700V高压LDMOS器件瞬态失效机理研究

详细分析了700V横向双扩散金属氧化物半导体(LDMOS)器件瞬态失效机理的特性。研究表明触发器件寄生晶体管开启的失效功率不仅与器件内部温度有关,同时也与电场分布有关。器件温度影响寄生阱电阻和衬底电流的大小,而电场分布影响器件内部碰撞电离。器件温度与电场分布均与栅脉冲参数有密切关系。为了阐述栅脉冲参数对器件温度的影响,模拟仿真了器件的热响应曲线。     

场板结构对AlGaN/GaN HEMT温度场的影响北大核心CSCD

用Silvaco的ATLAS软件仿真研究了场板结构对AlGaN/GaN高电子迁移率晶体管(HEMT)的温度场分布的影响,分析了场板结构影响器件温度场分布的可能因素。模拟结果表明,加入场板结构后,器件沟道二维电子气浓度减小,电场分布发生变化,器件栅极漏侧边缘处的沟道峰值温度降低。加入栅场板和源场板结构后,场板边缘处都有一个新的温度峰值出现,器件的沟道温度峰值在加入单层和双层栅场板及源场板后由511K分别下降到487、468和484K,这种降低作用会随着栅场板层数的增加而有所增强。仿真结果说明场板结构通过改变AlGaN/GaN HEMT器件沟道载流子浓度和电场分布,影响器件内部的温度场分布。优化器件的场板结构是提高AlGaN/GaN HEMT的可靠性有效途径之一。     

钝化与场板结构对AlGaN/GaN HEMT电流崩塌的影响

由于AlGaN／GaNHEMT的几何结构以及很强的极化效应,栅漏区域的电场很大,以至于电子可以从栅隧穿到AlGaN表面．隧穿的电子在表面累积,导致栅下耗尽区的电子向漏端延伸,从而引起漏极电流的下降．文中采用应力测试方法,研究了未钝化、钝化以及场板三种结构的AlGaN／GaNHEMT的电流崩塌程度．实验结果表明,钝化隔断了电子从栅隧穿到AlGaN表面的通道,场板结构能够有效降低栅边缘电场,均减少了电子从栅隧穿到表面陷阱的几率,从而使虚栅的作用减弱,有效地抑制了电流崩塌效应．     

自热和陷阱对AlGaN/GaN高电子迁移率晶体管漏极瞬态响应的影响

本文利用二维数值仿真研究了自热和陷阱对AlGaN/GaN高电子迁移率晶体管漏极瞬态响应的影响。分析了脉冲作用下漏极电流的变化;结果表明温度是漏极电流滞后的主要原因。漏极电流达到稳态的时间决定于热时间常数,这里为80微秒。详细讨论了脉冲作用下沟道电子密度和陷阱捕获电子数目的变化情况。结果表明当电场发生突变时,缓冲层受主陷阱是漏极电流崩塌的主要原因。并且沟道电子密度随沟道温度上升而增大。     

高温及关态应力条件下GaAs pHEMT器件的性能退化研究

研究了高温和电学应力下砷化镓赝晶高电子迁移率晶体管的直流特性退化机理。高温下陷阱辅助发射电流引起器件关态漏电上升,而载流子迁移率的退化引起跨导降低;当温度达到450 K时,栅金属的沉降效应会导致跨导异常升高。进一步研究了不同温度下关态电学应力对器件性能退化的影响,结果与高温下栅沉降效应相吻合。     

AlGaN/GaN HEMT栅阶跃脉冲响应实验研究

通过对AlGaN/GaN HEMT漏极电流栅阶跃脉冲响应实验测试,发现栅脉冲相同时,HEMT开启时间在线性区随VDS增加而增加,而在饱和区随VDS增加而减小;在VDS一定时,器件开启时间随栅脉冲低电平的降低而增加。基于表面态电子释放过程与ID、VDS和阶跃脉冲之间关系的分析,提出了用快电子与慢电子释放两种过程来解释表面态电子弛豫,并建立漏极电流响应过程拟合算式。拟合得到与快、慢电子释放相关的时间常数分别为τ1=0.23s、τ2=1.38s,且拟合曲线与实验结果的最大误差不超过测试值的3%。该研究结果有助于电流崩塌机理的进一步探索。     

