Long-wavelength photodiodes based on <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb/<Emphasis Type="Italic">p</Emphasis>-AlGaAsSb heterostructures

Photodiodes sensitive in the wavelength ranges 1–2.5 μm and 1–4.8 μm at room temperature have been created on the basis of n-GaSb/n-GaInAsSb/p-AlGaAsSb double-junction heterostructures of two types. The broadband photosensitivity of the diode structures of both types is indicative of the complete separation of photogenerated electron-hole pairs in the staggered n-p heterojunction (n-GaInAsSb/p-AlGaAsSb). The noise characteristics of photodetectors based on the proposed diode structures have been studied. Prospects of the use of these devices in thermophotovoltaic cells for low-temperature radiation sources are considered.     

Inference with progressively censored <Emphasis Type="Italic">k</Emphasis>-out-of-<Emphasis Type="Italic">n</Emphasis> system lifetime data

A system with n independent components which works if and only if a least k of its n components work is called a k-out-of-n system. For exponentially distributed component lifetimes, we obtain point and interval estimators for the scale parameter of the component lifetime distribution of a k-out-of-n system when the system failure time is observed only. In particular, we prove that the maximum likelihood estimator (MLE) of the scale parameter based on progressively Type-II censored system lifetimes is unique. Further, we propose a fixed-point iteration procedure to compute the MLE for k-out-of-n systems data. In addition, we illustrate that the Newton–Raphson method does not converge for any initial value. Finally, exact confidence intervals for the scale parameter are constructed based on progressively Type-II censored system lifetimes.     

Impact-ionization-stimulated electroluminescence in isotype <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-AlGaAsSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb heterostructures

We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure.     

The sound velocity in liquid binary mixtures of <Emphasis Type="Italic">n</Emphasis>-alkanes

The method of direct measurement of the time of pulse transmission is used for investigating the sound velocity in liquid binary mixtures of n-alkanes, namely, n-hexane + n-hexadecane, n-octane + n-hexadecane, and n-decane + n-hexadecane in the range of temperatures from 298 to 433 K and pressures from 0.1 to 100.1 MPa. The maximal error of measurements is 0.1%. It is for the first time that experimental data for mixtures of n-octane + n-hexadecane and n-decane + n-hexadecane are obtained.     

Planar buried crescent InP/InGaAsP/InP heterostructure on <Emphasis Type="Italic">p</Emphasis>-InP

A process is described for liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a p-n-p-n/ZnSe leakage current blocking structure. The process enables the fabrication of 1.3-μm light-emitting diodes with a low threshold current, stable fundamental transverse mode operation, and high output power. When mounted with the mesa stripe up, the diodes offer an emission power above 30 mW.     

Flux Rule, <Emphasis Type="Italic">U</Emphasis>(1) Instanton,and Superconductivity

We examine some consequences of the duality that a U(1) phase factor added on a wave function describes a whole system motion and also plays the role of a U(1) gauge potential. First, we show that the duality solves a long-standing puzzling problem that the ‘flux rule’ (the Faraday’s induction formula) and the Lorentz force calculation for an emf emerging in an electron system moving in a magnetic field give the same result (Feynman et al. 1963). Next, we examine a U(1) phase factor induced on the wave function for an electron system due to the single-valuedness requirement of the wave function with respect to the electron coordinates, and its consequential appearance of a U(1) instanton. This instanton explains the Meissner effect, supercurrent generation, flux quantization in the units of \({{h} \over {2e}}\), and the voltage quantization in the units of \({{hf} \over {2e}}\) across the Josephson junction in the presence of a radiation field with frequency f. In the experiment, a radiation field must be present to have a finite voltage across the Josephson junction; but a clear explanation for it has been lacking. The present work provides an explanation for it, and also explains the high precision of the quantized voltage as due to a topological effect.     

