NiO/Co/Cu/Co自旋阀中反铁磁NiO层钉扎作用的研究

本文通过研究不同方向外加磁场下ＮｉＯ７０ｎｍ／Ｃｏ ５．５ｎｍ／Ｃｕ ３．５ｎｍ／Ｃｏ ５ ．５ｎｍ 自旋阀结构中磁电阻的变化,探讨了ＮｉＯ 反铁磁层对相邻的Ｃｏ 层的钉扎作用。研究发现,材料中的钉扎方向是唯一确定的,只有沿着钉扎方向反向增大外场,才能获得高的巨磁电阻效应和磁灵敏度。     

NiO／Co／Cu／Co自旋阀中反铁磁NiO钉扎作用的研究

本文通过研究不同方向外加磁场下ＮｉＯ７０ｎｍ／Ｃｏ５．５ｎｍ／Ｃｕ３．５ｎｍ／Ｃｏ５．５ｎｍ自旋阀结构中磁电阻的变化,探讨了ｉＯ反铁磁层对相邻的Ｃｏ层的钉扎作用。研究发现,材料中的钉扎方向是唯一确定的,只有沿着钉扎方向增大外场,才能获得高的巨磁电阻效应和磁灵敏度。     

铁磁/反铁磁双层膜中的磁化性质与界面微结构

采用Monte Carlo模拟方法,通过反铁磁层中非磁性掺杂方式调节铁磁层与反铁磁层界面微结构,讨论了其界面微结构对体系的磁滞回线的不对称性、交换偏置场及矫顽场的影响.模拟结果显示:在同一掺杂浓度下,体系的磁滞回线的不对称性及交换偏置场强烈地依赖于掺杂方式,但矫顽场几乎不受影响,其相应的温度特性亦依赖于掺杂方式.它表明铁磁/反铁磁双层膜体系中的磁滞回线的不对称性以及交换偏置场与其界面微结构密切相关,同时实验上人们可通过界面微结构的改变获得交换偏置场大、矫顽场小且热稳定性好的自旋阀结构.     

NiO/CoFe双层膜的交换机制研究

通过改变制备NiO薄膜的氩气压和衬底材料,研究了NiO的结构、表面粗糙度对NiO/CoFe双层膜交换耦合场Hex的影响.实验表明完全自旋未补偿面与交换耦合场的产生没有直接联系,但交换耦合场Hex与界面状况密切相关.增大NiO的表面粗糙度会使交换耦合场Hex减小.应用随机场理论在考虑了实际界面存在的粗造度、杂质和缺陷等实际情况下,正确地预测了交换耦合场的数量级,而且对交换耦合场与铁磁层厚度tFM、反铁磁层厚度tAFM以及交换耦合场的温度特性等实验结果做出了合理解释.并应用随机场模型对反铁磁/铁磁双层膜中铁磁层矫顽力Hc与铁磁层厚度tFM的关系进行了定量计算,发现矫顽力Hc与铁磁层厚度1/tFM成正比,这一结果表明理论计算与我们的实验数据符合得很好.     

硬磁/反铁磁交换耦合对反铁磁FeMn稳定性影响研究

采用磁控溅射方法在SiO2基体上制备了FePt/FeMn/NiFe/Ta多层膜样品,通过FeMn/NiFe双层膜交换偏置的变化研究了硬磁FePt不同磁化状态对反铁磁层FeMn的影响。实验表明,磁化了的L10相FePt能使FeMn在较薄的情况下(4.5nm)对NiFe产生比较强的交换偏置;而未被磁化的FePt对FeMn/NiFe交换偏置影响并不明显。认为更薄的反铁磁层对另外的铁磁层产生交换偏置是由于硬磁与反铁磁的界面交换耦合作用能增强反铁磁的稳定性。     

巨磁电阻隔离器中自旋阀材料及结构研究

为得到矫顽力和工作偏置点都合适的自旋阀结构,实验中采用NiFe/CoFe复合层作为自旋阀自由层并通过调节NiFe和CoFe的厚度来控制自旋阀的矫顽力和灵敏度,并通过调节自旋阀中金属隔离层的厚度来控制自旋阀工作偏置点的位置。结果表明得到合适的自旋阀结构。在此基础上,采用光刻剥离工艺,制作两组折线形自旋阀巨磁电阻条样品,其磁化方向分别沿电阻条的长轴和短轴。测试结果表明磁化方向沿电阻条长轴的样品,矫顽力大小和工作偏置点稳定,灵敏度在电阻条宽度很小时有所减小;磁化方向沿电阻条短轴的样品,矫顽力和灵敏度大小稳定,而工作偏置点的位置随着电阻条宽度的减小逐渐偏离自旋阀钉扎场的方向。     

