玻璃波导有效折射率的原位测量（特邀）

飞秒激光直写玻璃波导是快速制备三维集成光子芯片的一种重要手段,波导有效折射率的准确测量对于设计光子器件意义重大。设计并制备了一种断臂马赫-曾德尔干涉仪（MZI）结构对玻璃波导有效折射率进行原位精密测量。激光在断线区域和波导内的有效折射率不同,在传输相同长度下产生一定的相位差,最终导致不同的干涉结果。对断臂MZI结构的相位干涉结果进行处理,得到激光直写玻璃波导的有效折射率为1.504+7.7×10?4。利用RSOFT软件光束传播算法对器件进行模拟仿真,仿真结果与实验吻合良好。该精确测量玻璃波导有效折射率的方法对于提升光子芯片设计与制造能力具有重要意义。     

硫系玻璃光子晶体光波导的制备研究进展北大核心CSCD

光子晶体是一种介质常数周期性变化的人工介质材料,具有光子带隙和光子局域两个主要特征。光子晶体光波导是利用光子带隙特性传输光信息的光学器件。与传统的条形光波导相比,它最大的优势是在大的拐角处具有很低的传输损耗(如在60\O弯曲时传输损耗可以降低到5%),因此非常适合用于集成光学。从硫系玻璃材料的特征入手,详细介绍了聚焦离子束和电子束曝光这两种光子晶体光波导常用的制备方法,通过这两种方法制备出来的光子晶体光波导都具有较高的表面平整度和较低的传输损耗。对两种方法的制备工艺和特点进行了比较。最后简单介绍了硫系光子晶体光波导的应用,并对硫系光子晶体光波导的发展前景做了展望。     

基于端面耦合的InP基激光器/硅光波导混合集成技术研究

针对硅光子集成回路缺少实用化光源的问题,提出了一种1.55μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺,设计并制备了倒拉锥型端面耦合器,与锥形透镜光纤耦合效率为36.7%。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8%,1 dB耦合对准容差横向为1.2μm,纵向为0.95μm。     

硅基集成光子器件先进设计方法

硅基集成光子器件具有体积小、集成度高的突出优势,在光通信、数据中心光互连等领域具有广阔应用前景。然而,硅基波导耦合器件尺寸相对较大、工作带宽和工艺容差受限。硅基多模路由光子器件设计还面临挑战。文章介绍了近年来发展起来的两种硅基集成光子器件先进设计方法：绝热捷径法和变换光学方法,简要阐述其物理原理,并展示在硅基集成光子器件设计中的典型应用。     

Si基芯片光互连研究进展

综述了近年来Si基光互连,尤其是和微电子工艺兼容程度较高的芯片间和芯片内的光互连的进展。Luxtera公司已经率先实现了除光源外的所有光子器件的单片集成,IBM也提出并开始实施微电子学领域的片内光互连的技术方案,但Si基光互连大部分还停留在各构建单元器件性能提高的阶段,例如Si基发光、Si波导、Si波导耦合器、Si基调制器及光开关、Si基探测器以及用于光波导器件阵列的WDM技术。此外,还对Si基光源、光纤耦合、偏振敏感性以及光子器件的热稳定性提出了看法。总之,随着各种构建单元器件的综合性能、CMOS工艺兼容度、制备成品率的提高以及光电融合单片集成工艺的突破,光互连最终会成为现实,并引发微电子技术和IC行业的下一场革命。     

异质集成微波光子器件发展现状

微波光子学利用光子技术实现微波信号的产生、传输、处理及控制,可突破传统微波技术在带宽、传输损耗和抗电磁干扰等方面的瓶颈,提升雷达、电子战等信息系统的综合性能.激光器、电光调制器和光电探测器是微波光子技术中的三种核心光电子器件,其性能对微波光子链路的噪声和动态等指标具有决定性的影响,但基于分立器件的微波光子系统体积、重量较大,难以满足雷达、电子战等系统的阵列化需求,硅基异质集成技术以及高密度低损耗片上光传输互连技术是解决有源器件集成和无源器件集成的关键技术.文章介绍了用于微波光子的硅基激光器、电光调制器、光电探测器和波导的异质集成技术的发展现状,并探讨了集成微波光子技术的发展趋势.     

