudo‐cubic to rhombohedral/tetragonal symmetries across the entire compositional range. The addition of Zr up to 10% stabilizes this transition, resulting in saturated polarization hysteresis loops with a maximum polarization of 40 μC/cm² at 5.5 kV/mm, while corresponding strain hysteresis measurements yield a maximum strain of 0.3%. With further Zr addition, the ferroelectric order is progressively destabilized and typical relaxor characteristics such as double peaks in the current density loops are observed. In the strain hysteresis, this destabilization leads to an increase of the maximum strain by 0.05%. These changes to the physical behavior caused by Zr addition are consistent with a reduction of the transition temperature T_F‐R, above which the field‐induced transformation from the relaxor to ferroelectric state becomes reversible.     

Highly (100)‐Oriented Bi(Ni1/2Hf1/2)O3‐PbTiO3 Relaxor‐Ferroelectric Films for Integrated Piezoelectric Energy Harvesting and Storage System

Highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO₂/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm³ was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm³ obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.     

Large Piezoelectric Response and Polarization in Relaxor Ferroelectric PbTiO3–Bi(Ni1/2Zr1/2)O3

New binary system (1?x) PbTiO₃?xBi(Ni_1/2Zr_1/2)O₃ (PT–100x BNZ) with x ≤ 0.45 were synthesized via solid‐state reaction route. A morphotropic phase boundary (MPB) was identified around x = 0.40 by X‐ray diffraction (XRD) method. The ceramics with MPB composition exhibit enhanced ferroelectric properties. A large piezoelectric coefficient (d₃₃) up to 400 pC/N was obtained for the PT–40BNZ, which is comparable with the PbTiO₃–BiScO₃ (PT–BS, 450 pC/N).The frequency dependence of dielectric permittivity of PT–40BNZ shows characteristic of a strong relaxor feature and a transition temperature around 290°C (1 MHz). Temperature effect on the unipolar strain was also investigated. The present system with high d₃₃ is a competitive piezoelectric material, as no expensive oxide is used here compared with the PT–BS.     

Phase Diagram and Properties of High TC/TR−T Pb(In1/2Nb1/2) O3–Pb(Zn1/3Nb2/3)O3–PbTiO3 Ferroelectric Ceramics

A ternary ferroelectric ceramic system, (1?x?y)Pb(In_1/2Nb_1/2)O₃–xPb(Zn_1/3Nb_2/3)O₃–yPbTiO₃ (PIN–PZN–PT, x = 0.21, 0.27, 0.36, 0.42), was prepared using a two‐step precursor method. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) was identified by X‐ray diffraction. The optimum piezoelectric and electromechanical properties were achieved for a composition close to MPB (0.5PIN–0.21PZN–0.29PT), where the piezoelectric coefficient d₃₃, planar electromechanical coupling factor k_p, and remnant polarization P_r are 660 pC/N,72%, and 45 μC/cm², respectively. The Curie temperature T_C and rhombohedral to tetragonal phase transition temperature T_R?T were also derived by temperature dependence of dielectric measurements. The strongly “bended” MPB in the PIN–PT system was found to be “flattened” after addition of PZN in the PIN–PT–PZN system. The results demonstrate a possibility of growing ferroelectric single crystals with high electromechanical properties and expanded range of application temperature.     

Crystal Structure and Electrical Properties of Lead‐Free (1 − x)BaTiO3–x(Bi1/2A1/2)TiO3 (A = Ag,Li, Na,K, Rb,Cs) Ceramics

Ceramics of solid solutions (1  ?  x)BaTiO₃–x(Bi_1/2A_1/2)TiO₃ (A = Ag, Li, Na, K, Rb, Cs, x ≤ 0.20) were prepared and their crystal structures, dielectric, ferroelectric, and piezoelectric properties were investigated. It was found that (Bi_1/2A_1/2)TiO₃‐type doping compounds broadened the temperature range of the tetragonal phase in BaTiO₃ and all the compositions examined displayed a tetragonal structure at room temperature. The Curie temperature (T_C) was observed to increase with respect to pure BaTiO₃ to the range 140°C–210°C through solid solution. Remanent polarization (P_r) tended to decrease with increased content of doping compound, whereas the coercive field (E_C) rose and piezoelectric coefficient (d₃₃) fell. The highest d₃₃ value in the solid solutions was observed in 0.97BaTiO₃–0.03(Bi_1/2Ag_1/2)TiO₃ at 90 pC/N.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.     

