ZnO-V_2O_5-MnO_2中压体系压敏电阻的微观组织和电学性能

研究了中压体系ZnO-V2O5-MnO2(ZVM)压敏电阻的微观组织和电学性能。结果表明,MnO2含量增加有利于细化ZVM陶瓷晶粒,改善电性能,提高压敏电压;提高烧结温度可以促进ZVM陶瓷晶体生长,改善致密度,降低压敏电压,提高非线性系数。中压体系ZVM陶瓷可以通过控制MnO2含量以及烧结温度获得。     

Sb掺杂对ZnO-V2O5多元系压敏电阻的影响

本文研究了V/Sb预合成粉、SbVO4和Sb2O3等三种不同形式的Sb掺杂对ZnO-V2O5基压敏陶瓷结构和性能的影响.化学计量比不变情况下,上述Sb掺杂方式的改变,使烧结过程中Sb3 离子在陶瓷样品中的浓度上升,促进Zn7Sb2O12型尖晶石相形成,材料晶粒随之细化.同时材料的压敏电压出现大幅上升,而非线性系数和漏电流密度受Sb掺杂形式的变化影响不大.Sb以V/Sb预合成粉进行掺杂可以获得较大尺寸的晶粒,有利于材料在低压方面的应用.     

Improvement of electrical properties of V2O5 modified ZnO ceramics by Mn-doping for varistor applications

The dependence of microstructure, electrical properties, dielectric characteristics, and stability of conduction characteristics in ternary ZnO–V₂O₅–Mn₃O₄ system on the amount of Mn₃O₄ present in them was investigated. For all compositions studied, the microstructure of the ternary ZnO–V₂O₅–Mn₃O₄ system consisted of mainly ZnO grains and Zn₃(VO₄)₂ as a secondary phase. The incorporation of Mn₃O₄ to the binary ZnO–V₂O₅ system was found to restrict abnormal grain growth of ZnO. The breakdown field in the electric field–current density characteristics increased from 175 to 4,635 V/cm with the increase of Mn₃O₄ amount. The ternary system doped with 0.5 mol% Mn₃O₄ exhibited the highest non-ohmic properties, in which the non-ohmic coefficient is 22.4 and the leakage current density is 0.22 mA/cm². Furthermore, the sample doped with 0.5 mol% Mn₃O₄ was found to possess 0.43 × 10¹⁸/cm³ in donor density and 2.66 eV in barrier height.     

Al2O3掺杂ZnO压敏陶瓷的晶粒生长研究

研究了Al2O3掺杂对ZnO压敏陶瓷晶粒生长规律的影响,应用晶粒生长动力学方程确定了晶粒生长的动力学指数和激活能.实验结果表明,对于Al2O3掺杂ZnO压敏陶瓷,其晶粒生长的动力学指数n等于4,激活能Q等于(400±26)kJ/mol.Al2O3掺杂ZnO压敏瓷的晶粒生长机理是ZnAl2O3尖晶石颗粒在ZnO压敏瓷晶粒边界钉扎过程中Al3+和O2-通过ZnAl2O4尖晶石的扩散.     

Grain orientation and electrical properties of Sr2Nb2O7 ceramics

Sr₂Nb₂O₇ ceramics sintered at 1753 K and the hot-pressed compacts annealed at 1073 K possess low density because of the formation of voids by large expansion. The expansion is attributed to cleavage and due to the preferential grain growth along the <010> direction. An increase in dielectric constant at temperatures over 973 K and a parabolic decrease of resistivity with increasing temperature are observed. The constant variation corresponds well to the decrease in thermal strain and the grain orientation factor along the <0K0> direction.     

Grain growth kinetics of textured-BaTiO3 ceramics

Textured BaTiO₃ (BT) ceramics were fabricated by templated grain growth method. Effects of sintering conditions on the grain growth process of textured-BT ceramics were investigated. Orientation degree increased initially and then decreased with increasing soaking time. The ceramics were composed of equiaxed matrix grains and brick-like template particles. The brick-like particles aligned parallel to the casting direction by observing from SEM images. A (h00)-preferred orientation was confirmed by SAED and XRD patterns. Mechanism of grain growth in textured-BT ceramics was studied. Both consumption of matrix by templates and grain growth of templates determined the orientation degree of ceramics. The kinetic mechanism for grain orientation was also discussed by the simplified phenomenological kinetic equation. The average activation energies were 364 kJ/mol for matrix grain and 918 kJ/mol for template particle, respectively. Finally, a dense ceramic with 85% grain orientation was obtained after sintering at 1400 °C for 2 h.     

