Scanning white-light interferometer for measurement of the thickness of a transparent oil film on water

The thickness of a transparent layer of oil upon the surface of water is measured as the distance between the surface of oil film and the interface of the oil with the water. Two experimental results have demonstrated that the interface can reflect a white-light beam well enough to form an interferogram, even if the light is subjected to oil-film dispersion. When a beam of white light is incident vertically onto the oil-film surface, a scanning white-light interferometer in the Michelson configuration is employed to locate two serial reflections, surface reflection and interface reflection. The thickness of the transparent oil film on water is calculated based on the separation of these two interferograms. A limitation thickness, approximately 250 microm with 1.25 microm resolution, is achieved under the condition that there is 50 nW of optical power incident onto the oil-film surface with a wavelength centered at 1310 nm.     

Stabilization improvements of laser-diode closed-loop heterodyne phase-shifting interferometer for surface profile measurement

To stabilize the phase-shifting Fizeau-type interferometer against environmental disturbances (namely, vibration and temperature variations), the feedback scheme that uses the current-induced frequency modulation of a laser diode (lambda = 633 nm) and the two-frequency optical heterodyne method has been investigated, with particular attention to improvement of the achievable stabilization. It is demonstrated that introduction of the proportional-integral control into the feedback system improves stabilization against the proportional control case; e.g., stabilization is improved 5 times for 100-nm(p-p) vibration at the frequency range at 30 Hz. The surface profile measurement for a sample mirror was conducted with a reproducibility of 6.8 nm in the root mean square under the subwavelength-amplitude vibration at 100 Hz.     

Double lateral shearing interferometer for the quantitative measurement of tear film topography

A lateral shearing interferometer designed and built for the study of the precorneal tear film topography dynamics and its effect on visual performance is presented. Simple data processing algorithms are discussed and tested on data illustrating different tear topography features: postblink tear undulation, tear breakup, eyelid-produced bumps and ridges, bubbles, and rough precontact lens tear surfaces.     

Extrinsic optical-fiber ultrasound sensor using a thin polymer film as a low-finesse Fabry-Perot interferometer

Theoretical and experimental aspects of an extrinsic optical-fiber ultrasound sensor are described. The sensor is based on a thin transparent polymer film acting as a low-finesse Fabry-Perot cavity that is mounted at the end of a multimode optical fiber. Performance was found to be comparable with that of a piezoelectric polyvinylidene dinuoride-membrane (PVDP) hydrophone with a sensitivity of 61 mV/MPa, an acoustic noise floor of 2.3 KPa over a 25-MHz bandwidth, and a frequency response to 25 MHz. The wideband-sensitive response and design flexibility of the concept suggests that it may find application as an alternative to piezoelectric devices for the detection and measurement of ultrasound.     

Current distribution measurement in YBCO thin film for a superconducting fault current limiter

Current distribution in the superconducting film for a resistive fault current limiter is important, because it influences AC loss and a uniformity of S/N transition. The lateral current distribution of the film was reconstructed from the magnetic field distribution which is measured by multiple Hall probes. The following results were obtained. (1) Non-uniform current distribution in the superconducting film was observed when the current was less than 1.3 times of critical current (I_c). (2) The current in a superconducting film was uniform when the current was much higher than I_c. The current can be considered uniform when the film works as a fault current limiter, because the S/N transition starts about twice of I_c. (3) The validity of the measurement was verified by the comparison with the electric circuit simulation.     

Substrate parameter determination for thin film spectrophotometric measurement correction

A method of obtaining accurate values for the optical parameters of thin film substrates is described. Calculations for reflected and transmitted fluxes in substrate sets are developed allowing for double reflection. A simple procedure to fit measurements is also illustrated. Values for substrate parameters are extracted and used to correct for substrate influence in thin film spectrophotometric measurements. Corrected thin film measurements and data calculated with obtained optical constants are compared.     

High frequency dynamic imaging of domains in thin film heads

A wide-field magnetooptic domain observation system with a time resolution of 10 ns has been developed to study magnetization dynamics in thin-film heads. The instantaneous dynamic response on the top yoke of thin-film recording heads is examined at any chosen instant within the drive current cycle at frequencies up to 20 MHz. Different phase responses from different domain walls in the head are observed and interpreted in terms of hysteretic wall motion, effective field density variation in the head, and wall orientations relative to the flux conduction direction. Two different flux conduction mechanisms associated with two different domain structures in the central region of the head are observed and discussed. Flux conduction in the center of the head by motion of backgap walls and magnetization rotation for domain structures with and without the backgap walls was observed. The domain structure with the backgap walls is probably undesirable because the backgap wall motion may cause a decrease in head efficiency during high-frequency operation and could cause noise during read-back     

Contact-independent measurement of electrical conductance of a thin film with a nanoscale sensor

Contact effects are a common impediment to electrical measurements throughout the fields of nanoelectronics, organic electronics, and the emerging field of graphene electronics. We demonstrate a novel method of measuring electrical conductance in a thin film of amorphous germanium that is insensitive to contact effects. The measurement is based on the capacitive coupling of a nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) to the thin film so that the MOSFET senses charge diffusion in the film. We tune the contact resistance between the film and contact electrodes and show that our measurement is unaffected. With the MOSFET, we measure the temperature and field dependence of the conductance of the amorphous germanium, which are fit to a model of variable-range hopping. The device structure enables both a contact-independent and a conventional, contact-dependent measurement, which makes it possible to discern the effect of the contacts in the latter measurement. This measurement method can be used for reliable electrical characterization of new materials and to determine the effect of contacts on conventional electron transport measurements, thus guiding the choice of optimal contact materials.     

