PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

偏压对铀表面多弧离子镀Ti/TiN多层膜的结构及抗腐蚀性能影响研究

在不同偏压下,利用多弧离子镀技术在U和Si基体上制备了Ti/TiN多层薄膜。利用X射线衍射仪和扫描电镜对多层膜的组织结构和薄膜界面形貌进行了分析。研究表明：脉冲偏压不但影响多层膜物相各衍射峰的强度,还诱导新相Ti₂N的出现。制备的多层膜呈“犬牙”交错的层状、柱状结构生长。随脉冲偏压的增加,柱状晶结构细化,薄膜变得更加致密。通过50μg/gCl^－溶液腐蚀研究表明：Ti/TiN多层膜提高抗腐蚀性能源于层状失效,使得腐蚀介质到达基体更加困难,抗腐蚀性能优良。     

PⅢD技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积(PⅢ&D)技术在2Cr13钢表面制备了Ti/DLC纳米多层薄膜.分析了膜层的微观结构和机械特性.实验结果表明:纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高.硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看:纳米多层薄膜保持了类金刚石(DLC)薄膜低摩擦系数的特性,具有良好的承载能力以及膜一基结合特性.     

纳米晶钛薄膜的制备及结构分析

采用磁控溅射和离子镀膜工艺在Mo基片上制备了具有不同晶粒尺寸的纯Ti薄膜,并利用X光衍射(XRD)、透射电镜(TEM)和扫描电镜(SEM)分析和观察了两类Ti膜的结构和形貌.实验结果显示:与溅射镀膜相比,离子镀膜的晶粒择优取向程度略低,Ti膜与基片结合较好;较高的基片温度有利于提高膜的致密程度,并降低膜的晶粒择优取向程序.     

纳米晶钛薄膜的制备及结构分析

采用磁控溅射和离子镀膜工艺在Mo基片上制备了具有不同晶粒尺寸的纯Ti薄膜，并利用X光衍射（XRD）、透射电镜（TEM）和扫描电镜（SEM）分析和观察了两类Ti膜的结构和形貌。实验结果显示：与溅射镀膜相比，离子镀膜的晶粒择优取向程度略低，Ti膜与基片结合较好；较高的基片温度有利于提高膜的致密程度，并降低膜的晶粒择优取向程序。     

Ti/Mo膜的X射线光电子能谱分析

利用X射线光电子谱仪(XPS)分析和Ar 刻蚀相结合的方法,分析了Ti膜表面的化学元素及相应原子的电子结合能.分析结果表明:Ti膜及膜材料样品表面有大量的C、O元素;膜表面存在从衬底扩散至Ti膜的Mo元素.对样品刻蚀后Ti 2p的XPS谱进行拟合表明:Ti膜表面的Ti由TiO2(约100%)和单质Ti组成,随刻蚀时间的增加,部分TiO2还原至低价Ti;薄的薄膜表面中的Mo由单质Mo和MoO3组成,而厚的薄膜以单质Mo为主;表面C由石墨态和结合能为288.2～288.9 eV的碳化物组成.     

Ti/Mo膜的X射线光电子能谱分析

利用X射线光电子谱仪（XPS）分析和Ar^ 刻蚀相结合的方法，分析了Ti膜表面的化学元素及相应原子的电子结合能。分析结果表明：Ti膜及膜材料样品表面有大量的C、O元素；膜表面存在从衬底扩散至Ti膜的Mo元素。对样品刻蚀后Ti2p的XPS谱进行拟合表明：Ti膜表面的Ti由TiO2（约100％）和单质Ti组成，随刻蚀时间的增加，部分TiO2还原至低价Ti；薄的薄膜表面中的Mo由单质Mo和MoO3组成，而厚的薄膜以单质Mo为主；表面C由石墨态和结合能为288．2－288．9eV的碳化物组成。     

直流磁控溅射钛及钛合金薄膜的性能研究

用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。     

CN-8022型薄膜的制备

目前,我国用于α径迹找矿的固体径迹探测器材料是灵敏度较低的CA-7801。为了提高探测灵敏度和α径迹找矿效果,研制了较高灵敏度的CN-8022型薄膜。它特别适合于弱氡地区使用。 1.薄膜结构和材料选择 该薄膜采用多层复合膜结构。由表面向底层顺序为保护膜、灵敏层和片基。为使薄膜具有一定的强度,片基采用75℃时老化的涤纶片基,用粘合剂粘接灵     

