等离子体刻蚀处理对金刚石膜粘附性能的影响

采用直流等离子体射流ＣＶＤ法在ＹＧ８质合金基体上成功地合成了多晶金刚薄膜。通常基体表面经金刚石磨盘研磨、稀硝酸化学侵蚀脱钴预处理后，沉积的金刚石薄膜的的粘附性能仍不理想。本文首次采用原位的Ａｒ－Ｈ２等离子体射流对基体表面进行适当的轰击、刻蚀处理，显著粗化了基体表面，并使基体表面显微组织和化学成分发生重大变化，并且在合适的沉积工艺条件下，沉积的金刚石膜的粘附性能显著提高。借助ＸＲＤ、ＳＥＥＭ、ＴＥＭ     

碳—氢—氯体系金刚石薄膜生长条件预测

首次计算了一碳－氢－氯体系中生长金刚石膜的相图，研究了该体系中金刚石生长区随衬底温度及氯含量变化的趋势，与实验结果符合较好，计算结果表明，Ｃ－Ｈ－Ｃｌ系相图中金刚石生长区被限制在两个小三角形（ＣＨ４－Ｈ－ＨＣｌ和ＣＣｌ４－ＨＣｌ－Ｃｌ）中变化，可能生长金刚石薄膜的碳氢氯组分波严格地限制在金刚石生长区内，并随生长温度和压力等条件而变化，当气相中氯含量与氢的含量相近时，金刚石生长区趋于消失，金刚石生长     

类金刚石薄膜的微结构及其电学性质的研究

通过透射－反射谱,红外光谱表征了类金刚石ａ－Ｃ：Ｈ：Ｎ薄膜微结构与氮含量的关系。实验结果表明,随Ｎ２／Ａｒ气体流速比的增加,在ａ－Ｃ：Ｈ：Ｎ膜内Ｎ－Ｈ含量增加,Ｃ－Ｈ含量减少。     

影响金刚石薄膜生长因素的研究

本文用ＨＦＣＶＤ法对在硬质合金衬底上生长金刚石薄膜的诸多影响因素，如衬底的预处理、碳源浓度和热丝及衬底温度等进行了系统地研究并最终找出在该衬底上生长金刚石薄膜的最佳生长条件。     

低压下用CO＋H2气体轩人造金刚石的相图计算

用非平衡热力学耦合模型计算了低压下由ＣＯ＋Ｈ２气体制备人造金刚石的相图，这些相图与经典的平衡热力学理论计算的相图不同，都有一个金刚石生长区，金刚石生长区的存在是实现用ＣＯ＋Ｈ２气体制备人造金刚石的热力一文认为相图中的金刚石生长区是体系中体系中超平衡氢原子和超平衡２氧原子对金刚石相和石上不同作用的结果，不同压力下相图中金刚石生长区的稍有不同，压力降低时，金刚石生长区将向低ＣＯ浓度的方向移动，本文还将     

类金铡石薄膜内应力的测试

采用射频－直流等离子增强化学气相沉积法制备出类金刚石薄膜，用弯曲法测定薄膜的内应力。类金刚石薄膜中存在１－４．７ＧＰａ的压应力，沉积工艺对薄膜的内应力有很大影响，薄膜的内应力随极板负偏压的升高而降低，随Ｃ２Ｈ２气体一的增加而增大。     

PCVD方法合成AlN基金刚石薄膜热沉

利用ＰＣＶＤ方法，对在ＡｌＮ基板上合成金刚石薄膜进行实验研究，并就提高金刚石薄膜热导率及增强其与基底的粘附力学等问题进行分析和讨论。     

采用不同载气混合B_3N_3H_6原料制备B－N薄膜

采用Ｎ２、Ｈ２和Ａｒ三种载气混合的Ｂ３Ｎ３Ｈ６原料，余辉微波等离子体增强化学气相沉积ＢＮ薄膜．通过漫反射富氏变换红外光谱，Ｋｎｏｏｐ硬度和附着性划痕试验分析薄膜的结构，成分和性能．结果表明，Ｎ２和Ｈ２混合的Ｂ３Ｎ３Ｈ６原料制备的薄膜具有ｃ～ＢＮ和ｈ－ＢＮ双相组织，Ａｒ混合的Ｂ３Ｎ３Ｈ６原料具有ｈ－ＢＮ单相组织．载气直接参与Ｂ３Ｎ３Ｈ６气相合成ＢＮ的反应过程，决定薄膜的结构特征，影响薄膜的性能．     

