不同激光二极管能量触发下GaAs 光导开关研究

GaAs 光导开关在较高的场强下可工作于雪崩模式,为此设计了异面体结构的GaAs 光导开关以提高开关场强。 设计的开关芯片厚度为2mm,电极间隙为3mm,利用半导体激光二极管对开关进行了触发实验。当开关充电电压超过 8kV 后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始了雪崩工作模式,且随着开关电场不断增加, 开关输出电压幅值也线性增加。在不同触发能量下,开关输出电压幅值和波形基本没有改变,但在较高的触发能量和高 的偏置电场下,开关抖动较小,实验中开关获得的最小抖动约500ps。     

激光二极管抽运声光调Q高重复频率473nm激光器

实现了重复频率高达100kHz,紧凑的全固态激光二极管抽运的声光调Q473nm腔内倍频蓝光激光器。使用5mm长的Nd∶YAG作为激光介质,倍频采用了10mm长的I类非临界匹配LBO晶体,激光器外形尺寸为11cm×6cm×3cm。使用2W的激光二极管抽运,20kHz重复频率下,得到平均功率为64.8mW的473nm稳定输出,总光光转换效率为3.2%。在1kHz重复频率下,得到脉冲宽度为23ns,峰值功率接近700W,单脉冲能量达到16μJ的稳定的473nm激光脉冲。推导了准三能级系统的储能公式。此公式与以前的结果不同,认为有效储能时间不等于上能级寿命。通过实验结果的分析验证了这个结论。     

25-W CW high-brightness tapered semiconductor laser-array

High-power high-brightness laser diode arrays comprising 25 tapered laser oscillators have been fabricated. The devices, based on recently developed low-modal gain epitaxial layer-structures, deliver a maximum output power of more than 25-W continuous-wave. A high beam quality uniformity is achieved with an average beam quality factor of M ²=2.6 for each individual emitter. Compared to conventional broad-area laser diode arrays the brightness of each emitter is improved by more than an order of magnitude in the slow-axis direction. These arrays have the potential to produce optical power densities as high as 1 MW/cm²     

用1553nm激光脉冲触发GaAs光电导开关的研究

用1553nm飞秒光纤激光器触发半绝缘GaAs光电导开关的实验表明,当光电导开关处于3.33～10.3kV/cm的直流偏置电场并被脉冲宽度200fs且单脉冲能量0.2nJ的激光脉冲照射时,开关表现为线性工作模式,开关输出峰值电压为0.8mV.分析表明,开关对波长为1553nm触发激光脉冲表现出的弱光电导现象起因于半绝缘GaAs材料EL2深能级的作用.     

Design of high-peak current and narrow pulse driver of laser diode

This paper presents a laser diode (LD) pulse driving circuit that can generate current pulses of amplitudes range from 6 to 30A, with pulse widths varying from 5 to 100 ns and frequencies varying from 500 Hz to 50 kHz. It is with monostabillity trigger used as pulse shaping component, with power metal-oxide-semiconductor field effect transistors (MOSFETs) as fast switches and power inverter devices, with low voltage power supply that the circuit generates high-peak pulse current. As its structure is simple and easy to understoand and realize, the circuit is of great value to be used to drive pulsed semiconductor laser.     

Generation of picosecond blue light pulse by frequency doubling ofgain-switched GaAlAs laser diode having saturable absorber

Picosecond pulse generation of blue light by frequency doubling of a GaAlAs laser diode is reported. High power pulse generation is realized by incorporating gain switching of a laser diode with a saturable absorber and frequency doubling in a proton-exchanged MgO:LiNbO₃ waveguide. The laser diode with a longer saturable absorber can produce optical pulses with higher peak power and narrower pulse width. The spectral bandwidth of second-harmonic generation for the waveguide is evaluated at about 20 nm. This is wide enough to frequency-double all the multilongitudinal modes of the gain-switched laser diode. A blue light pulse of 7.88-mW maximum peak power and 28.7-ps pulsewidth is obtained for a 1.23-W peak pulse of the laser diode     

半导体激光二极管触发GaAs光导开关

半导体激光二极管触发下砷化镓（GaAs）光导开关工作于雪崩模式,为此设计了异面体结构的GaAs 光导开关以提高开关场强.设计的开关芯片厚度为2 mm,电极间隙为3 mm,利用半导体激光二极管对开关进行触发实验.当开关充电电压超过8 kV 后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始雪崩工作模式.随着开关电场不断增加,开关输出电压幅值也线性增加,但开关输出波形没有改变.对开关抖动进行测试,其测试结果显示开关偏压对抖动影响很大,随着开关偏压增加,开关抖动减小,当开关偏压升至15 kV 时,开关获得最小抖动约500 ps.     

