Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

Temperature dependence and the oscillatory behavior of the opto-electronic properties of a dye-sensitized nanocrystalline TiO2 solar cell

A dye-sensitized TiO₂ solar cell was developed and characterized. The I–V (current–voltage) characteristics were studied at different temperatures from −40°C to 80°C. The opto-electronic properties of the cell depend on factors like ambient temperature and the time constants of the redox processes at the cell interfaces. The temperature dependence of V_oc and I_sc were clearly demonstrated. I_sc increased with increasing temperature above room temperature, where as V_oc increased with decreasing temperature below room temperature. The opto-electronic properties showed oscillatory behavior especially at low temperatures, which may be attributed to the different velocities of the redox processes occurring at the TiO₂/dye, dye/electrolyte and the electrolyte/counter electrode interfaces.     

Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells

The performance of Al_0.36Ga_0.64As p/i/n solar cells with multiple quantum wells (MQW) of GaAs/Al_0.36Ga_0.64As in the i-region has been investigated at various temperatures, ranging from −10°C to 100°C, and compared with that of conventional solar cells composed of either the quantum well material (GaAs) or the barrier material (Al_0.36Ga_0.64As) alone. The dark currents of the MQW cells were found to lie between those of the conventional cells. The increase of dark current with temperature was accompanied by a slight decrease of the diode ideality factor. A linear dependence of open-circuit voltage (V_oc) on temperature was observed for all cells when illuminated with a 100W halogen lamp. V_oc for the MQW cells was found to be independent of the number of wells, lying between the V_oc's for the two conventional cells. The MQW cells exhibited performance improvement with temperature when compared to the conventional cells and there was a significant enhancement in the short-circuit current with temperature of those MQW cells that exhibited poorer performance at lower temperatures. Theoretical calculations have quantified the contribution of the tunneling current component to the total observed photocurrent at the various temperatures examined. It was found that tunneling currents are present at all temperatures and can be the dominant component in MQW cells of thinner wells at low temperatures. These results suggest that GaAs/Al_0.36Ga_0.64As MQW structures, of good-quality material, when processed as conventional solar cells with antireflective coatings should deliver more output power under intense illumination than conventional solar cells composed of the quantum well material alone.     

Microcrystalline silicon thin-film solar cells prepared at low temperature using PECVD

The low-temperature deposition of μc-Si:H has been found to be effective to suppress the formation of oxygen-related donors that cause a reduction in open-circuit voltage (V_oc) due to shunt leakage. We demonstrate the improvement of V_oc by lowering the deposition temperature down to 140°C. A high efficiency of 8.9% was obtained using an Aasahi-U substrate. Furthermore, by optimizing textured structures on ZnO transparent conductive oxide substrates, an efficiency of 9.4% was obtained. In addition, relatively high efficiency of 8.1% was achieved using VHF (60 MHz) plasma at a deposition rate of 12 Å s⁻¹. Thus, this low-temperature deposition technique for μc-Si:H is promising for obtaining both high efficiency and high-rate deposition technique for μc-Si:H solar cells.     

Preparation of Cu(In,Ga)Se2 thin films from Cu–Se/In–Ga–Se precursors for high-efficiency solar cells

Improved preparation process of a device quality Cu(In,Ga)Se₂ (CIGS) thin film was proposed for production of CIGS solar cells. In–Ga–Se layer were deposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu and Se fluxes to form Cu–Se/In–Ga–Se precursor film at substrate temperature of over 200°C. The precursor film was annealed in Se flux at substrate temperature of over 500°C to obtain high-quality CIGS film. The solar cell with a MgF₂/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5% (V_oc=0.634 V, J_sc=36.4 mA/cm², FF=0.756).     