新型硅激光器系统的优化设计

通过在硅波导上添加反向偏压的PIN结构,建立了完整的全硅激光器系统.该系统包括半导体泵浦光源和硅波导放大器.建立的硅激光器增益模型,与已知的实验结果达到了很好的一致,并给出了泵浦光源输出波形和硅激光器的输出波形.该系统可以集成在很小的CMOS器件上,实现光电子器件的集成化,有着广泛的应用前景.     

SOI纳米线波导和相关器件研究进展

SOI纳米线波导具有对光场限制作用强、传输损耗低、弯曲半径小、集成度高、与传统CMOS工艺兼容等优点,采用SOI纳米线波导能够大大缩小光子器件的长度和面积,提高器件工作速度和效率,降低器件功耗.介绍了SOI纳米线波导在模式、损耗、偏振等方面与传统大尺寸硅基波导所表现出来的不同特性,评述了当前关于SOI纳米线波导和基于SOI纳米线波导光子器件的最新研究进展.     

面向可见光通信的硅基InGaN/GaN多量子阱波导定向耦合器光子集成芯片

利用可见光信号作为新型信息载体的光通信技术近些年来得到长足发展,为了开发新一代光子集成芯片作为可见光通信网络的终端器件,满足可见光信号发射、接收、传输与处理的复合需求,该文基于硅基InGaN/GaN多量子阱材料,设计了一种集成可见光波段微型发光二极管(LED)光源、波导定向耦合器、微型光电探测器于一体的光子集成芯片。该芯片利用InGaN/GaN多量子阱材料的发光探测共存现象,实现了上述复合功能。微型LED光源作为发射端,可以发射出蓝色波段的可见光信号,其发光强度受到注入电流的线性调制,可实现调幅可见光通信,适合作为可见光通信的发射端。微型LED光源发射的可见光信号传输进入波导定向耦合器,实现了片内有效传输耦合和光功率平均分配。经过耦合传输的可见光信号进入微型光电探测器,可以监测到与耦合传输的光信号强度相匹配的光电流。最后,可见光通信测试也表明该芯片可实现有效的可见光通信。该研究为发展面向可见光通信网络需求的复合功能光子集成芯片终端提供了更多可能性。     

聚合物双环谐振滤波器的研究

设计了一种基于多模干涉(MMI)耦合输入/输出结构的跑道型双微环串联谐振滤波器,并采用紫外光敏聚合物材料SU-8作波导芯层,聚合物CYTOP为下包层,在硅基底上完成了器件的制备.器件的波导端面尺寸为2 μm×1 μm,与设计值相符,扫描电镜显示所制备的器件波导侧壁陡直度较高.直波导传输损耗的测试结果表明,在1550 nm波长,直波导传输损耗约为2.0 dB/cm.测试并获得了多模干涉结构和器件的通光及输出光谱图\.测试结果表明,MMI结构在较宽的波长范围内实现了接近50∶50的功分比,微环谐振滤波器的通光性能良好,实现了滤波功能,器件的自由光谱区FSR实际值约为0.94 nm,与设计参数值很接近.研究结果表明采用聚合物SU-8制备小波导尺寸微环谐振器的器件简便可行.     

一种新型高增益、低噪声980nm微腔半导体光放大器的数值分析

提出了一种新型微腔半导体光放大器结构,该半导体放大器在普通行波光放大器的波导结构上引入了上下布拉格反射镜,并在波导前后两侧的上端面上分别刻蚀出入射和出射光学窗口,其上蒸镀增透膜层.信号光以一定的倾角斜入射到波导中,以之字型路线沿波导传播.提出了一个完整的、考虑了微腔特性的稳态模型,系统模拟了微腔半导体光放大器的特性.结果表明该微腔半导体光放大器的光纤到光纤增益可达40dB,而噪声指数只有3.5dB.     

用选择混合InGaAsP-InGaAsP量子阱技术研制的两段波长可调谐分布布拉格反射激光器

采用选择混合InGaAsP InGaAsP量子阱技术 ,研制出单脊波导结构的两段可调谐分布布拉格反射 (DBR)激光器 .激光器的阈值电流为 51mA ,可调谐范围为 4 6nm ,边模抑制比 (SMSR)为 40dB .     

