Passively Q-Switched Diode-Pumped Continuous-Wave Nd:YAG-Cr(4+):YAG Laser with High Peak Power and High Pulse Energy

A high peak power and high pulse energy passively Q-switched diode-pumped cw Nd:YAG laser at 1.064-mum wavelength has been demonstrated with Cr(4+):YAG crystal as the saturable absorber. The average output power of 7-12 W and pulse duration of 100-250 ns was obtained with kilohertz repetition rates. The highest peak power and pulse energy obtained were 30 kW and 3.4 mJ, respectively. All the output resulted from the TEM(00) mode with M(2) < 1.1. The thermal lensing effect of the saturable absorber was investigated, demonstrating that it played an important role in optimization of the output.     

Investigation of continuous-wave and Q-switched microchip laser characteristics of Yb:YAG ceramics and crystals

Continuous-wave and passively Q-switched microchip laser performance of Yb:YAG ceramics and single-crystals was investigated. Highly efficient continuous-wave Yb:YAG laser performance was observed at 1030 nm and 1049 nm for both Yb:YAG ceramics and crystals with different transmissions of output couplers. The laser performance of Yb:YAG ceramic is comparable to that of Yb:YAG single crystal. Meanwhile, the laser performance of laser-diode pumped Yb:YAG/Cr⁴⁺:YAG all-ceramics- and all-crystals-combination passively Q-switched microchip lasers were investigated. Sub-nanosecond laser pulses with peak power over 150 kW were obtained with different Yb:YAG/Cr⁴⁺:YAG combinations. Linearly polarized laser was observed in Yb:YAG/Cr⁴⁺:YAG all-crystals combination and circular polarized laser was obtained in Yb:YAG/Cr⁴⁺:YAG all-ceramics combination. The best laser performance was obtained with Yb:YAG/Cr⁴⁺:YAG all-crystals combination.     

Passive Q switching of a solar-pumped Nd:YAG laser

Passive Q switching is a preferable choice for switching the Q factor of a solar-pumped laser because it requires neither a driver nor an electrical power supply. The superior thermal characteristics and durability of Cr(4+):YAG single crystals as passive Q switches for lamp and diode-pumped high-power lasers has been demonstrated. Here we report on an average power of 37 W and a switching efficiency of 80% obtained by use of a solar-pumped Nd:YAG laser Q switched by a Cr(4+):YAG saturable absorber. Concentration of the pumping solar energy on the laser crystal was obtained with a three-stage concentrator, composed of 12 heliostats, a three-dimensional compound parabolic concentrator (CPC) and a two-dimensional CPC. The water-cooled passive Q switch also served as the laser rear mirror. Repetition rates of as much as 50 kHz, at pulse durations between 190 and 310 ns (FWHM) were achieved. From the experimental results, the saturated single-pass power absorption of the Cr(4+):YAG device was estimated as 3 ? 1%.     

Timing jitter reduction and single-frequency operation in an acousto-optic Q-switched Cr,Nd:YAG laser

A laser-diode-pumped watt-level single-frequency combined actively and passively Q-switched (CAPQ) laser with a wavelength of 1064 nm that simultaneously uses a codoped Cr(4+),Nd(3+):YAG crystal as the gain medium and mode selector is presented. The optimum repetition period of the CAPQ laser is approximately 1.5 times the natural repetition period of the passively Q-switched laser. The averaged timing jitter is approximately 400 ns in the CAPQ laser and the repetition rate of the CAPQ laser is experimentally shown to reach a time instability of 0.2% over 10(6) pulses. The output is a stable single frequency with a linewidth of 400 MHz at 20 W pump power.     

Efficient quasi-continuous-wave and passively Q-switched laser operation of a Nd3+:BaGd2(MoO4)4 cleavage plate

Pumped by a Ti:sapphire laser at 807 nm, efficient quasi-cw and passively Q-switched laser operations have been realized from a 1.1 mm thick, 1.2 at. % Nd(3+):BaGd(2)(MoO(4))(4) cleavage plate in a plano-plano cavity. When the absorbed pump power was 1060 mW, the achieved maximum quasi-cw output power was 580 mW. The slope efficiency and absorbed pump threshold power were 60% and 50 mW, respectively. Using a Cr(4+):YAG crystal with an initial transmission of 85% as the saturable absorber, a pulse laser with 3.0 microJ energy, 30 ns duration, and 52 kHz repetition rate has been obtained when the absorbed pump power was 1060 mW. The polarization characteristic and laser spectra of both the quasi-cw and passively Q-switched lasers have been measured.     

Passively Q-switched diode-pumped Yb:YAG laser using Cr-doped garnets

We investigate the repetitive modulation in the kHz frequency domain of a passively Q-switched, diode-pumped Yb:YAG laser, by Cr⁴⁺:YAG, Cr⁴⁺:LuAG, and Cr⁴⁺:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross-section, e.g. σ_em=3.3×10⁻²⁰ cm² were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of ≈10.4 kW, with energy of ≈0.5 mJ/pulse, were extracted with 30% extraction efficiency.     

