Iterative decoding of parallel and serial concatenated single parity check product codes

An efficient, iterative soft-in-soft-out decoding scheme is employed for the parallel and serially concatenated single parity check (SPC) product codes, which has very low complexity, requiring only two addition-equivalent-operations per information bit. For a rate 0.8637 of parallel concatenated SPC product code, a performance of BER=10/sup -5/ at E/sub b//N/sub 0/=3.66 dB can be achieved using this decoding scheme, which is within 1 dB from the Shannon limit.     

0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs

RF and microwave noise performances of strained Si/Si_0.58 Ge_0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded f_T=49 GHz, f_max =70 GHz and a record intrinsic g_m=700 mS/mm. A de-embedded minimum noise figure NF_min=0.3 dB with a 41 Ω noise resistance R_n and a 19 dB associated gain G_ass are obtained at 2.5 GHz, while NF_min=2.0 dB with G_ass=10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications     

Full-wave analysis of choking characteristics of sleeve balun oncoaxial cables

An optimal design for a sleeve balun with maximum choking on a coaxial cable is determined using a full-wave body of revolution finite difference time domain method with perfectly matched layer boundary conditions. An analysis of the sensitivity of choke length L and outer diameter R₂ on choking effectiveness was carried out. A balun with L=77.5 mm (0.232λ₀) and R₂=8 mm on a cable with R₁=2 mm (R₂/R₁=4) results in an S₂₁ of -20 dB at 900 MHz and -15.5 dB at 2730 MHz. The isolation of the balun at 900 MHz is quickly degraded as the R₂ /R₁ ratio is reduced below 2. Increasing R₂/R₁ to 8, results in a reduction of optimum balun length L to approximately 0.215λ₀, approximately 14% shorter than the typical recommended length for an 'ideal' quarter-wave balun     

An acoustooptic phased array antenna beamformer with independentphase and carrier control using single sideband signals

An acoustooptic phase-array antenna beamformer is experimentally demonstrated using single sideband signals with frequencies ω_c+ω₀ and ω_c-ω ₀ to drive the two acoustooptic devices, respectively. Varying ω_c controls the antenna carrier (2ω_c ), while changing ω₀ only effects the phase. Phase control of 0-2π is achieved using 0-340 kHz change in ω ₀, with the carrier fixed at 120 MHz using ω_c=60 MHz. A dynamic range of 66.6 dB at 2 MHz and carrier-to-noise of 126.9 dB/Hz at 2 MHz is measured. This beamformer can provide wide antenna tunable bandwidth and intrapulse beam forming     

Low Rayleigh scatteringP2O5-F-SiO2 glasses

The Rayleigh scattering and infrared absorption losses of P₂ O₅-F-doped silica glass, which is a candidate material for ultra-low-loss optical fiber, were investigated experimentally. The Rayleigh scattering loss of 8.5 wt.% P₂O₅ and 0.3 wt.% F-doped SiO₂ glass is found to be 0.8 times that of pure silica glass. It is also found that the infrared absorption property of P₂O₅-F-SiO₂ glass is almost the same as that of pure silica glass. The minimum loss for the proposed composition is estimated to be 0.11 dB/km at 1.55 μm wavelength, and 0.21 dB/km at 1.3 μm wavelength     

Performance evaluation of COFDM for digital audio broadcasting. II.Effects of HPA nonlinearities

