共查询到18条相似文献,搜索用时 78 毫秒
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超辐射发光二极管因其宽光谱低抖动的光谱特点以及输出光为非相干光的特性,在光学相干层析成像技术、光处理技术等领域具有重要应用。为获得宽光谱低抖动的超辐射输出光,设计并制备了一种1 550 nm AlGaInAs多量子阱超辐射发光二极管。采取倾斜12波导并增加隔离区,结合抗反射薄膜,最终实现宽光谱输出的超辐射发光二极管,并比较了有无隔离区对器件性能的影响。实验结果表明,制得的超辐射发光二极管3 dB光谱宽度可拓宽至83 nm,光谱纹波小于0.1 dB,在200 mA工作电流下,出光功率大于1.5 mW。 相似文献
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量子阱结构超辐射发光二极管(SLD)具有良好的温度特性和一致性.简要介绍了一种1.3 μm量子阱结构超辐射发光二极管的外延结构,就该结构的一次光刻工艺进行了详细介绍.通过一系列的实验,确定出一个在现有条件下一次光刻的最佳工艺条件. 相似文献
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实验已经证明,用横向限制波导和超辐射发光二极管(SLD)相结合的办法提高了进入多模光纤里的耦合效率。超辐射发光二极管的光学特性介于发光二极管和激光器的之间。通过调节注入电流密度可使这些特性适合某一特殊的应用。早先的分析表明,与所用光纤等数值孔径(NA)的无源横向波导足以将受激辐射产生的绝大部分光子导引进能被光纤收集的光线内,同时还表明输出端面,即前端面的 相似文献
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抗中子辐射加固超辐射发光二极管的研究 总被引:1,自引:1,他引:0
我们设计并制作了一种高性能的抗中子辐射的超辐射发光二极管。高能中子辐射后产生的位移损伤造成器件有源区内少子寿命减少,从而导致器件光输出功率的降低。通过理论分析可知高输出功率的超辐射发光二极管对中子辐射的敏感度较低。本文中的超辐射发光二极管的有源区采用了具有高量子效率和小体积有源区的InGaAsP/InP多量子阱结构,外延波导层采用了线性缓变折射率分别限制结构(GRIN-SCH),并设计和优化出了特殊波导吸收区和腔面减反射膜结构。辐射实验结果显示,在中子注量为6?1013~1?1014n/cm2(1MeV)下,InGaAsP/InP多量子阱结构的超辐射发光二极管与双异质结结构相比具有更好的抗中子辐射性能。 相似文献
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通过在激光二极管端面底高减反膜,实现了辐射发光,制成了超辐射发光二极管,它在较宽的驱动电流范围(33 ̄68mA)内均呈现超辐射发光特性,对超辐射发光二极管特性进行了研究,实验表明,它的发射谱很宽,在输出功率达1mW情况下,谱线宽度仍达15nm。 相似文献
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具有激光二极管结构的1.3μm侧面发光二极管(Ⅰ):理论分析 总被引:1,自引:1,他引:0
讨论了用某些参数不合格的激光二有管管芯制作侧面发光二极管的可能性,并给出了超辐射发光二极管和侧面发光二极管的定量判定依据。 相似文献
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高功率850 nm宽光谱大光腔超辐射发光二极管 总被引:4,自引:0,他引:4
超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为提高半导体超辐射发光管的光谱宽度,采用非均匀阱宽多量子阱(MQW)材料拓宽超辐射器件的输出光谱。优化设计器件的波导结构,利用大光腔结构设计出高功率、低发散角850 nm超辐射发光二极管。采用直波导吸收区而后在器件的出光腔面上镀制抗反射膜的方法制作超辐射发光二极管。器件在140 mA时器件半峰全宽(FWHM)可以达到26 nm,室温下连续输出功率达到7 mW。器件的垂直发散角为28°,水平发散角为10°。由于器件具有比较小的发散角,与光纤耦合时具有比较高的耦合效率,单模保偏光纤耦合输出功率达到1.5 mW。 相似文献
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Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells 总被引:2,自引:0,他引:2
Ching-Fuh Lin Bor-Lin Lee Po-Chien Lin 《Photonics Technology Letters, IEEE》1996,8(11):1456-1458
Broad-band AlGaAs-GaAs superluminescent diodes are fabricated using asymmetric dual quantum wells. With a proper design of the quantum-well structure, the spectral width of the superluminescent diodes could be engineered. By choosing 40 /spl Aring/ and 75 /spl Aring/, respectively, for the two quantum wells, the spectrum remains bell-shaped and is broadened to 2/spl sim/3 times that of the conventional superluminescent diodes. The measured spectra show that there is no obvious preference on the transition in either well at any pumping current. 相似文献
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In work with superluminescent diodes, a significant new device structure has been developed that produces a spectral bandwidth of 160 ? at a power of 10 mW CW at room temperature. This spectrum has a Fabry-Perot modulation depth of less than 25%. These results point to a coherence length of about 45 ?m, making this light source very useful for fibre-optic gyroscope applications. 相似文献
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Using a set of traveling wave rate equations ,a superluminescent diode with a low facet reflectivity is studied .Analytical expressions of the distribu-tions of carrier density ,forward-and backward-propagation photon densities,and gain are obtained at different facet reflectivities.It is shown that the high nonuni-form carrier distribution is evident in the case of low facet reflectivity.The results can serve as useful guides in understanding emission mechanism of superlumi-nescent diodes. 相似文献
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High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved. 相似文献
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Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or diamond heat sinks using 40% Pb-60% Sn or 80% Au-20% Sn solder has been observed using measurements of the degree of polarization of the facet emission at low current levels. Stresses up to 109 dyn/cm2 were observed, with the magnitude of the stress dependent on the solder used, and the sign of the stress dependent on the difference in thermal expansion coefficient between the diode and the heat sink. Relaxation of the bonding stress over time was investigated as a function of temperature for each solder. The implications of the relaxation for the interpretation of high-temperature life tests, of superluminescent and laser diodes are discussed 相似文献
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AnalyticalmodelofasuperluminescentdiodeMADongge;SHIJiawei;GAODingsan(Dept.ofElec.Eng.,JilinUniversity,Changchun130023,CHN)Abs... 相似文献