纳米Al_2O_3-Ni-P化学复合镀层的制备及其摩擦学性能

为了获得摩擦学性能优良的镀层,在20#钢基材上实施了纳米Al_2O_3-Ni-P化学复合镀,采用正交试验法优选了镀液配方,研究了镀液中纳米Al_2O_3含量、镀液温度对复合镀层显微硬度、摩擦和磨损性能的影响,用扫描电子显微镜对复合镀层表面形貌进行观察。结果表明,镀液中纳米Al_2O_3含量是影响复合镀层硬度和耐磨性能最主要因素。纳米Al_2O_3能有效改善Ni-P合金镀层结构,在镀层中分布较均匀,使复合镀层硬度和耐磨性能明显提高。当纳米Al_2O_3含量为6 g/L时,纳米粒子在复合镀层中分布致密、均匀,复合镀层硬度和耐磨性最佳,与基材20#钢结合性较好。镀液温度对复合镀层硬度和耐磨性能有一定影响,最佳镀液温度为85℃,此时复合镀层硬度和耐磨性较好。     

掺杂纳米SnO_2-Al_2O_3/Cu新型电触头复合材料的制备及耐磨性能

为满足低压电器对于高品质电触头材料的迫切需求,同时保护稀缺资源、降低电触头成本,采用粉末冶金工艺制备了掺杂纳米SnO_2-Al_2O_3/Cu新型电触头复合材料,并对其电导率、硬度及耐磨性能进行了研究。结果表明:复烧与冷变形工艺均可显著提高复合材料的烧结质量、密度、电导率与硬度。随着纳米Al_2O_3及掺杂纳米SnO_2颗粒的总含量增加,掺杂纳米SnO_2-Al_2O_3/Cu电触头复合材料的硬度与耐磨性能表现出了相同的变化规律,即先升高后降低。当纳米Al_2O_3及掺杂纳米SnO_2颗粒的总含量为0.80wt%时,复合材料的硬度与耐磨性能均达到最优;而当纳米Al_2O_3及掺杂纳米SnO_2颗粒的总含量保持0.80wt%不变时,随纳米Al_2O_3颗粒的含量增加,掺杂纳米SnO_2-Al_2O_3/Cu电触头复合材料的硬度与耐磨性能改善;当掺杂纳米SnO_2颗粒的含量为0时,复合材料的耐磨性能达到了最优。因此较之掺杂纳米SnO_2颗粒,纳米Al_2O_3颗粒对掺杂纳米SnO_2-Al_2O_3/Cu电触头复合材料的耐磨性能有更显著的提高作用。     

超疏水复合涂层的制备和性能研究

采用大气等离子喷涂工艺(APS)制备了双层Al_2O_3/PTFE复合涂层和单层Al_2O_3-PTFE复合涂层两种涂层结构体系的疏水复合涂层,使用扫描电子显微镜(SEM)、3D表面形貌仪、显微硬度计、接触角测试仪和摩擦磨损试验机分别表征了复合涂层的微观形貌、相组成、粗糙度、硬度、疏水性能以及耐磨性能。评价复合涂层的性能并进而研究了Al_2O_3陶瓷作为粘结层和硬质颗粒填充相以及工艺参数对复合涂层的疏水性能和耐磨性能的影响。结果表明:无论Al_2O_3陶瓷作为粘结层还是硬质填充相添加到涂层中,都显著提高了单一PTFE涂层的摩擦学性能。Al_2O_3-PTFE复合涂层的耐磨性能优于Al_2O_3/PTFE复合涂层,两复合涂层的磨损率和摩擦系数依次为2.84×10~(-5)mm~3/N·m、9.97×10~(-5)mm~3/N·m和0.51、0.38;复合涂层的表面都具有良好的疏水性能,与水的静态接触角分别为155.4°和148.9°。良好的疏水性能源于表面粗糙的微纳米级突起结构和表面存在密集分布的低表面能氟化物的协同作用。进行摩擦磨损试验后表面的突起结构受到一定的破坏,涂层的疏水性能有所下降,但是Al_2O_3/PTFE复合涂层仍然具有超疏水性。     