γ射线辐照对类金刚石薄膜结构与特性的影响

用射频等离子体方法在玻璃基底上制备了类金刚石薄膜。分析了γ射线辐照类金刚石薄膜（以下简称ＤＬＣ薄膜）的结构与特性改变。采用Ｒａｍａｎ及红外光谱进行结构分析表明：随辐照剂量的增加，在膜中出现ＳＰ３Ｃ—Ｈ及 ＳＰ２Ｃ—Ｈ 键的断裂与减少，ＳＰ３Ｃ—Ｃ键的略微增加．当辐照剂量达 １０ ×１０４Ｇｙ时，ＳＰ３Ｃ—Ｈ键减少约５０％，与此同时，出现膜中氢的重新键合，并从中释出。γ射线辐照使ＤＬＣ薄膜的电阻率呈上升趋势，膜的类金刚石特征更加明显，结构得到改善。本文对γ射线对ＤＬＣ薄膜的辐照机制进行了简要的讨论。     

金刚石薄膜蓝区电致发光研究

报道了金刚石薄膜的蓝区电致发光现象,总结了几种有关金刚石薄膜蓝区发光“Ａ”带的发光机理。提出了一种提高金刚石薄膜电致发光器件发光强度的方法。     

离子束技术沉积羟基磷灰石薄膜的结构及溶解性能

分别采用离子束溅射和离子束增强沉积技术,以烧结羟基磷灰石（HA）陶瓷为靶材,在纯钛金属基片表面沉积HA薄膜．X光电子能谱分析表明：薄膜中Ca、P、O元素的化学态与所用HA陶瓷靶材相接近;相比HA靶材,薄膜表面存在CO₃^2-．X射线衍射分析表明：沉积薄膜均为非晶态结构,经650℃退火处理转变为结晶磷灰石．在模拟体液中的溶解实验揭示：薄膜仅与溶液中Ca、P和O存在离子交换;薄膜易降解,浸泡10天,样品经历了降解、再沉积过程;相比离子束溅射沉积膜,离子束增强沉积膜具有加速沉积Ca、P的能力．     

不同退火方式对0.7BiFeO3-0.3PbTiO3薄膜的铁电性能及漏电流的影响

利用溶胶凝胶法在LaNiO3/SiO2/Si衬底上制备了0.7BiFeO3-0.3PbTiO3(BFPT7030)薄膜,研究了快速退火及常规退火两种不同的后续退火处理方式对薄膜铁电性能及漏电流性能的影响.XRD测试表明,经快速退火处理的BFPT7030薄膜结晶完好,呈现出单一的钙钛矿相.SEM测试结果显示,经快速退火处理的BFPT7030薄膜结晶充分,但经常规退火处理的BFPT7030薄膜表面致密性较好,且在升温速率为2℃/min时薄膜的晶粒更细小.经快速退火处理的BFPT7030薄膜的铁电性能较为优异,在升温速率为20℃/s时,其剩余极化Pr为22μC/cm2,矫顽场Ec为70 kV/cm,并具有较小的漏电流.XPS测试结果表明,经常规退火处理的BFPT7030薄膜其铁离子的价态波动较小.     

