Thermal conductivity of tellurium-enriched Pb1 − x Mn x Te single crystals

We have studied the effect of excess tellurium atoms (up to 0.5 at %) on the thermal conductivity of single-crystal Pb_{1 ? x} Mn _x Te (x = 0.04) samples annealed at 570K for 120 h. We have evaluated the lattice and electron thermal conductivities of the samples, their additional thermal resistance due to structural defects, and the coefficient in the expression for the effective phonon scattering cross section. We assume that some of the excess Te atoms fill lead vacancies, thereby reducing the effective phonon scattering cross section.     

Structural and optical properties of Cd x Zn(1 − x)Te thin films

Seven Cd _x Zn_{(1 ? x} Te solid solutions with x = 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0 were synthesized by fusing stoichiometric amounts of CdTe and ZnTe constituents in silica tubes. Each composition was used in the preparation of a group of thin films of different thicknesses. Structural investigation of the obtained films indicates they have a polycrystalline structure with predominant diffraction lines corresponding to (111) (220) and (311) reflecting planes, which can be attributed to the characteristics of growth with the (111) plane. The optical constants (the refractive index n, the absorption index k, and the absorption coefficient α) of Cd _x Zn_{(1 \s -x)} Te thin films were determined in the spectral range 500–2000 nm. At certain wavelengths it was found that the refractive index, n, increases with increasing molar fraction, x. It was also found that plots of α² (hv) and α^1/2 (hv) yield straight lines, corresponding to direct and indirect allowed transitions respectively obeying the following two equations: $$\begin{gathered} E_g^d = 1.583 + 0.277x + 0.197x^2 \hfill \\ E_g^{ind} = 1.281 + 0.111x + 0.302x^2 \hfill \\ \end{gathered}$$      

Composition and predominant electron scattering mechanisms in Hg1 − x − y Cd x Eu y Se crystals

The surface of Hg_{1 ? x ? y} Cd _x Eu _y Se crystals has been examined by electron microscopy using backscattered and secondary electron imaging, and the composition of the crystals has been determined. Using transport and optical measurements, we have identified the predominant electron scattering mechanisms in the Hg_{1 ? x ? y} Cd _x Eu _y Se crystals.     

Electronic and optical properties of (Al x Ga1−x )1−y Mn y As single crystal: a new candidate for integrated optical isolators and spintronics

We have explored the electronic and optical properties of cubic (Al _x Ga_1?x )_1?y Mn _y As system using the FP-LAPW method. The unit cell has 64 atoms, so that one manganese (Mn) atom is placed in the position of gallium site, which corresponds to 3.125 % doping concentration with x = 12.5 %. Our calculations, using local density approximation + U (Hubbard parameter) scheme, predict that the ferromagnetic state for AlGaMnAs, with a magnetic moment of about 4.014 μ_B per Mn dopant is more favorable. Despite its electronic properties being strongly affected by inducing small amounts of Mn substitutional atoms in the cationic sublattice of AlGaAs, (Al _x Ga_1?x )_1?y Mn _y As possesses optical properties strictly less than those of Al _x Ga_1?x As, especially its optical conductivity at the peak 1.256 eV. The results indicate that AlGaMnAs may be a good candidate for optoelectronics when exploited in optical fiber networks, and it can still be of great interest because of its promising potential when used for spintronics.     

Plastic behaviour of Cd x Hg1−x Te (0⩽ x⩽1) crystals

Cd _x Hg_1–x Te (0x1) single crystals were strained by microhardness and by constant strain rate uniaxial compression tests, in the temperature range 300 to 600 K. Hardness curves as function of temperature can be described by empirical relations. Stress-strain curves, relaxation tests and dislocation observations using transmission electron microscopy show that the deformation is controlled by a thermally activated Peierls mechanism. Moreover, dislocations are dissociated with a stacking fault energy which does not depend on thex composition.     

Structural and optical properties of Bi x Se1−x films

Bi _x Se_1–x thin films have been studied because of their structural and optical properties with a view to judging their suitability as the recording medium in phase-change type optical recording. Amorphous films deposited at room temperature were crystallized by thermal annealing. X-ray diffraction analysis and surface morphological studies are reported. A maximum reflectivity difference of 25% at =830 nm was obtained upon amorphous-to-crystalline transition. The optical constants calculated by the Newton-Raphson method using the experimental transmittance, reflectance and thickness data are reported.     

