硅单模脊形光波导的三维模拟及实测结果

对当前硅光集成技术的热点、制备大断面低传播损耗单模脊形光波导进行了三维理论模拟设计。脊的上覆盖层是空气（大折射率台阶，非对称情况）或纯硅层（对称情况），均能得到符合实际的模拟结果。改变脊形光波导的高宽几何尺寸或折射率分布值，模拟结果呈现单模、双模或更高阶模的电场分布及光强分布。用相应条件指导硅脊形光波导的实际制备，实测结果表明模拟结果是准确的。     

脊形单模硅光波导的设计

对脊形单模硅光波导的模式特性进行了理论设计。分析了λ＝１．３μｍ的脊形硅光波导的结构参数及工艺流程。这种光波导的数值孔径和单模光纤匹配，传播损耗低于平面条形硅光波导，文中并对传播损耗作了讨论。     

硅 SIMOX 单模脊形光波导研制

本文描述硅光波导技术的重大突破：（１）用ＳＩＭＯＸ技术代替传统的硅外延型光波导，解决了衬底吸收光波．从而显著改善了光波导的传播损耗．（２）在理论及实验上均已解决用调整脊形的高宽比（高宽均能达１０微米左右），制取单模脊形光波导．这种光波导的下覆盖层是ＳｉＯ２，传播损耗小；断面积大，和单模光纤耦合良好．满足了光集成技术中对光波导的几项重要要求．     

Ge_(0.05)Si_(0.95)/Si脊形光波导的光场分析及设计

利用有效折射率法分析了Ge0.05Si0.95／Si脊形光波导的光场分布，得到了这种光波导在传输单模时内脊高b、外脊高h和脊宽W的合理取值，还为其它光波导器件的设计奠定了基础。     

Ge0.05Si0.9／Si脊形光波导的光场分析及设计

利用有效折射率法分析了Ｇｅ０．０５Ｓｉ０．９５／Ｓｉ脊形光波导的光场分布，得到了这种光波导在传输单模时内脊高ｂ，外脊高ｈ和脊宽Ｗ的合理取值，还为其它光波导器件的设计奠定了基础。     

锗硅脊形光波导Y分支器的模拟及试制

继研制成功单模脊形锗硅合金光波导后，进一步用这种光波导试制Ｙ分支器．文中用束传播法ＢＰＭ首先从理论上分析了波长λ＝１．３μｍ的光波在分支器中的传播特性，模拟计算了模场的传播及损耗．其次叙述了实际锗硅Ｙ分支器的制造工艺及测量结果．结果表明，激光束耦合进锗硅分支器的输入端后，分支器的二路输出端成功输出均匀的单模光波．     

离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导

采用离散谱折射率法对深刻蚀GaAs/GaAlAs多层脊形光波导的特性作了详细的理论分析,并对所获得的较大截面、低损耗的单模脊形光波导的制作容差性作了进一步的分析．计算表明,用离散谱折射率法获得的单模脊形光波导具有较大的制作容差性．     

离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导

采用离散谱折射率法对深刻蚀 Ga As/ Ga Al As多层脊形光波导的特性作了详细的理论分析 ,并对所获得的较大截面、低损耗的单模脊形光波导的制作容差性作了进一步的分析 .计算表明 ,用离散谱折射率法获得的单模脊形光波导具有较大的制作容差性 .     

非理想截面脊形介质光波导导波模式的研究

提出了一种求解任意截面形状脊形光波导的方法，先利用有效折射率的概念解出某种截面形状脊形光波导的等效折射率，再利用转移矩阵的理论求解出波导的模式色散方程。     

Ge0.05Si0.95/Si脊形光波导的分析及设计

提出了Ｇｅ０ ．０５Ｓｉ０ ．９５／Ｓｉ 脊形光波导的等效模型,并在此模型的基础上利用有效折射率的数值解法计算出Ｇｅ０ ．０５Ｓｉ０ ．９５／Ｓｉ 脊形光波导的有效折射率,从而为脊形光波导的设计提供了重要依据     

Optical study of porous silicon buried waveguides fabricated from p-type silicon

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p⁺.     

