基于新型宽带半模SIW巴伦的双平衡混频器

利用新型宽带半模基片集成波导(SIW)巴伦,设计制作了一个X波段双平衡混频器.利用SIW上下导带电流相位相差180°的原理,经优化设计使该巴伦具有体积小、带宽大、平衡性好等特点.测试结果表明,该双平衡混频器在8.7～9.7GHz的频率范围内变频损耗小于9dB,最小可达7.3dB;噪声系数小于10dB,实物面积为60mm×68mm.     

半模基片集成波导馈电的对数周期偶极子天线

设计并研制了一种基于半模基片集成波导(Half-mode Substrate Integrated Waveguide:HMSIW)馈电的单层宽带印刷对数周期偶极子阵列(Printed Log-Periodic Dipole Array:PLPDA)天线.对数周期偶极子阵列(PLPDA)天线具有频带宽、剖面低、重量轻等优点,但是其馈电需要平衡线结构.半模基片集成波导具有平面集成、主模带宽宽、损耗低、尺寸小等优点,同时自身天然具有平衡结构.文中设计并制作了工作频率为15GHz～40GHz的HMSIWPLPDA天线,测试结果和仿真结果吻合.     

一种U 波段鳍线单平衡混频器的设计

本文介绍了一种U 波段鳍线单平衡混频器的设计过程并给出了测试结果。混频器使用M/A-COM 公司的肖特基势垒二极管MA4E2037,整个电路制作在一块厚度为0.127mm 的RT-Duroid 5880 软基片上。射频端口采用鳍线过渡,本振端口通过波导-微带探针过渡,中频通过SMA 接头输出。测试结果显示,鳍线悬置微带线结构的混频器在本振为42 GHz, 射频在40～60GHz 范围内变化时,其变频损耗小于8.71 dB,本振到射频的隔离度大于25dB。     

基于半模基片集成波导的双频段缝隙天线

基于半模基片集成波导技术,提出了一种适用于微波集成电路的双频段缝隙天线。该双频段天线由馈电微带线,一段半共面波导结构和具有辐射缝隙的半模基片集成波导谐振腔构成,利用半模基片集成波导谐振腔的多模式工作特性实现了天线多频段特性。仿真和测试结果表明,该天线能同时工作在C频段(谐振频率5.74 GHz,S11=-21.86 dB)和X频段(谐振频率11.33 GHz,S11=-25.09 dB),不需要同时采用两个天线,具有便于和平面电路集成、体积小、结构简单、成本低等优点。     

基片集成波导双频段可调滤波器设计

根据基片集成波导谐振腔微扰原理,设计了一种基片集成波导双频带可调滤波器。通过在基片集成波导谐振腔中插入不同数量的金属铜柱,对电场进行微扰,实现滤波器四个状态可调。滤波器的第一通带由TE101模谐振产生,第二通带由TE_(102)和TE_(201)模谐振产生。为了验证设计的有效性,对可调滤波器进行加工与测试,实测滤波器的中心频率可以在5.25/8.25 GHz、6.40/8.32 GHz、7.90/8.95 GHz、8.20/9.20 GHz变化,插入损耗为-2.1～-3.8 dB,回波损耗小于-10 dB,满足设计要求。该滤波器具有易调谐、与其他平面电路易集成等优势。     

新型半模基片集成波导镜像转接段的研究

本文提出了半模基片集成波导的镜像转接段设计,并对其功率分配方面的应用展开了研究.首先分析了半模基片集成波导应用于功分器设计的局限性,然后提出了通过镜像转接方式来实现具有双侧开口面的新型半模基片集成波导镜像转接段.通过仿真分析和实验测试验证了半模基片集成波导镜像转接段结构及其设计方法的可行性.最后设计了基于镜像转接段且具有对称结构的半模基片集成波导三路功分器.该功分器的仿真结果与实验数据表明,采用镜像连接段的半模基片集成波导器件具有良好的传输性能,有助于拓宽半模基片集成波导在功率分配网络设计方面的应用.     

