卷对卷制备柔性硅基薄膜电池集成串联组件的研究

卷对卷制备出聚酰亚胺(PI)衬底柔性 硅(Si)基薄膜太阳电池集成串联组件。对卷对卷制备柔性Si基薄膜电池集成串联的优势 进行了分析,讨论了制约柔性薄膜电 池集成串联组件的主要因素;设计了两种柔性薄膜电池集成串联组件结构;进行了柔性 薄膜电池集成串联组件研制,并进行了对比分析。采用卷对卷工艺制备了非晶硅(a-Si)电 池,采用 卷对卷激光刻划、卷对卷丝网印刷与卷对卷精密点胶实现集成串联,形成柔性薄膜电池集成 串联组件,柔性a-Si单结集成串联组件全面积转换效率达到5.96％(AM1.5,全面积为117.3 cm²)。     

聚酰亚胺衬底柔性非晶硅薄膜电池集成串联组件的研究

研究了柔性Si基薄膜太阳电池集成串联组件的制备与关键技术。对导电栅线在柔性薄膜太阳电池集成串联组件中的重要性进行了模拟计算,对柔性薄膜太阳电池激光刻蚀进行了理论分析与实验优化,并对柔性Si基薄膜太阳电池集成串联组件进行了设计与研制。在聚酰亚胺(PI)衬底上,通过卷对卷磁控溅射与卷对卷等离子增强化学气相沉积(PECVD)依次沉积复合背反射层Ag/ZnO、Si基薄膜层和透明导电膜层,采用激光刻蚀与丝网印刷工艺相结合实现集成串联,制备了柔性非晶Si(a-Si)薄膜太阳电池集成串联组件。柔性单结集成串联组件有效面积转换效率达到了4.572%(AM0),开路电压Voc=5.065V,填充因子FF=0.552。     

AZO透明导电薄膜的工艺优化及其在叠层硅薄膜太阳能电池上的应用

本文利用直流磁控溅射法在玻璃衬底上制备了低电阻率、高透光率的掺铝氧化锌（ZnO:Al）透明导电薄膜,经过稀盐酸腐蚀制绒后,作为前电极应用于叠层硅薄膜太阳能电池。详细讨论了溅射和腐蚀工艺参数对薄膜光电性能的影响。优化工艺制备出的AZO薄膜具有高散射能力的表面形貌,其透光率在81%以上（380~1100nm范围）,方块电阻和雾度分别为11Ω/□和41.3%。AZO薄膜作为前电极应用于a-Si:H/μc-Si:H双结薄膜太阳能电池,小面积电池的初始转换效率达到了12.5％。     

大面积柔性硅基薄膜电池集成串联组件

采用卷对卷工艺制备了叠层非晶硅/非晶硅锗(a-Si/a-SiGe)电池,采用激光刻划与丝网印刷实现集成串联,形成柔性薄膜电池集成串联组件。研究了SiGe电池渐变带隙、柔性衬底nip倒结构激光刻划、反向脉冲电治疗,并用以改善柔性薄膜电池集成内联组件性能。集成组件有5个子电池内部串联而成,有效面积转换效率达5.424%(AM0,100.1cm2),开路电压达7.156V。     

PET塑料衬底非晶/微晶硅叠层太阳电池研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在125℃的低温条件下,沉积了一系列不同厚度的本征微晶硅(μc-Si)薄膜。对材料的光电特性和结构特性的测试结果表明,低温条件下制备的μc-Si薄膜具有较厚的非晶孵化层,并且纵向结构演变较为明显。采用梯度H稀释技术,在沉积过程中不断降低H稀释度,改善了μc-Si薄膜的纵向均匀性。将此技术应用于非晶硅(a-Si)/μc-Si叠层电池的μc-Si底电池,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备出初始效率达到6.0%的a-Si/μc-Si叠层电池。     

PET柔性衬底上低温沉积ITO薄膜性能的研究

采用反应热蒸发的方法,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备In2O3:Sn(ITO)薄膜.鉴于塑料对温度的敏感性,详细研究了衬底温度对其上沉积的ITO薄膜的微观结构及光电性能的影响,在低温条件下(Ts=140℃)获得电阻率为7.52×10-4Ωcm,可见光范围内的透过率大于80%和结构特性良好的薄膜,并将其应用于PIN型太阳电池的前电极,获得了转换效率为4.41%的柔性非晶硅(a-Si)薄膜太阳电池.     

