A 2-V 10.7-MHz CMOS limiting amplifier/RSSI

This paper presents low-voltage low-power CMOS circuit design techniques for an intermediate frequency (IF) limiting amplifier and received signal strength indicator (RSSI). The architecture of the limiting amplifier and RSSI employed is determined by the optimal power consumption for a specified speed, overall gain, and accuracy. Each gain cell of the limiting amplifier employs folded diode load for low-voltage operation. Offset is reduced by a cross-connected source-coupled pair offset subtractor that is along the signal path. Full-wave current rectification and summation are employed in the RSSI circuit to achieve high precision while maintaining low voltage and low power. Using a single 2-V supply voltage, measured results demonstrate the input dynamic range is larger than 75 dB for 10.7-MHz IF application. The prototype occupies an active area of 0.4 mm² using a 0.6-μm digital CMOS technology. The power dissipation is 6.2 mW     

A high-swing 2-V CMOS operational amplifier with replica-amp gainenhancement

A general gain-enhancement technique for operational amplifiers using a replica amplifier is described. Unlike conventional techniques such as cascoding, which increases the gain by increasing the output resistance, the replica-amp technique increase the gain by matching the main and the replica amps. Among the advantages of the replica-amp technique are low supply, high swing, and effectiveness with resistive loads. This technique has been demonstrated in a 1.2-μm CMOS two-stage op amp. Operating from ±1-V supplies, the op amp has an effective open-loop dc gain of greater than 10 000, while maintaining a high swing of 100 mV from either supply rails. The gain-enhancement circuit is shown to have only a small effect on the settling time experimentally, analytically, and in SPICE simulation     

低功耗CMOS限幅放大器设计

利用0.18μm CMOS工艺设计了应用于光接收机中的10Gb/s限幅放大器.此限幅放大器由输入缓冲,4级放大单元,一级用于驱动50Ω传输线的输出缓冲和失调电压补偿回路构成.输入动态范围为38dB(10mV～800mV),负载上的输出限幅在400mV,在3.3V电源电压下,功耗仅为99mW.整个芯片面积为0.8×1.3mm2.     

A 1.5-V, 1.5-GHz CMOS low noise amplifier

A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-μm CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices     

1V高线性度2.4GHz CMOS低噪声放大器

讨论了低噪声放大器(LNA)在低电压、低功耗条件下的噪声优化及线性度提高技术.使用Chartered 0.25μm RF CMOS 工艺设计一个低电压折叠式共源共栅LNA.后仿真结果表明在1V电源下,2.36GHz处的噪声系数NF仅有1.32dB,正向增益S21为14.27dB,反射参数S11、S12、S22分别为 -20.65dB、-30.27dB、-24dB,1dB压缩点为-13.0dBm,三阶交调点IIP3为-0.06dBm,消耗的电流为8.19mA.     

A 0.6-V subthreshold-leakage suppressed fully differential CMOS switched-capacitor amplifier

A 0.6-V subthreshold-leakage suppressed fully differential CMOS switched-capacitor amplifier using Analog T-switch scheme in a standard 0.18 μm CMOS technology is presented. The circuit design of major building blocks is described. The performance of this circuit is demonstrated by experimental results. The experimental results confirm the capability of Analog T-switch scheme to fulfill circuit requirements.     

A 0.9-V 0.5-μA rail-to-rail CMOS operational amplifier

A 0.9-V 0.5-μA, rail-to-rail CMOS operational amplifier designed with weak inversion techniques is presented. Depletion-mode nMOS transistors buffer a bulk-driven pMOS differential pair to realize wide input dynamic range, while the output stage architecture provides symmetric rail-to-rail output drive through the use of a low-voltage translinear control circuit     

A 2-V 7.2° jitter AM-suppression CMOS amplifier usingcurrent-mode hybrid magnitude control

This paper proposes an AM-suppression CMOS amplifier that incorporates a discrete-level automatic gain control (AGC) with a hysteresis hard limiter in order to reduce magnitude dependent jitter and speed up AM-suppression response. The gain control that is composed of a transition-based magnitude controller and a discrete-level current-mode variable gain amplifier (VGA) does not require coherent detection and external components. The prototype amplifier demonstrates a jitter of 7.2° from 1-Mb/s pulse-point modulated (PPM) data input with 20-dB dynamic range (40-400 mV_pp), which is six times improvement over the conventional limiter alone approach. The amplifier with an active area of 0.64 mm² is implemented in 0.8-μm single-poly double-metal digital CMOS technology. It consumes 18 mW from a single 2-V supply     