掺杂分布对EPROM编程的影响

在EPROM器件中,栅注入电流Ig对于Si表面的可动电子浓度n和电场E非常敏感。我们用二维电子温度器件模拟程序研究了n、E和Ig与掺杂分布的关系。 我们研究了沟长L=2(μm)、浮置栅氧化层厚度T_(ox)=400(?)的双栅EPROM器件。漏极写入电压采用17V,产生的漏电流为1.2mA。我们在一个等效的MOSFET上调节栅电压,以便使漏电流I_d与这一写电流相等,发现三种不同的沟道分布的浮置栅压(V_(gf))当量为12.8V、13.9V和16V。     

InGaAsP/InP激光器中的载流子泄漏及其阈值电流与温度的关系

利用一种新的激光—三极管对InGaAsP/InP双异质结激光器中的电子和空穴泄漏电流,首次进行了直接测量。表明在激光器正常运转条件下,存在着明显的电子泄漏,而空穴泄漏却小到可以忽略。电子泄漏电流随总注入电流的增大而迅速增大,并对温度敏感。如果能防止电子泄漏,则激光器的特征温度T_0可提高约30K。本文考虑到漂移电场及热载流子效应而提出的理论模型可解释实验事实。据此设计并制作了一种具有低阈值电流(20mA)及高特征温度(90K)的新结构激光器。     

本征光导红外探测器中的接触效应和体效应

本文分析了内电场对本征半导体量子光子探测器性能的影响,着重研究在77K温度下工作、组分值x=0.215的窄禁带Hg_(1-x)Cd_xTe器件。按照提出的一维模型,在n型光电导的阴极端可能出现对过剩少数载流子的局部阻档现象,从而导致电流响应率R_i的增大并使时间响应特性变差。此外,还讨论了探测器的电压响应率R_v与外加电场E的关系。实验表明:R_v/R_i之值与测得的探测器微分电阻值r_d是一致的。r_d与E的依赖关系是在高电场下电子的附加散射(HgCdTe中高迁移率的多数载流子)造成的。本文还介绍了对小面积的HgCdTe光导探测器进行测量的结果。在温度77K和波长10微米时,测出的电流响应率R_i超过3900安·瓦~(-1),电压响应率R_v大约为5×10~5伏·瓦~(-1)。     

表面态对GaN HEMT电流崩塌效应影响的研究

针对GaN HEMT电流崩塌物理效应,测试了各种条件下器件I-V特性。发现在栅脉冲条件下器件最大漏输出电流减小了23.8%,且随着栅脉冲宽度减小或周期增大而下降,并且获得了其输出电流与脉冲宽度W和周期T的定量关系;在漏脉冲测试条件下,器件输出电流有所增大,并随着脉冲宽度减小而缓慢增大。实验结果,可用器件栅漏之间表面态充放电的原理来解释所观察到的测试现象和电流崩塌物理。     

Electric-field control of electron interference effects in 2D semiconductor nanostructures with parabolic quantum wells

The possibility of the influence of a constant electric field on spatial reproduction effects for quantum-mechanical current density, which arise during interference of electron waves in 2D semiconductor nanostructures, is studied theoretically. It is found that, in structures comprising a narrow rectangular quantum well and a wide parabolic quantum well placed successively in the direction of propagation of an electron wave, the transverse current density distribution existing at the input of the wide quantum well is reproduced in this well with a certain accuracy in periodically repeated cross sections. The inhomogeneous current density distribution arises because of the interference of electron waves propagating in the wide quantum well simultaneously in different quantum-dimensional subbands. It is shown that it is possible to control these effects via the use of a constant electric field perpendicular to the axis of the structure in the region of the wide quantum well.     

BiFeO3薄膜中的电学输运性质

报道了铁酸铋薄膜样品在80K~300K温度范围直流电学输运性质的研究结果.利用同一前驱体不同老化时间,用化学溶液沉积法在钛酸锶衬底上制备出两种样品.在低阻样品中,低场下电流随电压变化遵从欧姆定律,电阻不随温度变化;而在中等强度外场下显示出肖特基二极管性质.在高阻样品中,低场下电流密度沿晶界分布,输运中的势垒能级为0.57eV;高场下电流的传输则遵从Frenkel-Poole模型,相关势垒能级0.12eV.低阻和高阻两种样品在85K温度下可测最大剩余极化分别为2.6μC/cm2和28.8μC/cm2.     

Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields

Multiple-period (Al, Ga)As/GaAs modulation doped heterojunction structures have been grown with molecular beam epitaxy. Electron mobilities of about 200 000 cm2/Vs at 10 K and 90000 cm2/Vs at 77 K with associated sheet carrier concentrations of about 2×1012 cm?2 have been observed. The current parallel to the interfaces for low electric fields was examined as a function of lattice temperature. The electron mobility has been observed to be strongly dependent on the strength of the electric field, and hot electron effects were observable at a field as low as 10 V/cm. To our knowledge this is the first report of hot electron phenomena in GaAs at such small fields.     