Influence of anodic passivation on electrical characteristics of Al/<Emphasis Type="Italic">p</Emphasis>-Si/Al and Al/V<Subscript>2</Subscript>O<Subscript>5</Subscript>/<Emphasis Type="Italic">p</Emphasis>-Si/Al diodes

In this paper, the V₂O₅ thin film has been grown on the both p-type semiconductor and glass substrate by the spray pyrolysis method. For optical and structural properties of thin film, the optical absorption, SEM, AFM and XRD measurements have been done. It is observed that films exhibit polycrystalline behavior. The effects of anodic passivation on the characteristic parameters of diodes have been investigated using current–voltage (I–V) characteristics. The I–V measurements of the diodes have been performed at the room temperature in the dark. The main electrical parameters such as ideality factor (n) and barrier height (Φ _b ) of diodes have been calculated from the forward bias I–V characteristics. Likewise, the values of series resistance (R _s ) of diodes have been obtained from Norde method. It is observed that while the ideality factor decreases with anodic passivation, the barrier height increases.     

Modeling of the Complex Doping Dependence of dT<Emphasis Type="Italic">c</Emphasis>/dP of YBa2Cu3O6+<Emphasis Type="Italic">x</Emphasis>

The pressure-induced intrinsic effects in the CuO₂ plane within the van Hove singularity (VHS) scenario is combined with the modified two-dimensional (2D) lattice gas phenomenology for the basal plane to model the complex structure of the hole-doping dependence of the pressure derivatives of T _c of YBa₂Cu₃O_6+x. The experimentally observed structure is found to be reproduced reasonably satisfactorily in the present formalism. This shows that the pressure-induced changes in the CuO₂ plane and the oxygen ordering in the basal plane both play important roles in explaining the doping dependent pressure derivative of T _c .     

Thermodiffusion Coefficient Analysis of <Emphasis Type="Italic">n</Emphasis>-Dodecane /<Emphasis Type="Italic">n</Emphasis>-Hexane Mixture at Different Mass Fractions and Pressure Conditions

In this study, the thermodiffusion coefficient of n-dodecane/n-hexane binary mixture at 25 ^°C mean temperature was determined for several pressure conditions and mass fractions. The experimental technique used to determine the thermodiffusion coefficient was the thermograviational column of cylindrical configuration. In turn, thermophysical properties, such as density, thermal expansion, mass expansion and dynamic viscosity up to 10 MPa were also determined. The results obtained in this work showed a linear relation between the thermophysical properties and the pressure. Thermodiffusion coefficient values confirm a linear effect when the pressure increases. Additionally, a new correlation based on the thermodiffusion coefficient for n C₁₂/n C₆ binary mixture at 25 ^°C temperature for any mass fraction and pressures, which reproduces the data within the experimental error, was proposed.     

New Class of High-<Emphasis Type="Italic">T</Emphasis><Subscript>C</Subscript> Diluted Ferromagnetic Semiconductors Based on CaO without Transition Metal Elements

We propose new-type ferromagnetic semiconductors based on CaO and K₂S without any transition metal elements. These materials show transparent and half-metallic ferromagnetism if the deep-impurity-band width (W) induced by doping of C, N, Si, or Ge impurities, and the electron-correlation energy (U) satisfy the Stoner’s condition of highly correlated electron system (U>W). Based on our first-principles calculations, we demonstrate that these materials satisfy the Stoner’s condition, and could be new candidates for transparent and half-metallic DMSs.     

Effect of neutron radiation on the photoelectric parameters of <Emphasis Type="Italic">p-n</Emphasis>-InSe structures

The effect of irradiation with fast reactor neutrons at an effective energy of 1 MeV and a fluence within Φ = 1 × 10¹⁴?5 × 10¹⁵ n/cm² on the photoelectric parameters of p-n-InSe homojunctions obtained in direct optical contact between p- and n-type semiconductors has been studied. The exposure to fast neutrons leads to an increase in the rectification coefficient and the diode ideality factor of the current-voltage characteristics with increasing neutron dose. No significant changes have been observed in the photosensitivity spectra of p-n-InSe structures irradiated to various doses, which allows these structures to be recommended for the creation of radiation-resistant photodetectors.     

