Microstructures and Microwave Dielectric Properties of Bi2O3‐Deficient Bi12SiO20 Ceramics

The Microstructure and microwave dielectric properties of Bi₂O₃‐deficient Bi₁₂SiO₂₀ ceramics were investigated. A small amount of unreacted Bi₂O₃ phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi₂O₃ reacted with remnant SiO₂ during cooling to form a Bi₄Si₃O₁₂ secondary phase. The nominal composition of Bi_11.8SiO_19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: ε_r = 39, Q × f = 74 000 GHz, and τ_f = ?14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.     

Ta_2O_5掺杂Bi_2O_3–ZnO–Nb_2O_5陶瓷的晶体结构、结晶化学及介电性能

采用固相反应法制备Bi1.5ZnNb1.5–xTaxO7陶瓷,研究了不同掺杂量Ta2O5对Bi2O3–ZnO–Nb2O5陶瓷相结构、晶体化学特性和介电性能的影响。结果表明:当x≤0.1时,样品均保持单一的立方焦绿石结构(α–BZN)。通过对样品结晶化学计算发现,随着Ta2O5掺杂量的增加,晶格常数a逐渐减小,结晶化学参数键价和AV(O')[A4]增大,AV(O)[A2B2]减小,48f(O)坐标ξ增加。在组成样品晶体结构的多面体中,由6个48f(O)组成的八面体结构(BO6)逐渐变得扭曲,而6个48f(O)和2个8b(O')组成的六面体结构逐渐变得规则,向正立方体结构变化。室温下样品的介电常数和损耗随Ta2O5掺杂量的增加而减小,弛豫度逐渐减小。     

Al2O3陶瓷微波介电性能的研究与进展

近年来随着微波通讯技术与微波集成电路(microwave integrate circuits,MICs)的发展,用于移动通讯、智能运输系统(Intelligent transport system,ITS)、GPS天线的低介电常数低介电损耗的微波介质陶瓷引起了广泛的关注,其中最具代表性的即为Al2O3陶瓷.本文总结了近几年Al2O3陶瓷微波介电性能的研究情况,系统介绍了Al2O3陶瓷微波介电性能的影响因素和目前研究的Al2O3陶瓷体系,希望对于研究Al2O3陶瓷的微波介电性能提供有益的参考,使其在微波通讯等方面得到更广泛的应用.     

Microstructural and Microwave Dielectric Properties of Bi12GeO20 and Bi2O3‐Deficient Bi12GeO20 Ceramics

Bi₁₂GeO₂₀ ceramics sintered at 800°C had dense microstructures, with an average grain size of 1.5 μm, a relative permittivity (ε_r) of 36.97, temperature coefficient of resonance frequency (τ_f) of ?32.803 ppm/°C, and quality factor (Q × f) of 3137 GHz. The Bi_12‐xGeO_20‐1.5x ceramics were well sintered at both 800°C and 825°C, with average grain sizes exceeding 100 μm for x ≤ 1.0. However, the grain size decreased for x > 1.0 because of the Bi₄Ge₃O₁₂ secondary phase that formed at the grain boundaries. Bi_12‐xGeO_20‐1.5x (x ≤ 1.0) ceramics showed increased Q × f values of >10 000 GHz, although the ε_r and τ_f values were similar to those of Bi₁₂GeO₂₀ ceramics. The increased Q × f value resulted from the increased grain size. In particular, the Bi_11.6GeO_19.4 ceramic sintered at 825°C for 3 h showed good microwave dielectric properties of ε_r = 37.81, τ_f = ?33.839 ppm/°C, and Q × f = 14 455 GHz.     

A Novel Low‐Firing and Low Loss Microwave Dielectric Ceramic Li2Mg2W2O9 with Corundum Structure

The crystal structure and microwave dielectric properties of a novel low‐firing compound Li₂Mg₂W₂O₉ were investigated in this study. The phase purity and crystal structure were investigated using X‐ray diffraction analyses and Rietveld refinement. The best microwave dielectric properties of the ceramic with a low permittivity (ε_r) ~11.5, a quality factor (Q × f) ~31 900 GHz (at 10.76 GHz) and a temperature coefficient of the resonant frequency (τ_f) ~ ?66.0 ppm/°C were obtained at the optimum sintering temperature (920°C). CaTiO₃ was added into the Li₂Mg₂W₂O₉ ceramic to obtain a near zero τ_f, and 0.93Li₂Mg₂W₂O₉–0.07CaTiO₃ ceramic exhibited improved microwave dielectric properties with a near‐zero τ_f ~ ?1.3 ppm/°C, a ε_r ~21.6, a high Q_u × f value ~20 657 GHz. The low sintering temperature and favorable microwave dielectric properties make it a promising candidate for LTCC applications.     