Passively Q-switched Nd:YVO(4) laser with a Cr(4+):YAG crystal saturable absorber

We demonstrate, for the first time as far as we know, a passively Q-switched operation of a Nd:YVO(4) laser in which a Cr(4+):YAG crystal and a laser-diode bar are used as the saturable absorber and the pump source, respectively. Stable laser pulses as short as 28 ns with 20-muJ energy can be generated with this laser, which has the advantages of simplicity, high efficiency, and good long-term stability.     

Pump beam waist-dependent pulse energy generation in Nd:YAG/Cr4+:YAG passively Q-switched microchip laser

Abstract

The incident pump beam waist-dependent pulse energy generation in Nd:YAG/Cr⁴⁺:YAG composite crystal passively Q-switched microchip laser has been investigated experimentally and theoretically by moving the Nd:YAG/Cr⁴⁺:YAG composite crystal along the pump beam direction. Highest pulse energy of 0.4 mJ has been generated when the Nd:YAG/Cr⁴⁺:YAG composite crystal is moved about 6 mm away from the focused pump beam waist. Laser pulses with pulse width of 1.7 ns and peak power of over 235 kW have been achieved. The theoretically calculated effective laser beam area at different positions of Nd:YAG/Cr⁴⁺:YAG composite crystal along the pump beam direction is in good agreement with the experimental results. The highest peak power can be generated by adjusting the pump beam waist incident on the Nd:YAG/Cr⁴⁺:YAG composite crystal to optimize the effective laser beam area in passively Q-switched microchip laser.     

Diode-pumped 214.8-nm Nd:YAG /Cr4+:YAG microchip laser system for the detection of NO

A passively Q-switched 214.8-nm Nd:YAG/Cr(4+):YAG microchip laser system for the detection of NO was designed, constructed, and tested. The system uses the fifth harmonic of the 1.074-microm transition in Nd:YAG to detect NO by laser-induced fluorescence. A significant challenge was the development of an environmentally stable coating to provide the necessary discrimination between the 1.074-microm laser line and the stronger transition at 1.064 microm. The exact position of the fifth-harmonic frequency was determined by use of NO fluorescence excitation spectra to be 46556 +/- 1.5 cm(-1). With a pulse energy of approximately 50 nJ of fifth-harmonic light, we observed a detection sensitivity for NO of approximately 15 parts per billion by volume in a simple, compact optical system.     

Q-switched 2-micron lasers by use of a Cr2+:ZnSe saturable absorber

Flash-lamp-pumped Ho:YAG (2090-nm) and Tm:YAG (2017-nm) lasers were, for the first time to our knowledge, passively Q switched by use of a Cr(2+):ZnSe saturable absorber. A Q-switched Ho laser with 1.3-mJ pulse energy and ~90-ns pulse duration and a Q-switched Tm laser with ~3.2-mJ pulse energy and 90-ns pulse duration were demonstrated. Compared with the free-running output energies at the Q-switching threshold pump levels, the Q-switching efficiencies were approximately 5% for the Ho:YAG laser and 16% for the Tm:YAG laser.     

Cr~(4+):YAG被动调Q Nd:YAG陶瓷激光器输出特性研究

本文对Cr~(4+):YAG被动调Q Nd:YAG陶瓷激光器的输出特性进行了理论和实验研究.在相同泵浦功率和不同输出耦合透过率条件下,实验测量了被动调Q陶瓷激光器的输出激光重复频率、平均输出功率以及单脉冲能量,并与理论计算结果进行了比较.研究结果表明,随着输出耦合透过率的增加,输出激光重复频率单调减小,而平均输出功率及单脉冲能量则呈现出先增加后减小的变化趋势,只是平均输出功率及单脉冲能量所对应的最佳输出耦合透过率会有所不同.     

Comparison on performance of passively Q-switched laser properties of continuous-grown composite GdVO4/Nd:GdVO4 and YVO4/Nd:YVO4 crystals under direct pumping

The comparison on performance of passively Q-switched laser properties of continuous-grown composite GdVO(4)/Nd:GdVO(4) and YVO(4)/Nd:YVO(4) crystals under direct pumping to the emitting level was demonstrated. A Cr(4+):YAG crystal was used as saturable absorber. At an incident pump power of 10 W, the average output power, the pulse width, the repetition rate, the pulse energy, and the peak power for a GdVO(4)/Nd:GdVO(4) laser were 1.22 W, 48.1 ns, 121 kHz, 10.1 μJ, and 209.6 W, respectively. And for a YVO(4)/Nd:YVO(4) laser under the same conditions, these output characteristics were 1.26 W, 44.9 ns, 218 kHz, 5.8 μJ, and 128.7 W, respectively.     