Spin Dynamics in the Bi-Directional Charge Density Wave State of High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

In this paper, we investigate the dynamical spin susceptibility in the bi-directional charge density wave (BCDW) state by adopting a random-phase approximation. In the BCDW state, we find that no spin resonance exists and only a broad commensurate peak appears for the frequency dependence of the dynamical spin susceptibility at Q = (π,π), though a low-energy spin gap feature can also be found as in the superconducting state. While the “hourglass” type of the dispersion for the BCDW state bears some similarities with that in the superconducting state, the momentum distribution of Im χ ^+?(Q,ω) is just the opposite with the incommensurate peaks lying along the diagonal direction for the energy below ω _c and along the axial direction above ω _c . In the coexistence of SC and BCDW, the frequency dependence of the dynamical spin susceptibility at Q = (π,π) generally shows the two-peak structure, reflecting two energy scales of the spin excitations. These unique features may serve as signatures to verify whether or not the BCDW state is responsible for the formation of the Fermi arcs.     

A comparative study of lignocellulosic ethanol productivities by <Emphasis Type="Italic">Kluyveromyces marxianus</Emphasis> and <Emphasis Type="Italic">Saccharomyces cerevisiae</Emphasis>

The yeast Saccharomyces cerevisiae is commonly employed in industrial ethanol production, regardless of the capability of Kluyveromyces marxianus strains to produce ethanol at similar or higher levels and on inhibitory conditions. Therefore, in this work strains of S. cerevisiae (ethanol RED and AR5) and K. marxianus (SLP1 and OFF1) were compared for ethanol production from sugarcane bagasse (SCB) and wheat straw (WS) hydrolysates. As it is known, during the lignocellulosic hydrolysis not only free sugars were obtained (SCB, g L^?1: glucose 7.64, xylose 8.38, arabinose 2.43; and WS, g L^?1: glucose 6.07, xylose 6.36, arabinose 2.09) but also growth inhibitors of yeast such as hydroxymethylfurfural and furfural that could modify the fermentation capability. The volumetric ethanol productivity (Q _p) was evaluated, and it was observed that the K. marxianus SLP1 was the most efficient for ethanol production reaching a Q _p of 0.292 and 0.250 g L^?1 h^?1 on SCB and WS hydrolysates, respectively. In contrast, S. cerevisiae AR5 and ethanol RED exhibited a reduced Q _p on SCB, but similar values of Q _p to K. marxianus OFF1 on WS. The results obtained show that it is possible to select K. marxianus yeast strains for ethanol production using SCB and WS hydrolysates obtaining higher Q _p than S. cerevisiae yeast strains. Considering the efficiency of ethanol production and the tolerance to inhibitors, K. marxianus strain SLP1 possesses a great potential as an industrial yeast for lignocellulosic ethanol production.     

Synthesis and characterization of <Emphasis Type="Italic">n</Emphasis>-ZnO:Al/CoPc/<Emphasis Type="Italic">p</Emphasis>-Si structures

Photosensitive structures of the n-ZnO:Al/CoPc/p-Si type were synthesized for the first time using vacuum sublimation of cobalt phthalocyanine (CoPc) and magnetron sputtering of a ZnO:Al target. The maximum photoresponse is observed when the structure is illuminated from the side of the ZnO layer and amounts to ?400 V/W at T = 300 K. Mechanisms of current transfer and peculiarities of the photosensitivity spectrum are considered. It is suggested that the new photosensitive structures can be used in multiband photoconverters of natural radiation with a broad working spectral range.     

Rate constant of <Emphasis Type="Italic">VT</Emphasis>/<Emphasis Type="Italic">VV</Emphasis> energy exchange in the collision of di- and polyatomic molecules within the SFO model

The numerical-analytical investigation of the shock forced oscillator (SFO) model is complete. Approaches for calculating the probabilities of quantum transitions from the initial to some final state with VV energy exchange of diatomic molecules and VV and VT energy exchange of polyatomic molecules are considered. Formulas for calculating the probabilities of the \({W_{{i_1},{i_2} \to {f_1},{f_2}}}\) transition for VV energy exchange in collision of molecules AB and CD within the harmonic approximation are represented (SFHO model). It is shown that the probabilities of a quantum transition in VV and VT energy exchange of polyatomic molecules can be calculated in terms of the quantum transition probability for VT energy exchange of diatomic molecules on the assumption of “frozen” quantum transitions of polyatomic molecules. The problem of determining the dissociation rate constant is considered by the example of a nitrogen molecule (N₂) in the N₂–N₂ system for the “improved” Lennard-Jones potential in VV energy exchange. The calculated dissociation rate constant is compared with the experimental data obtained for a shock tube.     