Ni/纳米Y2O3复合刷镀层的组织结构与摩擦磨损特性

添加纳米颗粒的复合镀层较常规单相镀层具有更优异的性能。采用电刷镀技术在2Cr13不锈钢表面制备了Ni/纳米Y2O3复合镀层,研究了纳米Y2O3含量对复合镀层的形貌、成分、硬度和摩擦磨损性能的影响。结果表明:与纯镍镀层相比,复合镀层表面更为平整致密;随着镀液中纳米Y2O3含量的提高,复合镀层的硬度呈现先升高后降低的趋势;当纳米Y2O3颗粒含量为15 g/L时,复合镀层的晶粒最为细小,硬度达到极大值,摩擦系数(0.20)明显低于快速镍镀层(0.38),磨损面的黏着和撕裂现象大大减轻,表现出良好的摩擦磨损性能。     

铜基纳米Al2O3复合刷镀层组织形貌及耐磨性研究

在紫铜基体上分别制备了普通快速铜镀层和纳米Al2O3/快速铜复合刷镀层,采用扫描电镜、金相显微镜、显微硬度计、摩擦磨损实验机对比研究了两种镀层的表面形貌、截面组织形貌、显微硬度和耐磨性。结果表明,纳米Al2O3颗粒的加入显著改变镀层组织形貌与性能。与普通快速铜镀层相比,纳米铜基复合刷镀层表面平整,组织更加细化致密,显微硬度增大,摩擦系数降低,减弱了磨损面的犁削效应和粘着效应,耐磨性优于普通快速铜镀层。     

Ni-ZrO_2-CeO_2二元纳米复合镀层摩擦磨损及耐蚀性研究

利用超声-脉冲电沉积法在45钢基体上制备了纯Ni镀层、Ni-ZrO_2纳米复合镀层和Ni-ZrO_2-CeO_2纳米复合镀层,对比研究了3种镀层的表面形貌、显微硬度、摩擦磨损及耐蚀性能。结果表明与纯Ni镀层、Ni-ZrO_2纳米复合镀层相比,Ni-ZrO_2-CeO_2纳米复合镀层表面最光滑且晶粒最细小,表面显微硬度最高为494.18 Hv0.1;在施加载荷50N、转速300r/min、磨擦时间3min的磨损条件下磨损量最小为2.6mg且摩擦系数最小为0.285;在常温3.5%NaCl溶液腐蚀条件下腐蚀速率最低为0.060383mm/year,表面腐蚀特征不明显。镀层中共沉积的纳米ZrO_2、CeO_2颗粒充分发挥了二元纳米粒子协同生长的优势,使得镀层金属晶粒更加细化,表面更加平滑光整,镀层的耐腐蚀性能得到提高。     

脉冲电沉积Ni-P/BN(h)复合镀层的组织结构与性能

目前,鲜见对Ni-P/Bn(h)复合电沉积层的制备及其性能的研究报道。在Q235钢表面脉冲电沉积了Ni-P/BN(h)复合镀层,并于400℃热处理80 min,对热处理镀层的组织结构、显微硬度、耐蚀性能和摩擦学性能进行了分析测试。结果表明:镀态复合镀层为非晶态结构,400℃热处理后发生晶化,显微硬度显著提高,达到907.5 HV2 N;在3.5%NaCl和10%H2SO4腐蚀介质中,镀层几乎未发生全面腐蚀;镀层在干摩擦条件下表现出良好的减摩耐磨性能,低载时为轻微磨粒磨损,随载荷增大表现为磨粒磨损和黏着磨损的混合磨损机制。     

电刷镀MoS2-C复合镀层摩擦学性能研究

采用纳米复合电刷镀技术在GCr15基体上制备了添加纳米石墨颗粒的镍基MoS2-C复合刷镀层,利用扫描电子显微镜、XPS光电子能谱仪以及HV-1000显微硬度仪对镀层的微观结构与成分组成进行了分析,利用MSTS-1摩擦磨损试验机对镀层的摩擦学性能进行了评估。结果表明:添加的纳米颗粒在镀层中弥散分布并与基质金属紧密结合,细化了镀层的晶粒尺寸,改善了镀层的沉积效果。制备的复合镀层摩擦学性能优异,实验表明:随着法向载荷的增大,镀层的摩擦因数逐渐降低而磨损率相应升高;随着滑动速率的增大,其摩擦因数降低而磨损率未出现明显变化。     

