Formation of a highly oriented FeO thin film by phase transition of Fe3O4 and Fe nanocrystallines

A highly oriented FeO thin film was formed from a Fe₃O₄ thin film containing Fe nanocrystallines by post-annealing at 600°C. Fe₃O₄ thin films were grown on Si(100) substrates by ion beam sputter deposition under oxygen ambient. The stoichiometry of the iron oxide thin film could be precisely controlled by in situ X-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) pattern of the Fe₃O₄ thin film grown at substrate temperature of 300°C showed a mixed phase of Fe₃O₄ and Fe nanocrystallines with a preferred orientation (110). However, the mixed phase was converted to a highly oriented FeO(200) phase by post-annealing at 600°C. This could be inverted as a result of Ostwald ripening of the Fe₃O₄ and Fe nanocrystallines.     

Epitaxial and polycrystalline BaFe12O19 thin films grown by chemical vapour deposition

Epitaxial and polycrystalline barium hexaferrite BaFe₁₂O₁₉ thin films were prepared by metalorganic chemical vapour deposition (MOCVD). Films were grown by a liquid MOCVD technique which aim is to control precisely the precursor vapour pressures. Two kinds of substrates were used: sapphire (001) and silicon thermally oxidized. On Si/SiO₂ films are polycrystalline and the magnetization is isotropic. On Al₂O₃ (001), structural studies reveal the films to be predominantly single phase, well crystallized without annealing procedure and with the c-axis perpendicular to the film plane; epitaxial relationships between the film and the substrate were determined. The magnetic parameters, deduced from vibrating sample magnetometer measurements, show a high dependence of the magnetization with the orientation of the field with respect to the surface of the film.     

Nb掺杂YBCO薄膜钉扎机理的研究

通过低氟MOD法制备了Nb掺杂的YBa₂Cu₃O_7-x(YBCO)薄膜, 掺入的Nb以Ba₂YNbO₆(BYNO)相存在, 其尺寸大小在20~30 nm之间, 薄膜中BYNO纳米颗粒以外延和随机两种取向共存, 且以随机取向为主。BYNO纳米颗粒的周围出现堆垛层错, 并且BYNO周围的YBCO出现严重的晶格畸变, 这增加了YBCO薄膜内部的微观应变, 且随机BYNO颗粒含量越高, YBCO薄膜内部的微观应变就越大。微观应变增加了薄膜的磁通钉扎能力, 进而提高了薄膜在高磁场下的超导性能。     

Fe73.5Cu1Nb3Si13.5B9软磁粉/硅橡胶力敏复合材料的逾渗特性

以三元嵌段共聚硅橡胶为基体,Fe_73.5Cu₁Nb₃Si_13.5B₉软磁粉为应力敏感填充粒子,采用机械共混和精密铸压热成型方法制备出系列粉体含量的Fe_73.5Cu₁Nb₃Si_13.5B₉软磁粉/硅橡胶接触应力敏感复合材料,重点研究了其交流阻抗、直流电阻、粒子间及粒子与硅橡胶间相互作用程度等性能的逾渗特性。研究表明,该柔性力敏复合材料具有较显著的交流阻抗双逾渗特性。分析发现,“第一逾渗区”内材料的交流阻抗值由粒子的隧道跃迁主导,“第二逾渗区”内材料的交流阻抗大小取决于Fe_73.5Cu₁Nb₃Si_13.5B₉粒子链间的接触电阻值。     

Ion beam assisted texturing of polycrystalline Y2O3 films deposited via electron-beam evaporation

Ion-beam assisted deposition of polycrystalline Y₂O₃ films using e-beam evaporation was investigated. For growth on non-crystalline substrates, low temperature growth yields randomly oriented polycrystalline material. At elevated temperature, surface energy anisotropy yields a (111) uniaxial texture. For film deposition with irradiation from an Ar ion beam, the out-of-plane texture remained (111) in orientation. The incident Ar ion beam induces an in-plane alignment of the Y₂O₃ films that is relatively broad. A six-fold symmetry in the out-of-plane X-ray diffraction phi-scans was observed for the (111) textured Y₂O₃ films, indicating a multi-variant in-plane texture and suggesting anisotropic damage along both the (110) and (100) projections. The lack of a sharp, single variant in-plane texture with ion beam irradiation is consistent with the relatively weak bond strength in Y₂O₃.     

