半导体/超晶格分布布拉格反射镜(DBR) 的分子束外延生长

用分子束外延技术(MBE)生长了以GaAs/AlAs超晶格替代AlxGa1-xAs所形成的P型半导体/超晶格分布布拉格反射镜(DBR)．此分布布拉格反射镜的反射谱中心波长为850nm．由实验表明,19个周期的反射镜获得了高达99％以上的高反射率．与此同时,采取自行设计的二次钨丝掩膜质子注入法制成15μm×15μm的正方形电流注入区,以此测定P型反射镜的串联电阻,克服了湿化学腐蚀法中腐蚀深度不易控制及侧面同时被腐蚀的缺点,实验得出此P型反射镜的串联电阻仅为50Ω左右．在生长过程中,发现在只含一个铝源的分子束外延生长系统中,生长这种半导体/超晶格反射镜相对其他半导体/半导体反射镜要节省很多外延生长时间,因此较适合应用于多层结构的光电器件中．     

P—type AlAs／[GaAs／AlAs]Semiconductor／Superlattice DBR Grown by MBE

A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n +-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental reflection spectrum shows that its central wavelength is 820 nm, with the peak reflectivity for 10-pair DBR of as high as 96 %, and the reflection bandwidth of as wide as 90 nm. We formed a 20×20 μm 2 square mesa to measure the series resistance using wet chemical etching. From the measurement result, the series resistance of about 50 Ω is obtained at a moderate doping (3×10 18 cm -3 ). Finally, the dependence of the resistance of the DBR on the temperature is analyzed. From the experimental result, it is found that the mechanism of the low series resistance of this kind of DBR may increase the tunneling current in the semiconductor/superlattice mirror structure, which will result in a decrease in series resistance.     

Widely tunable 850-nm metal-filled asymmetric cladding distributed Bragg reflector lasers

Broadly tunable distributed Bragg reflector (DBR) lasers utilizing metal-filled surface-etched diffraction gratings were fabricated on a GaAs-unstrained quantum well with AlGaAs core and cladding layers. Devices with 200- and 400-/spl mu/m gratings sections were fabricated. Single-mode devices are fabricated over a broad spectral range, exhibiting over 55 mW of single-facet output power. The optical properties of this structure are analyzed in terms of effective index step between the peak and valley of the grating and scattering loss in the DBR. Discrete devices were fabricated with lasing wavelengths between 846.6 and 862.9 nm at intervals of 1.44nm, representing a range of 16.3 nm. Wavelength tuning by current injection into the DBR section is explored, and a broad tuning range of over 18 nm is measured while single-mode performance is maintained. The spectral linewidth of these devices is measured. The temperature dependence of light versus current, threshold current values, and spectral characteristics are also examined.     

Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR

In this letter, we present the first demonstration of a long wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) using an InP-InAlGaAs distributed Bragg reflector (DBR). The use of such a DBR improves the thermal resistance of the VCSEL while keeping the growth process simple. The devices show operation to temperatures greater than 75/spl deg/C, and single-mode devices emit powers as high as 0.9 mW at room temperature. The tuning range is as high as 17 nm.     

Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range

A design for a highly tunable long-wavelength LED/photodetector has been investigated. The device consists of a GaAs-based distributed Bragg reflector (DBR) that is wafer-bonded to InP-based active layers, with a surface-micromachined tunable top DBR mirror to produce the wavelength shift. A 1.5-/spl mu/m device has been fabricated with a continuous tuning range of 75 nm. An extinction ratio of greater than 20 dB existed across the entire tuning range.     

Performance of polysilicon gate HfO/sub 2/ MOSFETs on [100] and [111] silicon substrates

Mobility dependence on Si substrate orientations was investigated for HfO/sub 2/ MOSFETs for the first time. High-temperature (600 /spl deg/C) forming gas (FG) annealing (HT-FGA) was applied on the devices on both [100] and [111] substrates to evaluate the mobility for optimal interfacial quality. Using HT-FGA, D/sub it/ of the [111] devices was reduced down below 1 /spl times/ 10/sup 12/ cm/sup -2/V/sup -1/. Similar to SiO/sub 2/ devices, NMOS mobility of the [111] devices was lower than that of the [100] devices at higher effective fields, while it was reversed for PMOSFETs.     

Dual-wavelength InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers with tunable mode separation

The design and operation of integrated dual-wavelength sources are reported. These InGaAs-GaAs ridge waveguide (RW) distributed Bragg reflector (DBR) lasers consist of a common gain section and two, separate DBR sections. Multiple current injection is not necessary for these lasers to operate in dual-wavelength. Dual-wavelength operation is easily achieved by simply biasing the gain section. A relatively low coupling coefficient /spl kappa/ in the front grating reduces the added cavity loss for the back grating mode. Therefore, the back grating mode reaches threshold easily. Also, the addition of a spacing section lowers the current induced thermal interaction between the two uniform grating sections, significantly reducing the inadvertent wavelength drift. As a result, biasing the front DBR section results in tunable mode pair separations (/spl Delta//spl lambda/) as small as 0.3 nm and as large as 6.9 nm.     

Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings

The design and operation of InGaAs-GaAs ridge-waveguide distributed Bragg reflector (DBR) single quantum-well lasers with first-order surface gratings fabricated using only a single growth step are presented. Uncoated devices exhibit CW threshold currents as low as 6 mA with slope efficiencies of 0.46 W/A. By varying the period of the first-order DBR grating, a wavelength range of 540 /spl Aring/ (/spl sim/15.2 THz) is obtained with the threshold currents and slope efficiencies remaining below 10 mA and above 0.40 W/A, respectively, over the entire wavelength range. High characteristic temperature, T/sub 0/, values of 450 K, as measured between T=10/spl deg/C and 40/spl deg/C, are obtained for devices with Bragg wavelengths positively detuned from the peak gain wavelength. The spectral linewidth minimum of these devices is below 25 kHz, which is the resolution limit of the self-heterodyning system used to measure the spectral linewidth.     

1.3 /spl mu/m InGaAsN vertical cavity surface emitting lasers grown by MOCVD

The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 /spl mu/m are reported. The devices were of conventional p-i-n structure with doped DBR mirrors. CW lasing up to 65/spl deg/C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for single-mode devices.     

Formation conditions of random laser cavities in annealed ZnO epilayers

The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent and coherent random lasing phenomena are observed from ZnO epilayers with (220)- and [200]-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be /spl sim/4 and /spl sim/0.4 nm, respectively.     

Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact

The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n/sup +/-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n/sup +/-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6/spl times/10/sup -3//spl Omega//spl middot/cm/sup 2/. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n/sup +/-SPS upper contact was slightly higher than that of the LED with Ni-Au on n/sup +/-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n/sup +/-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.     

On-chip solid-state cooling for integrated circuits using thin-film microrefrigerators

An overview of recent advances in solid-state cooling utilizing thin-film silicon germanium-based microrefrigerators is given. Key parameters affecting micro cooler performance are described. A 3-/spl mu/m thick 200/spl times/ (3 nm Si/12 nm Si/sub 0.75/Ge/sub 0.25/) superlattice device can achieve maximum cooling of 4/spl deg/C at room temperature, maximum cooling power density of 600 W/cm/sup 2/ for 40-/spl mu/m diameter device and fast transient response on the order of tens of micro-seconds independent of the device size. Three-dimensional electrothermal simulations show that individual microrefrigerators could be used to remove hot spots in silicon chips with minimal increase in the overall power dissipation.     

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and f/sub max/ and low C/sub cb//I/sub c/ ratio

We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub /spl tau// and 459-GHz f/sub max/, which is to our knowledge the highest f/sub /spl tau// reported for a mesa InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a C/sub cb//I/sub c/ ratio of 0.28 ps/V at V/sub cb/=0.5 V. The V/sub BR,CEO/ is 5.6 V and the devices fail thermally only at >18 mW//spl mu/m/sup 2/, allowing dc bias from J/sub e/=4.8 mA//spl mu/m/sup 2/ at V/sub ce/=3.9 V to J/sub e/=12.5 mA//spl mu/m/sup 2/ at V/sub ce/=1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm.     

Sub-mA threshold 1.5-/spl mu/m VCSELs with epitaxial and dielectric DBR mirrors

In this letter, we report low threshold 1.5-/spl mu/m vertical-cavity surface-emitting lasers with epitaxial and dielectric distributed Bragg reflector (DBRs). The device consists of a lattice-matched InAlAs-InAlGaAs DBR grown on an InP substrate, an InAlGaAs quantum well active region, a metamorphic GaAs tunnel junction, and a SiO/sub 2/-TiO/sub 2/ dielectric DBR. The current confinement is achieved by oxidizing an AlAs metamorphic layer grown on top of the active region. Small aperture devices show a minimum threshold of 0.8 mA at room temperature in continuous-wave operation.     

Continuously tunable 1.55-/spl mu/m VCSEL implemented by precisely curved dielectric top DBR involving tailored stress

We present an optically pumped and continuously tunable 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL). The device shows 26-nm spectral tuning range, 400-/spl mu/W maximum output power, and 57-dBm side-mode suppression ratio. The VCSEL is implemented using a two-chip concept. The movable top mirror membrane is precisely designed to obtain a tailored air-gap length (L'=16 /spl mu/m) and a radius of curvature (ROC=4.5mm) in order to efficiently support the fundamental optical mode of the plane-concave resonator. It consists of a distributed Bragg reflector (DBR) with periodic, differently stressed silicon nitride and silicon dioxide multilayers implemented by plasma-enhanced chemical vapor deposition. The lower InP-based part, comprising the InP-InGaAsP bottom DBR and the active region, is grown monolithically using metal-organic vapor phase epitaxy.     