高重频可调小型高功率半导体激光电源研究

为了获得高功率、高重频半导体激光脉冲,设计了一种体积小、重量轻、造价低的纳米级大功率半导体激光器驱动电源。采用改进的单稳态触发器产生窄脉冲,经放大后驱动快速开关MOSFET获得大电流窄脉冲;电源脉冲电流驱动能力0A～80A,脉冲上升时间2.8ns,下降时间3.8ns,脉冲宽度5ns～500ns范围内可调,最小5.2ns,重复频率可达200kHz。用该电源实验测试了激光波长为905nm的半导体激光器,在重复频率为10kHz时,激光脉冲峰值功率达到70W以上。结果表明,采用窄脉冲驱动MOSFET可以得到高重复频率10ns以内的大电流窄脉冲,可以驱动大功率半导体激光器,若驱动100A以上的激光器需进一步研究。     

Polycrystalline cubic silicon carbide photoconductive switch

The first cubic silicon carbide (3C-SiC) photoconductive switches were fabricated from polycrystalline 3C-SiC. The switches had a dark resistivity of 10⁶ Ω/cm. A breakdown field of 250 kV/cm and a peak photocurrent density of 10 kA/cm² through the switch were obtained. The ratio of off-resistance to on-resistance of the switch reached up to 10⁵. The photocurrent had a pulse width as narrow as 15 ns. The trigger gain of the switch was 4.7     

半绝缘GaAs光电导开关的延迟偶极畴工作模式

基于转移电子效应提出半绝缘光电导开关延迟偶极畴工作模式,理论分析了强场下开关的周期性减幅振荡.指出开关的周期性减幅振荡是由于外电路的自激振荡和开关的转移电子振荡共同作用引起的.开关的偏置电场在交流电场的调制下,当畴到达阳极时,开关电场下降到低于耿氏阈值电场ET而高于维持电场ES(维持畴生存所需的最小电场),开关将工作于延迟偶极畴模式.进而从理论和实验两方面指出半绝缘GaAs光电导开关是一种光注入畴器件,光生载流子的产生使得载流子浓度与器件长度乘积满足产生空间电荷畴所需的条件.     

半绝缘GaAs光电导开关的延迟偶极畴工作模式

基于转移电子效应提出半绝缘光电导开关延迟偶极畴工作模式,理论分析了强场下开关的周期性减幅振荡.指出开关的周期性减幅振荡是由于外电路的自激振荡和开关的转移电子振荡共同作用引起的.开关的偏置电场在交流电场的调制下,当畴到达阳极时,开关电场下降到低于耿氏阈值电场ET而高于维持电场ES(维持畴生存所需的最小电场),开关将工作于延迟偶极畴模式.进而从理论和实验两方面指出半绝缘GaAs光电导开关是一种光注入畴器件,光生载流子的产生使得载流子浓度与器件长度乘积满足产生空间电荷畴所需的条件.     

The lock-on effect in electron-beam-controlled gallium arsenideswitches

The authors analyze the lock-on effect, which is the inability of photoconductive or electron-beam-controlled semiconductor switches to recover to their initial hold-off voltages following the application of the laser or electron-beam pulse, if the applied voltage exceeds a certain value. For GaAs this threshold voltage corresponds to average electric fields in the range from 4 to 12 kV/cm. Experimental results on semi-insulating GaAs switches indicate that the corresponding lock-on current after e-beam irradiation is identical with the steady-state dark current. The highly resistive state of the switch before e-beam irradiation is shown to be a transient phase towards the much lower steady-state dark resistance, with a duration which depends on the impurity content of the switch material and the applied voltage. The irradiation of the GaAs samples with electrons or photons causes an acceleration of this temporal evolution; at sufficiently high laser or e-beam intensities, lock-on of the dark current after termination of the driving ionization source is observed. Based on the experimental results, a model is developed which describes the lock-on effect in terms of double injection and carrier trapping in deep intraband levels. The model explains the major characteristics of the lock-up effects and is supported by the qualitative agreement of the calculated current-voltage curves with the experimental data     

8～20GHz GaAs pin二极管单片单刀双掷开关

基于中国科学院微电子研究所的GaAs pin二极管工艺,设计、制作并测试了一种单片单刀双掷开关.在8～20GHz频段内,开关正向导通时的插人损耗最小值为1.5dB,输入和输出端的同波损耗大于10dB;开关关断状态的隔离度最大值为32dB.开关的支路采用串联-并联-并联的结构,其中的GaAs pin二极管基区厚为2.5μm.在1.3V的偏置电压下,正向导通的串联二极管工作电流为     

四路并联光电开关输出电脉冲性能研究

采用波长为1064 nm的ns脉冲激光器作为触发光源,利用光纤分束同时触发四路并联GaAs光电开关.得到能够得到稳定的电脉冲,任意两路电脉冲的同步精度为48ps,满足实际应用指标.     