Dielectric and Piezoelectric Properties of (1−x)K0.5Bi0.5TiO3–xBa(Ti0.8Zr0.2)O3 Ceramics

The properties of relaxor ceramics in the compositional series (1?x)K_0.5Bi_0.5TiO₃–xBa(Ti_0.8Zr_0.2)O₃ have been investigated. Values of T_m, the temperature of maximum relative permittivity, decreased from 380°C at x = 0.0 to below room temperature for x > 0.7. Compositions x = 0.1 and 0.2 were piezoelectric and ferroelectric. The maximum value of d₃₃ piezoelectric charge coefficient, 130 pC/N, and strain, 0.14%, occurred at x = 0.1. Piezoelectric properties of x = 0.1 were retained after thermal cycling from room temperature to 220°C, consistent with results from high‐temperature X‐ray diffraction indicating a transition to single‐phase cubic at ~300°C.     

Domain Structure Evolutions During the Poling Process for [011]‐Oriented PMN–xPT Crystals Across the MPB Region

The poling effect on the [011]‐oriented (1?x)Pb(Mg_1/3Nb_2/3)O₃‐xPbTiO₃ (PMN–xPT) single crystals across the morphotropic phase boundary (MPB) was studied. The dielectric and piezoelectric properties were investigated as a function of the poling field. Domain structure evolutions during the poling process were recorded. In the unpoled PMN–xPT phase diagram, an apparent rhombohedral (R)‐tetragonal (T) phase boundary exists. With room‐temperature poling, the structure transformation sequence strongly depends on the composition. The crystal experiences a direct transition to the 2R/2T domain state in the rhombohedral or tetragonal phase field beyond the MPB region, whereas within the MPB zone it is hard to achieve the 2R/2T engineered configuration although the initial state is either rhombohedral or tetragonal as well. The piezoelectric responses of the MPB·PMN–xPTs are extraordinary weak (d₃₃ ~ 250 pC/N), in contrast to the [011]‐oriented multidomain PMN–xPTs with ultrahigh‐piezoelectric coefficient (d₃₃ > 1000 pC/N). We demonstrate that a slight composition variation near the MPB will significantly influence the domain evolution route and piezoelectricity for the [011]‐oriented PMN–xPT crystals. We also confirm the feasibility to realize the 2R/2T engineered domain configuration for the [011]‐oriented MPB crystals, which will extend the desired portion of the Bridgeman‐grown boules with optimal piezoelectric properties.     

(K,Na, Li)(Nb,Ta)O3:Mn Lead‐Free Single Crystal with High Piezoelectric Properties

Lead‐free single crystal, (K, Na, Li)(Nb, Ta)O₃:Mn, was successfully grown using top‐seeded solution growth method. Complete matrix of dielectric, piezoelectric, and elastic constants for [001]_C poled single crystal was determined. The piezoelectric coefficient d₃₃ measured by the resonance method was 545 pC/N, which is almost three times that of its ceramic counterpart. The values measured by the Berlincourt meter ( = 630 pC/N) and strain–field curve ( = 870 pm/V) were even higher. The differences were assumed to relate with the different extrinsic contributions of domain wall vibration and domain wall translation during the measurements by different approaches, where the intrinsic contribution (on the order of 539 pm/V) was supposed to be the same. The crystal has ultrahigh electromechanical coupling factor (k₃₃ ~95%) and high ultrasound velocity, which make it promising for high‐frequency medical transducer applications.     

Structure and electrical properties of perovskite layer (1−x)Sr2Nb2O7‐x(Na0.5Bi0.5)TiO3 high‐temperature piezoceramics

The structure and electrical properties of perovskite layer structured (PLS) (1?x)Sr₂Nb₂O₇‐x(Na_0.5Bi_0.5)TiO₃ (SNO‐NBT) prepared by solid‐state reaction method are investigated. The addition of NBT is beneficial to speed up mass transfer and particle rearrangement during sintering, leading to better sinterability and higher bulk density up to 96.8%. The solid solution limit x in the SNO‐NBT system is below 0.03, over which Ti⁴⁺ is preferable to aggregate and results in the generation of secondary phase. After the modification by NBT, all SNO‐NBT ceramics have a Curie temperature T_c up to over 1300°C and piezoelectric constant d₃₃ about 1.0 pC/N. The breakthrough of piezoelectricity can mainly be attributed to rotation and distortion of oxygen octahedron as well as higher poling electric field resulting from the improved bulk density. This study not only demonstrates how to improve piezoelectricity by NBT addition, but also opens up a new direction to design PLS piezoceramics by introducing appropriate second phase.     