A 16-b 160-kHz CMOS A/D converter using sigma-delta modulation

The design and measured performance of a third-order sigma-delta analog-to-digital (A/D) converter sampling at 10.24 MHz that achieves a 91-dB signal-to-noise-plus-distortion ratio (RMS/RMS) with a 160-kHz output rate are discussed. The converter consists of three cascaded first-order sigma-delta modulators and a fourth-order comb decimation filter. A special autozeroed integrator having low pole error is required to achieve the 10.24-MHz sampling rate and high S/N. The modulator is implemented with fully differential switched-capacitor circuits and is manufactured using a 1.5-μm double-metal double-poly CMOS process     

A 2-V CMOS cellular transceiver front-end

This work presents the design and implementation of a 2-V cellular transceiver front-end in a standard 0.25-μm CMOS technology. The prototype integrates a low-IF receiver (low noise amplifier, I/Q mixers, and VGAs) and a direct-upconversion transmitter (I/Q mixers and pre-amplifier) on a single die together with a complete phase-locked loop, including a 64/79 prescaler, a fully integrated loop filter, and a quadrature voltage controlled oscillator with on-chip inductors. Design trade-offs have been made over the boundaries of the different building blocks to optimize the overall system performance. All building blocks feature circuit topologies that enable comfortable operation at low voltage. As a result, the IC operates from a power supply of only 2 V, while consuming 191 mW in receiver (RX) mode and 160 mW in transmitter (TX) mode. To build a complete transceiver system for 1,8-GHz cellular communication, only an antenna, an antenna filter, a power amplifier, and a digital baseband chip must be added to the analog front-end. This work shows the potential of achieving the analog performance required for the class I/II DCS-1800 cellular system in a standard 0.25-μm CMOS technology, without tuning or trimming     

A 2.7-V 300-MS/s track-and-hold amplifier

A fully differential bipolar track-and-hold amplifier (THA) employs an open-loop linearization technique compatible with low supply voltage. A feedthrough reduction method utilizes the junction capacitance of a replica switch to provide a close match to the junction capacitance of the main switch. The differential full-scale (FS) input range is 0.5 V. In the track mode, with f_in=10 MHz, FS sinewave input, the measured total harmonic distortion (THD) is less than -72 dB. With f_s=300 MS/s and f_in=10-50 MHz, FS sinewave input, the measured THD is less than -65 dB. This THD measurement reflects the held values as well as the tracking components of the output waveform. With f_s<10 MS/s and f_in=10-50 MHz, FS sinewave input, the measured feedthrough is less than -60 dB. The hold capacitance is 2.5 pF and the differential droop rate is 16 mV/μs. The THA consumes 32 mW from a 2.7-V power supply and is fabricated in a 0.5-μm, 18-GHz BiCMOS process     

A limiting amplifier with low phase deviation using an AlGaAs/GaAsHBT

The design and performance of an AlGaAs/GaAs HBT limiting amplifier are presented. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with an emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3° over a 15-dB input dynamic range     

A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18-/spl mu/m CMOS

A low-noise amplifier (LNA) uses low-loss monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor (FET). A differential implementation in 0.18-/spl mu/m CMOS technology, designed for 5-GHz wireless local-area networks (LANs), achieves a measured power gain of 14.2 dB, noise figure (NF, 50 /spl Omega/) of 0.9 dB, and third-order input intercept point (IIP3) of +0.9 dBm at 5.75 GHz, while consuming 16 mW from a 1-V supply. The feedback design is benchmarked to a 5.75-GHz cascode LNA fabricated in the same technology that realizes 14.1-dB gain, 1.8-dB NF, and IIP3 of +4.2 dBm, while dissipating 21.6 mW at 1.8 V.     