Laser-diode pumped passively Q-switched Nd3+:NaY(WO4)2 laser with Cr4+:YAG saturable absorber

A laser-diode pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with Cr⁴⁺:YAG saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different small-signal transmission of Cr⁴⁺:YAG are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

High-power high-repetition-rate UV light at 355 nm generated by a diode-end-pumped passively Q-switched Nd:YAG laser

We describe experimental results with a diode-pumped, passively Q-switched extracavity second- and third-harmonic generation. Cr:YAG is used as a saturable absorber for pulse generation. Taking into account the thermal effects of Nd:YAG at high incident pump power, we use a short plane-to-plane cavity configuration to take advantage of the maximum pump power and obtain the compactness structure. At the same time, we use the type-I critical phase-matched lithium triborate crystal to generate light at 532 nm and mix the residual fundamental at 1064 nm and the second-harmonic wave at 532 nm in the type-II critical phase-matched lithium triborate crystal for UV light generation at 355 nm. A third-harmonic-generation output power of 1.32 W is achieved at the incident pump power of 27.5 W, corresponding to an optical-to-optical efficiency of 4.8%. The instability of the UV laser power is less than 5% for 4 h.     

Control of the pulse width in a diode-pumped passively Q-switched Nd:GdVO4/KTP green laser with a Cr4+:YAG saturable absorber

Different techniques to control the pulse width of a diode-pumped passively Q-switched Nd:GdVO4/KTP green laser have been theoretically and experimentally studied. It is shown that, when we vary the positidns of the saturable absorber in the laser axis and the pump beam waist in the gain medium, we obtain an efficient means to control the pulse width. The experiments performed on a diode-pumped Nd:GdVO4/KTP green laser passively Q-switched by a Cr4+:YAG saturable absorber are consistent with the theoretical calculations obtained from the rate equation model, in which the intracavity photon density that is assumed to be the Gaussian spatial distribution, the longitudinal variation of the intracavity photon density, and the pump beam spatial distribution are also considered.     

Performance of diode-end-pumped Cr, Nd:YAG self-Q-switched and Nd:YAG/Cr:YAG diffusion bonded lasers

Self-passively Q-switching of a diode-pumped Cr,Nd:YAG, where the Cr⁴⁺ is used as a saturable absorber for the 1064 nm laser emission is reported. The maximum average output power was obtained using an output coupler of R=86%. The self-Q-switched diode pumped laser yielded 1.86-W average output power with low threshold pumping power (≈1.7-W), average slope efficiency of ≈34%, pulse duration of about 14–16 ns, and modulation frequency ranging from 2.4 to 73 kHz, depending on the input pumping power. These results are the highest reported for self-Q-switched lasers. Higher slope efficiency (42%) and shorter Q-switched pulses were obtained for a Q-switched Nd:YAG/Cr⁴⁺:YAG diffusion bonded laser. A comparison of the codoped Cr,Nd:YAG laser performance, with that of a diffusion bonded laser is reported and analyzed.     

Thermal tuning of laser pulse parameters in passively Q-switched Nd:YAG lasers

Modifying the output pulses of a passively Q-switched Nd:YAG laser, operating at 1064 nm, was realized by heating the laser crystal. With the demonstrated laser setups, a 100 K temperature rise led to a more than 50% increase in the pulse energy and a more than 10% decrease in the pulse length. This method offers an effective way to tune the output of the laser without mechanical adjustment or a change of components.     

Passive Q Switching of a Diode-Pumped 946-nm Nd:YAG Laser with 1.6-W Average Output Power

As much as 1.6-W average output power was emitted in a simple setup from a diffusion-bonded Nd:YAG rod with 70-100-ns Q-switched pulses at 946 nm and repetition frequencies between 15 and 45 kHz at 22-W incident diode-pump power. A Cr(4+):YAG crystal with a bleachable loss of approximately 2.5% and a length of 0.5 mm was used as a saturable absorber. The extraction efficiency was 47% in comparison with the continuous-wave laser output power of 3.37 W in the free-running regime.     

Diode-pumped passively Q-switched Nd:YVO4 green laser with a periodically poled KTP and Cr4+:YAG saturable absorber

A diode-pumped passively Q-switched Nd:YVO4 green laser with a periodically poled KTP and Cr4+:YAG saturable absorber is realized. The dependences of pulse repetition rate, pulse energy, pulse width, and peak power on incident pump power are measured for the generated green-light pulses. A rate-equation model is introduced to theoretically analyze the results obtained in the experiment, in which the spatial distribution of the intracavity photon density is taken into account. The numerical solutions of the rate equations agree with the experimental results.     

Plate-shaped Yb:LuPO4 crystal for efficient CW and passively Q-switched microchip lasers

It is demonstrated that plate-shaped crystals of Yb:LuPO₄, which are grown from spontaneous nucleation by high-temperature solution method, can be utilized to make microchip lasers operating in continuous-wave (CW) or passively Q-switched mode. Efficient operation of such a microchip laser, which is built with a 0.3 mm thick crystal plate in a 2 mm long plane-parallel cavity, is realized at room temperature. With 2.37 W of pump power absorbed, 1.45 W of CW output power is generated with a slope efficiency of 73%. When passively Q-switched with a Cr⁴⁺:YAG crystal plate as saturable absorber, the laser produces a maximum pulsed output power of 0.53 W at 1013.3 nm, at a pulse repetition rate of 23.8 kHz, the resulting pulse energy, duration, and peak power are 22.3 μJ, 4.0 ns, and 5.6 kW, respectively.