半模基片集成波导带通滤波器的设计

给出了一种新型半模基片集成波导（HMSIW）带通滤波器的设计和实验方案。该设计利用了半模基片集成波导的高通性质与周期性缝隙的带阻性质来产生带通滤波器的效果。设计的滤波器的中心频率在8GHz,带宽在12．5％左右,通带内插入损耗在1dB以下,回波损耗在-15dB以下,同时具有一定的带外抑制和良好的通带和阻带特性。文章最后用Ansoft HFSS软件进行了仿真实验。     

一种新型的基于半模基片集成波导技术的Butler矩阵

提出并实现了一种新型的基于半模基片集成波导技术的Buffer矩阵,实际制作的样品工作在X波段(10GHz),实测插入损耗为2dB,样品尺寸为24cmx6.5cm.采用了标准的双面PCB工艺,该结构与传统的微带电路相比具有插入损耗低、功率容量大等特点,与基片集成波导相比具有面积小的优点,是一种适合于在微波毫米波频段多波束天线使用的波束形成网络.文中给出了具体设计过程和测试结果.     

一种新型的HMSIW宽带带通滤波器

提出一种基于半模基片集成波导和缺陷地结构的新型宽带带通滤波器,将半模基片集成波导的高通特性与改进的哑铃形缺陷地结构的低通特性结合,实现了一种宽带小型化的带通滤波器。仿真与测试结果表明,该滤波器中心频率为5.3 GHz,相对带宽为53%,通带范围内插入损耗小于1.6 dB。该滤波器具有宽带小型化,容易集成等优点。     

基于1/4模基片集成波导的单馈电小型圆极化天线

1/4模基片集成波导可等效为由两个磁壁和一个电壁组成的等腰直角三角形波导.采用基于等腰直角三角形波导的空腔模式法分析了1/4模基片集成波导,得到了横电波模和横磁波模的表达式.基于1/4模基片集成波导设计了一种单微带馈电的平面小型圆极化天线.仿真结果表明:该天线可以实现右旋圆极化,且具有6.18 dBic的高增益和3.44％的3 dB轴比带宽.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.     

一种新型半模基片集成波导三孔定向耦合器

半模基片集成波导(HMSIW)是近年来出现的一种高性能平面导波结构,具有传输损耗小、功率容量大、易于集成等优点,已开始广泛应用于微波无源器件的设计中。文章基于HMSIW技术与PCB工艺技术设计制作了一种新颖的三孔定向耦合器,通过在耦合孔上金属面蚀刻"工"字形槽增加孔的耦合量。设计的HMSIW三孔定向耦合器不仅保持了集成基片波导(SIW)定向耦合器的所有优点,而且在面积上减小了近50﹪,工作带宽拓展到1GHz。实测数据与仿真结果基本吻合,验证了设计方法的正确性与可行性。     

0.1 THz鳍线单平衡式基波混频电路研究

研究了一种基于石英基片的0.1 THz频段的鳍线单平衡混频电路,混频电路的射频和本振信号分别从WR10标准波导端口通过波导单面鳍线微带过渡和波导微带探针过渡输入,中频信号通过本振中频双工器输出。这是一种新型的混频电路形式,与传统的W波段混频器相比,混频电路可以省略一个复杂的W波段滤波器,具有电路设计简单、安装方便的特点。该电路使用两只肖特基二极管通过倒装焊工艺粘结在厚度为75 m的石英基片上,石英基片相对传统基板,可以极大提高电路加工精度。在固定50 MHz中频信号时,射频90~110 GHz范围内,0.1 THz混频器单边带变频损耗小于9 dB。     

Half Mode Substrate Integrated Waveguide (HMSIW) 3-dB Coupler

In the microwave band, substrate integrated waveguide (SIW) couplers take the advantages of low profile, low insertion loss, low interference etc., but suffer from the big size. In this letter, a novel half mode substrate integrated waveguide (HMSIW) 3-dB coupler is proposed, which keeps the good performance of the SIW coupler with nearly a half reduction in size. Simulated results are in agreement with the measured data     

A Millimeter Wave Six-Port Network Using Half-Mode Substrate Integrated Waveguide

A novel six-port network based on half-mode substrate integrated waveguide (HMSIW) is proposed. In this design, a HMSIW hybrid 3 dB coupler and a -90° phase shifter are designed as fundamental building block of six-port network. By combining four HMSIW couplers and one phase shifter, a HMSIW six-port network at 29–32 GHz is constructed. The six-port network is fabricated and measured. Measurement results agree well with simulation, and show good balance and phase relationship between ports.     