Effect of external magnetic field on the deposition of BaFe12O19

The contribution of an external magnetic field on the deposition of BaFe₁₂O₁₉ thin film was investigated. For this purpose, two (one with applied field and another without field) thin films of BaFe₁₂O₁₉ were deposited on the C-plane oriented sapphire (Al₂O₃) substrate employing pulsed laser deposition technique. Crystallographic orientation and texture were determined using an X-ray diffractometer. The magnetic parameters were deduced from a vibrating sample magnetometer (VSM). A spectrometer was used to study the optical properties of the films. The structural results reveal the film to be predominantly single phase with C-plane orientation in both the cases. The film deposited with field, however, has bigger grain size and more perfection in crystallinity. The magnetic parameters show that the film deposited with the field has more remanence magnetization and higher coercive field. The diffuse reflectance of the film deposited with field is much higher due to the increased grain size and roughness.     

Epitaxial growth of RuO2 thin films by metal-organic chemical vapor deposition

Conductive RuO₂ thin films were epitaxially grown on LaAlO₃(100) and MgO(100) substrates by metal-organic chemical vapor deposition (MOCVD). The deposited RuO₂ films were crack-free, and well adhered to the substrates. The RuO₂ film is (200) oriented on LaAlO₃ (100) substrates at deposition temperature of 600°C and (110) oriented on MgO(100) substrates at deposition temperature of 350°C and above. The epitaxial growth of RuO₂ on MgO and LaAlO₃ is demonstrated by strong in-plane orientation of thin films with respect to the major axes of the substrates. The RuO₂ films on MgO(100) contain two variants and form an orientation relationship with MgO given by RuO₂(110)//MgO(100) and RuO₂[001]//MgO[011]. The RuO₂ films on LaAlO₃(100), on the other hand, contain four variants and form an orientation relationship with LaAlO₃ given by RuO₂(200)//LaAlO₃(100) and RuO₂[011]//LaAlO₃[011]. Electrical measurements on the RuO₂ thin films deposited at 600°C show room-temperature resistivities of 40 and 50 μΩ cm for the films deposited on the MgO and LaAlO₃ substrates, respectively.     

五层纳米SiO2-Al2O3/聚酰亚胺复合薄膜的制备及性能

采用浸胶法制备了一系列SiO₂-Al₂O₃/聚酰亚胺（SiO₂-Al₂O₃/PI）五层耐电晕薄膜A_m A_n PA_n A_m,其中中间层（P）为纯PI薄膜,外层（A_m）、次外层（A_n）分别为SiO₂-Al₂O₃掺杂不同质量分数的纳米SiO₂-Al₂O₃/PI薄膜。采用TEM、FTIR、宽频介电谱仪、电导电流测试仪、耐电晕测试仪、介电强度测试仪和拉伸实验机对五层纳米复合PI耐电晕薄膜的微观结构、介电性能和力学性能进行了表征和测试。结果表明,SiO₂-Al₂O₃/PI复合薄膜掺杂层形成了分布均匀的有机/无机复合结构;SiO₂-Al₂O₃纳米粒子的保护作用是影响复合材料耐电晕性能的主要因素,复合薄膜A₃₂A₁₆PA₁₆A₃₂的耐电晕寿命最大,为23.4 h;外层掺杂量对五层SiO₂-Al₂O₃/PI复合材料的介电强度影响较大,复合薄膜A₂₀A₂₈PA₂₈A₂₀的介电强度最大,为302.3 kV/mm;通过对五层复合结构的设计,可以在兼顾材料力学性能的同时,提高其耐电晕寿命和介电强度。     

