首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 156 毫秒
1.
文中设计了一款10 bit 250 MS/s的电流舵数模转换器(DAC),通过在DAC中引入阻抗增强型共源共栅电流源结构来提升DAC静态性能。整体电路采用了分段式电流舵结构,高6位为温度计码,低4位为二进制码。基于SMIC 28 nm CMOS工艺,对所设计的DAC进行了仿真验证,结果表明,在0.9 V电源电压下,DAC的积分非线性误差和微分非线性误差的最大绝对值分别为0.06 LSB和0.01 LSB;在输入频率为1.087 5 MHz,采样速率38.4 MS/s时,DAC的无杂散动态范围为65.3 dB;与传统相同性能的电流舵DAC相比,电流源单元的面积减少了约75%。  相似文献   

2.
张帅  张润曦  石春琦 《微电子学》2020,50(4):465-469
采用55 nm CMOS工艺,设计了一个12位电流舵DAC。根据Matlab建模结果,确定电流舵DAC采用“6+3+3”的分段结构,这种分段结构使得版图面积和微分非线性(DNL)均较小;共源共栅电流源有效提高了电流源的输出阻抗;开关结构中的MOS电容减小了信号馈通效应的影响;与电流源栅端相连的电容稳定了电流源的偏置电压。基于以上特点,在未采用静态和动态校准技术的情况下,电流舵DAC能得到较好的性能指标。后仿真结果表明,采样率为200 MS/s、输入信号频率为1.07 MHz时,在25 ℃、TT工艺角下,该DAC的无杂散动态范围(SFDR)为78.62 dB,DNL为0.5 LSB,积分非线性(INL)为0.8 LSB。该电流舵DAC的电源电压为1.2 V,功耗为18.43 mW,FOM为13.22 fJ。  相似文献   

3.
基于GSMC 0.18μm CMOS工艺,采用曲率补偿带隙参考电压源和中心对称Q2随机游动对策拓扑方式的NMOS电流源阵列版图布局,实现了一种10 bit 100 MS/s分段温度计译码CMOS电流舵D/A转换器.当电源电压为1.8 V时,D/A转换器的功耗为10 mW,微分非线性误差和积分非线性误差分别为1 LSB和0.5 LSB.在取样速率为100 MS/s,输出频率为5 MHz条件下,SFDR为70 dB,10 bit D/A转换器的有效版图面积为0.2 mm2,符合SOC的嵌入式设计要求.  相似文献   

4.
采用低摆幅低交叉点的高速CMOS电流开关驱动器结构和中心对称Q2随机游动对策拓扑方式的pMOS电流源阵列版图布局方式,基于TSMC 0.18靘 CMOS工艺实现了一种1.8V 10位120MS/s分段温度计译码电流舵CMOS电流舵D/A转换器IP核.当电源电压为1.8V时,D/A转换器的微分非线性误差和积分非线性误差分别为0.25LSB和0.45LSB,当采样频率为120MHz,输出频率为24.225MHz时的SFDR为64.9dB.10位D/A转换器的有效版图面积为0.43mm×0.52mm,符合SOC的嵌入式设计要求.  相似文献   

5.
采用低摆幅低交叉点的高速CMOS电流开关驱动器结构和中心对称Q2随机游动对策拓扑方式的pMOS电流源阵列版图布局方式,基于TSMC 0.18靘 CMOS工艺实现了一种1.8V 10位120MS/s分段温度计译码电流舵CMOS电流舵D/A转换器IP核.当电源电压为1.8V时,D/A转换器的微分非线性误差和积分非线性误差分别为0.25LSB和0.45LSB,当采样频率为120MHz,输出频率为24.225MHz时的SFDR为64.9dB.10位D/A转换器的有效版图面积为0.43mm×0.52mm,符合SOC的嵌入式设计要求.  相似文献   

6.
电流舵型数模转换器(DAC)广泛应用于通信系统。采用电流分叉结构的电流舵型DAC可以极大地减小电流源阵列的面积。提出一种可以应用于采用电流分叉结构的电流舵型DAC的数字校准技术。提出的后台校准技术可以同时消除高位电流源阵列和低位电流源阵列的失配误差。基于0.18μm CMOS工艺,设计并流片了一款14bit 200MS/s电流舵型DAC,经过数字校准后,无杂散动态范围(SFDR)能够提高至少24dB。在时钟频率为200MS/s,输出信号为2MHz时,SFDR能够达到80dB以上。芯片面积为1.26mm2,功耗为125mW。  相似文献   

7.
电流舵型数模转换器(DAC)广泛应用于通信系统。采用电流分叉结构的电流舵型DAC可以极大地减小电流源阵列的面积。提出一种可以应用于采用电流分叉结构的电流舵型DAC的数字校准技术。提出的后台校准技术可以同时消除高位电流源阵列和低位电流源阵列的失配误差。基于0.18μm CMOS工艺,设计并流片了一款14bit 200MS/s电流舵型DAC,经过数字校准后,无杂散动态范围(SFDR)能够提高至少24dB。在时钟频率为200MS/s,输出信号为2MHz时,SFDR能够达到80dB以上。芯片面积为1.26mm2,功耗为125mW。  相似文献   