用1064nm激光脉冲触发半绝缘GaAs光电导开关的奇特光电导现象

报道了用1064nm激光脉冲触发半绝缘GaAs光电导开关的一种奇特光电导现象.GaAs光电导开关的电极间隙为4mm,当偏置电场分别为2.0和6.0kV/cm时,用脉冲能量为0.8mJ,宽度为5ns的激光触发开关,观察到开关输出的线性和非线性工作模式.当偏置电场增至9.5kV/cm,触发光脉冲能量在0.5～1.0mJ范围时,观察到奇特的光电导现象,开关先输出一个线性电脉冲,经过大约20～250ns时间延迟后,触发光脉冲消失,开关又输出一个非线性电脉冲.这一奇特光电导现象的物理机制与半绝缘GaAs中的反位缺陷和吸收机制有关.分析计算了线性与非线性电脉冲之间的延迟时间,结果与实验观察基本吻合.     

用金属氧化物半导体场效应晶体管器件实现的高重复率电光调Q模块设计

随着激光器的发展,需要高重复率的电光调Q器件。提出了一种新型超快、高重复率的电光调Q技术,这种技术采用V型槽的金属氧化物半导体场效应晶体管(VMOSFET)器件作为调Q模块的主功率开关,运用宽范围可调的高压稳压电源和调Q触发信号整形电路,以及加压调Q和退压调Q的兼容电路。实验中得出:当调Q工作频率为10 kHz时,调Q电压幅度3~5 kV任意可调,电压脉冲宽度小于5 ns,触发抖动时间小于1μs,且可以长期稳定工作。该调Q模块已经用于激光二极管(LD)抽运的无水冷固体Nd∶YAG激光器和连续Nd∶YAG激光器中。     

ps级任意整形脉冲发生器

任意形状激光束需要有一个相应的形状任意可调的电脉冲.在各种任意脉冲产生技术中,FET行波结构可以达到较好的结果.采用20节GaAs FET行波结构,300 ps的触发脉冲经过多个250 ps的延迟,通过计算机控制每个FET状态,实现了输出宽度大于5 ns且脉冲的形状任意可调的脉冲信号.输出脉冲经过滤波和放大,输出幅度达到10 V.     

Experimental 6-GHz frozen wave generator with fiber-optic feed

Experimental results from an optically activated 6 GHz frozen wave generator (FWG) test device are presented. The several system components needed to produce a low-cost monolithic pulsed power source suitable for large phased arrays are demonstrated. Static electric energy stored in 50 ohm microstrip transmission lines is released by fast GaAs photoconductive (PC) switches activated by 50 picosecond laser pulses distributed over fiber-optics. The present device is of hybrid construction, using commercial fiber-optic pigtailed integrated optic couplers and semi-insulating (SI) GaAs metal-semiconductor-metal (MSM) photoconductive switch chips bonded into microstrip. However, exclusive of the laser, the design lends itself to monolithic microwave and integrated optic techniques especially at high frequencies. Experimental test results compare well with circuit simulation predictions, showing that hybrid techniques introduce negligible parasitics at the design frequency. Lower resistance PC switches are needed to fully demonstrate the high power performance capabilities of this type of device     

X-band MIC GaAs IMPATT amplifier module

A compact (2.0 by 1.6 in), light weight (2.1 oz), microwave integrated circuit (MIC) GaAs IMPATT amplifier module having 3.6-W pulsed output power with a gain of 22.5 dB over the 9.2-9.8 GHz band has been developed for phased array radar applications. The design goal for the module was 4-W pulsed output power with 23-dB gain over this frequency band. The module has been operated over a wide range of pulse lengths (200 ns-50 /spl mu/s) and duty factors (0.5-40 percent) with outstanding pulse fidelity. The totally integrated module consists of three IMPATT reflection amplifier stages in cascade with input and output isolators and a transmit/receive switch. Each amplifier stage has an independent hybrid thin film constant current pulse modulator. The design considerations of the essential components for final module integration, and the microwave performance characteristics are presented.     

Germanium P-N-P-N switches

Transistors having bases from 90 to 220 mils wide, with the base contact placed near the collector, have shown marked current gain increases with current, peaking at values from 0.1 to 0.3. This effect is due to drift of the injected carriers in the base electric field set up by the emitter current. If the base contact is placed near the emitter, only very small values of α are obtained. Germanium p-n-p-n diode and triode switches were made to operate primarily on the base field mechanism. They had one very wide (p-type) and one very narrow (n-type) base. The base contact for the switching triode may be placed either on the wide base but near the narrow base, or on the narrow base. In the latter case, much less current is required to switch the device from the high resistance to the high conductance region. When used as n transistor, the dc grounded base current gain of the p-n-p-n triode passes through unity at the turn-off current. A p-n-p-p+ structure, as a component part of the p-n-p-n triode with base contact on the wide base region, is shown to act as a switching diode in much the same way as the germanium p-n-pm unit. When the base contact is made to a narrow base bar-type transistor structure, overlap onto emitter and collector regions often results in a current gain that increases with current. This effect may also be utilized in making p-n-p-n switches.