Composition range and physicochemical properties of La1 − x Ba x Mn1 − y Fe y O3 solid solutions

We have determined the extent of La_{1 ? x} Ba _x Mn_{1 ? y} Fe _y O₃ solid solutions with orthorhombically and rhombohedrally distorted perovskite structures. A partial phase diagram of the LaMnO_{3 + δ}-BaMnO₃-BaFeO_2.5-LaFeO₃ system in air at a temperature of 1373 K has been proposed for the first time. We have measured the relative length change of La_{1 ? x} Ba _x Mn_{1 ? y} Fe _y O₃ samples and calculated their thermal expansion coefficients.     

First-principles investigations of structural, elastic, electronic and magnetic properties of Ga1−x Mn x P and In1−x Mn x P

We employ the full-potential linearized augmented plane wave plus local orbital (FP L/APW + lo) method based on the density functional theory (DFT) in order to investigate the structural, elastic, electronic, and magnetic properties of ordered dilute ferromagnetic semiconductors Ga_1?x Mn _x P and In_1?x Mn _x P at (x = 0.25) in the zinc blende phase, using generalized gradient approximation, GGA (PBE). To our knowledge the elastic constants of these compounds have not yet been measured or calculated, hence our results serve as a first quantitative theoretical prediction for future study. Results of calculated electronic structures and magnetic properties reveal that both Ga_0.75Mn_0.25P and In_0.75Mn_0.25P have stable ferromagnetic ground state, and they are ideal half-metallic (HM) ferromagnetic at their equilibrium lattice constants. Also we show the nature of the bonding from the charge spin-densities calculations. The calculated total magnetic moments are 4.0 μ_B per unit cell for both Ga_0.75Mn_0.25P and In_0.75Mn_0.25P, which agree with the Slater–Pauling rule quite well, and we observe that p–d hybridization reduces the local magnetic moment of Mn from its free space charge value and produces smaller local magnetic moments on the nonmagnetic Ga, In and P sites. The values of N ₀α and N ₀β exchange constants confirm the magnetic nature of these compounds. From the robust half-metallicity of Ga_0.75Mn_0.25P and In_0.75Mn_0.25P as a function of lattice constant is also investigated.     

Preparation and properties of Mn1.1Sb1 − y Al y and Mn1.1Sb1 − y Si y solid solutions

We have prepared Mn_1.1Sb_{1 ? y} Al _y (0 < y ≤ 0.2) and Mn_1.1Sb_{1 ? y} Si _y (0 < y ≤ 0.1) solid solutions with the B8 structure, in which the aluminum and silicon atoms substitute for antimony in the anion sublattice of manganese antimonide. Magnetic measurements have shown that substitutions within the stability region of the B8 phase have little effect on the mass magnetization and Curie temperature of the material. Mössbauer spectroscopy results confirm the anion nature of the substitutions.     

The mechanisms of yield and plastic flow in HgTe and Cd x Hg1−x Te

Single crystals of HgTe and Cd _x Hg_1–x (0.18<x<0.30), oriented for single slip, have been deformed in four-point bending at strain rates 10^–4 sec^–1 and temperatures from –11 to +84° C for HgTe, and 20 to 195° C for Cd _x Hg_1–x Te. At the lowest temperatures, the stress-strain curve exhibits a sharp yield relaxation and subsequent zero work hardening regime, as commonly observed for other semiconductors. Experiments show that the yielding mechanism is that proposed by Johnston and Gilman for LiF. Possible explanations for the post-yield zero work hardening phenomenon are discussed. The influence of composition, temperature and strain rate on the stress-strain behaviour are reported. At 20° C, the upper and lower yield stresses ( _uy and _1y ) increase with increasingx in qualitative agreement with our earlier hardness results. For Cd_0.2Hg_0.8Te, _1y varies with temperature,T, at a strain rate of 10^–4 sec^–1, according to _1y exp (Q/kT) whereQ is 0.16 eV. For HgTe the comparable value is 0.11 eV. Atx=0.25 and constant temperature, _1y depends on strain rate as _1y ^1/n wheren is 4. The stress level for deformation of Cd_0.2Hg_0.8Te at 10^–4 sec^–1 and 20° C is 2–3 kg mm^–2, comparable with that for InSb at 300° C or Si at 1000° C. Strain rate cycling tests on Cd _x Hg_1–x Te give values of activation volumeV* around 10b³ at 20° C, independent of plastic strain (up to 2–3%), suggesting that deformation in these alloys is controlled by the Peierls mechanism, as observed in other II–VI compounds.     

