1.10 Growth and composition of Al clusters on NaCl

In most theories on the formation and growth of thin solid films diffusion of deposited monoatoms upon substrate surface is suggested to be the deciding process. ^1,2 It has been shown recently that the motion of smaller nuclei may also take place and influence the kinetics of deposition and growth of thin films. ^3,4 In the present work the formation of thin aluminium film on NaCl monocrystal was studied with the aim to discover phenomena related to the motion of small nuclei. The influence of this motion on the kinetics of thin film formation has also been discussed.     

Simulation of growth dynamics in atomic layer deposition. Part III. Polycrystalline films from tetragonal crystallites

Materials with one- and two-dimensional crystal structures often form crystals with the shape of needles and platelets, respectively. This should be expected to have great influence on the properties of thin films grown from such materials, and the effect on texture and topography is shown in this paper by a series of simulations. The topic of this paper is the effect of different aspect ratios of crystals with tetragonal symmetry on the resulting thin films. However the major results should also apply to crystals of other types of symmetry having aspect ratios deviating from one. The growth dynamics in atomic layer deposition of polycrystalline thin films have been simulated for randomly oriented and randomly positioned crystallites. Crystalline seed objects adapting shapes of tetragonal boxes with aspect ratios from 0.1 (platelets) to 10 (needles) has been used as examples for growth of films from tetragonal crystals. The dependence of roughness, surface crystal density, and texture on the film thickness is shown. Topography and cross sections of simulated films with different aspect ratios are discussed. Non-linear growth regimes are consistently found in the initial stage of the film formation. A conversion from type-2 to type-1 substrate inhibited growth is observed as the aspect ratio deviates significantly from one.     

Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study

The growth of GaSb thin films by MBE on GaAs (001) is investigated experimentally, using TEM, and theoretically, using KMC simulations. The atomic scale mechanisms inherent to the growth are discussed and described in the KMC model in which the strain is introduced through an elastic energy term based on a valence force field approximation. We observe that the first two monolayers of the deposited films form strained three-dimensional clusters, but further deposition induces film relaxation and rough 3D growth with valley formation presenting (111) facets with unstable bottoms. We show that the roughening morphology and creation of grooves during growth are in agreement with experimental TEM observations.     

Electromigration and crevice formation in thin metallic films

The problems of electromigration and crevice, or crack, formation in thin metallic films are reviewed. Various measurement techniques of electromigration in thin films are descrived. The effect of several variables on electromigration are discussed. It is shown that alternating currents can also cause electromigration damage.     

多晶体薄膜生长中的织构诱导与控制

综述了多晶体薄膜材料织构的诱导和控制方法，影响薄膜结晶过程中晶体取向的因素及不同生长条件下形成晶体择优取向的原因，讨论了目前多晶体薄膜织构控制研究中存在的问题和发展方向。     

1.13 Plating with ion accelerators

Formation of thin films by sputtering and ion plating are well-known techniques. The present contribution describes ion beam plating which is a novel technique somewhat related to ion plating. Thin films of metal compounds on a substrate are decomposed by ionic bombardment resulting in films with good adherence to substrate. The formation of thin palladium films on silicon surfaces will be discussed in detail. Halide compounds of palladium dissolved in organic solvents are sprayed onto the substrate. Subsequently these thin films are exposed to ion beams of inert gases in the energy range below 100 keV. After ion exposure, remains of the halide compound are removed chemically. The ion beam plated film, which appears mirror-like, is then investigated by scanning electron microscopy, proton back-scattering in order to characterise the ion beam plated film. The possible applications of ion beam plated films will be discussed.     

Film growth of metals and semiconductors with ionized beams and surface imperfections

The nucleation and growth processes of thin films of metals and semiconductors on a solid surface are discussed in terms of the controlled treatment of substrate surfaces by bombardment with photons, electrons and ions, In particular, epitaxial film growth with ionized beams is discussed in conjunction with surface damage.For metal deposits such as gold and silver on alkali halide crystals, nuclei are trapped by imperfections on the surface and grow into islands. Vapor deposits of semiconductors are produced with partially ionized beams and show good epitaxy, with lowering of the epitaxial temperature. These results are reviewed and discussed as a problem involved in the growth processes of thin films.     

Video tape manufacture by high vacuum evaporation—aspects of machine technology

The next generation of video tapes will use evaporated thin films with their superior properties such as recording density, output level, frequency characteristics and signal-to-noise ratio. This paper describes the metal layer formation by a simple model for the growth of microcolumns at oblique incidence deposition. The most relevant process parameters are discussed. The layout of a production coater is described.     

Engineering Halide Perovskite Crystals through Precursor Chemistry

The composition, crystallinity, morphology, and trap‐state density of halide perovskite thin films critically depend on the nature of the precursor solution. A fundamental understanding of the liquid‐to‐solid transformation mechanism is thus essential to the fabrication of high‐quality thin films of halide perovskite crystals for applications such as high‐performance photovoltaics and is the topic of this Review. The roles of additives on the evolution of coordination complex species in the precursor solutions and the resulting effect on perovskite crystallization are presented. The influence of colloid characteristics, DMF/DMSO‐free solutions and the degradation of precursor solutions on the formation of perovskite crystals are also discussed. Finally, the general formation mechanism of perovskite thin films from precursor solutions is summarized and some questions for further research are provided.     

