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高质量的InAs/GaSbⅡ类超晶格(SLs)材料生长在晶格匹配的GaSb衬底上,由于GaSb衬底具有良好的导电性,传统的霍尔测量难以直接得到外延超晶格材料的载流子浓度等电学参数,所以,如何准确地获得InAs/GaSb超晶格外延材料中的载流子浓度成为了研究人员关注的焦点之一。主要介绍了InAs/GaSbⅡ类超晶格背景载流子浓度测量的四种典型的方法:低温霍尔技术;变磁场霍尔技术以及迁移率谱拟合;衬底去除技术;电容-电压技术。并给出了各种方法的基本原理,评价了每种方法的优缺点。 相似文献
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高质量的InAs/GaSbⅡ类超晶格(SLs)材料生长在晶格匹配的GaSb衬底上,由于GaSb衬底具有良好的导电性,传统的霍尔测量难以直接得到外延超晶格材料的载流子浓度等电学参数,所以,如何准确地获得InAs/GaSb超晶格外延材料中的载流子浓度成为了研究人员关注的焦点之一.主要介绍了InAs/GaSbⅡ类超晶格背景载流子浓度测量的四种典型的方法:低温霍尔技术;变磁场霍尔技术以及迁移率谱拟合;衬底去除技术;电容-电压技术.并给出了各种方法的基本原理,评价了每种方法的优缺点. 相似文献
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探索用Te,Sn双掺杂实现掺杂剂分布正负梯度互补改善杂质纵向分布均匀性的外延工艺,讨论了有关问题,报道了主要结果。 相似文献
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ITO薄膜载流子浓度的理论上限 总被引:17,自引:0,他引:17
以氧化铟锡膜为例,讨论氧化物导体透明导电薄膜载流子浓度的理论上限,建立模型并给出了理论公式,得出氧空位和掺杂的最佳含量值。该理论也适用于掺铝氧化锌薄膜. 相似文献
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GaSb材料特性、制备及应用 总被引:4,自引:0,他引:4
Ga Sb 材料在制作长波长光纤通信器件方面具有极大的潜力,因而引起人们广泛的重视。文章简要地概述了 Ga Sb 材料的物理和电学特性,较详细地介绍了 Ga Sb 单晶材料的制备技术和薄膜生长技术。并介绍了 Ga Sb 在光电器件制造方面的进展情况 相似文献
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给出了载流子迁移率的各种测量方法,渡越时间(TOP)法、霍尔效应法、电压衰减法、辐射诱发导电率(SIC)法、表面波传输法、外加电场极性反转法和电流-电压特性法,并给出了这些测量方法的使用范围。 相似文献
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M. C. Chen L. Colombo J. A. Dodge J. H. Tregilgas 《Journal of Electronic Materials》1995,24(5):539-544
This paper will describe: (1) the first comparative study of recombination mechanisms between doped and undoped p-type Hg1-xCdxTe liquid phase epitaxy films with an x value of about 0.22, and (2) the first determination of τA7
i/τA1
i ratio by lifetime’s dependence on both carrier concentration and temperature. The doped films were either copper- or gold-doped
with the carrier concentration ranging from 2 x 1015 to 1.5 x 1017 cm-3, and the lifetime varied from 2 μs to 8 ns. The undoped (Hg-vacancy) films had a carrier concentration range between 3 x
1015 and 8 x 1016 cm-3, and the lifetime changed from 150 to 3 ns. It was found that for the same carrier concentration, the doped films had lifetimes
several times longer than those of the undoped films, limited mostly by Auger 7 and radiative recombination processes. The
ineffectiveness of Shockley-Read-Hall (SRH) recombination process in the doped films was also demonstrated in lifetime vs
temperature curves. The important ratio of intrinsic Auger 7 lifetime to intrinsic Auger 1 lifetime, τA7
i/τA1
i, was determined to be about 20 from fitting both concentration and temperature curves. The reduction of minority carrier
lifetime in undoped films can be explained by an effective SRH recombination center associated with the Hg vacancy. Indeed,
a donor-like SRH recombination center located at midgap (Ev+60 meV) with a capture cross section for minority carriers much larger than that for majority carriers was deduced from fitting
lifetime vs temperature curves of undoped films. 相似文献
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采用GaSb体材料和InAs/GaSb超晶格分别作为短波与中波吸收材料,外延生长制备了NIPPIN型短中双色红外探测器。HRXRD及AFM测试表明,InAs/GaSb超晶格零级峰和GaSb峰半峰宽FWHM分别为17.57 arcsec和19.15 arcsec,10μm×10μm范围表面均方根粗糙度为1.82?。77 K下,SiO_2钝化器件最大阻抗与面积乘积值RA为5.58×10~5Ω?cm~2,暗电流密度为5.27×10~(-7)A?cm~(-2),侧壁电阻率为6.83×10~6Ω?cm。经阳极硫化后,器件最大RA值为1.86×10~6Ω?cm~2,暗电流密度为4.12×10~(-7)A?cm~(-2),侧壁电阻率为4.49×10~7Ω?cm。相同偏压下,硫化工艺使器件暗电流降低1-2个数量级,侧壁电阻率提高了1个数量级。对硫化器件进行了光谱响应测试,器件具有依赖偏压极性的低串扰双色探测性能,其短波通道与中波通道的50%截止波长分别为1.55μm和4.62μm,在1.44μm、2.7μm和4μm处,响应度分别为0.415 A/W、0.435 A/W和0.337 A/W。 相似文献
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掺铝二氧化锡气敏材料的制备与性能研究 总被引:1,自引:0,他引:1
用sol-gel法制备了8种掺铝SnO2气敏材料,并用XRD分析其结构和晶粒度,用自组装仪器测定其气敏性能。结果表明:铝的掺入未改变SnO2的四方晶系结构,样品晶粒度为31.46~50.89nm;烧结温度600℃、掺铝量为5%(摩尔分数)的样品对C4H10的灵敏度为22.7;烧结温度600℃、掺x(Al)为1%的样品对H2S比较敏感,灵敏度为87.5;烧结温度700℃、掺x(Al)为5%的样品对C4H10灵敏度为45.5,对H2S灵敏度为100。 相似文献
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用溶剂热法制备了直径在100nm以内的一维针状及厚20~30nm、长几微米的二维花朵状Bi2Te3热电材料,分析了不同形貌产物的生长机理,并对其热电性能进行了比较。结果表明,添加剂的分子结构对产物形貌起决定性作用。不同形貌产物的热电性能随温度变化的机制不同,一维纳米结构Bi2Te3产物的功率因子随温度升高而增加,最大值为143.1μΩ·m–1K–2。而二维纳米结构的Bi2Te3产物虽然在室温附近有较大的Seebeck系数,约100μV/K,但由于其电导率较低,功率因子在较宽的温度范围内保持在23μΩ·m–1K–2左右。 相似文献
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We have measured hot carrier relaxation and recombination of photoexcited carriers in GaSb using picosecond time-resolved photoluminescence. We find that these processes are greatly modified compared to other III–V materials by the conduction band structure which permits a large electron population at the L-minima. Rapid carrier cooling observed at early times is explained by efficient relaxation of electrons within the L-valleys. For carrier densities 1019cm−3 we find that the dominant recombination process at low temperatures (4K) is radiative, but at hihg temperatures Auger recombination becomes dominant. This is manifest in a dramatic reduction of luminescence intensity, faster recombination and very slow energy relaxation. 相似文献
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Y. Gu Igor L. Kuskovsky G. F. Neumark W. Lin S. P. Guo O. Maksimov M. C. Tamargo 《Journal of Electronic Materials》2002,31(7):799-801
We have studied photoluminescence (PL) of ZnSe samples codoped with Te and N in δ-layers. We have concluded that Te clusters
are involved in the PL. We also compared the PL data of samples with lower Te concentrations to those with higher Te concentrations;
the results corroborate the Te-cluster conclusion. 相似文献
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