Parametric study of modal gain and threshold power density in electrically pumped single-layer organic optical amplifier and laser diode structures

In this paper, a model to calculate the modal gain in organic optical amplifiers and the laser threshold power density in organic laser diode structures is presented. We consider a single-layer design to investigate the dependence of the modal gain and threshold power density on electron and hole mobility, injection barriers, the thickness of the active layer, as well as exciton dissociation at the injecting contacts. A figure of merit is introduced to quantify the influence of absorption by polarons in optical amplifiers. We show that equal charge carrier mobilities are of crucial importance to achieve appreciable gain on the order of 1/cm at a power density of P= 50 kW/cm/sup 2/ for the considered poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV)-like model material. Increasing the injection barriers to /spl phi//sub b//spl ap/ 0.3 eV decreases the gain marginally but is beneficial in terms of polaron absorption. Regarding modal gain, there is an optimum thickness for the active layer of d/spl ap/ 200 nm, if different devices are compared on the basis of equal power density. We derive power laws for the dependence of modal gain on mobility and power density, which can serve as guidelines for future device design considerations. We determine the maximum allowed polaron absorption cross section /spl sigma//sub abs/ relative to the cross section /spl sigma//sub stim/ for stimulated emission that may not be exceeded to achieve positive net gain necessary for optical amplification. For the most favorable parameters, /spl sigma//sub abs/ has to be at least 20 times smaller than /spl sigma//sub stim/. The dependence of the laser threshold power density on all of the above-mentioned parameters is investigated. We show that, in the optimum case considered, the power density necessary for lasing is 40 times higher than the highest value reported in the literature.     

Nanoscale Thermal Transport and Microrefrigerators on a Chip

In this paper we review recent advances in nanoscale thermal and thermoelectric transport with an emphasis on the impact on integrated circuit (IC) thermal management. We will first review thermal conductivity of low-dimensional solids. Experimental results have shown that phonon surface and interface scattering can lower thermal conductivity of silicon thin films and nanowires in the sub-100-nm range by a factor of two to five. Carbon nanotubes are promising candidates as thermal vias and thermal interface materials due to their inherently high thermal conductivities of thousands of W/mK and high mechanical strength. We then concentrate on the fundamental interaction between heat and electricity, i.e., thermoelectric effects, and how nanostructures are used to modify this interaction. We will review recent experimental and theoretical results on superlattice and quantum dot thermoelectrics as well as solid-state thermionic thin-film devices with embedded metallic nanoparticles. Heat and current spreading in the three-dimensional electrode configuration, allow removal of high-power hot spots in IC chips. Several III-V and silicon heterostructure integrated thermionic (HIT) microcoolers have been fabricated and characterized. They have achieved cooling up to 7 /spl deg/C at 100 /spl deg/C ambient temperature with devices on the order of 50 /spl mu/m in diameter. The cooling power density was also characterized using integrated thin-film heaters; values ranging from 100 to 680 W/cm/sup 2/ were measured. Response time on the order of 20-40 ms has been demonstrated. Calculations show that with an improvement in material properties, hot spots tens of micrometers in diameter with heat fluxes in excess of 1000 W/cm/sup 2/ could be cooled down by 20 /spl deg/C-30 /spl deg/C. Finally we will review some of the more exotic techniques such as thermotunneling and analyze their potential application to chip cooling.     

0.85-/spl mu/m vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate

We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-/spl mu/m 8/spl times/8 bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type GaAs substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.     

Design for high-power single-mode operation from 2-D surface-emitting ROW-DFB lasers

Stable single-mode single-lobe operation to high powers is predicted for two-dimensional surface-emitting lasers, if second-order distributed feedback/distributed Bragg reflector (DFB/DBR) gratings are preferentially placed in the elements of a resonant-optical-waveguide array. Beside their usual functions (i.e., feedback and outcoupling), the gratings act as an effective array-mode selector due to different interaction with the gratings of different array modes. The in-phase array mode is strongly favored to lase around its (lateral) resonance due to better field overlap with DFB region and lower interelement absorption loss than for nonresonant array modes. For 20-element arrays with 700/600 /spl mu/m DFB/DBR gratings, emitting at /spl lambda/=0.98 /spl mu/m, high (/spl sim/100 A/cm/sup 2/) intermodal discrimination /spl Delta/J/sub th/ is obtained. /spl Delta/J/sub th/ is enhanced to /spl sim/225 A/cm/sup 2/ by introducing free-carrier absorption in the array-interelement regions.     

Compact hybrid master oscillator power amplifier with 3.1-W CW output power at wavelengths around 1061 nm

A hybrid master oscillator power amplifier (MOPA) laser source has been realized by coupling a single-mode three-section distributed Bragg reflector (DBR) laser as master oscillator and a tapered power amplifier with a single lens only. A maximum continuous-wave optical output power of 3.1 W was achieved. The emission spectrum was completely determined by the DBR laser. Single longitudinal mode operation at a wavelength of /spl lambda/=1061 nm was maintained over the whole power range. Up to an output power of 1.8 W, the beam propagation factor M/sup 2/was less than 1.6.