采用F-P光纤环滤波器的窄线宽环形腔光纤激光器

提出了一种采用F-P光纤环滤波器的窄线宽环形腔激光器,该激光器采用环形腔结构,两个耦合比为30:70的耦合器和一段2 m长的未泵浦掺铒光纤构成F-P光纤环滤波器,F-P光纤环滤波器产生的梳状谱,可以增大激光模式之间的自由光谱范围（FSR）,在一定程度上减小跳模现象的发生,有利于模式的稳定。研究表明,通过对掺铒光纤的优化和耦合器的选择可以提高F-P光纤环滤波器的精细度,而F-P光纤环中的未泵浦掺铒光纤起到饱和吸收体的作用,使输出激光的线宽得到有效压缩。将保偏光纤光栅和F-P光纤环滤波器共同应用于环形腔掺铒光纤激光器,在室温下得到了3 dB线宽均小于0.07 nm（实验室光谱仪最小分辨率）的窄线宽双波长输出。在2 h的观测时间内,最大峰值功率波动小于0.4 dB,具有良好的稳定性。     

窄线宽激光的零拍测量法

分析了用光纤延时零拍法测量窄线宽激光时 ,光纤延时线长度与零拍光电流谱线上的附加波动关系 ,利用该方法对有源光纤环形腔滤波器输出谱线进行了测量 ,其附加波动变化规律实验结果与理论分析一致。     

基于特殊子环腔单纵模窄线宽掺铥光纤激光器

提出并实验验证了一种稳定的单纵模窄线宽环形腔掺铥光纤激光器,通过使用特殊的子环腔和自制的光纤布拉格光栅,实现了稳定的单纵模激射和窄线宽输出。子环腔由3个互相连接的光耦合器组成,用来抑制密集的多纵模和跳模。采用自制的光纤布拉格光栅,作为窄线宽波长滤波器,最终实现了稳定的单纵模激射。实验结果表明,该激光器在室温下可获得中心波长为1940.6 nm,光信噪比为60 dB的稳定信号输出。其频率噪声采用基于3×3光耦合器的自零差技术进行测量。当测量时间为0.05 s时,由频率噪声计算的线宽大约为8 kHz。     

基于掺铒光纤环形滤波器和多模光纤光栅的双波长激光器

提出了基于掺铒光纤环形滤波器和多模光纤光栅的双波长激光器。在单波长光纤激光器的基础上,增加了多模光纤布拉格光栅(MM-FBG)和高精细度的光纤滤波器。其中多模光纤布拉格光栅作为激光器的波长选择元件,可产生两个波长的激光输出。高精细度的光纤滤波器由两个光耦合器和一段弱泵浦的掺铒光纤构成,掺铒光纤产生的增益和光纤时延使滤波器具有高精细度的梳状谱响应,从而抑制了激光器产生的不需要模式,保证了输出的激光具有窄线宽特性。以980 nm的激光二极管(LD)作为泵源,得到了线宽为0.07 nm或0.08 nm的双波长输出,表明滤波器具有良好的滤波效果。     

基于高精细度光纤滤波器的双波长光纤激光器

提出了基于高精细度光纤环形滤波器的双波长窄线宽光纤激光器结构.在单波长光纤激光器的基础上,增加保偏光纤布拉格光栅(PM-FBG)和高精细度的光纤滤波器.其中保偏光纤布拉格光栅作为激光器的波长选择元件,可产生两个波长的激光输出.高精细度的光纤滤波器由两个光耦合器和一段弱抽运的掺铒光纤构成,掺铒光纤产生的增益和光纤时延使滤...     

单频单偏振窄线宽光纤激光器及其放大研究

为了获得高功率单频单偏振窄线宽激光,对一个带单级放大结构的环形腔结构掺铒光纤激光器系统进行了研究。采用作为可饱和吸收体的未抽运掺铒光纤结合作为波长选择器的高反射率光纤布喇格光栅形成超窄带滤波器,在环形腔内加入光纤偏振控制器和具有高消光比的保偏环行器获得单偏振光。环形腔输出后进行单级光放大以提高输出激光光功率。获得了206mW激光输出,输出功率长时间稳定度达到1.4%。通过光纤延迟自外差线宽测试系统得到输出激光线宽小于500Hz,光纤激光器输出光偏振度长时间稳定在99.7%。结果表明,非保偏可饱和吸收体加光纤布喇格光栅结合部分保偏结构可产生单频单偏振窄线宽激光,激光放大对线宽有明显的展宽效果。     

有源光纤环形腔进行频率调谐窄线宽激光的方法

本文提出用有源光纤环形腔来获得精确调谐窄线宽激光的新方法，理论分析结果表明：幅值（或相位）调制产生的频宽扩展对腔带宽的影响很小，滤波输出激光的线宽约等于入射光随机初相位决定的线宽，有源腔对滤波输出激光还有光放大作用。     

有源光纤环形腔滤波器优化

本文引入输入光线宽因子,利用多光束干涉理论,给出了有源光纤环形腔滤波器输出光谱密度等公式。利用这些公式可以对腔的结构和参数方便地进行理论分析和优化设计,当使该有源滤波器工作在锁定状态时,可得到窄线宽光输出。     

基于保偏掺铥光纤饱和吸收体的2μm波段超窄线宽光纤激光器

制作了一种单纵模超窄线宽环形腔掺铥光纤激光器,使用未抽运的保偏掺铥光纤作为饱和吸收体,结合光纤光栅法布里-珀罗滤波器,实现了激光器的单纵模运转和超窄线宽输出。实验结果表明:激光器在室温下可以获得中心波长为1942.03nm、光信噪比为63dB的稳定输出。通过100min的连续测量,激光输出功率的波动小于0.62dB,中心波长的波动小于光谱仪的最小分辨率0.05nm,在一定时间内具有良好的稳定性。采用基于频率噪声的线宽测量方法测得0.01s测量时间下的线宽为300Hz,在0.1s测量时间下的线宽约为3kHz。所制作的激光器将在对2μm波段激光纵模及线宽特性有严格要求的领域具有重要应用价值。     

基于可调F-P滤波器的线性波长扫描窄线宽光纤激光器

研制了一种基于可调F-P滤波器的线性波长扫描窄线宽光纤激光器。该激光器采用环形腔结构, 以高增益掺Er³⁺光纤(Er30-4/125)作为增益介质, 以保偏掺Er³⁺光纤(EDF08-PM)作为可饱和吸收体抑制跳模, 同时结合F-P滤波器选频, 获得了单频窄线宽的激光输出。通过线性调节F-P滤波器的驱动电压, 实现了对激光器波长的线性扫描。在两只975nm单模激光器的双向泵浦下, 实验中测得激光器阈值为15mW, 最大输出功率为24.3mW, 3dB线宽约为5.2kHz。当F-P滤波器在6.1~10.2V的线性电压驱动下, 激光器波长的线性扫描范围为1542.404~1558.836nm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.