交换耦合软/硬磁双层膜体系磁动力学性质的研究

基于Laudau-Lifshitzt方程,在一维原子链模型的框架内研究了交换耦合软/硬磁双层膜体系的磁动力学性质,得到了软磁层在磁反转前处于一致磁结构和交换弹性磁反转过程中处于螺旋磁结构时的本征自旋波模式的频率及其空间分布特点,以及自旋波色散关系曲线。研究表明,软磁层的反磁化机制与自旋波的软模现象有密切关系,一阶自旋波模式的软化诱导了软磁层的磁反转,且磁反转的形式与一阶自旋波模式的空间分布状态相关。由磁动力学方法得到的磁反转临界场与近似的解析解得到的结果一致。     

磁性材料交换偏置效应研究进展

磁性材料中交换偏置效应对自旋电子学的基础研究和应用发展起到了至关重要的作用,因此也成为无机非金属材料的研究中最为活跃的领域之一.由于交换偏置效应来源于铁磁/反铁磁界面处的交换耦合作用,所以相关的研究工作主要集中在铁磁/反铁磁双层膜体系;在一些基态为反铁磁的类钙钛矿锰氧化物中,由于存在相分离形成的铁磁团簇也观察到了交换偏置现象;此外,很多磁性材料纳米化后也出现了交换偏置效应.主要从这3方面介绍了在新材料体系中交换偏置效应的研究进展,以及交换偏置效应在自旋相关器件中的应用,提出了一些研究中面临的挑战并对发展方向作出展望.     

CoFe/Cu/CoFe/IrMn自旋阀结构多层膜磁化反转过程的研究

通过高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75 Fe25(5nm)/Cu(2.5nm)/Co75Fe25(5nm)/Ir20 Mn80(12nm)/Ta(8nm)的顶钉扎自旋阀结构多层膜,研究了磁场循环次数、反向饱和场等待时间和磁场变化率对自旋阀结构多层膜磁化反转过程的影响.结果表明,磁场循环次数和反向饱和场等待时间对自由层的磁化反转过程没有影响,而在被钉扎层中出现了练习效应和时间效应;磁场变化率对被钉扎层和自由层的前、后支反转场的影响变化趋势相似,但反铁磁层对被钉扎层的反转有一定的影响.     

(Ga,Mn)As磁电输运性质的研究进展

综述了Ⅲ-Ⅴ族稀磁半导体(Ga,Mn)As磁电性质的研究进展,尤其是(Ga,Mn)As单层膜和多层膜结构的磁电输运性质的详细研究状况。关于(Ga,Mn)As的结构与物理性质的信息可由单层膜的反常霍尔效应、平面霍尔效应、电阻对温度的依赖关系与磁阻各向异性等磁电输运性质测量得到;而多层膜中观察到的自旋阀效应、自旋相关散射与层间交互耦合等现象,对加深稀磁半导体的基本物性认识、拓展稀磁半导体的实际应用空间非常重要。最后总结并展望了(Ga,Mn)As未来的发展趋势。     

Positive and negative exchange bias in IrMn/NiFe bilayers

We present the observation of double shifted hysteresis loops in IrMn/NiFe bilayer structures. The bilayer structures were fabricated using high vacuum DC magnetron sputtering system. The hysteresis loops of the as deposited samples show the double shifted loops at NiFe layer thicknesses 5 nm and 6 nm, whereas the IrMn layer thickness was kept constant at 15 nm. The results were interpreted as the contribution of both positive and negative exchange bias fields. We suppose that this phenomenon is occurring due to the ferromagnetic (FM) layer exchange coupled with the antiferromagnetic (AFM) layer in two different magnetization directions. The ferromagnetic coupling of the interface spins in some regions of the film generates the hysteresis loop shift toward negative fields and antiferromagnetic coupling toward positive fields in the other regions. The double shifted hysteresis loops disappeared after magnetic field annealing of the samples above Neel temperature of the AFM layer. The X-ray diffraction patterns of the sample show the IrMn (111) crystalline growth necessary for the development of exchange bias field in this system. The correlation between the Magnetic Force Microscopy (MFM) domain structures of the as deposited sample and the magnetization reversal process of the double shifted hysteresis loops were discussed. The results suggest that the larger multidomain formation in the AFM layer with different magnetization directions was responsible for the positive and negative exchange bias fields in IrMn/NiFe bilayer samples.     