Photoelectrochemical behavior of chemically deposited CdSe and coupled CdS/CdSe semiconductor films

Photoelectrochemical effects at chemically deposited CdSe thin films (2000 Å) coupled with as-prepared and air annealed (250°C) CdS films have been investigated by monitoring open-circuit voltage (V_oc) and short-circuit current density (I_sc) at varying incident light intensities and for different heat-treatments temperatures. Two consecutive chemical baths were used in the coupled system. Each bath has been optimized in earlier studies for the deposition of highly photosensitive CdS and CdSe thin films. The photoelectrochemical behavior of single and coupled films was investigated in ferricyanide redox couples. The enhanced short-circuit photocurrent of the as-deposited CdS/CdSe system, despite their lower photosensitivity, indicated that charge separation improved in the coupled system. The role of post-deposition thermal treatments in improving the photoelectrochemical cell characteristics and stability of coupled semiconductors was investigated. Excellent I–V properties were obtained for CdSe and CdS₂₅₀/CdSe photoelectrodes annealed at 280°C. For the coupled system: V_oc=960 mV; I_sc=8.6 mA/cm²; fill factor (ff)=0.53 and cell efficiency (η)=4.2%. The linearity of V_oc/ln(I_L) and I_sc/I_L plots supports the Schottky–Mott model for these interfaces. The stability of the coupled photoanode is superior to that of the CdSe only-film for the initial 3 h.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.     

Electrical and photovoltaic response of bulk hetero-junction device made from poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′-diallyl substituted 4, 4′-dipyridine (DADP)

Electrical and photovoltaic properties of donor–acceptor composite system comprised of poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′–diallyl substituted 4, 4′-dipyridine (DADP) were investigated. A significant enhancement of photocurrent was observed when PPAT was blended with DADP. The increase in photocurrent has been explained in terms of efficient charge separation that resulted from the transfer of photo-excited electrons from PPAT to DADP. The strong quenching of fluorescence of PPAT was caused by the presence of DADP that indicates the photo-induced charge transfer from PPAT to DADP. The open circuit voltage (V_oc) generated in the device is independent of the variation of work function of negative metal electrode that has been explained in terms of Fermi level pinning between DADP and metal via surface charges. The electrical characteristics of ITO/PPAT: DADP/Al photovoltaic device were determined by analyzing the dependence of short circuit photocurrent density (J_sc) and V_oc under illumination at different temperatures. The V_oc decreases almost linearly with increasing temperature, while short-circuit photocurrent increases logarithmically with temperature and saturates at higher temperature above 330 K. This dependence of J_sc and V_oc on temperature has been discussed in terms of possible mechanism that involves the photovoltage generation and charge carrier transport in the device under thermally activated state. The photovoltaic device made from PPAT: DADP blend has shown three times higher photosensitivity than that of made from pure PPAT.     

Dependence of efficiency on slat angles of microgrooved solar cells

The short circuit current of a monocrystalline silicon solar cell can be enhanced further by suitably modifying the slat angle of its microgroove surface due to reduction in reflection coefficient and increase in optical trapping with decreasing slat angle. In this paper the dependence of I_sc, V_oc and η of a solar cell on the slat angle have been computed taking into account the variation of the reflection coefficient with the slat angle.It is observed that I_sc increases while V_oc decreases significantly with decreasing slat angles leading to a maximum efficiency of about 22% corresponding to a slat angle range lying between 30° and 45° without antireflection coating. However, the efficiency can be increased further to about 25% with AR coating.     

A novel UV-mediated low-temperature sintering of TiO2 for dye-sensitized solar cells

Titania pastes were fired at 450 °C in oxygen to give white titania that was used to prepare dye-sensitized solar cells (DSSC). Titania fired at lower temperature and/or under inert atmosphere have brown stripes and cells made from these stripes had no measurable efficiency. When the titania paste was screen printed and then heated and simultaneously irradiated with UV light, white stripes were obtained. Improved efficiency was noted for PV cells made from pastes heated at lower temperature under irradiation vs. cells made from low-temperature heated paste but without irradiation. UV irradiation appears to facilitate clean oxidation of residual organic materials in the titania precursor pastes. The best cells in our study made with our titania paste treated at 450 °C in oxygen had the following characteristics: efficiency=3.45%; V_oc=630 mV; J_sc=8.5 mA/cm²; and a fill factor=0.64.     