Dielectric and optical properties of TlGa1 − x Er x S2 (x = 0, 0.001, 0.005, 0.01) single crystals

TlGa_{1 ? x} Er _x S₂ (x = 0, 0.001, 0.005, 0.01) solid solutions, based on the layered compound TlGaS₂, have been prepared by direct elemental synthesis. The effect of Er concentration on the dielectric and optical properties of the TlGa_{1 ? x} Er _x S₂ solid solutions has been studied. The results demonstrate that increasing the Er content of the TlGa_{1 ? x} Er _x S₂ solid solutions decreases the real part of their complex dielectric permittivity and increases their dielectric loss tangent. The conductivity (σ) of the TlGa_{1 ? x} Er _x S₂ solid solutions in the frequency range f = 1 to 35 MHz exhibits σ ～ f ^0.8 behavior, indicative of hopping charge transport through their band gap. We have evaluated the key parameters of this charge transport mechanism. We have studied temperature-dependent optical properties of the TlGa_{1 ? x} Er _x S₂ solid solutions. At temperatures in the range T = 77–200 K, the TlGa_0.999Er_0.001S₂ solid solution has an absorption band near its fundamental absorption edge, which is due to transitions to a direct exciton state.     

Structural and optical properties of novel optoelectronic Tl1−xIn1−xSixSe2 single crystals

Principal optical properties of Tl_1?xIn_1?xSi_xSe₂ solid state crystalline alloys were studied. The influence of the x on the principal optical and structural features was explored. Temperature features of the band energy gap are studied. The possible explanation of the observed behavior is given within a framework of the Urbach rule approach. The role of intrinsic defective sub-system and anharmonic electron–phonon interaction is discussed. A possible application of the titled materials for the infrared optoelectronic is discussed. The replacement of In atoms by Sn is evaluated. Additionally studies of influence of x on the optoelectronic features is done. The formation of the positive charged ions (donors) and negatively charged ions is explored within the introduced intrinsic defect models.     

Structural, optical, magnetic and electrical properties of Zn1−x Co x O thin films

Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measurements. In this paper, we investigate systematically the structural, optical, magnetic and electrical properties of Zn_1−x Co _x O:Al thin films prepared by sputtering with x ranging from 0 to 0.33. We show that correlated ferromagnetism is present only in samples with x > 0.25. In contrast, samples with x < 0.2 exhibit weak ferromagnetism only in magnetometry measurement which is absent in optical and electrical measurements. We demonstrate, by systematic electrical transport studies that carrier localization indeed occurs below 20–50 K for samples with x < 0.2; however, this does not lead to the formation of ferromagnetic phase in these samples with an electron concentration in the range of 6 × 10¹⁹ cm⁻³ ∼1 × 10²⁰ cm⁻³. Detailed structural and optical transmission spectroscopy analyses revealed that the anomalous Hall effect observed in samples with x > 0.25 is due to the formation of secondary phases and Co clusters.     

Magnetic properties of (Dy1−xGdx)3Ga5O12 garnet single crystals

Magnetic properties of Dy_1–x Gd _x )₃Ga₅O₁₂ (DGGG) garnet single crystals were calculated using the Weiss molecular field theory and also measured using the vibrating sample magnetometer in the temperature range 4.2–40 K in the effective magnetic field from 0–7 T. The magnetic properties of DGGG single crystals are distributed between those of Dy₃Ga₅O₁₂ (DGG) and Gd₃Ga₅O₁₂ (GGG) single crystals, but are considerably closer to those of DGG. Based on the magnetic properties, the magnetic entropy change, S_M, was evaluated in the temperature range below 15 K. DGGG single crystals are a prospective material for magnetic refrigeration below 15 K.     

