Electrical and Pyroelectric Properties of Highly (001)-Oriented (Pb0.76Ca0.24)TiO3 Thin Films Grown by a Sol–Gel Process

Highly (001)-oriented (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films were grown on Pt/Ti/SiO₂/Si substrates using a sol–gel process. The PCT film with a highly (001) orientation showed well-saturated hysteresis loops at an applied field of 800 kV/cm, with remanent polarization ( P _r) and coercive electric field ( E _c) values of 23.6 μC/cm² and 225 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss values of these films were 117 and 0.010, respectively. The leakage-current density of the PCT film was 6.15 × 10⁻⁸A/cm² at 5 V. The pyroelectric coefficient ( p ) of the PCT film was measured using a dynamic technique. At room temperature, the p values and figures-of-merit ( F _D) of the PCT film were 185 μC/m²K and 1.79 × 10⁻⁵ Pa^−0.5, respectively.     

Formation of ZnAl2O4 in the Presence of Cl2

The formation of ZnAl₂O₄ spinel in diffusion couples of Al₂O₃ and ZnO was investigated between 1000° and 1390°C in air and in air containing 4.8 vol% Cl₂ by X-ray diffraction, electron probe microanalysis, and scanning electron microscopy. The rate of formation of a spinel layer obeyed a parabolic rate law and was accelerated remarkably by the presence of Cl₂. The interdiffusion coefficient, , and the activation energy, E, were calculated to be 10⁻⁸ to 10⁻⁹ cm²/s and 123 kcal/mol (514 kJ/mol) in air and 10⁻⁷ cm²/s and 31 kcal/mol (130 kJ/mol) in air containing 4.8 vol% Cl₂, respectively.     

Multiferroic BiFeO3 Thin Films Buffered by a SrRuO3 Layer

Multiferroic BiFeO₃ thin films of huge polarization have been successfully realized by using SrRuO₃ as a buffer layer on a Pt/TiO₂/SiO₂/Si substrate. They consist of a single perovskite phase and are nearly randomly orientated, where the SrRuO₃ buffer layer lowers the crystallization temperature and improves the crystallinity of BiFeO₃. With increasing deposition temperature during magnetron sputtering, they undergo an apparent grain growth and reduction in surface roughness. The multiferroic thin films deposited on the SrRuO₃-buffered Pt/TiO₂/SiO₂/Si substrate at higher temperatures show much improved polarization and reduced coercive field, together with a lowered leakage current. A huge remnant polarization (2 P _r) of 150 μC/cm² and a coercive field (2 E _c) of 780 kV/cm were measured for the BiFeO₃ film deposited at 650°C.     

In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm²) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

(Bi1/2Na1/2)TiO3–Ba(Cu1/2W1/2)O3 Lead-Free Piezoelectric Ceramics

(Bi_1/2Na_1/2)TiO₃ with 0–6 mol% Ba(Cu_1/2W_1/2)O₃ (BNT-BCW), a new member of the BNT-based group, has been prepared following the conventional mixed oxide route. The compacted bodies were sintered at 1130°C for 2 h to get dense ceramics. The addition of BCW into BNT ceramics facilitated the poling process because of a reduction in leakage current. 0.995BNT·0.005BCW ceramics exhibit a relatively high piezoelectric constant ( d ₃₃= 80 × 10⁻¹² C/N) and a relatively low dielectric loss (tan δ= 1.5%). Increased amount of BCW was found to increase the dielectric constant and loss of BNT-BCW ceramics and to suppress the grain growth. During sintering, some BCW diffuses into the lattice of BNT to form a solid solution and some remains on the grain boundaries.     

Preparation of Sputtered (Bax,Sr1−x)TiO3 Thin Films Directly on Copper

(Ba_0.6,Sr_0.4)TiO₃ (BST) films were deposited on copper foils by radio frequency magnetron sputtering. By the use of controlled p O₂ high-temperature anneals, the films were completely crystallized in the absence of substrate oxidation. X-ray diffraction and transmission electron microscopy (TEM) revealed an abrupt Cu/BST interface. The deposited BST films exhibit a zero bias permittivity and loss tangent values of 600 and 0.018, respectively. An electrical tunability ratio of 3.5:1 is observed on these metal–insulator–metal devices. Devices show leakage currents of 10⁻⁸ A/cm² at ±10 V/μm, and loss tangents as low as 0.003 in fields approaching 40 V/μm.     