Broadband light profile microscopy: a rapid and direct method for thin film depth imaging

Light profile microscopy (LPM) is a recently developed technique of optical inspection that is used to record micrometer scale images of thin film cross-sections on a direct basis. This technique uses a novel right-angle imaging geometry that shows outstanding contrast for subtle interface structures and morphologies that are invisible to conventional methods of inspection. When laser sources are used for sample illumination, image contrast is provided by luminescence and elastic and/or inelastic scatter. When a white-light excitation source is used for LPM, primary contrast is obtained from elastic scatter, while secondary contrast results from refraction, secondary transmission, and secondary reflection from material phases. We term this mode of inspection broadband light profile microscopy (BB-LPM). It is implemented with a compact, easily aligned apparatus and minimal sample preparation, and it shows outstanding interface contrast similar to laser LPM. In this work we demonstrate BB-LPM as a method for direct imaging of the layers structures of a variety of thin film samples of industrial and manufacturing interest.     

化学气相沉积金刚石薄膜生长的原位反射率测量

报道了化学气相沉积金刚石薄膜生长的原位反射率测量,提出了监控金刚石薄膜生长的激光反射多光束干涉的数学模型。通过原位反射率的测量,精确监控了金刚石薄膜的生长厚度,成功地制备了红外增透增,这种方法的测量装置简单、紧凑而且可靠。     

应用性极薄铜薄膜电阻的自动测量

本文采用实时测量方法,测量了铜薄膜导电时的电阻.利用监测电阻状态可制作极薄的膜材.与接近块状薄膜相比较,导电性能有所不同.测量了真空下与常态下其随时间变化状况,观察到其形成后有波动的状态.使用光学干涉法测定了可作为常规电极极限态薄膜尺寸约为90 nm左右,其导通电流极限约为0.0290 A/mm,在大气中氧化过程极快,电阻也迅速增加,也更容易受到大电流的破坏.     

A new method for the exploration and measurement of crack growth using a thin conductor film

A method has been developed in which the length of a crack on any metallic or non-metallic surface can be measured in situ, simply and at low cost. This is done by applying a thin, conducting film to the surface and then measuring the increase in voltage that occurs as the crack lengthens.     

Characteristics of a linear array of a-Si:H thin film position sensitive detector

The increasing demand in automation processes in finishing techniques also calls for automatic measurement and inspection methods. These methods ought to be installed as close as possible to the production process and they ought to measure the values needed in a safe and fast way, without disturbing the process itself. Simultaneously they should be free of wear and insensitive against mechanical perturbations. This approach can be reached by proper combination of the laser triangulation technique with an array of linear position sensitive detectors, able to supply information about the surface finishing of an object. This is the aim of this paper that envisages to present experimental results of the performances exhibited by such an array constituting 128 elements. The analogue information supplied by this array is processed by an analogue/digital converter, directly coupled to the array and whose information is computer processed, concerning the recognition of patterns and the processing of information collected over the object to be inspected.     

Simple method for measuring frequency chirps with a Fabry-Perot interferometer

A simple method for measuring the frequency-chirped response of lasers is presented. This method relates the deviation from the Lorentzian line shape of the transmission of a Fabry-Perot interferometer to the frequency chirp of the laser and allows a direct measurement of the frequency chirp. Two chirps produced by an external-cavity laser diode with an intracavity electro-optic crystal were measured. The first measurement was of a linear chirp of 800 MHz occurring in a time of 12.3 mus, and the second measurement was of eight repeated 800-MHz linear chirps each occurring in 337 mus. Agreement between the measured and the expected frequency-chirped response of the laser is shown.     

Double-grating interferometer for measurement of cylinder diameters

We describe a double-grating interferometer for the measurement of cylinder diameters. The unique characteristic of this interferometer is that one can freely change the period of the interference fringes by turning the grating, which permits the measurement range of the interferometer also to be changed freely according to the cylinder diameter to be measured. A clear image of the cylinder can be obtained because the aperture diaphragm blocks the beams diffracted from the edge of the cylinder. The outside and inside diameters of the M4 x 0.7 mm hand tap are measured with this double-grating interferometer.     

The measurement of thin film stress using phase shifting interferometry

Abstract

A new technique for determining the stress of thin films is described. This technique combines digital phase shifting interferometry with image-processing software. A circular disc polished on one side is used as the coated substrate during film deposition. The average stress in thin films can be derived by comparing the deflection of the substrate before and after film deposition. The deflection of the substrate by the deposited film is obtained by the phase map. Using the Zernike polynomial fitting algorithm, a three-dimensional contour map is generated from the polynomial coefficients to visualize the deformation of the thin film and to examine the tensile or compressive stress after film deposition. Four oxide films prepared by ionbeam sputter deposition are investigated for their film stresses. The experimental results show that the stress values are concordant with measurements using other methods.