Effects of Nb2O5 Doping on the Microwave Dielectric Properties and Microstructures of Bi2Mo2O9 Ceramics

This study investigated the effects of the addition of Nb₂O₅ and sintering temperature on the properties of Bi₂Mo₂O₉ ceramics. The ceramics were sintered in air at temperatures ranging from 620°C to 680°C. The addition of small amounts of Nb₂O₅ as a dopant significantly affected the crystalline phase and the microwave dielectric properties of the Bi₂Mo₂O₉ ceramics. The secondary phase, γ‐Bi₂MoO₆, was observed when Nb₂O₅ was added. However, unlike the Bi₂Mo₂O₉ ceramic without Nb₂O₅ sintered above 645°C, the ceramics with 3 mol% Nb₂O₅ contained no γ‐Bi₂MoO₆ when sintered at 660°C. The Q × f value and τ_f of the Bi₂Mo₂O₉ ceramics were improved by Nb₂O₅ doping. The Bi₂Mo₂O₉ ceramics doped with 2 mol% Nb₂O₅ exhibited the best microwave dielectric properties, with a permittivity of 36.5, a Q × f value (f = resonant frequency, Q = 1/dielectric loss at f) of 14100 GHz and τ_f of +5.5 ppm/°C after sintering at 620°C.     

BaO-Nd2O3-Sm2O3-TiO2四元系微波介质陶瓷

本文研究了Bi2O3、PbO及Sm2O3对BaO-Nd2O3-TiO2(简称BNT)系陶瓷材料微波性能的影响.实验表明,在BNT系材料中掺入Bi2O3或PbO可降低材料的频率温度系数τf,但同时也使材料的tgδ增大.采用Sm取代部分Nd,形成BaO-Nd2O3-Sm2O3-TiO2(简称BNST)四元系陶瓷材料,可有效降低材料的τf,改善频率温度稳定性,而不会降低材料的品质因素Q0.当Sm2O3∶Nd2O3=7∶3(mol比)时,可得到εr=80.80,tgδ=2.92×10-4(2.7GHz测),τf=23.63ppm/℃的高性能BNST四元系微波介质陶瓷材料.     

B2O3-CuO掺杂CSLST微波介质陶瓷介电性能研究

选用B2O3-CuO(BC)低熔点复合氧化物作为烧结助剂,采用固相法制备(Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3(CSLST)陶瓷,研究了不同含量的BC对CSLST陶瓷的晶相组成、烧结性能及微波介电性能的影响.研究结果表明:随BC添加量的增多,CSLST陶瓷的烧结温度降低,陶瓷的微波介电常数εr和谐振频率温度系数(Τ)f下降,品质因素Qf明显降低.当BC添加量为5wt％时,在1000℃保温5h可烧结,此时陶瓷具有较佳的微波介电性能:εr=80.4,Q×f=1380 GHz,(Τ)f=- 32.89×10-6/℃.     

Microwave Dielectric Properties of a Low‐Firing Ba2BiV3O11 Ceramic

A low‐firing microwave dielectric ceramic Ba₂BiV₃O₁₁ was prepared via solid‐state reaction method. Ba₂BiV₃O₁₁ ceramic could be well sintered at 840°C–880°C, with a ε_r ~14.2, a high Q × f value ~68 700 GHz (at 8.7 GHz), and a negative temperature coefficient of ?81 ppm/°C. τ_f of Ba₂BiV₃O₁₁ was tuned to be near zero by formation of a composite with TiO₂. 0.7Ba₂BiV₃O₁₁–0.3TiO₂ ceramic sintered at 910°C showed improved properties with ε_r = 15.7, Q × f = 53 200 GHz, and τ_f  = ?2 ppm/°C.     

Sintering Process and Microwave Dielectric Properties of Bi8TiO14 Ceramics

The formation of a homogeneous Bi₈TiO₁₄ phase was successfully achieved in a specimen calcined at 600°C. However, a Bi₄Ti₃O₁₂ secondary phase also developed in specimens calcined at temperatures higher than 600°C, probably because of Bi₂O₃ evaporation. For specimens sintered above 800°C, a small amount of the Bi₈TiO₁₄ phase melted during sintering, with the liquid phase contributing to the densification of the specimens; however, Bi₄Ti₃O₁₂ and Bi₁₂TiO₂₀ secondary phases were still formed in these specimens. The microwave dielectric properties of the Bi₈TiO₁₄ phase were considerably affected by variations in the microstructure of the specimens. When the sintering temperature exceeded 825°C, the amount of secondary phases increased, and this decreased the density and Q×f values of the specimens. Bi₈TiO₁₄ ceramics sintered at 825°C exhibited promising microwave dielectric properties, with ε_r = 47.4, Q×f = 5370 GHz, and τ_f = ?16.01 ppm/°C.     