Magnetic ordering in CeCu6−x Au x single crystals: Thermodynamic and transport properties

We report on measurements of the magnetizationM, specific heatC, resistivity , and magnetoresistivity of CeCu _6–x Au _x single crystals (x=0.3 and 0.5) grown by the Czochralski method. Antiferromagnetic ordering is observed inM andC for temperatures less thanT _N=0.48 K (x=0.3) and 0.95 K (x=0.5), similar to the ordering temperatures found previously for polycrystalline samples. As a function of magnetic fieldB, M(B) andC(T, B) are strongly anisotropic, with the easy axis along the crystallographicc direction (orthorhombic notation) as for pure CeCu ₆ . For large magnetic fields where the magnetic ordering is suppressed, the specific heat can be described by the resonance-level model suggestive of a single-ion Kondo effect, similar to CeCu ₆ where for largeB the short-range magnetic correlations are suppressed. The averaged Kondo temperature as determined from a number of properties decreases with increasingx, withT _K=4.0 K forx=0.3 and 3.0 K forx=0.5, compared to 5.8 K forx=0. The magnetoresistivity shows a negative contribution arising from incoherent Kondo scattering and a positive contribution associated with the magnetic order.     

Magnetic and structural properties of nanophase AgxFe1 − x solid solution particles

In this study, silver and iron elements are evaporated simultaneously to form nanocrystalline solid solution particles and then quench to liquid nitrogen temperature. The average composition of the nanocrystalline Ag-Fe system analyzed by scanning electron microscopy with energy-dispersive spectroscopy is close to the gross composition of the raw materials. X-ray diffraction patterns indicate only Ag peaks in those of the nanocrystalline Ag-Fe solid solutions. Transmission electron microscopy images of the Ag-Fe system indicates a mean particle of about 10 nm for these nanocrystalline solid solutions. The magnetic properties of Ag-Fe systems depend on the mean particle's sizes and the concentration of solid solutions. The temperature dependence of the magnetic properties is analyzed and related to the microstructural changes induced by the thermal treatments. Nanocrystalline Ag-Fe system with a Curie temperature of Fe occurs at about 580 °C. The magnetization and remanence of as prepared or after heat-treatment nanocrystalline Ag-Fe solid solutions increase with increasing atomic percentage of iron.     

Magnetic and Magnetocaloric Properties of Laves Phase Dy1−x Gd x (Co1−x Ni x )2 Solid Solutions

We report magnetic and magnetocaloric properties of the polycrystalline series of Dy_1?x Gd _x (Co_1?x Ni _x )₂ (x=0.1, 0.2, 0.3, 0.4 and 0.5) solid solutions. The samples were characterized by powder X-ray diffraction patterns taken at room temperature and revealed that all the Dy_1?x Gd _x (Co_1?x Ni _x )₂ solid solutions consist of the C15 cubic Laves phase MgCu₂ type structure and a small amount of DyCo₃ and Dy₂O₃ impurity phases. Magnetic measurements showed that the samples undergoes a second-order type phase transition at T _C<130 K, from paramagnetic to ferromagnetic state. Heat capacity measurements have been performed for all solid solutions and allowed us to determine the Debye temperature. The magnetocaloric effect has been studied by means of specific heat measurements in magnetic field 0.42, 1 and 2 T. The GdNi₂ substitution effect on magnetic and magnetocaloric properties will be discussed.     

Structural, transport, magnetic, and dielectric properties of La1−x Te x MnO3 (x = 0.10 and 0.15)

In this study, we have investigated the structure, temperature-dependent resistivity, magnetization, and dielectric properties of La_1?x Te _x MnO_3±δ (x = 0.10 and 0.15). X-ray diffraction analysis confirms the rhombohedral crystal symmetry with space group R $ \overline{3} $ c. For both the samples, the temperature dependence of magnetization plots show paramagnetic-to-ferromagnetic phase transition. The Curie temperature (T _c) and magnitude of magnetization increase with the Te concentration. Field-dependent magnetization produces the asymmetric hysteresis loop that has been attributed to the magneto crystalline anisotropy induced by lattice distortion and the rare earth spin coupling at room temperature. Temperature-dependent resistivity plots exhibit metal–insulator transition (MIT) and charge-ordering state. These plots have been fitted using variable range hopping model, and the density of states [N(E_F)] has been estimated. Magnetoresistance is measured as a function of temperature in the field of 1T, 5T, and 8T. The dielectric constant shows an anomaly near MIT. The dielectric constant exhibits a peaking behavior with the applied frequency and the temperature dependence of dielectric constant attains colossal values at high temperatures.     

Growth and properties of Ga y In1 − y P z As1 − x − z Bi x solid solutions on GaP substrates

Data are presented on temperature-gradient melt growth of GaInPAsBi solid solutions on GaP substrates. Heterophase equilibria in the Ga-In-P-As-Bi system are analyzed in terms of the regular solution model. The growth kinetics, composition, and structural perfection of GaInPAsBi/GaP heterostructures are investigated.