Magnetic properties and first-order magnetic phase transition in single crystal FeRh thin film

To understand the mechanism of first-order magnetic phase transition in ordered FeRh thin films, the magnetic properties and first-order antiferromagnetic (AFM)–ferromagnetic (FM) phase transition behavior of single-crystal FeRh thin film are investigated in detail. The first-order magnetic phase transition is seen at a temperature of around 120 °C during heating and 145 °C cooling processes in perpendicular direction. The M–H loops measured isothermally amidst the AFM–FM transition regime show an opening at high magnetic field, which indicate a reversible AFM–FM transition induced by magnetic field. The clusters of the FM phase nucleate in the AFM matrix heterogeneously and vice versa during the first-order phase transition and the mechanism of nucleation and growth kinetics of the first-order magnetic phase transition in ordered FeRh thin film is quite similar to that of the crystallization of solids described by the Avrami model.     

Thickness and Temperature Dependence of Exchange Bias in Co/CoO Bilayers

The effects of the ferromagnetic (FM) Co layer thickness on magnetic anisotropies and exchange bias (EB) properties of Co/CoO bilayers have been investigated by using ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) techniques. The temperature and thickness dependence of EB were studied in temperature range of 4?C320?K. FMR and VSM measurements show that Co/CoO bilayers exhibit negative exchange bias just below the blocking temperature (T _B). Room-temperature in-plane FMR measurements reveal that the Co layer was epitaxially grown on MgO substrate with four-fold magneto-crystalline symmetry. The data also show that the easy axis of magnetization is in the film plane and parallel to the ??110?? crystallographic directions of MgO substrate in all samples.     

Peculiarities of the magnetization reversal in heterophase nanocomposite permanent magnets

We have studied the process of magnetization reversal in a thin-film Fe/Sm₂Co₇ exchange coupled bilayer structure under the action of an in-plane external field. An analysis of the local magnetization changes, as measured using the magnetooptical indicator film technique, showed that the magnetization reversal proceeds by inhomogeneous rotation of the magnetic moments in Fe and SmCo layers, both in plane and in the perpendicular direction. It is established that, because of the exchange interaction between layers, the magnetization reversal along the easy axis in the entire structure is determined primarily by the formation of exchange-induced spin helices and domain walls in the magnetically soft layer, whereas the magnetization reversal at an angle of α with respect to the easy axis plays a significant role in the magnetically hard layer and becomes dominating for α=90°.     

Magnetic properties of Ni-NiO (ferromagnetic-antiferromagnetic) nanocomposites obtained from a partial mechanochemical reduction of NiO

The magnetic properties of ferromagnetic (FM)-antiferromagnetic (AFM), Ni-NiO, nanocomposites obtained from a reactive ball milling reduction of NiO in H2 atmosphere have been studied. The formation of ferromagnetic Ni from antiferromagnetic NiO can be accurately followed by the increase of the saturation magnetization. The microstructure of the nanocomposite, consisting of FM Ni nanoparticles embedded in an AFM NiO matrix leads to exchange bias effects, i.e., loop shifts and coercivity enhancement, after field cooling from above the Néel temperature of NiO.     

Rotation of the magnetization vector of a monodomain particle under the action of a high-frequency field pulse

We obtained a numerical solution of the modified Hilbert equation describing rotation of the magnetization vector in a high-frequency field of large amplitude. Based on this solution, we have studied rotation of the magnetization vector of a spherical ferromagnetic monodomain particle, possessing a cubic anisotropy, from the direction parallel to an easy magnetization axis to the perpendicular direction under the action of a high-frequency magnetic field pulse. The amplitudes and the interval of frequencies of the magnetic field capable of rotating the particle magnetization vector are determined.     