For pt. I see ibid. vol.43, no.1, p.64-75, 1997. The effects of the high power amplifier (HPA) nonlinearities on the performance of the Eureka 147 DAB system are studied by computer simulation. The performance is determined for three types of HPA: a travelling wave tube amplifier (TWTA), a solid state power amplifier (SSPA) and a perfectly linearized amplifier (PLA). Two related performance criteria are used: (a) the degradation, resulting from HPA nonlinearities, in the E_b /N₀ ratio required at the receiver to maintain a bit error rate of 10^-4 and (b) the total power degradation. These degradations are measured as a function of the HPA output backoff (OBO). The effect, on the E_b/N₀ degradation, of linearizing only the phase or only the amplitude transfer characteristic of the TWTA and the SSPA is also assessed. Correcting the phase distortion alone in both HPAs is found to reduce the E_b/N₀ degradation by less than 0.5 dB. Linearization of the amplitude characteristic alone, on the other hand, can reduce the E_b/N₀ degradation by several dBs at small OBO values (<2 dB). The optimum output backoff which minimizes the total power degradation is between 2 and 3 dB for both the TWTA and the SSPA in a terrestrial mobile channel and between 1 and 2 dB in an AWGN channel. The optimum output backoff for the PLA is 2 dB in the terrestrial channel and between 1 and 2 dB in the AWGN channel. At the optimal operation point, the power saved by linearizing the amplitude and phase characteristics of the TWTA or the SSPA is about 0.6 dB for the terrestrial mobile channel and 0.4 dB for the AWGN channel     

Low-power performance of 0.5-μm JFET for low-cost MMIC's inpersonal communications

The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported. A 0.5-μm×100-μm E-JFET with a threshold voltage of V_th=0.3 V achieved a maximum DC transconductance of g_m=489 mS/mm at V _ds=1.5 V and I_ds=18 mA. Operating at 0.5 mW of power with V_ds=0.5 V and I_ds =1 mA, the best device on a 3-in wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-in wafer the average noise figure was F_min=1.2 dB and the average associated gain was G_a=9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications     

Design techniques for VHF/UHF high-Q tunable bandpass filters usingsimple CMOS inverter-based transresistance amplifiers

In this paper, CMOS inverter-based wideband transresistance R_m amplifiers are proposed and analyzed. Using the R_m amplifiers, tunable VHF/UHF R_m-C bandpass biquadratic filters can be designed. In these filters, the center frequency f₀ can be post-tuned by adjusting the control voltages of the R_m amplifiers. The pseudodifferential configuration uses the extra inversely connected and self-shorted inverters for Q enhancement. Experimental results have shown that the center frequency f₀ of the single-ended-output R_m-C bandpass biquad is 386 MHz (258 MHz) and Q=1.195 (Q=1.012) for ±2.5 V (±1.5 V) supply voltage. The power consumption is 24.83 mW (3.42 mW), and the dynamic range is 61 dB (55.5 dB). For pseudodifferential-output high-Q configuration, the measured quality factor Q can be as high as 360 with f₀=222.7 MHz. When Q=94, the power consumption is 56.2 mW and the measured dynamic range is 57.8 dB for 12.5 V supply voltage     

10 GHz dual-conversion low-IF downconverter with microwave and analogue quadrature generators

A 10 GHz dual-conversion low-IF downconverter using 0.18-mum CMOS technology is demonstrated. The high-frequency quadrature RF and LO₁ signals are generated by broadside-coupled quadrature couplers while a two-section polyphase filter is utilised for the low-frequency LO₂ quadrature signal generation. As a result, the demonstrated downconverter achieves a conversion gain of 7 dB, IP_{1 dB} of -16 dBm, IIP₃ of -5 dBm and noise figure of 26 dB at a 1.8 V supply. The image-rejection ratio of the first/second image signal is 33/42 dB for IF frequency ranging from 10 to 60 MHz, respectively.     