8.
提出了一种用于电流舵DAC的开关顺序优化技术。首先,将高位电流源阵列拆分成四个部分并位于四个象限中,在每个象限中采用开关顺序优化技术消除电流源阵列由PVT变化而带来的二阶梯度幅值误差;其次,对开关顺序优化后的电流源阵列根据幅值变化进行排序并重组,形成最终的电流源及开关顺序,消除了一阶梯度幅值误差和其他残余误差。与常规开关顺序优化技术相比,该技术能更有效地降低幅值误差,提高了DAC的静态性能。为了验证提出的开关顺序优化技术,基于40 nm CMOS工艺制作了一个12位200 MS/s采样频率的电流舵DAC。测试结果表明,实施开关顺序优化技术的DAC的INL、DNL分别从0.63 LSB、0.37 LSB降低到0.54 LSB、0.25 LSB。  相似文献   

9.
提出了一种基于电流舵DAC的SDR校正技术。首先采用拆分电流源的方法,增加了待校正电流源的个数。然后采用动态组合的方式,减小了电流源的失配误差,提高了DAC的静态与动态性能。与DMM校正技术相比,该SDR校正技术具有更小的残余误差、更好的静态与动态性能。采用40 nm CMOS工艺实现了一种14位200 MS/s的电流舵DAC,并进行了仿真。结果表明,通过数字校正,该DAC的INL与DNL分别从1.5 LSB和0.5 LSB降低到0.33 LSB和0.25 LSB,SFDR在整个Nyquist带宽内均大于70 dB。  相似文献   

10.
设计了一种基于混合编码DAC的低功耗SAR ADC .其分段电容DAC采用混合编码,减小了短时脉冲波形干扰的影响;为降低DAC寄生效应和电容阵列失配误差的影响,在DAC和比较器的版图设计中考虑了一些匹配技术.采用GF(Global Foundry)0.35μm CMOS工艺流片验证,该ADC在500 KSPS的速度下其INL在-0.6~0.4 LSB区间范围内,DNL在-0.2~0.7 LSB区间范围内,SNDR为54.13 dB ,有效位为8.7位.整个电路的功耗为537.9μW .  相似文献   

11.
本文设计了用于14bit逐次逼近型模数转换器(SAR ADC)的DAC电路。针对该DAC,介绍一种全差分分段电容阵列结构以缩小DAC的版图面积;高二位权电容采用热码控制,用以改善高位电容在转换时跳变的尖峰以及DAC的单调性;对电容阵列采用数字校准技术,减小电容阵列存在的失配,以提高SAR ADC精度。校准前,SAR ADC的INL达到10LSB,DNL达到4LSB;与校准前相比,校准后,INL〈0.5LSB,DNL〈0.6LSB。仿真结果表明,本DAC设计极大改善SAR ADC的性能,已达到设计要求。  相似文献   

12.
A low-voltage 10-bit digital-to-analog converter (DAC) for static/dc operation is fabricated in a standard 0.18-/spl mu/m CMOS process. The DAC is optimized for large integrated circuit systems where possibly dozens of such DAC would be employed for the purpose of digitally controlled analog circuit calibration. The DAC occupies 110 /spl mu/m/spl times/94 /spl mu/m die area. A segmented R-2R architecture is used for the DAC core in order to maximize matching accuracy for a minimal use of die area. A pseudocommon centroid layout is introduced to overcome the layout restrictions of conventional common centroid techniques. A linear current mirror is proposed in order to achieve linear output current with reduced voltage headroom. The measured differential nonlinearity by integral nonlinearity (DNL/INL) is better than 0.7/0.75 LSB and 0.8/2 LSB for 1.8-V and 1.4-V power supplies, respectively. The DAC remains monotonic (|DNL|<1 LSB) as INL reaches 4 LSB down to 1.3-V operation. The DAC consumes 2.2 mA of current at all supply voltage settings.  相似文献   

13.
A VLSI circuit has been developed that combines dual-ported RAMs and three high-speed 8-b digital-to-analog converters (DACs). It is known as a palette/DAC. A 6-2 segmented DAC architecture improves differential linearity and monotonicity. The current-source cell uses a cascode device to improve the DAC's linearity. A reference current, set by an on-chip bandgap reference voltage generator, and its associated distribution scheme eliminate the negative effects of threshold mismatches between current source cells, supply line resistance, and noise. The maximum conversion rate is 70 MHz with typical DC differential nonlinearity of 0.48 LSB (least significant bit). The 253-mil/SUP 2/ is designed on a double-metal CMOS process and consumes 1.2 W of power.  相似文献   