Polarization-insensitive transition between sol-gel waveguide and electrooptic polymer and intensity modulation for all-optical networks

An intensity modulation using a hybrid electrooptic (EO) polymer/sol-gel straight channel waveguide, useful in the 1550-nm wavelength regime is demonstrated without using Mach-Zehnder interferometric waveguide. The sol-gel waveguide is selectively buried so that a vertical transition into and out of an EO polymer coated on the sol-gel waveguide is arranged. The throughput ratio for transverse electric (TE) and transverse magnetic (TM) modes of the light coupled out of the hybrid waveguide is improved up to 0.9 dB with the help of reduced birefringence of the EO polymer after corona poling. We show that the fabrication process of such hybrid-type waveguides enables production of a phase modulator operating at 1550-nm wavelength. The fabricated straight channel waveguide modulator exhibits stable- and high-intensity modulation efficiency (82%) using a simple cross-polarization setup after the polarization dependence is reduced. We demonstrate an all wet-etching process to fabricate polymeric EO modulators.     

Acousto-optic diffraction of optical guided waves in crystal quartz

A waveguide supporting a single propagating mode has been fabricated by ion beam modification of X-cut crystal quartz. The gas ion implantation reduced the index of a subsurface layer, and guiding occurred in the surface region. The acoustic properties of the quartz are little affected. Bragg diffraction of guided light by surface acoustic waves was observed with efficiencies of approximately 0.25% per milliwatt acoustic power.     

Blazed grating couplers on LiNbO3optical channel waveguides and their applications to integrated optical circuits

Blazed grating couplers on LiNbO3optical channel waveguides have been successfully designed, fabricated, and evaluated. A reactive ion beam etching technique was used to shape the groove profile of grating couplers. A large decay factor of 600 dB/cm along optical channel waveguide was obtained. The air coupling intensity ratio of 8:1 between positive and negative light propagation directions for ion beam angle of 55° indicated a strong blaze effect. Highly efficient optical coupling from channel waveguide to Si phototransistor was also demonstrated.     

Efficiency Enhancement and Beam Shaping of GaN–InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays

The enhanced light extraction and collimated output beam profile from GaN–InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorod arrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20 $^{circ}$.      

Widely tunable 850-nm metal-filled asymmetric cladding distributed Bragg reflector lasers

Broadly tunable distributed Bragg reflector (DBR) lasers utilizing metal-filled surface-etched diffraction gratings were fabricated on a GaAs-unstrained quantum well with AlGaAs core and cladding layers. Devices with 200- and 400-/spl mu/m gratings sections were fabricated. Single-mode devices are fabricated over a broad spectral range, exhibiting over 55 mW of single-facet output power. The optical properties of this structure are analyzed in terms of effective index step between the peak and valley of the grating and scattering loss in the DBR. Discrete devices were fabricated with lasing wavelengths between 846.6 and 862.9 nm at intervals of 1.44nm, representing a range of 16.3 nm. Wavelength tuning by current injection into the DBR section is explored, and a broad tuning range of over 18 nm is measured while single-mode performance is maintained. The spectral linewidth of these devices is measured. The temperature dependence of light versus current, threshold current values, and spectral characteristics are also examined.     

Efficient coupling in integrated twin-waveguide lasers usingwaveguide tapers

We demonstrate a 1.55-μm wavelength, InGaAsP-InP, twin-waveguide (TG) laser integrated with passive ridge waveguides using low-loss taper couplers. The lateral taper on the laser waveguide induces efficient resonant coupling of light between the active and passive layers. The device is fabricated using low-cost conventional photolithography and reactive ion etching of a TG structure grown by gas-source molecular beam epitaxy. This structure is suitable for integrating a variety of photonic devices without requiring epitaxial regrowth     

Wavelength-tunable asymmetric cladding ridge-waveguide distributedBragg reflector lasers with very narrow linewidth

Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) lasers with asymmetric cladding are demonstrated. This design requires only a single epitaxial growth of an asymmetric cladding laser structure while the grating and the ridge waveguide are fabricated after the growth. These lasers have a threshold current as low as 9 mA, a slope efficiency of 0.3 W/A, and a T₀ of 100 K. Wavelength tuning of 8 nm is achieved by current injection heating of the DBR section. A spectral-linewidth minimum of 36 kHz is achieved at an output power of 20 mW and is limited by linewidth rebroadening due to current injection in both the gain section and DBR section     

Optical mode conversion using chirped gratings

A design is presented for a 3 dB TE0-TE1 optical waveguide mode convertor using a chirped grating. Devices were fabricated in Ti in-diffused lithium niobate by ion beam etching the grating pattern into the waveguide surface. TE0-TE1 mode coupling was observed experimentally with an insertion loss of 1.5 dB.