GMM-FBG光纤电流传感器温度补偿研究

为解决因超磁致伸缩材料(GMM)磁致伸缩系数 对温度敏感而影响GMM-FBG光纤电流传 感器响应准确度的问题,研究了温度补偿的方法,构建了GMM磁场与温度的多场耦合模型, 进行温度传感实验、电流的通断实验、及不同磁场方向上的电流响应实验,设计了十字形传 感探头,利用垂直磁场方向的GMM的磁场不敏感性进行电流传感器的温度补偿,提高了GMM- F BG光纤电流传感器响应准确度。结果表明:垂直于磁场方向上的传感器中心波长值变化量为 ±0.05 pm,可忽略磁场的影响,温补后的拟合曲线与通断实验的拟 合曲线残差平方和为0.011,几乎完全重合, 可消除温度对GMM-FBG电流传感器的影响,使电流测量更加精确,并实 现电流与温度的同时测量,可满足当代电力系统的应用需求。     

磁约束放电的CO激光激发系数

采用磁约束放电CO激光模型研究在外磁场作用下:(1)放电系统电子的能量分布变化;(2)电子对振动态CO分子的碰撞激发几率;(3)CO分子振动平动,振动转动激发系数与磁场、温度的关系.研究表明,外磁场使原电场在电场方向上对电子作用变小,电子能量减小,并导致电子对CO分子的碰撞激发几率系数下降,而对V-V,V-T激发系数影响不大.     

一种新型MOSFET静电场传感器

本文提出了一种非常有发展前途的低温漂固态电场传感器。此传感器是一种恒压惠斯顿电桥,它的电阻是由四个直接栅极SOI MOSFET器件。理论上证明这种传感器的输出信号电压与测量电场成正比,温度漂移等于零。实验结果表明,在300K温度下,传感器的分辨率为3.27 mV/KV/m,大气环境下的温度漂移相当于47V/m的电场,其远小于大气温度下相当于10,000V/m的电流漂移。     

A novel SOI MOSFET electrostatic field sensor

A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOI MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the electric field E, the temperature drift is about zero when the temperature is in the range from 200 to 400 K, and the doping concentration is in the range from 1×1014 to 1 × 1016 cm-3. The experiment results indicate that the resolution of the sensor is about 3.27 mV for a 1000 V/m electric field at 300 K, and the voltage drift by an amount is about 47 V/m field signal when the degree temperature is in the range from 300 to 370 K, which is much smaller than the current drift of a single MOSFET which is about 10000 V/m field signal.     

Electric potential mapping by thickness variation: A new method for model-free mobility determination in organic semiconductor thin films

Charge transport, with charge carrier mobility as main parameter, is one of the fundamental properties of semiconductors. In disordered systems like most organic semiconductors, the effective mobility is a function of the electric field, the charge carrier density, and temperature. Transport is often investigated in a space-charge limited current (SCLC) regime in thin film single carrier devices, where an electric current is driven in the direction perpendicular to the surface. Direct evaluation of the current–voltage characteristics, however, is problematic, because parasitic contributions from injection or extraction barriers can falsify results.     

THE SIMULATION FOR MICROWAVE PLASMA BREAKDOWN PROCESS

From the fluid model, the plasma is an isotropic medium. First, it is obtained that the microwave field in a cylindrical cavity filled with plasma, where the microwave comes from vacuum cylindrical waveguide. Coupling with fluid equations for the electron and ion motion, the microwave discharge courses are calculated , The results show that the curves of ion and electron density distributions are similar as the curves of electric field intensity distribution. Abo, a critical electron density is exist. Above this density, microwave field will damp rapidly, this makes the gas ionization mainly happening on the surface.     

Mechanism of negative transconductance in heterostructurefield-effect transistors

In most heterostructure field-effect transistors the drain current at very large gate voltages drops with an increase of the gate voltage leading to a negative device transconductance. Based on the analysis of the gate and channel current distributions in such devices, it is shown that the negative transconductance at large gate currents is related to the dramatic change in the electric field distribution in the channel and to the saturation of the density of the two-dimensional electron gas in the channel. Under such conditions the electric field increases at the source side of the channel where the gate current primarily flows. When the electric field at the source side exceeds the electric field at the drain side of the channel, the device transconductance becomes negative. This is related to a higher voltage drop near the source side of the channel causing a partial depletion in the channel