多束动态混合注入技术制备TiN厚膜的工艺、结构及性能研究

在多束动态混合(MBMI)-注入系统上利用MBMI技术制备TiN膜,XRD分析表明,N入射角度α(o)、氮钛原子到达比RN/Ti、N2分压PN2对膜生长的择优取向及相结构有影响;性能研究结果表明,高的入射离子能量Ei、基体温度Ts以及合适的RN/Ti对TiN膜的显微硬度HK和膜 -基结合力都有正面影响。     

Ti及Ti合金中氦泡形貌的透射电镜研究

利用磁控溅射方法在Ti、TiZr和TiMo合金膜中引入氦并进行热处理后,用透射电镜观察膜材中的氦泡。所观察到的氦泡可为多面体形或球体形,或多数为球形化的多面体形。在800℃热处理后的Ti和TiZr合金中均观察到规则的六边形和八边形氦泡,对应基体材料单晶平衡外形多面体的投影。720℃热处理40min后,TiZr合金膜中的氦泡比同样温度热处理130min后的接近球形。在600~650℃热处理30~60min后,合金中的氦泡比纯Ti中的氦泡更接近球形,生长受到的阻碍更大。除热处理温度、时间和合金成分外,晶界和其他氦泡也会影响氦泡形貌。在三叉晶界处的氦泡比晶界处的氦泡圆滑。氦泡在与其他氦泡邻近的部分会变得圆滑,促使自身向对方运动,促进氦泡的合并、长大。     

强流脉冲离子束辐照对钛合金表面相结构的影响

利用X射线衍射(XRD)和能量色散的特征X射线谱(XEDS)扫描,对强脉冲离子束辐照钛合金的表面结构特征和成分分布进行了测试与分析。结果表明,试样钛合金为(α+β)型两相钛合金。当以低能流密度离子束辐照时,材料表面粗糙度的增加导致结构发生明显变化;随着离子束能流密度的增加,材料表面层出现微小非晶相;表面元素呈明显的层状均匀分布;多次脉冲离子束辐照下,表面形成Al2O3等氧化物,从而利于被辐照表面抗氧化性的提高。进一步提高离子束能流密度,多次脉冲辐照,材料表面形成了新相Al6MoTi和AlMoTi2。     

衬底温度对蒸汽辅助沉积法制备钙钛矿薄膜微观结构的影响

通过调控薄膜生长衬底温度,提出了一种改良的蒸汽辅助沉积法制备有机-无机混合钙钛矿薄膜,可以更为可控优化薄膜生长条件。用同步辐射掠入射X射线衍射(Grazing Incidence X-ray Diffraction,GIXRD)结合扫描电镜(Scanning Electron Microscope,SEM)、紫外可见吸收谱(UV-Visible Absorption Spectrum)等表征方法证明衬底温度对制备的钙钛矿薄膜质量具有重要的作用:较低的衬底温度(约70?C)有助于钙钛矿晶粒的形成,其结晶性、晶面择优生长取向均较好,同时具有较高的光吸收性能;当衬底温度升高时(100?C、125?C),所制备的钙钛矿薄膜结晶性变弱,晶体择优生长取向明显变差,光吸收性能随之下降。研究结果有助于进一步优化蒸汽辅助沉积法制备钙钛矿薄膜工艺。     

Effect of O<Subscript>2</Subscript>/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

Direct Current Cylindrical Magnetron Sputtering Setup was used to deposit ZnO thin films on BK7 substrates. The effects of changing O₂/Ar reactive gas mixtures on the structural and optical properties of films were studied. Crystallinity and structure of films were obtained by X-ray diffraction (XRD). Preferential crystalline growth orientation of ZnO films detected by XRD was always along the (002) orientation. The thickness of films was measured by surface profilometer which showed thickness increasing from 68.7 to 80.8 nm for 3–6% O₂ amount respectively. The morphology and roughness of the films were investigated by Atomic Force Microscopy (AFM). As oxygen gas amount was increased, the roughness and the grain size were decreased and the deposition rate was increased. The optical transmittance of ZnO films are obviously affected by the changing of O₂/Ar reactive gas mixtures. All films exhibit a transmittance higher than 70% in the visible region. The optical band gap of films was measured by Tauc’s method. The results show that by increasing the amount of O₂ in reactive gas mixture, the optical band gap of deposited films increases.     