Co-Additions of TiO2 and SiO2 Crystalline Fillers to Tailor the Properties of BaO–ZnO–B2O3–SiO2 Glass for Application to Barrier Ribs of Plasma Display Panels

The influence of co-additions of crystalline TiO₂ and SiO₂ fillers (10 wt% addition in total) to BaO–ZnO–B₂O₃–SiO₂ glass on resultant properties was investigated from the viewpoint of applying the material to the barrier ribs of plasma display panels. The substitution of SiO₂ for TiO₂ reduced the dielectric constant significantly, while it maintained high optical reflectance and appropriate coefficient of thermal expansion (CTE) in the case when TiO₂ alone was used. A 5–7.5 wt% SiO₂ addition with 2.5–5 wt% TiO₂ under the constraint of 10 wt% total fillers demonstrated an optical reflectance of about 55%, a CTE of about 8.3 × 10⁻⁶ K⁻¹ (compatible with glass panels), and a dielectric constant of about 7.5, which are promising properties for the barrier rib application.     

Flexible Dielectric Bi1.5Zn1.0Nb1.5O7 Thin Films on a Cu-Polyimide Foil

Flexible thin films of Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) were deposited on a Cu/polyimide (PI) foil by aerosol deposition at room temperature. The BZN film thickness was in the range of 1.2–17.9 μm. Highly dense and nanocrystalline films were obtained without any heat treatment. The dielectric constant and loss of the film at 100 kHz were over 150 and 0.04, respectively. Furthermore, the as-deposited film showed markedly low leakage current densities of <10⁻⁹ A/cm² at 3.0 V. These reasonably high dielectric properties were due to the nanocrystallinity of the films. The results confirm the significant potential of the BZN films as passive components in flexible printed circuit board applications.     

Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition

0.5Pb(Mg_1/3Nb_2/3)O₃-0.5PbTiO₃ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)-preferred orientation and large grain-size distribution when they were directly heat-treated after deposition of amorphous layers. The films showed a (111)-preferred orientation and small grain-size distribution when formed layer-by-layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)-preferred films was ∼35 µC/cm², which was somewhat higher than that of the (100)-preferred film. In contrast, the dielectric constant of the (100)-preferred film was ∼1600, which was larger than that of the (111)-preferred film.     

Interdiffusion in the System MgO-MgAl2O4

Interdiffusion coefficients in single-crystal MgO were determined using an MgO-MgAl₂O₄ diffusion couple. For a concentration of 1 mol% Al₂O₃ in MgO, the interdiffusion coefficient can be expressed as D =2.0±0.2 exp (−76,000±3,000/ RT ) for the MgO-MgAl₂O₄ couple. This relation compares well with previous measurements in the MgO-Al₂O₃ system. The interdiffusion coefficients, which increased with the mol fraction of cation vacancies, were in the range of 10⁻⁸ to 10⁻¹⁰ cm²s⁻¹ for the concentrations and temperatures studied. Diffusion was enhanced below 1640°C if powdered MgAl₂O₄ was used. Self-diffusion coefficients for Al³⁺ ions in MgO were calculated; Al³⁺ diffuses faster than Cr³⁺ in MgO.     

Novel Mg2Zr5O12/Mg2Zr5O12–ZrO2–MgF2 Gradient Layer Coating on Magnesium Formed by Microarc Oxidation

A novel Mg₂Zr₅O₁₂-based coating on magnesium was formed by microarc oxidation (MAO) in a K₂ZrF₆-containing electrolyte. The structure of the coating was examined by X-ray diffraction using the grazing angle method, scanning electron microscopy, and transmission electron microscopy. The friction and wear properties of the MAO-coated and -uncoated Mg samples were evaluated in a ball-on-disk testing system. The corrosion resistance of the coating in a 3.5% NaCl solution was investigated by the potentiodynamic polarization test. The coating is relatively dense and composed of a Mg₂Zr₅O₁₂–ZrO₂–MgF₂ inner layer and a nanocrystalline Mg₂Zr₅O₁₂ outer layer with a maximum hardness of 1240 Hv. The friction coefficient of the coating against Si₃N₄ is 0.35 under a dry-sliding condition. The corrosion resistance of the magnesium substrate is improved considerably by MAO treatment. The corrosion potential of the Mg₂Zr₅O₁₂-coated sample is −1.43 V with a current density as low as 7.06 × 10⁻⁸ A/cm². It is expected that the coating can considerably protect magnesium from wear and corrosion.     

Tribological Properties of Ti3SiC2

The present contribution reports the unlubricated friction and wear properties of Ti₃SiC₂ against steel. The fretting experiments were performed under varying load (1–10 N) and the detailed wear mechanism is studied using SEM-EDS, Raman spectroscopy, and atomic force microscopy. Under the selected fretting conditions, Ti₃SiC₂/steel tribocouple exhibits a transition in friction as well as wear behavior with coefficient of friction varying between 0.5 and 0.6 and wear rate in the order of 10⁻⁵ mm³·(N·m)⁻¹. Raman analysis reveals that the fretting wear is accompanied by the triboxidation with the formation of TiO₂, SiO₂, and Fe₂O₃. A plausible explanation for the transition in friction and wear with load is proposed.     