Poly-Si thin films by metal-induced growth for photovoltaic applications

Poly-Si films were produced using a metal-induced growth technique by sputtering from an n-type Si target onto a 50 nm thick Co seed-layer at 625°C. Silicon grew heteroepitaxially on the CoSi₂ layer formed due to the reaction between the sputtered Si atoms and Co at the beginning stage of deposition. A 5 μm thick Si film with grain features up to 1 μm was produced on the thin and flexible tungsten substrate by using a two-step sputtering method. The films also have a natural texture structure on the surface that is strongly recommended in thin-film solar cells in order to obtain high current density by increasing incident light trapping. After post-sputtering annealing at 700°C, the measured minority carrier lifetime for poly-Si film was 1.33 μs which shows the film to be suitable for photovoltaic applications. To explore the photovoltaic applications by using MIG poly-Si films, Au/n-Si Schottky photodiodes were fabricated due to the process simplicity. The effects of different parameters, which include film doping density, active-layer thickness, Si film surface conditions and hydrogenation, were studied. It was found that with the increasing of doping density, the open-circuit voltage (V_oc) increased while short-circuit current density (J_sc) decreased. Increasing the poly-Si active-layer thickness tended to improve the light absorption with an increased J_sc, but the V_oc was decreased due to a higher value of reverse saturation current. Because the metal/semiconductor interface condition facilitates the carrier transport in Schottky devices, the earlier study of modifying the Si surface by polishing showed an improved V_oc. The overall photo response was further improved by plasma hydrogenation.     

Radiation effects on fabricated Cu2S/CdS heterojunction photovoltaic cells

The photovoltaic properties including I–V characteristics, junction capacitance (C–V), short-circuit current (I_sc), open-circuit voltage (V_oc), fill factor (ff), efficiency (η), and spectral response of Cu₂S/CdS heterojunction cells have been examined before and after exposure to nuclear radiation. This included γ-rays of Co-60, and electron beams (at 1.5 MeV energy).The short-circuit current (I_sc) decreased, while the open-circuit voltage (V_oc), the fill factor (ff) and the efficiency (η) increased after heat treatment (at 260°C in air for 20 min). The I_sc effect during exposure to γ-rays was studied. It was found that I_sc increases as the dose rate increases. The sensitivity dependence of the I_sc density on dose rate was observed to be linear, and hence a universal constant for its sensitivity is found to be 45 (nA/cm²) (rad/s).No permanent damage was shown until about 300 Mrad for γ rays and 380 Mrad for electron beams. After these doses, the I_sc and V_oc slightly decreased on increasing the absorbed dose.After heat treatment, the spectral response was modulated. It was found that the wavelength response against the photocurrent decreased from 1000 to 800 nm and the photocurrent also slightly decreased in the range of wavelengths from 800 to 450 nm and increased from 350 to 540 nm. Heat treatment before irradiation improved the photovoltaic cells. After irradiation by γ-rays and electron beams, the photocurrent went back to its original value by annealing (for 2 h at 500°C). The capacitance–voltage behavior decreased after irradiation and hence the doping decreased.     

Influence of electrolytes on the photovoltaic performance of organic dye-sensitized nanocrystalline TiO2 solar cells

We have studied the influence of electrolytes on the photovoltaic performance of mercurochrome-sensitized nanocrystalline TiO₂ solar cells using LiI, LiBr, and tetraalkylammonium iodides as the electrolyte. Short-circuit photocurrent density (J_sc) and open-circuit photovoltage (V_oc) depended strongly on the electrolyte. J_sc of 3.42 mA cm⁻² and V_oc of 0.52 V were obtained for the LiI electrolyte and J_sc of 2.10 mA cm⁻² and V_oc of 0.86 V were obtained for the Pr₄NI electrolyte. This difference in photovoltaic performance was due to the change in the conduction band level of the TiO₂ electrode. Large V_oc of 0.99 V was obtained for the LiBr electrolyte due to the large energy gap between the conduction band level of TiO₂ and the Br/Br₂ redox potential. Solar cell performance also depended strongly on organic solvent, suggesting that the physical properties of solvents such as Li ion conductivity and donor number affect photovoltaic performance.     

