共查询到19条相似文献,搜索用时 93 毫秒
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《微纳电子技术》1986,(5)
研制了用于直播卫星接收机的12GHz波段GaAs双栅MESFET单片混频器。为了缩小芯片面积,把一个缓冲放大器直接与混频器的中频端口连接,而不采用中频匹配电路。混频器和缓冲放大器分开制造在两个芯片上,以便单独测量。混频器芯片尺寸为0.96×1.26mm~2,缓冲放大器芯片尺寸为0.96×0.60mm~2。混频器的双栅FET,以及缓冲放大器的单栅FET的电极间距很小。栅长和栅宽各1μm和320μm。在11.7~12.2GHz,带有缓冲放大器的混频器提供转换增益为2.9±0.4dB,单边带噪声系数12.3±0.3dB。本振(LO)频率为10.8GHz。低噪声变频器由单片前置放大器、镜象抑制滤波器,以及单片中频放大器与混频器连接构成。在同一频段,变频器提供转换增益为46.8±1.5dB,单边带噪声系数为2.8±0.2dB。 相似文献
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采用高质量的MBE材料,成功地制作了单胞栅宽20mm的芯片。用栅与n^+凹槽自对准和辅助侧墙工艺制作了栅长0.45μm的TiPtAu栅,欧姆接触采用AuGeNi合金工艺,采用PECVD SiN钝化,空气桥结构及芯片减薄Via-Hole工艺。经内匹配得到了单胞芯片3.7 ̄4.2GHz下P。≥7.3W,Gp≥8dB,ηadd〉25%;4胞合成器件P。≥25W,Gp〉7dB,ηadd〉25%的良好结果。 相似文献
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采用高质量的 MBE材料 ,成功地制作了单胞栅宽 2 0 mm的芯片。用栅与 n+凹槽自对准和辅助侧墙工艺制作了栅长 0 .45 μm的 Ti Pt Au栅 ,欧姆接触采用 Au Ge Ni合金工艺 ,采用 PECVD Si N钝化 ,空气桥结构及芯片减薄 Via-Hole工艺。经内匹配得到了单胞芯片 3.7~ 4.2 GHz下 Po≥ 7.3W,Gp≥ 8d B,ηadd>2 5 % ;4胞合成器件 Po≥ 2 5 W,Gp>7d B,ηadd>2 5 %的良好结果。 相似文献
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本文根据GaAs MESFET单片行波放大器的原理,研制了一种新型宽带单片混频器.混频电路制在厚为0.1mm,面积为2.7×1.8mm的GaAs基片上,RF和LO分别通过等效特性阻抗为50Ω的G_1线和G_2线进入混频电路,且这两个频率在4个GaAs双栅MESFET(DGFET)中混频.这种MMIC混频器在中频频率为1.0GHz.射频频率在2~12GHz范围内得到约为8.5dB的变频损耗(无中频匹配电路),其平坦度约为±0.6dB.这一结果有助于进一步研究与实现单片宽带微波接收机. 相似文献
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卢凯权 《固体电子学研究与进展》1983,(2)
<正>1971年Turner等人提出了在源漏之间设立两个独立的肖特基势垒栅,这种双栅GaAsMESFET由于它具有增益高、稳定性好、信号调制能力强等优点,因此,近来发展较快,在一些领域获得广泛的应用. 相似文献
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本文叙述了12GHz低噪声GaAs MESFET的设计和制造.用普通光刻技术制成了高性能GaAs MESFET.在12GHz下测得器件最小噪声系数为1.4dB,相关增益7.5dB. 相似文献
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《Microwave Theory and Techniques》1976,24(6):300-305
Microwave performance of single-gate and dual-gate GaAs MESFET's with submicron gate structure is described. Design consideration and device technologies are also discussed. The performance of these GaAs MESFET's exceeds previous performance with regard to lower noise and higher gain up to X band: 2.9-dB noise figure (NF) and 10.0-dB associated gain at 12 GHz for a 0.5-mu m single-gate MESFET, and 3.9-dB NF and 13.2-dB associated gain at the same frequency for a dual-gate MESFET with two 1-mu m gates. 相似文献
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A method to measure impact ionization current in GaAs MESFETs is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in 〈110〉 GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model 相似文献
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设计、研制了一种工作在L波段的GaAs单片低噪声放大器。该放大器在HP-8510B网络分析仪和HP-8970B自动噪声仪上的测试结果为:1.1~1.5GHZ频段,NF≤2.0dB,G≥18dB,VSWR(in,out)≤2:1,增益起伏≤0.5dB;在1.5~2.0GHZ频段NF≤2.5dB,G≥18dB,VSWR(in,out)≤2:1,增益起伏≤±0.5dB。 相似文献
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俞土法 《固体电子学研究与进展》1984,(4)
本文从栅源串联电阻R_s和有效栅长L_f两方面论述了深槽自对准斜蒸栅结构可明显减小R_s与缩短L_f,有利于降低器件的噪声系数。 本文还用相关栅长L_a和器件在低温下的性能说明GaAs材料的质量对器件噪声系数的影响。提高GaAs半绝缘衬底和缓冲层质量以及与有源层交界面附近的迁移率,可较明显地缩短相关栅长L_a,降低器件噪声。 采用这一器件结构,并选用质量较高的GaAs材料,制得的MESFET,在12GHz下相关增益G_a为7.5dB,噪声系数NF_(min)为1.4dB,与理论预计值相符。 相似文献
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The occurrence of stationary domains and negative differential resistance in GaAs MESFETs is shown to be favoured for a certain range of combinations of pinch-off voltage, gate voltage and saturation voltage. Outside this range the transistor either shows instability or normal JFET behaviour. The predictions are in good agreement with available experimental data. 相似文献
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GaAs MESFETs (metal-epitaxial-semiconductor-field-effect transistors) with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AlGaAs/InGaAs pseudomorphic HEMT (high-electron-mobility transistor) devices. Implanted MESFETs with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S -parameter measurements, a current-gain cutoff frequency f 1 of 48 GHz and a maximum-available-gain cutoff frequency f max greater than 100 GHz are achieved. These results clearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications 相似文献
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Charache G.W. Akram S. Maby E.W. Bhat I.B. 《Electron Devices, IEEE Transactions on》1997,44(11):1837-1842
The metal semiconductor field effect transistor (MESFET) represents a more realistic test for “passivation” efficacy than conventional capacitor test structures due to its prototypical fabrication process. This paper evaluates Gallium-Arsenide (GaAs) surface passivation films utilizing the MESFET as a test vehicle. For this study, gate-to-drain leakage current, gate-to-drain breakdown voltage, complex impedance versus frequency, and low-frequency noise measurements are performed on MESFETs with various passivation films. The results indicate that a hydrogen plasma used to “pre-clean” the GaAs surface in conjunction with an in situ plasma-enhanced chemical vapor deposition (PECVD) Si3N4 passivation film yields the best performance. In contrast, atomic-layer-epitaxial ZnSe demonstrated inferior performance (even in comparison to PECVD Si3N4 passivation films that did not receive a hydrogen “pre-clean”) 相似文献