钼薄膜的制备、力学性能和磨损性能

采用直流磁控溅射技术在GCr15轴承钢底材上沉积了钼薄膜。利用XRD，AFM对不同负偏压下沉积的钼薄膜的结构和表面形貌进行了表征；利用纳米压痕仪对薄膜的硬度和膜基结合强度进行了测定；最后利用DF-PM型动静摩擦系数精密测定仪和扫描电镜(SEM)研究了薄膜的硬度、残余模量与负偏压的关系。结果表明：利用直流磁控溅射法制备的钼薄膜的硬度随负偏压的变化存在最大值，另外负偏压还影响薄膜的微结构、粗糙度以及膜基结合力，但负偏压的改变对钼薄膜的摩擦系数影响不大。     

Optical properties of organo-soluble polyimide thin films and their applications in liquid crystal displays

Three organo-soluble polyimide powders have been synthesized. Their imidization was verified by Fourier transform infrared (FTIR) and thermal gravimetric analysis (TGA) techniques. The amorphous morphology of their thin films were confirmed by X-ray diffraction. Polyimide thin films were prepared by solution casting or spin coating. UV–visible transmission spectra of thin films revealed that they are almost transparent in the range of visible light. With in-plane orientation, revealed by FTIR spectra, negative birefringence (Δn) of thin films were observed, and refractive indices of the thin films along the film plane (n_TE) and normal to the plane (n_TM) were measured by a prism coupler. Because of negative birefringence of the thin films, they can be substituted for the compensation films for twisted nematic liquid crystal displays (TN-LCDs) to extend their viewing angles. In this paper, a 90°C TN-LCD and 120°C TN-LCD were taken as examples to show the compensation effect of thin films of a qualified polyimide.     

基于Ag(TCNQ)热透镜效应的全光型开关

Ag(TCNQ)是一种电荷转移型金属有机络合物。用真空蒸发与真空热压相结合的方法使它分散到PMMA ,PHPMA ,PC等高分子树脂中 ,制成了不含任何有机溶剂的透明光学薄膜 ,并证实了它具有光热透镜效应。     

Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods

Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.     

Rh:BaTiO3 thin films with large nonlinear optical properties

We report the fabrication and the nonlinear optical properties of Rh-doped BaTiO3 thin films. The films were deposited on SrTiO3 (100) substrates by pulsed-laser deposition. The deposited Rh:BaTiO3 thin films were single phase and c-axis orientation investigated by x-ray diffraction. The films exhibited large nonlinear optical effects, which were determined using Z-scan technique at a wavelength of 532 nm with a laser duration of 10 ns. The real and imaginary parts of the third-order nonlinear susceptibility chi (3) were 5.71 x 10(-7) esu and 9.59 x 10(-8) esu, respectively. The value of Re chi (3) of Rh:BaTiO3 films is much larger than those of several representative nonlinear optical thin films. The results show that Rh:BaTiO3 thin films have great potential applications for nonlinear optical devices.     

Optimization of growth conditions of ZnO nano thin films by chemical double dip technique

Abstract

Zinc oxide (ZnO) nano thin films have been deposited by the chemical double-dip technique using aqueous ZnSO₄ and NaOH solutions. The ZnO films were characterized in terms of surface morphology by x-ray diffraction, energy-dispersive x-ray analysis (EDX), the use of a scanning electron microscope (SEM) and atomic force microscope (AFM) for surface morphology. The films exhibited a smooth morphology. The chemical states of oxygen and zinc in the ZnO nano thin films were also investigated by x-ray photoelectron spectroscopy (XPS). In the present investigations, highly textured ZnO thin films with a preferential (002)-orientation were prepared on glass substrates. The deposition conditions were optimized to obtain device-quality films for practical applications.     

复合抛光对 CVD金刚石薄膜表面光洁度的改进研究

采用激光抛光和热化学抛光相结合的方法，对通过热丝CVD方法生长的金刚石薄膜进行了复合抛光处理．并利用X射线衍射仪（XRD）、拉曼光谱仪（Raman）、扫描电子显微镜（SEM）和原子力显微镜（AFM）对金刚石薄膜进行了表征．结果表明，所合成的金刚石薄膜是高质量的多晶（111）取向膜；经复合抛光后，金刚石薄膜的结构没有因抛光而发生改变，金刚石薄膜的表面粗糙度明显降低，光洁度大幅度提高，表面粗糙度Ra在100nm左右，基本可以达到应用的要求．     

直流磁控反应溅射制备IrO2薄膜

为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响,利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．