140 GHz基于CPWG单平衡基波混频GaAs集成电路

通过在300 μm厚度的GaAs衬底条件下,利用共面波导传输线实现了基波混频集成电路设计。利用半导体分析仪测试I-U和C-U曲线,并成功提取了相应的肖特基二极管模型。结合建立的肖特基二极管模型,代入Lange耦合器、中频结构和匹配网络等实现了140 GHz零中频基波混频片上电路,并加入了地-信号-地(GSG)测试封装。最终仿真结果表明：在固定中频1 GHz的条件下,变频损耗最优为-7 dB,3 dB带宽大于40 GHz。     

A Novel 94-GHz MHMET-Based Diode Mixer Using a 3–dB Tandem Coupler

We report a high-performance 94-GHz monolithic millimeter-wave integrated-circuit diode mixer using metamorphic high-electron mobility transistor (MHEMT) diodes and a coplanar waveguide tandem coupler. A novel single-balanced structure of diode mixer is proposed in this paper, where a 3-dB tandem coupler with two sections of parallel-coupled line and air-bridge crossover structures are used for wide frequency operation. The fabricated mixer exhibits excellent local oscillator–radio-frequency (LO–RF) isolation, greater than 30 dB, in the 5-GHz bandwidth of 91–96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO–RF isolation and conversion loss to those of the W-band mixers reported to date.      

High-performance quasi-optical GaAs monolithic mixer at 110 GHz

A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.     

Design of Millimeter-wave Rectangular Waveguide to HMSIW Transition Based on Trapezoidal-shaped Probe

In this letter, a compact rectangular waveguide-to-half mode substrate integrated waveguide (HMSIW) transition is presented. It uses a trapezoidal-shaped probe to couple the energy from rectangular waveguide to HMSIW. A back-to-back test module at Ka-band is fabricated and measured. It provides a return loss better than 15 dB and an insertion loss of 0.85 to 1.3 dB within a frequency range from 25 to 40 GHz. The circuit size of the proposed transition is reduced by approximately 81.8% as compared with the waveguide-to-HMSIW transition using antipodal fin-line. Additionally, no intermediate transition is needed for this transition, which simplify the design of transition circuit. The measurement results agree well with simulation results, which validate the feasibility of the transition. Also, a tolerance analysis is performed via the simulation to verify the reliability of this transition design.     

Characterization of the Propagation Properties of the Half-Mode Substrate Integrated Waveguide

The propagation properties of the half-mode substrate integrated waveguide (HMSIW) are studied theoretically and experimentally in this paper. Two equivalent models of the HMSIW are introduced. With the first model, equations are derived to approximate the field distribution inside and outside the HMSIW. Using the second model, an approximate closed-form expression is deduced for calculating the equivalent width of an HMSIW that takes into account the effect of the fringing fields. The obtained design formulas are validated by simulations and experiments. Furthermore, the attenuation characteristics of the HMSIW are studied using the multiline method in the frequency range of 20–60 GHz. A numerical investigation is carried out to distinguish between the contributions of the conductive, dielectric, and radiation losses. As a validation, the measured attenuation constant of a fabricated HMSIW prototype is presented and compared with that of a microstrip (MS) line and a substrate integrated waveguide (SIW). The SIW is designed with the same cutoff frequency and fabricated on the same substrate as the HMSIW. The experimental results show that the HMSIW can be less lossy than the MS line and the SIW at frequencies above 40 GHz.