Sintering Mechanism and Microwave Dielectric Properties of Bi12TiO20 Ceramics

A homogeneous Bi₁₂TiO₂₀ phase was developed in a specimen that was calcined at 700°C without the formation of a secondary phase. A small amount of the Bi₁₂TiO₂₀ phase melted during sintering and assisted the densification of the specimen. The Bi₂O₃ and Bi₈TiO₁₄ secondary phases were found in all specimens. All the specimens that were sintered at temperatures ≥775°C exhibited high relative densities above 98% of the theoretical density. The Q × f value of the Bi₁₂TiO₂₀ ceramics was influenced by the grain size. The Bi₁₂TiO₂₀ ceramics sintered at 800°C for 5 h showed promising microwave dielectric properties of ε_r = 41, Q × f = 10 400 GHz, and τ_f = ?10.8 ppm/°C.     

Microwave Dielectric Properties of Novel Glass‐Free Low‐Firing Li2CeO3 Ceramics

Novel glass–free low temperature firing microwave dielectric ceramics Li₂CeO₃ with high Q prepared through a conventional solid‐state reaction method had been investigated. All the specimens in this paper have sintering temperature lower than 750°C. XRD studies revealed single cubic phase. The microwave dielectric properties were correlated with the sintering conditions. At 720°C/4 h, Li₂CeO₃ ceramics possessed the excellent microwave dielectric properties of ε_r = 15.8, Q × f = 143 700 (GHz), and τ_f  = ?123 ppm/°C. Li₂CeO₃ ceramics could be excellent candidates for glass‐free low‐temperature co‐fired ceramics substrates.     

CeO2/Ca0.7Bi0.15Na0.15TiO3复合陶瓷微波介电性研究

通过传统固相烧结法制备了(1-x)(Ca0.7Bi0.15Na0.15TiO3)-xCeO2(x=0.6、0.7、0.8、0.9)陶瓷,并对其晶体结构、表面形貌、元素化合价及微波介电性能进行了系统研究.结果 表明:所有组分陶瓷均含有与CaTiO3和CeO2结构相似的两相.在x=0.4中Ce存在两种价态Ce3+和Ce4.两相的存在导致了介电常数和谐振频率温度系数呈现线性变化,品质因数则表现为非线性变化.当x=0.9时,Ca0.7Bi0.5Na0.15TiO3-CeO2复合陶瓷微波介电性能较优,其εr=35.1,Q×f=10889.2 GHz和τf=27 ppm/℃.     

浅谈BaO-Ln2O3-TiO2体系微波介质陶瓷的热稳定性

本文介绍了目前提高BaO-Ln2O3-TiO2体系微波介质陶瓷热稳定性的几种方法,指出了有待解决的主要问题;而加强对陶瓷结构的理论剖析、寻找合适的添加剂、改进制备工艺等是今后研究工作的重点。     

Novel Low‐Firing Microwave Dielectric Ceramic LiCa3MgV3O12 with Low Dielectric Loss

Novel low temperature firing microwave dielectric ceramic LiCa₃MgV₃O₁₂ (LCMV) with garnet structure was fabricated by the conventional solid‐state reaction method. The phase purity, microstructure, and microwave dielectric properties were investigated. The densification temperature for the LCMV ceramic is 900°C. LCMV ceramic possessed ε_r = 10.5, Q_u × f = 74 700 GHz, and τ_f = ?61 ppm/°C. Furthermore, 0.90LiCa₃MgV₃O₁₂–0.10CaTiO₃ ceramic sintered at 925°C for 4 h exhibited good properties of ε_r = 12.4, Q_u × f = 57 600 GHz, and τ_f = 2.7 ppm/°C. The LCMV ceramic could be compatible with Ag electrode, which makes it a promising ceramic for LTCC technology application.     

