放电激励XeF(B→X)准分子激光器的高效率运转

在一台X射线预电离的XeF(B→X)准分子激光器中,我们应用磁开关隔离的预脉冲-主脉冲放电激励电路和磁脉冲压缩技术,研究了激光输出能量和转换效率对气体组份、总气压、电路参数和延迟时间的依赖关系,激光性能获得较大改进。当放电体积为0.11L,气体混合物(NF_3/Xe/Ne)的总气压为2.5×10~5 Pa时,激光输出能量345 mJ,总效率达3％。     

用于白癜风治疗的308nm XeCl准分子激光系统

研制了一台用于白癜风治疗的308nm XeCl准分子激光系统。根据准分子激光器脉冲式放电的特点,设计了推挽式脉冲开关电源。实验研究了激光器脉冲重复频率、工作电压、气体寿命对激光输出能量的影响,并检测了激光输出脉冲能量的稳定性。通过自动反馈控制系统调整激光头放电工作电压实现输出激光能量的稳定。激光采用扩展型紫外液芯光纤传导,得到均匀性良好的治疗光斑,液芯光纤对308nm激光的传输效率约为70%。激光器脉冲重复频率1～200Hz,工作电压18～25kV,输出能量不稳定度小于4%。经光纤输出用于治疗的有效光斑直径22mm,脉冲能量密度2～3mJ/cm2。     

横向激励多功能气体激光器工作特性的研究

本文介绍了管长0.5米电晕预电离双放电横向激励激光器在N_2和CO_2不同工作气体下运转的输出特件,通过实验分析了触发电极对放电均匀性和输出的影响及工作气压、杂质气体对输出的影响。该器件做成圆筒形,装拆、维修方便,可分别获得脉冲能量5mJ371AN_2激光输出和400mJ10.6μmCO_2激光输出。并可运转于XeCl准分子获3080A脉冲激光输出。     

放电激励重复频率HF激光器稳定输出实验研究

在放电激励重复频率气体激光研究中,激光器重复频率运行能量稳定输出是提高其输出平均功率及其实用化的基础。利用实验室已建立的单脉冲输出能量焦耳级的放电激励重复频率脉冲HF激光装置,通过调节气体介质循环速率及优化实验条件,开展激光器重复频率运行稳定输出实验研究,获得激光器重复频率运行时能量稳定输出的最佳工作条件。研究结果表明,随着运行频率的上升,激光输出能量衰减较快;增大气体介质循环速率有利于改善放电稳定性,提高激光器重复频率运行时输出能量稳定性。当混合气体工作介质以3.5m/s的流速循环时,激光器可实现1～50Hz重复频率激光输出,在重复频率50Hz运行时稳定输出能量约130mJ,能量波动约5%。     

高气压横流准分子激光器的流场效应

本文采用平面剪切干涉仪测量了高气压横向流动准分子激光气体的流速。分析了放电能量使气体加热对激光输出的影响,均匀的横流技术使激光器在每秒16个脉冲频率下获得18W平均功率输出。     

气体组份和峰化电容对脉冲HF激光输出特性的影响

研究了气体组份和峰化电容对紫外光预电离脉冲HF激光器性能的影响。实验发现最佳气体混合比为SF6 C2 H6 =2 0∶1,峰化电容和主放电电容的最佳比为Cp Cs =0 3,在最佳气体混合比时 ,最大激光脉冲能量和对应的总气压随充电电压的提高而增大。另外 ,激光脉冲宽度随气压的升高而减小。得到了 4 0 0mJ的能量输出 ,脉冲峰值功率为 1 5MW ,激光能量比输出达 31 7J l·atm ,最大电光转换效率约为 2 2 %。     

高同步双束长脉冲XeCl准分子激光器

我们利用一台结构新颖的双通道准分子激光器,在两组主放电电容上分别连接两组LC脉冲形成线。用一个公共火花球隙控制对相应的通道放电,从而获得了脉冲宽度达60ns高同步(抖动时间≤±4ns)XeCl准分子激光输出。每束激光的能量达120mJ。 实验中,我们研究了激光器激励电路的变化对激光脉冲宽度的影响,还研究了不同的气体组分和混合气体气压对光脉冲宽度及输出能量的影响。同时探讨了双束长脉冲激光器的高同步性能。     

100kJ级多路强电脉冲发生装置的同步精度技术研究

本文介绍了＂多路强电（磁）脉冲发生装置＂同步精度研究采用的每路输出＂储能电容＋同轴脉冲大电流火花开关放电＂型高压脉冲形成电路。用同轴电缆作为传输线将工作部件连接起来,以脉冲气体激光器作为终端负载（或其他负载,如磁脉冲线圈、电水锤等）组成多路相互隔离的强电脉冲充放电路,设计采用＂多路高压纳秒脉冲发生器装置＂进行同步精度触发,使高功率气体激光器的放电系统同时获得多路同步输出的高强电脉冲能量进行激励放电。同步精度装置的实验研究结果表明,多路同步导通强电脉冲能量已超出100kJ级,多路触发脉冲同步精度〈10ns,可为脉冲气体激光器提供更加超强激励触发能量获得高功率激光。     

2kHz重复频率紧凑型TEA CO2激光器

报道了一种高脉冲重复频率,紧凑型横向激励大气压CO2激光器.激光器使用紫外电晕预电离方式,放电均匀、稳定.自由振荡情况下,激光脉冲输出能量达到15 mJ,输出脉冲宽度为60 ns.气体高速循环系统采用涡轮增压技术,最高循环风速可达100 m/s以上,激光脉冲重复频率为2 kHz.     

面阵滑闪火花预电离放电引发脉冲氧碘化学激光的实验研究

采用脉冲气体放电可以实现连续波氧碘化学激光器的脉冲化输出来获得高峰值功率。提出了面阵滑闪火花预电离电极结构并解决了大体积辉光放电问题。将这个电极结构应用到脉冲氧碘激光器中,获得了单脉冲能量为4.4 J,脉宽为58 s,峰值功率为75 kW的脉冲激光。脉冲峰值功率与连续波平均功率之比为63。研究了发生器的P和输出耦合镜透射率对激光特性的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.