柔性衬底硅薄膜太阳电池中ZGO薄膜的应用

在室温下,采用孪生对靶直流磁控溅射工艺,在玻璃衬底上制备出高质量的Ga掺杂ZnO(ZnO:Ga)透明导电膜。研究了薄膜厚度对薄膜的结构、光学及电学特性的影响。制备的ZnO:Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向。随着薄膜厚度的增加,衍射峰明显增强,晶粒增大。优化反应条件,薄膜的电阻率达到4.69×10-4Ω.cm,在可见光范围内平均透过率达到了85%以上。将不同厚度的ZnO:Ga薄膜(350～820 nm)在柔性聚酰亚胺衬底nip非晶硅(a-Si)薄膜太阳电池中,随厚度的增加,电池的填充因子和效率都得到了提高,得到聚酰亚胺衬底效率7.09%的a-Si薄膜太阳电池。     

CIGS薄膜太阳能电池结构分析

阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括CIGS半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及CIGS薄膜的Na掺杂等。分析了多元共蒸发法、硒化法沉积CIGS吸收层以及化学水浴法沉积Cd S缓冲层的具体工艺和特征,介绍了柔性CIGS薄膜太阳能电池的卷对卷技术,最后就CIGS薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。     

基于柔性衬底的磁声表面波谐振器

针对在柔性衬底上制备非晶软磁薄膜的技术难题,该文研究并制作了一种基于柔性聚酰亚胺(PI)衬底的磁声表面波(MSAW)谐振器。通过在柔性PI衬底上溅射沉积了非晶FeCoSiB磁致伸缩薄膜和ScAlN压电薄膜,光刻制备了叉指电极,并形成IDT/ScAlN/FeCoSiB/PI层状结构,成功获得了柔性MSAW谐振器。采用X线衍射(XRD)和原子力显微镜(AFM)分析了薄膜的结构和表面形貌及利用振动样品磁强计(VSM)和短路微带线法测试了FeCoSiB薄膜的静态磁性和高频磁谱特性,最后在探针台上利用矢量网络分析仪对器件进行测试,并与COMSOL仿真结果进行对比。实验结果表明,该MSAW器件有两个谐振峰,其中瑞利波出现在28.32 MHz,兰姆波出现在93.69 MHz。     

NIP型非晶硅薄膜太阳能电池的研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术制备非晶硅(a-Si)NIP太阳能电池,其中电池的窗口层采用P型晶化硅薄膜,电池结构为Al/glass/SnO2/N(a-Si:H)/I(a-Si:H)/P(cryst-Si:H)/ITO/Al.为了使P型晶化硅薄膜能够在a-Si表面成功生长,电池制备过程中采用了H等离子体处理a-Si表面的方法.通过调节电池P层和N层厚度和H等离子体处理a-Si表面的时间,优化了太阳能电池的制备工艺.结果表明,使用H等离子体处理a-Si表面5 min,可以在a-Si表面获得高电导率的P型晶化硅薄膜,并且这种结构可以应用到电池上;当P型晶化硅层沉积时间12.5 min,N层沉积12 min,此种结构电池特性最好,效率达6.40%.通过调整P型晶化硅薄膜的结构特征,将能进一步改善电池的性能.     

掺Al ZnO柔性透明导电薄膜研究进展

柔性透明导电薄膜ZAO具有优异的光电性能且资源丰富、成本低、对环境无污染,成为当前的研究热点.总结了近年来对柔性衬底材料处理的方法,分析了柔性透明导电薄膜的研究历史和现状.介绍了柔性透明导电薄膜ZAO的结构、光电特性、典型制备方法和应用前景.评述了柔性ZAO薄膜的研究现状,并对其近期研究和应用工作进行了展望.     

柔性AMOLED的技术现状与进展

目前已经有商业化的AMOLED产品应用在MP3、手机上,而采用柔性基板的AMOLED也正在研制中,但真正实现商业化还面临诸多技术难题,如柔性衬底处理技术,柔性基板的TFT制备方法,有机薄膜蒸镀和薄膜封装等。具体分析了相关问题的处理方法和技术现状。指出使用塑胶衬底,开展有机氧化物TFT制备的发展思路。提示我国在有机薄膜蒸镀和薄膜封装领域有较大的潜在机会。     