硅基光波导结构与器件

简要评述包括低损耗的电光波导器件、红外波导探测器、二氧化硅光波回路等硅基光波导的结构、工艺及其器件。     

Analysis of reflection coefficient for coated optical waveguide devices

ＡｎａｌｙｓｉｓｏｆｒｅｆｌｅｃｔｉｏｎｃｏｅｆｆｉｃｉｅｎｔｆｏｒｃｏａｔｅｄｏｐｔｉｃａｌｗａｖｅｇｕｉｄｅｄｅｖｉｃｅｓＷＵＦｅｎｇ（ＣｈｏｎｇｑｉｎｇＯｐｔｏｅｌｅｃｔｒｏｎｉｃｓＲｅｓｅａｒｃｈＩｎｓｔｉｔｕｔｅ，Ｙｏｎｇｃｈｕａｎ６３２１...     

Analysis of reflection coefficient for coated optical waveguide devices

From an ordinary condition,using a full three-dimensional model theory and an infinite perturbation expansion method,an exact solution of the re-flection coefficient for the coated narrow stripe-geometry optical waveguide devices has been derived.All six components and the vector property of the electroma-gnetic field have been considered.The results are suitable for the symmetric and asymmetric waveguides.     

金属覆盖型光波导极化器的分析和设计

本文通过精确求解波导的本征方程，针对光波导极化器，分析了金属覆盖四层光波导中ＴＭ模随缓冲层参数变化的特性，指出了存在于其中的模式共振点，根据模式共振点的特点给出了金属覆盖型光波导化器的优化设计原则，最后讨论了使用ＣａＡｓ／ＧａＡｌＡｓ材料制作光波导极化器的意义。     

硅的电化学自致停腐蚀研究

本文对硅的电化学自致停腐蚀的原理作了简要分析，利用自制装置实现了硅电化学自致停腐蚀，成功制备出符合光波导要求的ＳＯＩ片。     

Proton exchange in Y-cut LiNbO3

In the present work, planar waveguides in Y-cut LiNbO₃ were obtained using modified proton exchange (PE) conditions of: PE and subsequent annealing (APE), PE in buffered melts (BMPE), APE followed by PE (APE+PE), and PE in vapours (VPE). Benzoic acid was used as the proton source in the PE, BMPE, and (APE+PE) experiments. Cinnamic acid was used for obtaining VPE-waveguides. The main aim was to prevent surface damage of Y-cut crystals due to the strains introduced by proton exchange. The investigations performed showed that the surface etching is probably due to lattice deformation anisotropy leading to higher strains in PE Y-cut samples. Most encouraging results were observed, when an optimized (APE+PE)-procedure was used for waveguide formation. This method is very attractive for the fast preparation of deep high-index and low-loss waveguides in Y-cut LiNbO₃. This procedure allows passive and active elements to be produced in one and the same Y-cut substrate of LiNbO₃. Similar preliminary results were obtained under VPE conditions.     

高温对Ge_xSi_(1-x)/Si光波导及材料的影响

用ＧｅｘＳｉ１－ｘ／Ｓｉ亚稳材料在高温下制作了光波导，它的传输损耗为０．８ｄＢ／ｃｍ，比低温工艺的０．５ｄＢ／ｃｍ稍大。并发现ＧｅｘＳｉ１－ｘ／Ｓｉ材料的大量失配位错和一些有趣的现象。     

β-SiC-on insulator waveguide structures for modulators and sensor systems

In this work waveguide structures using the cubic polytype of SiC are analyzed. The β-SiC-on-insulator wageguides were fabricated by two different methods. In the first case, a technological process similar to that used for SIMOX material was used, a buried SiO₂ layer being formed by high-energy (2 MeV) ion implantation of oxygen in SiC/Si wafers. For the second case, the heteroepitaxy of SiC on SOI (SIMOX) wafers was used. The losses of the waveguides have been measured at 0.633, 1.3 and 1.55 μm in both TE and TM polarization and a detailed analysis and interpretation of the different loss mechanisms is presented. Using these two types of waveguides we have designed waveguide modulators using the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure and the local modulation of the refractive index was used to determine the effective index modulation of the guided mode. Optical simulations were performed using the spectral index and the effective index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology.