Plasma-induced quantum well intermixing for monolithic photonic integration

Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.     

Monolithic Wavelength Converters for High-Speed Packet-Switched Optical Networks

This paper describes the design and demonstration of advanced 40-Gb/s return-to-zero (RZ) tunable all-optical wavelength converter technologies for use in packet-switched optical networks. The device designs are based on monolithic integration of a delayed interference Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) wavelength converter with a sampled-grating distributed Bragg reflector tunable laser and an on-chip waveguide delay. Experimental results are presented demonstrating error-free wavelength conversion with 1-dB power penalty at 40-Gb/s data rates. By incorporating label modulation functionality on-chip along with a fast tunable 40-Gb/s wavelength converter, fully monolithic packet-forwarding chips are realized that are capable of simultaneous error-free wavelength conversion of 40-Gb/s payloads, remodulation of 10-Gb/s packet headers, and data routing through fast wavelength switching     

Photonic crystal-based optical interconnect

This article presents theoretical optical data pathway model. The goal is to evaluate the physics behind photonic crystal/photon relationships and to develop a theoretical model for photonic crystal implementation into very large scale integration (VLSI) system design. One of the most popular applications of photonic crystals is the possibility of creating a new type of optical waveguide that surpasses the capabilities of present day optical communication equipment, i.e., fiber optics. Thus, further research used to determine the bandwidth capabilities of the data highway and clock synchronization between the signal generator and the receiving IC chip and the experiments based on laser diode switching are practiced to increase the speed     

Large-scale photonic integrated circuits

100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The transmitter is realized through the integration of over 50 discrete functions onto a single monolithic InP chip. The resultant DWDM PICs are capable of simultaneously transmitting and receiving ten wavelengths at 10 Gb/s on a DWDM wavelength grid. Optical system performance results across a representative DWDM long-haul link are presented for a next-generation optical transport system using these large-scale PICs. The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption.     

Code design and performance analysis in TCCPM system based on super trellis

This paper describes a technique related to the design of a trellis encoder, combined with the continuous phase modulation (CPM). Based on the idea of decomposing CPM into continuous phase encoder (CPE) and memoryless modulator (MM), superior trellis encoders are designed following Ungerboeck's set partitioning rules. Combinations are optimized with the squared minimum Euclidean distance based on the super trellis structure constructed by the trellis structure of trellis coded modulation (TCM) and CPE. Simulation results show that this new coding scheme consistently obtains better performance than previous schemes. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Hybrid integration of smart pixels by using polyimide bonding:demonstration of a GaAs p-i-n photodiode/CMOS receiver

The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels, and 16×16 and 2×2 Banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated error free at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 Banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated     

Optical-mode transformer: a III-V circuit integration enabler

Further development in optical fiber communications at 1.3 and 1.5 μm not only requires the improvement of components, but also hinges on the capability to fabricate optoelectronic circuits on a mass scale. Hybrid and monolithic integration of these components are expected to yield the means to mass produce optoelectronic circuits with the required characteristics. Effort is currently deployed to find simplified ways to optically interconnect such diverse components as lasers, modulators, waveguides, switches, filters and detectors, either by fiber pigtailing, hybridization on a Si-motherboard; or by monolithic integration on a single chip of InP. In this paper, emphasis is placed on the efficiency of optical-mode transformer (OMT) as a versatile solution to overcome the main technological obstacles of optical interconnection between InP-based components. A few examples will highlight the enabling qualities for fiber pigtailing and photonic integration     

Progress in InGaAs-GaAs selective-area MOCVD toward photonicintegrated circuits

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BHs) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LEDs)     

一种新型的旋转变压器式轴角编码器

文中提出采用高速精简指令集单片机以及高集成的模/数转换芯片的基于旋转变压器式的轴角编码器设计方案,并详细介绍本设计方案的构成原理框图,以及软、硬件处理中应着重考虑的问题.该方案具有电路集成度高、处理速度快、成本低等一系列优点.     

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm² with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm^-1     

Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime

Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 $mu$m is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of the absorber bias voltage of 0 V down to −3 V. Optical output spectra are broad, with a bandwidth of 6–7 nm. However, power exchange between different spectral components of the laser output leads to a relatively large phase jitter, resulting in a total timing jitter of around 35 ps. In a 4-mm-long, 10.5-GHz laser, it is shown that the operating regime of stable mode-locking is limited by the appearance of quantum dot excited state lasing, since higher injection current densities are necessary for these shorter lasers. The output pulses are stretched in time and heavily up-chirped with a value of 16–20 ps/nm. This mode of operation can be compared to Fourier domain mode-locking. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes such lasers promising candidates for, e.g., a coherent multiwavelength source in a complex photonic chip.      

Optimized pulse source employing an externally injected gain-switched laser diode in conjunction with a nonlinearly chirped grating

In this paper, we demonstrate the generation of transform-limited short optical pulses, which display excellent spectral and temporal qualities by employing a novel technology, based on an externally injected gain-switched laser in conjunction with a nonlinearly chirped grating. Using this technique, 3.5-ps optical pulses exhibiting a time-bandwidth product (TBP) of 0.45 are generated, which are suitable for use in high-speed 80 Gb/s optical time-division multiplexing (OTDM) communications systems. The numerical integration of a set of rate equations using suitable parameters for the devices used in the experiments were carried out to further confirm the feasibility of the proposed method for developing an optimized pulse source for high-speed photonic systems.     

Intimate monolithic integration of chip-scale photonic circuits

In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 /spl times/300 /spl mu/m footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 /spl mu/m on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band.     

Two-dimensional photonic crystal semiconductor lasers: computational design, fabrication, and characterization

We have designed, fabricated, and tested two-dimensional (2-D) slab photonic crystal semiconductor lasers at communication wavelengths. Wavelength-size microresonators defined on the 2-D slab photonic crystal have been effective in photon confinement and functioned well as ultra-small lasers by optical pumping. The photonic crystal laser structures that we have tested have shown large quality factors and low thresholds.     

Gas Sensors Based on Piezoelectric Micro-Diaphragm Transducer

ABSTRACT

We have fabricated high sensitive gas sensor based on piezoelectrically driven micro-diaphragm transducers. The micro-diaphragm transducer was fabricated using micro-electro-mechanical-system (MEMS) technique. The diol based sol-gel derived Pb(Zr_0.52,Ti_0.48)O₃(PZT) film was used as a piezoelectric actuating layer. We have used the resonant frequency change of micro-diaphragm transducer upon mass increase as a sensing signal. The resonant frequency values were measured by analysis of electrical signals from the micro-diaphragm transducer. The fundamental resonant frequency of the micro-diaphragm was in the range of 250 to 360 kHz, depending on their physical boundary conditions. The mass sensitivity of bare micro-diaphragm transducer was 66.5 Hz/ng. Two polymer sensing layers such as the polymethylmethacrylate (PMMA) and polydimethylsiloxane (PDMS) films were used to estimate the gas sensing behavior of microtransducers for various vapors of organic compounds. PMMA was used to detect primary alcohols while PDMS was used for toluene and benzene. The resonant frequency of micro-diaphragm transducer was shifted toward lower frequency range as the vapor concentration increased. With PMMA gas sensing layer, the micro-diaphragm showed a gas sensitivity of 0.456 Hz/ppm for ethanol vapor. When the PDMS gas sensing layer was used, the micro-diaphragm showed a gas sensitivity of 0.143 Hz/ppm for toluene vapor. When the test vapors were removed from the reaction chamber, the resonant frequencies of micro-diaphragm sensors were completely recovered to their initial state.     

A Large-Area High-Reflectivity Broadband Monolithic Single-Crystal-Silicon Photonic Crystal Mirror MEMS Scanner With Low Dependence on Incident Angle and Polarization

In this paper, we introduce a single-axis resonant combdrive microelectromechanical systems (MEMS) scanner with a large-area highly reflective broadband monolithic single-crystal-silicon (SCS) photonic crystal (PC) mirror. PC mirrors can be made from a single monolithic piece of silicon through alternate steps of etching and oxidation. This process allows the fabrication of a stress-free PC reflector in SCS with better optical flatness than deposited films such as polysilicon slabs on low-index oxide. PC mirrors can be made in IR transparent dielectric material and can achieve high reflectivity over a broad wavelength range. PC reflectors have several advantages over other mirror technologies. They can tolerate much higher processing temperatures and higher incident optical powers as well as operate in more corrosive environments than metals. Compared to multilayer dielectric stacks, PC mirrors allow for simpler process integration, thus making them highly compatible with CMOS and MEMS processing. In this paper, we fabricate a PC mirror MEMS scanner in SCS without any deposited films. Our PC mirrors show broadband high reflectivity in the wavelength range from 1550 to 1600 nm, and very low angular and polarization dependence over this same range. The single-axis MEMS scanners are fabricated on silicon-on-insulator (SOI) wafers with the PC mirrors also fabricated in the SOI device layer. The scanners are actuated by electrostatic comb drives on resonance. Dynamic deflection measurements show that the scanners achieve 22deg total scan angle with an input square wave of 67 V and have a resonance frequency of 2.13 kHz.     

Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers andlaser arrays grown on nonplanar substrates

High performance buried heterostructure InGaAs-GaAs-AlGaAs quantum-well lasers and laser arrays with tight spatial confinement of the electrical current and the optical fields have been fabricated by metalorganic chemical vapor deposition. The lasers ace fabricated in a single growth step, using nonplanar substrates as a template for the active region definition. CW room temperature threshold currents, as low as 0.5 mA and 0.6 mA, are obtained for as-cleaved double and single quantum-well lasers, respectively. External quantum efficiencies exceeding 80% are obtained in the same devices. High-reflectivity facet-coated lasers have room temperature CW threshold currents as low as 0.145 mA with 10% external quantum efficiency. Lasers made by this technique have high yield and uniformity, and are suitable for low threshold array applications     

Monolithic 40-GHz Mode-Locked MQW DBR Lasers for High-Speed Optical Communication Systems

The state-of-the-art of the development and fabrication of advanced 1.55-mum/40-GHz pulse laser modules with a monolithic InP-based mode-locked distributed Bragg reflector (DBR) MQW laser chip inside is reported, with respect to the future applications in high-speed optical communications. We emphasize the latest improvements for hybrid mode-locked devices, which integrate a saturable absorber or an electroabsorption modulator. We further illustrate different technical approaches that enable meeting predetermined frequencies and wavelengths, and which are at the same time promising with respect to high fabrication yields     

High efficiency widely tunable SGDBR lasers for improved direct modulation performance

We report on two novel approaches to improve the differential quantum efficiency (DQE) of widely tunable 1.55-/spl mu/m lasers: the bipolar cascade sampled grating distributed Bragg reflector (BC-SGDBR) laser and the gain-levered SGDBR (GL-SGDBR) laser. Each is fabricated on a robust InGaAsP/InP photonic integrated circuit platform. The lasers demonstrate improved direct modulation performance over conventional SGDBR lasers. The BC-SGDBR laser was also monolithically integrated with a semiconductor optical amplifier and photodetector receiver in order to perform wavelength conversion. Error free wavelength conversion at 2.5 Gb/s and improvements in conversion efficiency are demonstrated.     

基于STM32的磁编码器的设计

选用巨磁阻传感器作为敏感元件,设计一款基于STM32微控制器的磁编码器。由正交放置在圆柱状磁体下方的4个巨磁阻传感器输出两路正交电压信号,该电压信号经过调理电路滤波、放大,采用STM32微处理器对放大后的两路电压信号进行模数转换,然后对转换后的数字量进行校正、辩向和查表等来完成信号处理,输出准确的旋转角度值,并根据需要灵活选择合适的编码器输出方式。试验结果表明,磁编码器具有较高的检测精度以及实时性。