电流密度和衬底处理方式对CaMoO4薄膜电化学制备的影响

主要研究了利用恒电流电化学技术制备CaMoO4薄膜的工艺中,电流密度和衬底处理方式对薄膜制备的影响.研究发现,增大阳极氧化电流密度会加快薄膜的生长速度,但会加剧晶粒团簇生长的趋势、减弱薄膜与衬底的附着力和薄膜的均匀性;衬底的不同处理方式对薄膜晶粒的生长速度、沉积方式、均匀性等有较大的影响,在抛光衬底上薄膜的沉积速度比酸腐蚀和粗磨的衬底要快,且不易造成晶粒的团簇生长.结果表明,CaMoO4薄膜的电化学沉积,应在抛光衬底上进行;电流密度控制在0.5mA/cm2附近比较好.     

山嵛酸Langmuir膜结合氨气扩散控制生长碱式硝酸锌薄膜

利用山嵛酸Langmuir膜有机模板控制和氨气扩散动力学控制相结合的仿生矿化方法,制备了大面积均匀致密且沿(200)晶面取向生长的Zn5(OH)8(NO3)2·2H2O薄膜。采用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和X射线衍射(XRD)分别对样品形貌、表面成分及其晶型进行了表征。结合π-A曲线研究了薄膜生长的驱动力,对材料结构的形成原因进行了探讨。结果表明,Langmuir膜模板诱导结合动力学控制下的无机晶体生长体系为在室温下合成特殊结构和性能的薄膜材料提供了一种可行的方法。     

Morphology and growth of electrodeposited cuprous oxide under different values of direct current density

The growth of Cu₂O thin films electrodeposited by a two-electrode system with acid and alkaline electrolytes under different values of direct current (DC) densities was investigated. The microstructure of Cu₂O thin films produced in the acid electrolyte changes from a ring shape to a cubic shape with increasing DC density, and the microstructure of Cu₂O thin films produced in the alkaline electrolyte has a typical pyramid shape. The X-ray diffraction results show that Cu₂O thin films can be electrodeposited over a larger current domain than those deposited by a three-electrode system. The growth of Cu₂O thin films is examined under this domain, and the electrocrystallization process of such films is discussed taking into consideration the effect of current density on nucleation, cluster growth, and crystal growth.     

Defect formation in amorphous structures as revealed by computer simulation

Various types of defect in amorphous structures are discussed. It is shown that the formation, migration, redistribution and annihilation of defects in amorphous solids can be fully understood only by using computer simulation. More insight into the physics of amorphous thin films is given by the simulation of columnar growth and of the interface between a crystalline phase and an amorphous phase.     

Review of the fundamentals of thin-film growth

The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.     

SILAR法制备无机化合物薄膜

介绍了一种新的液相法薄膜制备工艺－SILAR法（连续离子层吸附反应法），该方法设备简单，成本低廉，成膜质量好。解释了它的非均相薄膜生长机理，对它的工艺参数影响以及研究应用情况进行了综合评述。指出了研究发展前景。     

K（Ta,Nb）O3薄膜中钙钛矿相的形成机理研究

研究了工艺参数和衬底材料对Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜生长的影响，研究表明钙钛矿相由焦绿石中间相转变而成，热处理时低速升温同样可以获得纯钙钛矿相的Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜，分析了（１００）ＳｒＴｉＯ３，（１００）ＭｇＯ单晶衬底上钙钛矿相的形成机理，并解释了在硅单晶和石英玻璃衬底上纯钙钛矿结构的Ｋ（Ｔａ，Ｎｂ）Ｏ３薄膜不易形成的原因。     

影响BiSrCaCuO110K相高温超导薄膜生长的因素

本文综述了后处理及原位生长ＢｉＣｒＣｕＯ高潮温超导薄膜的主要进展，重点讨论了影响１１０Ｋ相生长速率的工艺因素及提高Ｂｉ系高温超导薄膜质量的可能方法。     

The effect of growth parameters on CrN thin films grown by molecular beam epitaxy

In this paper, we report on the controlling of the effect of growth parameters such as substrate temperature and the ratio of Cr and N atoms on phase formation, surface morphology and crystallization of CrN(001) thin films grown by plasma-assisted molecular beam epitaxy on the MgO(001) substrate. The reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction and scanning tunneling microscopy are used to characterize the thin films grown under various conditions. High-quality CrN(001) thin films are achieved at a substrate temperature 430 °C with a low Cr deposition rate.     

Influence of substrate temperature on CeF3 thin films prepared by thermal evaporation

We have investigated the effect of substrate temperature on the structural, compositional and electrical properties of cerium fluoride thin films prepared by thermal evaporation method. The structure of cerium fluoride is hexagonal and the growth orientation changes with increase in substrate temperature. The substrate temperature favors the growth of vertical nanorods on the surface of the thin films. The compositional analysis confirms the formation of cerium oxyfluoride, leading to free fluoride ions. Electrical conductivity increases with increasing substrate temperature.