14.
针对GSM标准无线发射系统中数模转换器(DAC)的要求,分析了影响其性能和功耗的限制因素,并在SMIC 0·13μm CMOS工艺1.2 V电源电压下设计了一款10位电流驱动型数模转换器(Current-steering DAC).使用最佳拟合线的算法衡量电流源匹配的随机误差对DAC静态非线性的影响,使得DAC的电流源...  相似文献   

15.
针对OFDM-UWB标准超宽带收发系统中数模转换器(DAC)的要求,设计了一款8位650MHz采样速率电流驱动型数模转换器(Current-steering DAC)。为了提高静态性能,本设计通过蒙特卡洛分析确定电流源最佳尺寸并采用双中心版图技术;为了提高动态性能,文中采用共源共栅电流源结构,对开关电压降摆幅处理并在数字输入端前加入插值滤波器。测试结果表明,DAC的积分非线性(INL)和差分非线性(DNL)分别为0.3LSB和0.41LSB,650MHz转换速率下带内奈奎斯特无杂散动态范围(SFDR)为41dB。整体面积为1.8cm×1.3cm,其中DAC面积为0.8cm×0.8cm。  相似文献   

16.
A 10-b current steering CMOS digital-to-analog converter (DAC) is described, with optimized performance for frequency domain applications. For sampling frequencies up to 200 MSample/s, the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist. For sampling frequencies up to 400 MSample/s, the SFDR is better than 55 dB for signals from DC to Nyquist. The measured differential nonlinearity and integral nonlinearity are 0.1 least significant bit (LSB) and 0.2 LSB, respectively. The circuit is fabricated in a 0.35-μm, single-poly, four-metal, 3.3 V, standard digital CMOS process and occupies 0.6 mm2. When operating at 500 MSample/s, it dissipates 125 mW from a 3.3 V power supply. This DAC is optimized for embedded applications with large amounts of digital circuitry  相似文献   

17.
Lee  K.-H. Kim  Y.-J. Kim  K.-S. Lee  S.-H. 《Electronics letters》2009,45(21):1067-1069
Described is a 14 bit 50 MS/s CMOS four-stage pipeline A/D converter (ADC)-based on a digital code-error calibration. The proposed calibration technique measures the capacitor mismatch errors of the front-end multiplying DAC (MDAC) with the back-end pipeline stages while the measured code errors are stored in memory and corrected in the digital domain during normal conversion. The calibration needs the increased power dissipation and chip area of 1.4 and 10.7 , respectively, compared to a 14 bit uncalibrated conventional pipeline ADC. The prototype ADC fabricated in a 0.18 um CMOS process occupies an active die area of 4.2 mm2 and consumes 140 mW at 1.8 V and 50 MS/s. After calibration, the measured DNL and INL of the ADC are improved from 0.69 to 0.39 LSB and from 33.60 to 2.76 LSB, respectively.  相似文献   

18.
This paper describes a new Built-In-Self-Test(BIST) scheme for estimation of static non-linearity errors in segmented and binary weighted digital to analog converters (DACs). The BIST scheme comprises of a hierarchy of tests including tests for non-monotonicity, checks to detect if the DNL/INL errors exceed ±0.5 LSB and actual estimation of the DNL/INL. The BIST scheme has been experimentally verified on 10-bit segmented current steering DAC. The DAC, along with the additional circuits required for testing, was designed and fabricated using a 0.35 m process. Both simulation and experimental results are included in this paper. Errors estimated using the BIST scheme match well with measurements done on the fabricated device.  相似文献   

19.
一种电流自校准14位、50Msample/s CMOS DAC   总被引:1,自引:1,他引:1  
朱臻  洪志良  黄秋庭 《电子学报》2003,31(2):306-308
文章介绍一种14位、50Msample/s的电流驱动型CMOS DAC.该电路的核心由31个温度计编码的高5位电流源、15个温度计编码的中间4位电流源和5个二进制编码的低5位电流源构成.为了达到更高的静态线性度,一种新颖的电流自校准技术被提出,用来对最高5位的电流源进行自校准.这种自校准完全是在后台操作的,并不需要一个替代电流源去替代正在被校准的那一路电流源.该芯片采用0.25μm标准CMOS工艺制造,芯片面积为3.54mm2.测试结果显示芯片的静态分辨率达到12位.  相似文献   

20.
设计了一个14位刷新频率达400MHz,用于高速频率合成器的低功耗嵌入式数模转换器。该数模转换器采用5+4+5分段式编码结构,其电流源控制开关输出驱动级采用归零编码以提高DAC动态特性。该数模转换器核采用0.18μm1P6M混合信号CMOS工艺实现,整个模块面积仅为1.1mm×0.87mm。测试结果表明,该DAC模块的微分非线性误差是-0.9~+0.5LSB,积分非线性误差是-1.4~+1.3LSB,在400MHz工作频率下,输出信号频率为80MHz时的无杂散动态范围为76.47dB,并且功耗仅为107.2mW。  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号