Preliminary Observations on Phase Relations in the "V2O3–FeO" and V2O3–TiO2 Systems from 1400°C to 1600°C in Reducing Atmospheres

Phase relations within the "V₂O₃–FeO" and V₂O₃–TiO₂ oxide systems were determined using the quench technique. Experimental conditions were as follows: partial oxygen pressures of 3.02 × 10⁻¹⁰, 2.99 × 10⁻⁹, and 2.31 × 10⁻⁸ atm at 1400°, 1500°, and 1600°C, respectively. Analysis techniques that were used to determine the phase relations within the reacted samples included X-ray diffractometry, electron probe microanalysis (energy-dispersive spectroscopy and wavelength-dispersive spectroscopy), and optical microscopy. The solid-solution phases M₂O₃, M₃O₅, and higher Magneli phases (M _n O_{2 n −1}, where M = V, Ti) were identified in the V₂O₃–TiO₂ system. In the "V₂O₃–FeO" system, the solid-solution phases M₂O₃ and M₃O₄ (where M = V, Ti), as well as liquid, were identified.     

Strength of Hot Isostatically Pressed Si3N4 After Heat Treatment in Ar-O2 and H2-H2O

The effects of heat treatment in Ar-O₂ and H₂-H₂O atmospheres on the flexural strength of hot isostatically pressed Si₃N₄ were investigated. Increases in room-temperature strength, to values significantly above that of the aspolished material, were observed when the Si₃N₄ was exposed at 1400°C to (1) H₂ with water vapor pressure ( P _H2O) greater than 1 × 10⁻⁴ MPa or (2) Ar with oxygen partial pressure ( P _O2) of between 7 × 10⁻⁶ and 1.5 × 10⁻⁵ MPa. However, the strength of the material was degraded when the P _H2O in H₂ was lower than 1 × 10⁻⁴ MPa, and essentially unaffected when the P _O2 in Ar was higher than 1.5 × 10⁻⁵ MPa. We suggest that the observed strength increases are the result of strength-limiting surface flaws being healed by a Y₂Si₂O₇ layer formed during exposure.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

Deviation from Stoichiometry in Cr2O3 at High Oxygen Partial Pressures

The deviation from stoichiometry, δ, in Cr₂−δO₃ was measured by a tensivolumetric method in the high pO₂ range of ≊10⁴ to 10⁴ Pa at 1100°C. The value of δ, or chromium vacancy concentration, was≊9×10⁻⁵ mol/mol Cr₂O₃ in air for Cr₂O₃ with 99.999% purity. The chemical diffusion coefficient, DT, determined from equilibration data was ≊4.6× cm²·s⁻¹ at 1100°C for pO₂= 2.2 ×10¹ Pa. The self-diffusion coefficient of Cr ions was calculated from and δ and found to be≊1.6×10-17 cm²-s⁻¹, in good agreement with recently measured values.     

Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO2 Buffer Layer on an Electroless Ni-Coated Cu Foil

The effect of zirconia (ZrO₂) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO₂ buffer layers retained acceptable capacitance densities (>350 nF/cm² for 50 nm thick ZrO₂), while significantly reducing leakage currents and improving reliability (<10⁻⁷ A/cm² after 1 h at 25 VDC for 100 nm thick ZrO₂), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.     

Fabrication and Electrical Properties of Textured Sr0.53Ba0.47Nb2O6 Ceramics by Templated Grain Growth

Textured Sr_0.53Ba_0.47Nb₂O₆ ceramics with a relative density of >95% were fabricated using templated grain growth (TGG). Acicular KSr₂Nb₅O₁₅ template particles synthesized via a molten salt process were aligned by tape casting in a mixture of solid-state-synthesized SrNb₂O₆ and BaNb₂O₆ powders. The resulting ceramics possessed strong fiber texture along the polar axis ([001]) of the strontium barium niobate. Samples with 15.4 wt% templates attained a textured fraction of 0.82 after sintering at a temperature of 1450°C for 4 h. These materials showed peak dielectric constants of 7550 at 1 kHz, remanent polarizations of 13.2 μC/cm², saturation polarizations of 21 μC/cm² (60%–85% of the single-crystal value), piezoelectric strain coefficients of 78 pC/N (70%–85% of the single-crystal value), and room-temperature pyroelectric coefficients of 2.9 × 10⁻²μC·(cm²·°C)⁻¹ (52% of the single-crystal value). These results show that TGG is a viable option for accessing single-crystal properties in polycrystalline ceramics.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.