Predicting scientific impact based on <Emphasis Type="Italic">h</Emphasis>-index

Predicting the future impact of a scientist/researcher is a critical task. The objective of this work is to evaluate different h-index prediction models for the field of Computer Science. Different combinations of parameters have been identified to build the model and applied on a large data set taken from Arnetminer comprised of almost 1.8 million authors and 2.1 million publications’ record of Computer Science. Machine learning prediction technique, regression, is used to find the best set of parameters suitable for h-index prediction for the scientists from all career ages, without enforcing any constraint on their current h-index values with R ² as a metric to measure the accuracy. Further, these parameters are evaluated for different career ages and different thresholds for h-index values. Prediction results for 1 year are really good, having R ² 0.93 but for 5 years R ² declines to 0.82 on average. Hence inferred that prediction of h-index is difficult for longer periods. Predictions for the researchers having 1 year experience are not precise, having R ² 0.60 for 1 year and 0.33 for 5 years. Considering scientists of different career ages, average R ² values for researchers having 20–36 years of experience were 0.99. For the researches having different h-index values, researchers having low h-index were difficult to predict. Parameters set comprising of current h-index, average citations per paper, number of coauthors, years since publishing first article, number of publications, number of impact factor publications, and number of publications in distinct journals performed better than all other combinations.     

The Electronic Structure of the Cs/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) Nano-Interface

Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.     

Temperature-dependent <Emphasis Type="Italic">C-V</Emphasis> characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique

Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the capacitance–voltage (C-V) and conductance-voltage (G-V) characteristics of Au/ZnO/n-Si device were studied using admittance spectroscopy at changing temperature from 160 to 340 K with 20 K intervals and ?1 to +2 V bias voltage range. The interface thin film ZnO layer was deposited on the n-type Si wafer by atomic layer deposition technique (ALD) in order to obtain homogenous interface layer. The layer thickness of ZnO was taken as 10 nm by the resulting ZnO film growth rate at about 1.45 Å per cycle. This thin film layer was characterized with XRD and AFM analyses. It can be seen from the C-V curves of the device that the capacitance values increased in depletion region with increasing temperature and exhibited peaks towards to forward biases after 240 K temperature. The changing of capacitance values confirmed re-ordering and re-structuring of charges in the interface of the device with changing temperature. The G-V curves of the device also increased with increasing temperature and towards to forward bias voltages due to increasing free charges in the interface. The series resistance (\({R}_{s}\)) of the device was taken into account to understand its effect on main electrical parameters, and it could be seen from these results that the \({R}_{s}\) strongly depends on the device temperature. The impedance (Z) values decreased with changing from ?1 to +2 V bias voltages and increasing temperature. The barrier height which was obtained from the C ^?2 -V plots increased a slope of 0.00108 eV/K with a decrease in temperature from 160 to 340 K. It can be concluded that the Au/ZnO/n-Si device may be used and improved for next technological applications such as capacitor and memristor.     

Synthesis of nanostructured Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ni/C and Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Co/C catalysts and their activity in the reaction of oxygen electroreduction

Nanostructured Pt _x Ni/C and Pt _x Co/C catalysts (1 ≤ x ≤ 3) containing from 27 to 40 wt % of metal with the average size of metal (alloy) particles from 2.6 to 4.7 nm are obtained using the methods of liquid-phase synthesis. Addition of a doping component is found to yield a decrease in the average nanoparticle sizes and an improved activity of materials in oxygen electroreduction reactions. The obtained catalysts are characterized by high specific activity as compared to commercial Pt/C materials. The stability of electrocatalysts to selective dissolution of the doping component is evaluated.