E‐field Control of the RKKY Interaction in FeCoB/Ru/FeCoB/PMN‐PT (011) Multiferroic Heterostructures

E‐field control of antiferromagnetic (AFM) orders is promising for the realization of fast, compact, and energy‐efficient AFM applications. However, as the AFM spins are strongly pinned, the E‐field control process is mainly based on the exchange bias regulation that usually confines at a low temperature. Here, a new magnetoelectric (ME) coupling mechanism for the modulation of AFM orders at room temperature is explored. Based on the FeCoB/Ru/FeCoB/(011) Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ (PMN‐PT) synthetic antiferromagnetic (SAF) heterostructures, the external E‐field generates relative magnetization switching in the two ferromagnetic (FM) layers, leading the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction tuning. This voltage‐induced switching behavior can be repeated in a stable and reversible manner for various SAFs, which is a key challenge in the E‐field control of AFM coupling and is not resolved yet. The voltage‐induced RKKY interaction changes by analyzing the dynamic optical and acoustic modes is quantified, and with first‐principles calculations, it is found that the distortion of the Fermi surface by the lattice reconstruction is the key of the relative magnetization switching and RKKY interaction modulation. This voltage control of the RKKY interaction in ME heterostructures provides an easy way to achieve the next generation of AFM/FM spintronic applications.     

Magnetic characterization of MnPt/CoFe bilayers using the MOKE technique

The performance of magnetoresistive devices (spin valves, tunnel junctions), made of two ferromagnetic (FM) layers and separated by a non-magnetic spacer, rely on the existence of two well separated resistance states. For this to occur, one of the FM layer is deposited just adjacent to an antiferromagnetic (AFM) layer. Due to the exchange interaction at the AFM/FM interface, the reversal of the magnetization (M) of such FM-pinned layer occurs at a high applied magnetic field. The magnetization of the other FM layer reverses almost freely when a small magnetic field is applied. Here we study the exchange bias effect in the MnPt (t)/CoFe (50 Å) system, using the Magneto-Optical Kerr Effect (MOKE) and domain imaging techniques. The exchange (H_E) and coercive (H_c) fields increase with increasing AFM thickness, saturating for t > 200 Å (H_E ≈ 670 Oe and H_c ≈ 315 Oe). Furthermore, we observe that the value of the exchange field is almost independent of the applied magnetic field sweeping rate (up to ≈ 300 kOe/s). Domain imaging allowed us to conclude that magnetization reversal in the studied system proceeds essentially by coherent magnetic moment rotation.     

The effect of stress on the magnetic properties of sol–gel-derived Pr0.9Ca0.1MnO3 thin films

The Pr_0.9Ca_0.1MnO₃ (PCMO) thin films prepared by sol–gel method suffered tensile and compressive stress grown on SrTiO₃ and LaAlO₃ substrates. The hysteresis loops at different temperatures show that the coercivity field with tensile stress is larger and the pinning potential of ferromagnetism motion is much stronger. The temperature dependence of the ZFC and FC magnetizations indicates that the stress significantly affects the ferromagnetic (FM) and antiferromagnetic transition temperature of PCMO, and the Curie temperature (T_C) decreases with tensile stress. The films show strong anisotropy properties that the magnetization increases much faster with the magnetic field when H⊥c, but the coercive field and saturation magnetization do not change significantly. In addition, the persistent photoinduced magnetization is investigated, and significant improvement of the FM ordering was observed in low temperature. And the saturation magnetization of each Mn ion is significantly affected by orientation and illumination.

     

Magnetism of Nano-Graphene with Defects: A Monte Carlo Study

The effect of the defects on magnetic properties of a bilayer Ising ferromagnetic antiferromagnetic model is studied by Monte Carlo simulations, for a nano-graphene lattice with spins that can take the values σ=3/2 and S=5/2. We consider two ferromagnetic and antiferromagnetic bilayers with N=42 spins, with a random number of defects. We only consider the nearest-neighbor interactions between the site i and j on each layer. The effects of the defects on magnetization are investigated for fixed temperature, crystal field, and magnetic field values. The thermal dependency of each layer magnetization is calculated for fixed defect rate values K ₃ and K ₅, the crystal field, and external magnetic field. The magnetization hysteresis loops for several rate defects are also investigated as a function of the external magnetic field.