脉冲电流密度对Ni-WC/Co纳米复合镀层摩擦磨损性能的影响

目前,通过脉冲电沉积制备Ni-WC/Co复合镀层的研究报道较少。为了探究Ni-WC/Co纳米复合镀层对材料表面摩擦性能的影响,采用脉冲电沉积制备Ni-WC/Co纳米复合镀层,研究脉冲峰值电流密度对复合镀层晶体结构、晶粒尺寸和硬度的影响;室温下,在MM-W1B立式万能摩擦磨损试验机上测试复合镀层的摩擦磨损性能,分析其磨损机理。结果表明:随着峰值电流密度的增加,复合镀层晶粒尺寸先减小后增大,硬度则是先增大后减小,复合镀层的摩擦系数和磨损量都是先降低后升高;当峰值电流密度为10 A/dm2时,复合镀层的平均晶粒尺寸最小,硬度最高,摩擦系数和磨损量最低,耐磨性能最佳,复合镀层表面主要呈现轻微的划痕,且磨痕较窄,无疲劳磨损。     

YSZ纤维增强等离子喷涂Al2O3/8YSZ涂层耐磨性能研究

将纤维增韧理念应用在等离子喷涂涂层设计中,可提升陶瓷涂层的断裂韧性,解决等离子喷涂陶瓷涂层韧性不足的问题。采用大气等离子喷涂技术制备了添加4%和8%(质量分数)氧化钇稳定氧化锆(YSZ)的YSZ纤维增强Al_2O_3/8YSZ涂层,对纤维增强涂层的断裂韧性及耐磨性能进行了研究。结果表明:等离子喷涂YSZ纤维增强Al_2O_3/8YSZ陶瓷涂层由α-Al_2O_3、γ-Al_2O_3和t′相组成;添加YSZ纤维后,涂层的断裂韧性明显改善,添加8%YSZ纤维复合涂层的KIC达2.924 MPa·m~(1/2),涂层的显微硬度变化较小;在相同磨损工况下,相比于未添加纤维的涂层,YSZ纤维增强涂层的耐磨性显著提高,其中,添加8%YSZ纤维后复合涂层的耐磨性是未添加涂层的2.5倍。     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Ba2Ti9O20-Ba1.85Sm4.1Ti9O24 layered dielectric resonators with adjustable effective dielectric constant

The layered dielectric resonator structures composed of Ba₂Ti₉O₂₀ (BTO) and Ba_1.85Sm_4.1Ti₉O₂₄ (BSTO) ceramic pellets were introduced to design new microwave dielectric materials with adjustable dielectric constant between 50 and 70. Good combination of microwave dielectric properties (?_r,eff = 50 ~ 70, Qf = 11,700-19,100 GHz and τ_f = − 4.3 to − 1.5 ppm/°C) was obtained by the present approach, and such combination could be optimized by adjusting the volume fraction of BSTO and stacking scheme. For practical applications, the BTO and BSTO layers could be bonded by low-loss adhesive, and the effects of the adhesive on the microwave dielectric properties were limited.     

Raman scattering studies of ultrathin-layer YBa2Cu3O7/PrBa2Cu3O7 superlattices

We present Raman scattering studies ofc-oriented ultrathin-layer superconducting (YBa₂Cu₃O₇) _m /(PrBa₂Cu₃O₇) _n superlattices. For the superlattice with (m=2,n=1) sequence, Raman spectra reveal a new line in the spectral region around 320 cm^–1. It is interpreted as a mode representing a combination of IR optical phonons of the Y-sublayers with an admixture of aB _1g type Raman active vibration in the Pr sublayers. This new line, which is similar to those from the interior of the Brillouin zone of the original lattice, does not exhibit superconductivity-induced self-energy effects, although its counterpart in the pure substance does. No additional line is found in the (m=1,n=2) superlattice in the same region, supporting our interpretation for the (m=2,n=1) sample.     

Development of random access memory in Nd0.7Ca0.3MnO3/YBa2Cu3O7 heterostructure

The effects of electrode on the resistive switching in Nd_0.7Ca_0.3MnO₃(NCMO)/YBa₂Cu₃O₇(YBCO) heterostructure are investigated at room temperature. For Cu/NCMO/YBCO, resistance can be switched on-and-off from a high- to low-resistance state at a steady ratio of 25% with a pulsed-voltage of ± 3 V. On the other hand, a giant resistance-change as large as 1350% is observed with ± 5 V for Ag/NCMO/YBCO with a fast decay down to 550%. Our experimental results show clear evidences that the nature of interfaces can be modified by the electric field and it dictates the resistive switching behavior of these heterostructure devices, which are the potential candidates for the random access memory.     