铁电相BiFeO3对多铁复合薄膜CoFe2O4-BiFeO3铁磁性能的影响

为了研究铁电相BiFeO₃对复合薄膜磁性能的影响,在LaNiO₃ (LNO)缓冲层的Si (100)衬底上旋涂制备了含有0、6、9、10层等不同厚度BiFeO₃的层状CoFe₂O₄-BiFeO₃ (CFO-BFO) 多铁复合薄膜。采用XRD、SEM以及TEM对其结构和形貌进行了表征,采用振动样品磁强计测量磁性,研究了不同厚度BFO对复合薄膜磁性的影响。结果表明: CFO和BFO在异质结构薄膜中共存。缓冲层LNO和铁磁相CFO薄膜具有精细微观结构及明显界面。铁电相BFO的厚度对CFO-BFO复合薄膜的磁性能产生了很大影响。在含有不同层数铁电相BFO的复合薄膜中,含有9层BFO复合薄膜的饱和磁化强度最大,达到了230 emu·cm^-3,相比无铁电相BFO的薄膜,饱和磁化强度提高了18.6%。初步讨论认为: 随着铁电相BFO厚度的增加,CFO与BFO之间的应力传导引起了复合薄膜饱和磁化强度的提高。     

CEMs and Faraday rotation study of γ-Fe2O3- Fe3O4films obtained by a new pyrolisis technique

Thin film iron oxides prepared by a new pyrolisis technique are studied by means of CEM spectroscopy and Faraday rotation measurements. It is shown that Fe3O4spinel oxides are obtained when the deposition is performed under Ar atmosphere. These spinel-ferrite films present an important magnetization component perpendicular to the film plane. It is also shown that the Fe3O4films are converted to γ-Fe2O3by oxidation in air while retaining a uniaxial magnetic anisotropy. We interpret this induced magnetic anisotropy as arising from a magnetoelastic coupling with the substrate. Faraday rotation hysteresis loops confirm the existence of a strong induced uniaxial magnetic anisotropy in these films.     

Biaxial CdTe/CaF2 films growth on amorphous surface

A continuous and highly biaxially textured CdTe film was grown by metal organic chemical vapor deposition on an amorphous substrate using biaxial CaF₂ nanorods as a buffer layer. The interface between the CdTe film and CaF₂ nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy. Both the TEM and X-ray pole figure analysis clearly reveal that the crystalline orientation of the continuous CdTe film followed the {111}<121> biaxial texture of the CaF₂ nanorods. A high density of twin faults was observed in the CdTe film. Furthermore, the near surface texture of the CdTe thin film was investigated by reflection high-energy electron diffraction (RHEED) and RHEED surface pole figure analysis. Twinning was also observed from the RHEED surface pole figure analysis.     

Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties

Bismuth titanate (Bi₄Ti₃O₁₂) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi₂TiO₅ ceramic target at a substrate temperature of 600 °C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi₄Ti₃O₁₂ film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm⁻² and 20 kV cm⁻¹, respectively.     

Water-assisted self-assembly of polyaniline/Fe3O4 composite honeycomb structures film

4-dodecylbenzenesulfonic acid-doped polyaniline/Fe₃O₄ composite honeycomb structure film is obtained by water-assisted self-assembly method. The morphologies of this honeycomb structure film were studied by transmission electron microscopic and atomic force microscropy, while the Fourier transform infrared spectra were obtained to illustrate its composition. This as-prepared film with conducting polymers and magnetic inorganic compounds is proved to show superparamagnetic property. Fabrication of 3D ordered macro-porous structures with conducting polymers and magnetic inorganic compounds should lead to applications in electronic-magnetic materials.     

Structure and conducting properties of La0.5Sr0.5CoO3−δ films on YSZ

La_0.5Sr_0.5CoO_3−δ (LSCO) thin films were deposited on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell electrodes. During the deposition, the substrate temperature was varied from 450 to 750°C, and the oxygen pressure in the chamber was varied from 80 to 310 mTorr. Films deposited at 650°C and an oxygen background pressure of 150 mTorr were mostly (100) oriented. Deposition at higher temperatures or under lower oxygen pressures lead to mostly (110) oriented films. Films with low electrical resistivity of 10⁻³ Ω·cm were obtained.     