Solar cell junction temperature measurement of PV module

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module V_oc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80 °C) and solar irradiation S (200-1000 W/m²), the correlation between the open-circuit voltage V_oc , the junction temperature T_j , and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured V_oc and S at a short time instant with open circuit. The junction temperature T_j is then determined using the measured S and V_oc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, T_jo, is more accurate. The maximum error using the average surface temperature T_ave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation.     

Performance of the dye‐sensitized solar cells fabricated using natural dyes from Ixora coccinea flowers and Cymbopogon schoenanthus leaves as sensitizers

In this study, the chlorophyll and anthocyanin natural dyes were extracted from Cymbopogon schoenanthus leaves and Ixora coccinea flowers, respectively. Thereafter, these dyes were used as sensitizers in the TiO₂‐based dye‐sensitized solar cells (DSSCs). Ten solvents were used for solubilizing the dyes. Amongst the 10 solvents, the ethanol showed the highest absorption spectra for the anthocyanin and chlorophyll molecules. Temperature significantly affected the yield of the natural dyes. It was seen that an optimal extraction temperature of 70°C and 80°C results to higher anthocyanin and chlorophyll yields, respectively. However, an extraction temperature above 70°C and 80°C has shown a sharply decrease in the anthocyanin and chlorophyll concentrations, respectively. Also, the solution of acidic extraction, especially with a pH value of 4, increased the dyes concentrations. As seen in the results, the chlorophyll‐sensitized DSSCs had 0.23% conversion efficiency (?), short‐circuit current (I_sc) of 0.9 mA/cm^–2, open‐circuit voltage (V_oc) of 0.51 V, and 49.13% fill factor (FF). Meanwhile, the anthocyanin‐sensitized DSSCs showed 0.16% ?, 0.4 mA/cm^–2 I_sc, 0.53 V V_oc, and 75.93% FF.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE

The purpose of our work was the evaluation of GaSb/GaAs heterostructures grown on GaAs substrates for thermophotovoltaics (TPV). Heterojunctions p-GaSb/n-GaAs with p-layer prepared by metal organic vapour phase epitaxy (MOVPE) method at growth temperatures ranging from 500°C to 560°C were investigated. We have studied the charge transport in these structures and its influence on photovoltage spectral response of the cells. Measurement of I–V characteristics in the temperature range from 200 to 350 K show that the charge transport can be described by a combination of emission and diffusion processes. There is a spike and hence a discontinuity in the band diagram of the junction. The discontinuity increases with increasing GaSb growth temperature. Photovoltage spectral response shows higher signal from GaAs than that from GaSb. The experimental curves were compared with theoretically calculated ones accounting for the reduction of electron current crossing the barrier. The discontinuity is very probably connected with the lattice mismatch between both materials rather than with the affinity difference. Our results show that p-GaSb/n-GaAs heterojunctions prepared by this MOVPE method are not suitable enough for use in TPV.     

Ribbon Si solar cells with efficiencies over 18% by hydrogenation of defects

We have fabricated 4 cm² solar cells on String Ribbon Si wafers and edge-defined film-fed grown (EFG) Si wafers with using a combination of laboratory and industrial processes. The highest efficiency on String Ribbon Si wafer is 17.8% with an open circuit voltage (V_oc) of 620 mV, a short circuit current density (J_sc) of 36.8 mA/cm² and a fill factor (FF) of 0.78. The maximum efficiency on EFG Si is 18.2% with a V_oc of 620 mV, a J_sc of 37.5 mA/cm² and a FF of 0.78. These are the most efficient ribbon Si devices made to date, demonstrating the high quality of the processed Si ribbon and its potential for industrial cells. Co-firing of SiN_x and Al by rapid thermal processing was used to boost the minority carrier lifetime of bulk Si from 3–5 μs to 70–100 μs. Photolithography-defined front contacts were used to achieve low shading losses and low contact resistance with a good blue response. The effects of firing temperature and time were studied to understand the trade-off between hydrogen retention and Al-doped back surface field (Al-BSF) formation. Excellent bulk defect hydrogenation and high-quality thick Al-BSF formation was achieved in a very short time (1 s) at firing temperatures of 740–750 °C. It was found that the bulk lifetime decreases at annealing temperatures above 750 °C or annealing time above 1 s due to dissociation of hydrogenated defects.