一种3.3 V 2-GHz CMOS低噪声放大器

介绍了一个针对无线通讯应用的2-GHz低噪声放大器(LNA)的设计。该电路采用标准的0.6μm CMOS工艺，电源电压为3．3V，设计中使用了多个片上电感。对低噪声放大器的噪声进行了分析，模拟结果显示，该电路能提供18dB的正向增益(S21)及良好的反向隔离性能(S12为-44dB)，功耗为33．94mW，噪声系数为2．3dB，IIP3为-4．9dBm。     

A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers

A CMOS limiting amplifier with a bandwidth of 3 GHz, a gain of 32 dB, and a noise figure of 16 dB is described. The amplifier is fabricated in a standard 2.5-V 0.25-μm CMOS technology and consumes 53 mW. Inversely scaled amplifier stages and active inductors with a low voltage drop are used to achieve this performance. The amplifier is targeted for use in 2.5-Gb/s (OC-48) SONET systems     

622 Mbit/s光接收模块CMOS限幅放大器前端设计

文章采用0.25 μm互补型金属氧化物半导体( CMOS)工艺设计了一种622 Mbit/s速率光接收模块的限幅放大器,整个系统包括偏置电路、输入缓冲、三级放大、输出缓冲和直流反馈,采用全差分结构.利用3.3 V电源供电,功耗约为109 mW,电路增益可达97 dB,在46 dB的输入动态范围内可以保持790 mV的恒定输出摆幅.     

A CMOS TV tuner/demodulator IC with digital image rejection

Superheterodyne TV tuners have been implemented in discrete forms using tunable RF and SAW IF filters. Integrating TV tuners in CMOS technology without them is a challenging task to cope with technical issues such as harmonic mixing and image. The image rejection in low- or zero-IF systems has been limited to 30-40 dB by analog imperfections such as I/Q path gain and phase mismatches. A single-chip low-IF TV tuner solution is proposed so that the image can be suppressed digitally using an image cancellation technique based on a complex one-tap LMS signal decorrelation algorithm. Programmable digital filtering and video/sound demodulation make a multistandard TV tuner feasible in the 48-860 MHz VHF/UHF band. The chip has a maximum gain of 63 dB and an input automatic gain control (AGC) range from -15 to 25 dB with 0.85-dB steps. It achieves an image and IF rejection of 60 dB, a peak carrier-to-noise ratio (CNR) of 55 dB, and a peak sound signal-to-noise ratio (SNR) of 44 dB without frequency modulation (FM) de-emphasis. The prototype occupies 6/spl times/6 mm/sup 2/ in 0.25-/spl mu/m CMOS and consumes 1 W at 2.5 V.     

A 2.7-V CMOS single-chip baseband processor for CT2/CT2+ cordlesstelephones

A low-voltage, low-power CMOS single-chip baseband processor for CT2 and CT2+ cordless telephones is presented. The chip integrates a complete voiceband codec, a tone generator, a G721 adaptive differential pulse code modulation coder/decoder, a burst-mode logic controller for CT2/CT2+ framings, and an I/Q baseband signal generator. The only external components are made of two quartz crystals. The chip is interfaced with standard microcontrollers through a parallel interface. With a 2.7 V minimum supply, it consumes normal and standby powers of 35 mW and 25 μW, respectively. Maximum supply is 5.5 V, and temperature range is from -40 to 70°C. Chip area (including scribe line) is 55.5 mm² in a 0.8 μm N-well double-metal single-poly CMOS process with implanted capacitors     

A 16-b 320-kHz CMOS A/D converter using two-stage third-orderΣΔ noise shaping

The design and measured performance of a two-stage third-order ΣΔ (sigma-delta) analog-to-digital (A/D) converter is described. The A/D converter achieves a 96-dB dynamic range and a maximum signal-to-noise-plus-distortion ratio (S/(N+ D)) r.m.s./r.m.s. of 93 dB with 320-kHz output rate and an oversampling ratio of 64. An analysis of the integrator gain error is presented. The modulator is realized in a 1.2-μm double-metal single-poly CMOS process with an active area of 1.6 mm². This modulator operates from a 5-V power supply and a single reference voltage     

A 1-V CMOS switched-opamp switched-capacitor pseudo-2-path filter

A modified switched-opamp technique is proposed to enable switched-capacitor (SC) circuits to operate at 1 V with the opamp fully functional in all phases. A 1-V fully differential two-switchable-output-pair operational amplifier has been designed for the proposed technique, which is then employed in a 1-V fully differential SC pseudo-2-path filter. Implemented in a standard single-poly triple-metal 0.5-μm CMOS process, the filter achieves a sixth-order bandpass response centered at 75 kHz with a quality factor of 45. Capacitors formed with polysilicon and highly doped n-well (cap-well option) regions are used to achieve both good linearity and small chip area. At 1-V supply, the filter obtains an output swing of 1.2 V_pp and a dynamic range of 51 db while dissipating 310 μW and occupying a chip area of 0.8 mm²