基于ZnO压电薄膜的柔性MEMS超声波换能器

该文提出一种柔性的微机电系统(MEMS)超声波器件。该器件由下电极、ZnO薄膜、上电极及聚酰亚胺柔性基底构成。其制作过程简单,采用直流磁控溅射制作上、下电极,反应射频磁控溅射制作氧化锌压电薄膜。薄膜间粘合牢固,可反复弯折。SEM和XRD结果表明,氧化锌薄膜厚度可达4~8μm,具有高度(002)择优取向的柱状晶结构。根据XRD所得的结果计算了薄膜平均晶粒尺寸和内应力大小,结果表明,晶粒尺寸约为22nm,薄膜内压应力约为-1.248 4GPa。利用激光多普勒测得其共振频率约为5MHz。同时,研究发现,较厚的ZnO薄膜使振幅变大,导致振动品质因数(Q)值增加。     

Helium permeation as a fast quality indicator for barrier properties of solar cell encapsulates

The advent of flexible electronic devices and flexible thin‐film photovoltaic modules increases the need for transparent and flexible high‐barrier films. Conventional methods for measuring the barrier properties of such films are costly and time consuming. In our work, we present a method where we correlate water vapor and helium transmission rate measurements on strained barrier films with thin‐film solar module performance. We show that the detected properties correlate well with the performance of a CIGS mini module exposed to damp‐heat environment. The critical strain limit for a substantial decrease in barrier properties was identified for an ETFE‐based barrier film incorporating an inorganic barrier layer. It was found that the detection of the helium transmission rate provides a fast and reliable way to identify damage to barrier films and is therefore suitable as means for quality control or incoming goods inspection.     

A review of floating photovoltaic installations: 2007–2013

The paper gives a review of the various projects that have been realised in throughout the years. These have all been in enclosed water bodies such as reservoirs, ponds and small lakes. The main motivation for the floating photovoltaic (PV) panels was the land premium, especially for agricultural sites were the land was more valuable for growth of the crops (in these cases, grapes because the sites were wineries). The PV panels of the existing projects are mounted on a rigid pontoon structure and vary between horizontal and tilted installations. Future concepts proposed for marine and large lacusterine sites are envisaged to incorporate laminated thin film PV, which would allow the structure to be flexible and able to yield with the oncoming waves, and submergible arrays, which would be submerged in harsh weather conditions. Interest and research has been developing in this niche field throughout the years and has currently reached the megawatt scale with even bigger plans for the future. Copyright © 2014 John Wiley & Sons, Ltd.     

Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer

Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm^?2), and good insulating properties (leakage current densities as low as 10^?6 A cm^?2). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.     

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Flexible floating‐gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.     

基于制冷型探测器的低热耗薄膜导电带研究

对制冷型探测器热负载的影响因素进行研究。针对内引线热传导这一主要因素进行深入探讨,提出了以聚酰亚胺薄膜为基底材质的柔性导电带方案,并给出了该柔性导电带详细制备技术参数。经检测和使用验证,该低热耗薄膜导电带可以在80K制冷型探测器中实现可靠电信号连接,对降低制冷型探测器热负载贡献明显。     

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Flexible transparent display is a promising candidate to visually communicate with each other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have attracted attention as a component for transparent display by its high performance and high transparency. The critical issue of flexible oxide TFTs for practical display applications, however, is the realization on transparent and flexible substrate without any damage and characteristic degradation. Here, the ultrathin, flexible, and transparent oxide TFTs for skin‐like displays are demonstrated on an ultrathin flexible substrate using an inorganic‐based laser liftoff process. In this way, skin‐like ultrathin oxide TFTs are conformally attached onto various fabrics and human skin surface without any structural damage. Ultrathin flexible transparent oxide TFTs show high optical transparency of 83% and mobility of 40 cm² V^?1 s^?1. The skin‐like oxide TFTs show reliable performance under the electrical/optical stress tests and mechanical bending tests due to advanced device materials and systematic mechanical designs. Moreover, skin‐like oxide logic inverter circuits composed of n‐channel metal oxide semiconductor TFTs on ultrathin, transparent polyethylene terephthalate film have been realized.     

Progress in flexible perovskite solar cells with improved efficiency

Perovskite solar cell has emerged as a promising candidate in flexible electronics due to its high mechanical flexibil-ity,excellent optoelectronic properties,light weight and low cost.With the rapid development of the device structure and mater-ials processing,the flexible perovskite solar cells (FPSCs) deliver 21.1％ power conversion efficiency.This review introduces the latest developments in the efficiency and stability of FPSCs,including flexible substrates,carrier transport layers,perovskite films and electrodes.Some suggestions on how to further improve the efficiency,environmental and mechanical stability of FPSCs are provided.Specifically,we considered that to elevate the performance of FPSCs,it is crucial to substantially improve film quality of each functional layer,develop more boost encapsulation approach and explore flexible transparent electrodes with high conductivity,transmittance,low cost and expandable processability.