Reactive DC Magnetron Sputter Deposited Titanium-Copper-Nitrogen Nano-Composite Thin Films with an Argon/Nitrogen Gas Mixture

A sintered Ti13Cu87 target was sputtered by reactive direct current (DC) magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-copper-nitrogen thin films were deposited on Si (111), glass slide and potassium bromide (KBr) substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction (XRD). The chemical bonding was characterized by Fourier transform infrared (FTIR) spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide (anti ReO3) structures of titanium doped Cu3N (Ti:Cu3N) and nano-crystallite face centered cubic (fcc) structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM/EDX) were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio ( 0.07) below that of the original target ( 0.15). The transmittance spectra of the composite films were measured in the range of 360 to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti:Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films’ resistivity upon sputtering power is shown.     

CrN活塞环涂层的工艺制备与摩擦学性能研究

论文采用多弧离子镀技术在活塞环表面制备了CrN涂层,系统地研究了不同N2含量对CrN涂层的相结构和纳米硬度的影响规律.并采用CETR微动摩擦磨损试验机比较研究了Cr电镀层与CrN涂层的高温微动摩擦磨损性能,研究结果表明:随着N2含量的增加,薄膜由Cr2N(211)相过渡到CrN(220)相;膜层的纳米硬度随N2含量的增加而增大,并出现两个峰值;与Cr电镀层相比,CrN涂层主要以磨粒磨损为主,犁沟较窄且平滑,抗高温粘着磨损性能明显增强,而且摩擦系数较小,具有较好的摩擦匹配性能,更适合用于活塞环服役的高温磨损环境.     

Ti离子注入SiO_2合成TiO_2纳米颗粒及其光学性质

将105 keV的Ti离子注入到SiO_2玻璃至1×10~(17)、2×10~(17) cm~(-2),并在氧气气氛下进行热处理,借助紫外可见分光光度计、掠入射X射线衍射光谱仪、透射电子显微镜、原子力显微镜等多种测试仪器,详细研究了Ti O2纳米颗粒的形成、结构、分布及其光吸收和催化性能。研究结果表明,高注量Ti离子注入结合氧气气氛热处理可以在SiO_2基底中形成TiO_2纳米颗粒,并以金红石相为主。合成的TiO_2纳米颗粒的形貌明显依赖于离子的注量,随离子注量增加,形状不规则且分散排列的TiO_2纳米颗粒会转变成尺寸较为均匀、分布致密的纳米颗粒,进而形成了TiO_2类颗粒膜结构。另外,光催化降解实验结果表明,合成的纳米颗粒对罗丹明B溶液具有一定的降解作用。     

The Effect of Substrate Temperature on the Structure and Morphology of Titanium Nitride Compounds Grown by DC Magnetron Sputtering

The TiN thin films were deposited on p-type silicon (100) substrates using reactive planar DC magnetron sputtering system. The target was 99.99% pure Ti. The reactive sputter gas was a mixture of Ar (99.999%) and N₂ (99.999%) with the ratio Ar (97%) and N₂ (3%) by volume. Structural characterization of the coating was done using X-ray diffraction (XRD). The surface roughness of the coating was determined using an Atomic Force Microscope (AFM). The reflectivity of thin films was investigated by a spectrophotometer system. The X-ray diffraction measurements showed that by increasing the substrate temperature during the growth, change in crystalline structure will occur. The crystallite size of the films determined by Scherrer’s equation, and the crystallite size measured by AFM also increased by increasing the substrate growth temperature. The surface reflectivity measurements indicate that by increasing the substrate growth temperature, the optical properties of the films changes. The change in optical properties and crystalline structure of the films indicate that substrate growth temperature plays an important role in structure and morphology of the grown layers.     

电子束加热与电阻加热蒸发锆膜的结构分析

采用XRD与SEM分析了在钼衬底上电子束加热蒸发与电阻加热蒸发制备的锆膜的结构。结果表明,电子束加热蒸发与电阻加热蒸发在钼衬底上制备的锆膜为hcp结构;电子束加热蒸发的锆膜以（002）晶面生长为主,而电阻加热蒸发的则以（101）与（002）晶面生长为主;电阻加热蒸发的锆膜晶粒呈不规则堆积,大部分尺寸约为1 μm,少部分约为500 nm;电子束加热蒸发的锆膜织构强烈,晶粒规则,呈六棱柱型,尺寸约为300 nm。     

Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation

Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) ferroelectric thin films were grown on Pt/Ti/SiO₂/Si substrates by a sol-gel method. The samples were exposed to different dosage of ionizing radiation. Distortions in the crystalline structure, changes in the surface roughness and decrease in the remnant polarization were observed after radiation. For films subjected to 100 Mrad radiation, decrease in the leakage current up to four orders of magnitude was also observed, which can be explained by the increased grain boundary barrier height. Our results suggest that ionizing radiation could be an effective tool in modifying the properties of ferroelectric thin film for use in non-volatile memory devices.