Dy2O3和La2O3掺杂对BaTiO3铁电陶瓷介电特性的影响

对BaTiO3和BaTiO3-Co2O3系组成进行了Dy2O3和La2O3稀土改性的研究,考察了该系统的介电温度特性和耐电性能,观察了样品的显微结构,讨论了Dy2O3和Dy2O3和La2O3在改变BaTiO3铁电温谱特性的作用,结果表明：Dy2O3和La2O3的掺杂效果存在差异,Dy2O3掺杂明显促进BaTiO3细晶化,而La2O3掺杂呈现出对BaTiO3基介质材料的Curie峰更强的压峰和移峰效应,在BaTiO3-Nb2O5-Co2O3-Dy2O3系统中可获取高介高压特性瓷料,其介电常数≈3000,tgδ＜1．5％,介电温谱符合“X7R”标准,击穿强度可达7－8kV/mm。     

H3BO3对Li2Zn3Ti4O12微波介质陶瓷低温烧结与微波介电性能的影响

采用传统固相反应法制备了添加H3BO3助烧剂的Li2Zn3Ti4O12 (LZT)陶瓷,分别通过XRD、SEM、排水法及网络分析仪等方法研究了不同H3BO3添加量对所得陶瓷的物相、微观形貌、烧结特性与微波介电性能的影响.结果表明在LZT陶瓷中添加3wt% H3BO3可有效降低烧结温度,在900 ℃/2 h烧结条件下可以获得高致密性及优异的微波介电性:ρ=4.15 g/cm3,εr=17.916,Q×f=61200 GHz,Tf=-52.87×10-6/℃.     

Dielectric Properties of Glasses in the Systems Bi2O3-CdO-SiO2, Bi2O3-CdO-B2O3, and Bi2O3-CdO-GeO2 and Their Relation to the Structure of Glass

Areas of glass formation and regions of “neo-ceramic” glasses in the systems Biz03-CdO-Si02, Bi203-Cd0-B203, and Bi203-Cd0-GeO2 are demarcated. Properties of glasses in the neoceramic regions were determined before and after nucleation and heat treatment. There are no maxima or minima in the dielectric properties versus composition curves. The dielectric constants increase after nucleation and heat treatment. The dissipation factors show a remarkable change toward higher values. Transparent glasses with Bi₂O₃. CdO as the predominant constituents have unusual dielectric constants ranging from 30 to 42 and dissipation factors ranging from 3 to 50 × 10⁻⁴., Since these glasses contain only from 0.5 to 2.0 wt% SiO₂ or B₂O₃ or 5 wt% GeO₂, the conventional concept of glass structure composed of a random spacial network of SiO₄ tetrahedra, whose interstices are filled with network modifiers, cannot be sustained in this case. It is suggested that the dominant cations Bi^{3 +} and Cd²⁺ form the network and that the interstices are occupied by Si4 + cations. The function of the Si⁴⁺ ion apparently is to distort the highly polarizable Bi3 + ion enough to form a random network. It appears to be possible that Bi³⁺ and Cd²⁺ can form the network in sixfold coordination. The dielectric losses observed are explained in terms of the relative instability of the structure.     

剑状Bi_2O_3的微波合成及其循环伏安特性

以五水合硝酸铋和乙二醇为原料采用微波辐照法合成了剑状结构的Bi2O3。利用X射线粉末衍射(XRD)、扫描电镜(SEM)和氮气吸附实验对产物进行了表征。循环伏安法测试结果表明,该氧化铋的电化学反应活性很高,在微电极上所作的循环伏安曲线中还原/氧化峰电位、峰电流变化规律等方面有较好的一致性,可以吸附到电极上面改善其性能。     

Core–Shell Structure and Dielectric Properties of Ba0.991Bi0.006TiO3@Nb2O5–Co3O4 Ceramics

To meet the needs of future multilayer ceramic capacitors (MLCCs), thinner dielectric layers are necessary. To achieve this goal, the grain size and uniformity of the particles must be effectively controlled. In this study, we confirmed a core–shell particle structure by means of X‐ray diffraction, scanning electron microscopy, and energy‐dispersive spectroscopy. The dielectric properties of the ceramics were measured using an LCR meter. We found Ba_0.991Bi_0.006TiO₃ particles form a core that was coated with a homogeneous Nb₂O₅–Co₃O₄ layer (~9 nm). The relationship between core–shell structure and ε_r‐T curves of the Ba_0.991Bi_0.006TiO₃@Nb₂O₅–Co₃O₄ ceramics by different sintering temperature has been investigated. Dense, fine‐grained Ba_0.991Bi_0.006TiO@Nb₂O₅–Co₃O₄ ceramics were obtained by sintering at 1160°C. The ceramics met the X8R requirements, with a maximum dielectric constant of 2795, and a low dielectric loss at room temperature of 0.89%.