Fe3O4磁性导体表面磁控溅射NdCoCr薄膜组织和磁性分析

采用磁控溅射工艺,以Fe₃O₄磁性导体作为基底材料在其表面制得Nd Co Cr合金薄膜,分析了加入不同比例Co的情况下制得的Nd-Co非晶薄膜垂直磁各向异性(PMA)性能及其磁畴特征,同时对退火态薄膜组织相成分和磁性进行研究。结果表明:本实验制得了具有非晶形态的薄膜结构,当薄膜内的Co含量增加后,形成了强度更高的Fe₃O₄衍射峰。当Co含量逐渐增大后,M_s发生了不断增强。初始薄膜K_eff表现为随Co含量增大而提高。Co含量为4%试样MFM图像上形成了明暗相间条纹。通过MFM方法测试得到的ΔΦr曲线表现为与Ku曲线形状具有明显相似性,都在Co含量为6%位置处达到最大值。各退火态试样中都形成了Nd₄Co₃、Nd₂Co₁₇、Nd Co Cr₂。当薄膜内析出Nd Co Cr₅与Nd₂Co₇纳米晶后,获得了更大矫顽力,当Co含量大于4%时,退火态薄膜形成了较低的矫顽力。     

RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si(100)

The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (χ_min) of the Y₂O₃ layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y₂O₃ film grown on Si(100) oriented with (110) direction and has a double domain structure. The 110 axis of Y₂O₃ layer is exactly parallel to the 100 axis of the Si substrate. It is also observed that the interface region of Y₂O₃ film has more crystalline defects than the surface region.     

Development of textures during the growth of silver films condensed in vacuum on glass

The crystal orientation of silver films evaporated onto glass in a vacuum of better than 1.33 × 10⁻³ Pa was studied as a function of the film thickness in the range 0.1–10 μm by means of the X-ray texture goniometer technique. When the substrate was at room temperature and the deposition rate was high (200 and 100 nm s⁻¹), the 111 orientation was prominent at small film thicknesses. Further film growth led to a rapid increase in the 100 orientation, which became predominant. Elevation of the substrate temperature at the same deposition rates resulted in a decrease in the number of crystallites oriented along the 100 axis, and at temperatures above 473 K the 111 orientation was dominant over the whole thickness range investigated. At a comparatively low deposition rate of 5 nm s⁻¹ at both room temperature and 573 K the crystallites were oriented with their (111) planes parallel to the substrate independent of the film thickness.     

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

Transparent and crack-free Bi₂Ti₂O₇ thin films with strong (111) orientation were successfully prepared on n-Si(100) by chemical solution deposition (CSD) using bismuth nitrate and titanium butoxide as starting materials. The structural properties were studied by X-ray diffraction. The dielectric constant at 100 kHz at room temperature was 118 and loss factor was 0.074, for a 0.4-μm-thick film annealed at 500°C for 30 min. The leakage current density was 4.06×10⁻⁷ A/cm² at an applied voltage of 15 V.     

放电等离子烧结技术制备Fe78Si13B9块体非晶纳米晶磁性材料

通过高能球磨技术制备了Fe₇₈Si₁₃B₉磁性非晶合金粉体,采用XRD和DSC分析了Fe₇₈Si₁₃B₉非晶合金粉体的相组成、玻璃转变温度T_g、开始晶化温度 T_x 和晶化峰温度T_p;利用放电等离子烧结（SPS）技术在不同烧结温度下制备了块体磁性非晶纳米晶合金试样,利用XRD、SEM、Gleeble3500、VSM等分析了不同烧结温度下烧结块体试样的相转变特性、微观形貌、力学性能和磁学性能。结果表明,在500 MPa的烧结压力下,随着烧结温度的升高,烧结试样中的非晶相开始逐渐晶化,烧结试样的致密度、抗压强度、微观硬度、饱和磁化强度均显著提高;在500 MPa的烧结压力和823.15 K的烧结温度下,获得了密度为6.6 g/cm³,抗压强度为1500 MPa,饱和磁化强度为1.3864 T的非晶纳米晶磁性材料。     

Patterned media write designs

Recording design alternatives are analyzed for 100 1 Gbit/in² vertical and horizontal patterned media, written at 1 Gbit/s with one and two pole heads. Bit write fields, disturb fields, and switching speeds are calculated as part of a system analysis of the theoretical potential of patterned media to address possible physics limits for conventional “featureless” continuous film media (these include thermal decay, nonlinear transition shift and transition noise, and high writer pole M_s requirements near the limit of known materials). The patterned media “bits” are assumed oriented vertically or horizontally by crystalline anisotropy, and smaller than 100 nm to allow single-domain, 1/2 ns switching. M_sH_c V/kT>500, implying thermal stability including media demagnetization and write head remanent fields, are nearly an order of magnitude areal density extensibility beyond 100 Gbit/in² with present-day head/media magnetic requirements