双波长电光调Q Nd∶YAP脉冲激光在LBO中的和频作用

文章介绍了Nd∶YAP电光调Q脉冲激光器发射的1079. 5nm与1341. 4nm双波长激光在LBO非线性晶体中实现和频作用,在输入调Q 激光能量为149mJ 时,获得输出能量为 12mJ、脉宽为45ns、峰值功率为0. 2667MW的598. 1nm黄色激光,能量转换效率大于8%。     

高能量LD泵浦Nd∶YAG板条激光器

为了获得高能量532 nm激光输出,利用电光调Q晶体LN,通过调Q同步驱动技术和LD侧面泵浦板条技术,获得高能量窄脉宽1.06 μm激光输出,泵浦非线性晶体KTP进行频率变换,实现高能量532 nm激光输出。在电源输入电流120 A、调Q驱动频率10 Hz的条件下,获得264 mJ的1.06 μm激光。利用该1.06 μm激光泵浦KTP获得最高能量为185 mJ的532 nm 绿光激光输出,1.06 μm到532 nm的转化效率为70%。实验结果表明:通过电光调Q技术和LD侧面泵浦技术,可以实现高能量窄脉宽1.06 μm激光输出,泵浦KTP可获得高能量绿光激光输出。     

670.7 nm电光调Q Nd:YAP/LBO激光器

介绍了一台高峰值功率的脉冲红光固体激光器.通过激光晶体和非线性光学晶体的对比与选择,采用掺杂浓度为1 at%的b-轴切割的Nd:YAP晶体作为激光增益介质,并通过电光调Q,输出1341.4 nm波长的激光脉冲,再选用Ⅰ类临界相位匹配三硼酸锂(LBO)作为倍频晶体,其匹配角度为θ=86.13°,φ=0°,进行腔外倍频的实验研究.当1341.4 nm电光调Q的基频激光输出能量为126 mJ时,获得51.1 mJ、脉宽为40 ns的670.7 am脉冲倍频红光输出,二次谐波的能量转换效率为40.5%.由于采用电光调Q运行模式,脉宽可窄到40 ns,670.7 nm红光的峰值功率高达1.277 MW,大大拓宽了在激光美容、医学治疗等领域的应用.     

1319nm Nd:YAG脉冲电光调Q激光器的研究

为了研究脉冲输出波长为1319nm的Nd:YAG激光器,通过分析Nd:YAG激光介质的辐射跃迁能级,采用镀制高选择性介质膜的方法抑制1064nm等其它波长的起振,最终实现1319nm激光单脉冲输出。实验中采用闪光灯抽运、水冷Nd:YAG激光器,KD*P调Q,平平腔结构,获得1319nm激光静态输出能量340.9mJ,动态输出76.8mJ,重频1Hz,脉宽17ns,束散角2.7mrad。结果表明,通过镀制高选择性介质膜的方法可以实现1319nm激光调Q脉冲输出。     

LD脉冲抽运的被动调Q Nd:YVO4激光器的研究

报道在LD脉冲抽运的Nd：YVO4激光器中插入Cr^4＋：YAG,获得稳定的调Q激光输出。在输出镜透过率T=10％时,插入Cr^4＋：YAG的调Q阈值为19．1mJ,在抽运能量为34mJ时,测得脉冲宽度为38ns,输出能量为0．34mJ。实验研究了脉冲宽度随抽运能量的变化,并比较了不同透过率输出镜条件下Cr^4＋：YAG调Q的输出能量和调Q效率随抽运能量的关系。实验还把Cr^4＋：YAG换成BDN染料片,获得了比Cr^4＋：YAG调Q还窄的10ns左右的脉冲,并根据Cr^4＋：YAG和BDN染料片的调Q机理对一些实验现象作出合理的解释。     

调Q脉冲紫外光Nd:YAG激光器的研究

研制了一种大能量紫外光脉冲Nd：YAG激光器。由漫反射聚光腔、VRM非稳腔、电光调Q输出高光束质量基频激光;采用Ⅱ类KTP晶体倍频与Ⅱ类LBO晶体混频,获得紫外355nm激光输出;单脉冲能量达140mJ,光束发散角1．5mrad,1064～355nm光一光转换效率达22．2％,重复频率5Hz,脉宽9．7ns,光束直径6．5mm。     

Nd：YCOB晶体的脉冲激光特性

利用氙灯泵浦Nd:Ca4YO(BO3)3晶体获得了1．06－0．53μm的自倍频激光输出,阈值泵浦能量小于3．0J,自由振荡自倍频绿光最大输出为1．08mJ。利用脉冲调Q染料激光泵浦该晶体,获得最大自由频绿光输出为1．03mJ,阈值泵浦能量小于2．00mJ。     

Tm,Ho声光调Q激光系统理论与实验研究

利用激光速率方程理论,对Tm,Ho激光系统计算预测得出最佳耦合输出透过率和调Q激光脉冲宽度.实验采用Tm, Ho:LuLF为增益介质,三向侧面泵浦,环形腔声光调Q.选用透过率20%和30%的输出镜作对比.在透过率20%耦合输出时,得到调Q激光脉冲能量最大为58.0 mJ,对应光光转换效率为1.45%;在透过率30%耦合输出时,得到调Q激光脉冲能量最大为62.9 mJ,对应光光转换效率1.57%,并且获得了最大动静比48.7%.激光脉冲宽度在注入能量3.25 J时为417.2 ns.与理论计算结果较为一致.     

电光调Q 1064nm/532nm脉冲激光器

报道了一种用于产生THz波的电光调Q脉冲激光器,重复频率为1Hz、10Hz,输出1064nm、532nm可方便转换.当腔长310mm,输入能量为16J时,输出的1064nm调Q脉冲能量210mJ,电光转换效率1.3%,平均脉宽13ns,532nm脉冲能量110mJ,倍频效率50%,脉宽9~12ns.并对实验结果进行了分析和讨论.     

溶胶-凝胶和聚合物固体激光染料的特性

采用溶胶-凝胶(sol-gel)和聚合物聚甲基丙烯酸甲酯(PMMA)为基质,Pyrromethene-567(PM567)为增益介质,调Q倍频Nd:YAG激光为抽运源,实现了宽带固体染料脉冲激光输出。溶胶-凝胶基质和聚合物基质输出谱线中心分别为560nm和561nm,半峰全宽(FWHM)分别为9nm和8nm;采用透过率为50%的输出镜,激光斜率效率分别为43%和26.3%,最高输出能量分别为13mJ和99mJ。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.