New low loss microwave dielectric ceramics in the BaO-TiO2-Nb2O5Ta2O5 system

Microwave ceramic dielectric resonator materials in the BaO-TiO₂-Nb₂O₅Ta₂O₅ system such as BaTiNb₄O₁₃, BaTiTa₂Nb₂O₁₃, BaTiTa₄O₁₃, Ba₃Ti₄Nb₄O₂₁, Ba₃Ti₄Ta₄O₂₁, Ba₃Ti₅Nb₆O₂₈, Ba₃Ti₅Ta₆O₂₈ and Ba₃Ti₅Nb₃Ta₃O₂₈ have been prepared by the conventional solid state ceramic route. They have relatively high dielectric constant and high quality factor. The resonator materials are characterized by X-ray diffraction and scanning electron microscopy (SEM) methods. The BaTiNb₄O₁₃Ba₃Ti₅Nb₆O₂₈ and Ba₃Ti₅Nb₃Ta₃O₂₈ have small temperature variation of the resonant frequency and are possible microwave dielectric resonator materials for practical applications.     

纳米氧化锌半导体块材晶粒生长的研究

以平均粒径20nm的ZnO超微粉为原料,研究了纳米ZnO块材烧结过程中的晶粒生长行为,由实验结果得出在700～900℃温度范围内,纳米ZnO烧结的晶粒生长动力学指数n为6,晶粒生长的表观活化能Q为64kJ/mol,导出了纳米ZnO的晶粒生长动力学方程.与粗晶ZnO的晶粒生长进行了对比,初步分析了纳米ZnO的烧结机制.     

Properties of Mn-doped BaTi4O9-ZnO-Ta2O5 ceramics

In Part I, the reaction sequence, microstructural analysis and microwave dielectric properties of manganese-doped BaTi₄O₉ + ZnO + Ta₂O₅ ceramics are discussed. This composition undergoes complex intermediate reactions during calcination. However, the final crystal phases after the sintering process were identical regardless of calcination temperature. Meanwhile, different calcination temperatures affect the relative volume fractions of the BaZn₂Ti₄O₁₁ phase and result in variations in T _f values. To analyse the microstructure, SEM, TEM and EDS analysis were performed. Mn dopants greatly enhanced the Q factor, up to 11000 at 4.5 GHz, whereas undoped ceramics indicated a high loss, probably due to the formation of Ti³⁺ during sintering in air.     

La替代对Bi2O3-ZnO-Nb2O5陶瓷介电性能的影响

研究了A位La^3＋替代对Bi2O3-ZnO-Nb2O5（BZN）陶瓷结构和介电性能的影响。当La替代量X〈0．5时,陶瓷相结构为单一的立方焦绿石相。随着La替代量的增加,陶瓷样品的晶粒尺寸和密度逐渐减小。低温下的介电弛豫现象随着La替代量的增加也发生有规律的变化,介电常数逐渐减小,弛豫峰峰形逐渐宽化,峰值温度向低温方向移动。与La替代量为0．1、0．15、0．3和0．5相对应的弛豫峰的峰值温度分别为-95℃、-99℃、-109℃和-112℃。     

Preparation and characterization of binary V2O5-Bi2O3 glasses

Characterization of the binary V₂O₅-Bi₂O₃ glasses prepared by rapidly quenching the melt has been made from the studies of X-ray diffraction, scanning electron microscopy, infrared absorption, differential thermal analysis, electron paramagnetic resonance, chemical analysis, density and electrical properties. Stable glasses are obtained for 95 to 75 mol % V₂O₅ by quenching on a stainless steel substrate, while quenching on a copper substrate extends the glass formation range from 95 to 70 mol % V₂O₅. The V-O bond vibration in the glasses occurs at 1020 cm^–1 and the V^5% ion exists in six-fold coordination as in crystalline V₂O₅. All the glasses appear to be in single phase. The spin concentration in the glasses is found to be independent of temperature. A second heat-treatment at 255° C develops crystalline phase in the glasses. Unlike infrared absorption, electron paramagnetic resonance, density and chemical compositions, the electrical and thermal (DTA) properties are found to be slightly sensitive to the thermal history of preparation of the glasses. The high-temperature (300 to 500 K) conduction in the glasses seems to be due to adiabatic hopping of polarons. The thermopower is observed to be independent of temperature and provides evidence for small polaron formation in the glasses.     

掺钽对二氧化钛压敏电阻性能的影响

研究了钽对二氧化钛压敏电阻性能的影响。研究中发现掺入 0 .2 5mol %Ta2 O5的样品显示出最低的反转电压 (Eb= 6V/mm)、最高的非线性常数 (α =8.8)以及最高的相对介电常数 (εr=6 .2× 10 4 ) ,与样品电容和电阻的频谱特性相一致。样品的性能变化可用Ta5+ 对Ti4 + 的掺杂取代和该取代存在的饱和值来解释     

Non-ohmic behaviour of the binary ZnO-Nb2O5 system

Studies have been made of the non-ohmic behaviour of the system ZnO-Nb₂O₅, as a function of composition, in the range 0.1 to 0.5 wt % of Nb₂O₅ and sintering temperature varying from 900 to 1300° C. It is found that the non-linearity coefficient varies with composition and sintering temperature. The maximum value of ( 8) is achieved for the samples containing 0.2 wt% Nb₂O₅, sintered at 1100°C. These results are interpreted in terms of the variation of barrier height with composition.