Vortex motion in coupled DyBa2Cu3O7/(Y0.6Pr0.4)Ba2Cu3O7 heterostructures

Multilayer structures containing 24 Å thick DyBa₂Cu₃O₇ layers, separated by 96 Å of an (Y_0.6Pr_0.4)Ba₂Cu₃O₇ alloy, are studied to investigate the effect of coupling on vortex dynamics. With the magnetic field perpendicular to theab plane, and as a function of the number of superconducting layers in the structure, we find that the activation energy for flux motion increases, first linearly, and then saturates. This linear increase is taken as evidence that pancake vortices belonging to different DyBa₂Cu₃O₇ layers are stacked and have a coupled motion. Above a characteristic number of superconducting layers,N _c , shear of the vortex structures becomes important and the thermally activated process only displaces a stack ofN _c pancake vortices, meaning that the vortex lattice is turning three dimensional. In these structures we findN _c to be 2 to 3.     

Effect of Ca Substitution on the Superconductivity of La2.5Y0.5CaBa3(Cu0.88Fe0.12)7Oz

The structural and superconducting properties of single-phase La_2.5–y Y_0.5Ca_1+y Ba₃ (Cu_0.88Fe_0.12)₇O _z (LYCaBCuFe) (y= 0.0–1.0) compounds with triple perovskite structure are investigated using X-ray diffraction, resistivity, a.c. susceptibility, and oxygen content measurements. Increasing Ca substitution for La resulted in a decrease in unit cell axes and volume. T _c ^R=0 shows a marginal increase from 31 K to 37 K for y = 0.0–0.21 and thereafter it decreases with increasing y leading to zero T _c ^R=0 at y 0.84. This shows that the suppression of T _c from 80 K to 31 K by Fe doping at x = 0.12 La_2.5Y_0.5CaBa₃(Cu_1–x Fe _x )₇O _z cannot be compensated by appropriate hole doping with Ca in LaYCaBCuFe.     

Sr3.5Mg0.5Si3O8Cl4: Eu bluish-green-emitting phosphor for NUV-based LED

Sr₄Si₃O₈Cl₄:Eu²⁺ and Sr_3.5Mg_0.5Si₃O₈Cl₄:Eu²⁺ phosphors were prepared by a conventional solid state reaction (SS). Excited by 370 nm near-ultraviolet light, the phosphors show an efficient bluish-green wide-band emission centering at 484 nm, which originates from the 4f5d¹ → 4f⁷ transition of Eu²⁺ ion. The excitation spectra of the phosphors are a broad band extending from 250 nm to 400 nm. Mg²⁺-codoping greatly enhances the bluish-green emission of the phosphors. An LED was fabricated by coating the Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ phosphor onto an ~ 370 nm-emitting InGaN chip. The LED exhibits bright bluish-green emission under a forward bias of 20 mA. The results indicate that Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ is a candidate as a bluish-green component for fabrication of NUV-based white LEDs.     

Luminescence properties of Sn2P2Se6 crystals

A large family of Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) semiconductor-ferroelectric crystals were obtained by the Bridgman technique. The photoluminescence properties of the Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) family crystals strongly depend on their chemical composition, excitation energy and temperature. The influence of the Pb → Sn and S → Se isovalent substitutions on the luminescence properties of a crystal with the Sn₂P₂Se₆ basic composition was investigated. A broad emission band observed in the Sn₂P₂Se₆ crystal with a maximum roughly at 600 nm (at T = 8.6 K) was assigned to a band-to-band electron-hole recombination, whereas broad emission bands, peaked near 785 nm (at T = 8.6 K) and 1025 nm (at T = 44 K) were assigned to an electron-hole recombination from defect levels localised within the bandgap. Possible types of recombination defect centres and specific mechanisms of luminescence in the Sn₂P₂Se₆ semiconductor-ferroelectric crystals were considered and discussed on the basis of the obtained results and the referenced data.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.