Seed‐Free Solid‐State Growth of Large Lead‐Free Piezoelectric Single Crystals: (Na1/2K1/2)NbO3

Large Na_0.5K_0.5NbO₃ (NKN) piezoelectric single crystals were obtained by seed‐free solid‐state crystal growth method, which is a traditional sintering grain growth process, with LiBiO₃ used as a sintering aid. The largest dimension of the single crystals obtained was 11 mm × 9 mm × 3 mm. In addition to the LiBiO₃ doping content, temperature, and time effect of the crystal growth process was systematically investigated and considered from the kinetics point of view. With the assistance of Avrami analysis, parameters relevant to the crystal growth process were determined. Laue diffraction and transmission electron microscopy suggested an orthorhombic symmetry for the single crystalline structure. Dielectric‐frequency‐temperature measurements revealed an orthorhombic‐tetragonal and tetragonal‐cubic phase transition at 155°C and 405°C, respectively, both of which are typical of first‐order transitions, and have a well‐defined thermal hysteresis. Rayleigh analysis was performed regarding to the extrinsic reversible and nonreversible piezoelectric properties, and the result suggested a dominant intrinsic reversible piezoelectric contribution of 91.5% under E₀ = 1 kV/cm AC amplitude. Such a single crystal growth process route is low cost and a relative simple preparation process.     

Effects of Nb,Mn doping on the Structure,Piezoelectric, and Dielectric Properties of 0.8Pb(Sn0.46Ti0.54)O3–0.2Pb(Mg1/3Nb2/3)O3 Piezoelectric Ceramics

Nb and Mn were doped, respectively, to 0.8Pb(Sn_0.46Ti_0.54)O₃–0.2Pb(Mg_1/3Nb_2/3)O₃ (PST–PMN) to improve electrical properties for meeting the requirement in various fields. The additions of Nb and Mn influence in a pronounced way the structure, and improve the densities of the ceramics. Nb‐doped PST–PMN increased the piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, and relative dielectric constant ε, indicating “soft” piezoelectric behavior. Mn doping played a “hard” part, which significantly enhanced the mechanical quality factor Q_m without deteriorating other piezoelectric properties. The most excellent properties of Nb‐doped PST–PMN were obtained with doping amount of 0.75 mol%, specifically d₃₃, k_p, being on the order of 455 pC/N, 57.5% and 3560, respectively. The addition of 0.75 mol% Mn for PST–PMN presented the optimum electrical properties, with Q_m of 554, d₃₃ of 430 pC/N, k_p of 57.0%, ε of 2770. It was proposed that the addition of Nb, Mn generated different defect dipoles involved in the domain walls motion and intrinsic piezoelectric responses, leading to different effects on electrical properties.     

Normal‐Relaxor‐Diffuse Ferroelectric Phase Transition and Electrical Properties of Bi(Mg1/2Ti1/2)3–PbZrO3–PbTiO3 Solid Solution Ceramics Near the Morphotropic Phase Boundary

Perovskite‐type xBi(Mg_1/2Ti_1/2)O₃–(0.56 ? x)PbZrO₃–0.44PbTiO₃ (xBMT–PZ–PT) ternary solid solution ceramics were synthesized via a conventional solid‐state reaction method. The phase transition behaviors, dielectric, ferroelectric, and piezoelectric properties were investigated as a function of the BMT content. The X‐ray diffraction analysis showed that the tetragonality of xBMT–PZ–PT was enhanced with increasing the BMT content, and a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was identified approximately in the composition of x = 0.08. In addition, the dielectric diffuseness and frequency dispersion behavior were induced with the addition of BMT and a normal‐relaxor‐diffuse ferroelectric transformation was observed from the PZ‐rich side to the BMT‐rich side. The electrical properties of xBMT–PZ–PT ceramics exhibit obviously compositional dependence. The x = 0.08 composition not only possessed the optimum properties with ε^T₃₃/ε₀ = 1450, Q_m = 69, d₃₃ = 390 pC/N, k_p = 0.46, P_r = 30 μC/cm², E_c = 1.4 kV/mm, T_c = 325°C, and a strain of 0.174% (d₃₃^* = 436 pm/V) under an electric field of 4 kV/mm as a result of the coexistence of two ferroelectric phases near the MPB, but also owned a good thermal‐depolarization behavior with a d₃₃ value of >315 pC/N up to 290°C and a frequency‐insensitive strain behavior.     

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Highly oriented <111> and <110> β‐SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH₃)₃–Si(CH₃)₃) as a precursor. The effects of laser power (P_L), total pressure (P_tot), and deposition temperature (T_dep) on the orientation, microstructure, and deposition rate (R_dep) were investigated. The orientation of the β‐SiC films changed from <111> to random to <110> with increasing P_L and P_tot. The <111>‐, randomly, and <110>‐oriented β‐SiC films exhibited dense, cauliflower‐like, and cone‐like microstructures, respectively. Stacking faults were observed in the <111>‐ and <110>‐oriented films, and aligned parallel to the (111) plane in the <111>‐oriented film, whereas they were perpendicular to the (110) plane in the <110>‐oriented film. The highest R_dep of the <111>‐oriented β‐SiC film was 200 μm/h at P_tot = 200 Pa and T_dep = 1420 K, whereas that of the <110>‐oriented film was 3600 μm/h at P_tot = 600 Pa and T_dep = 1605 K.