Reconfigurable SiGe Low-Noise Amplifiers With Variable Miller Capacitance

A new input matching method making use of shunt-shunt feedback capacitance is introduced. Based on the new input matching method, reconfigurable SiGe low-noise amplifiers (LNAs) by varying shunt-shunt feedback capacitance are proposed. Two approaches are used to vary the shunt-shunt feedback capacitance. One approach is to switch between two different bias currents while the other is to use a series combination of a switch and a capacitor. Miniaturized fully monolithic reconfigurable SiGe LNAs without emitter degenerative inductors were realized by the above two approaches. The reconfigurable SiGe LNA achieved by switching bias currents only occupies a very small area of 355 mumtimes155 mum, excluding measurement pads. This LNA achieves an input return losses (S₁₁) of -27.6 dB, a voltage gain (A _v) of 19.8 dB, and a noise figure (NF) of 3.18 dB for 2.4-GHz band when biased at a current of 3.8 mA and can be reconfigured to obtain A_v=20.4/20.3 dB, S₁₁=-47.1/-24.6 dB and NF=3.42/3.21 dB for 5.2/5.7-GHz band when bias current is switched to 3 mA. In addition, a 2.4/4.9/5.2/5.7-GHz reconfigurable SiGe LNAs for WLAN applications, whose variable shunt-shunt feedback capacitance is controlled by a switch and a capacitor, was also realized     

Noise performance of low power 0.25 micron gate ion implantedD-mode GaAs MESFET for wireless applications

We report on the noise performance of low power 0.25 μm gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 μm×200 μm D-mode MESFET has a f_t of 18 GHz and f_max of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F_min=0.65 dB and G_assoc =13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications     

A 60-dB gain, 55-dB dynamic range, 10-Gb/s broad-band SiGe HBTlimiting amplifier

A limiting amplifier IC implemented in a silicon-germanium (SiGe) heterojunction bipolar transistor technology for low-cost 10-Gb/s applications is described. The IC employs 20 dB gain limiting cells, input overload protection, split analog-digital grounds, and on-chip isolation interface with transmission lines. A gain enhancement technique has been developed for a parallel-feedback limiting cell. The limiting amplifier sensitivity is less than 3.5 mV_pp at BER=10^-9 with 2-V_pp maximum input (55-dB dynamic range). The total gain is over 60 dB, and S₂₁ bandwidth exceeds 15 GHz at 10-mV_pp input. Parameters S₁₁ and S₂₂ are better than -10 dB in the 10-GHz frequency range. The AM to PM conversion is less than 5 ps across input dynamic range. The output differential voltage can be set from 0.2 to 2 V_pp with IC power dissipation from 250 mW to 1.1 W. The chip area is 1.2×2.6 mm². A 10-Gb/s optical receiver, built with the packaged limiting amplifier, demonstrated -19.6-dBm sensitivity. The IC can be used in 10-Gb/s fiber-optic receivers requiring high sensitivity and wide input dynamic range     

3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique

In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S₁₁ below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S₂₁ of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P₁ dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.     

Low-loss proton-exchanged waveguide in MgO-doped LiNbO3fabricated with pyrophosphoric acid using Ta2O5protective mask

The authors describe low-loss proton-exchanged channel waveguides in MgO-doped LiNbO₃. The authors demonstrate the application of a Ta₂O₅ film for the protective mask material in proton-exchanging instead of a Ta film in order to reduce the propagation loss. A Ta₂O₅ sputtered film was applied as a protective mask with pyrophosphoric acid. The propagation loss of the waveguide, measured with laser diode light (λ=0.83 μm) was 0.5 dB/cm. It is shown that the use of a Ta₂O₅ mask reduces the propagation loss compared with the use of a Ta mask (1.5 dB/cm)     

Multilayer Dual-Mode Dual-Bandpass Filter

A dual-mode dual-bandpass filter for the U-NII bands is proposed and demonstrated. Its effective size reduction is achieved by using a multilayer configuration. The first and the third layers incorporate microstrip dual-mode bandpass filters with operating center-frequencies of f₁ =5.2 GHz and f₂ =5.8 GHz, respectively. The second layer is used as a common ground plane for both filters, which also serves as a decoupling interface. Capacitive coupling transition is used to connect both filters to I/O coplanar waveguide (CPW) ports. Single and dual-band passband filter prototypes are designed, fabricated, and measured in this work, thus validating the design principle. Designed topologies of single passband filters with center frequencies of 5.2 and 5.8 GHz exhibit an out-of-band rejection better than 40 dB with a 3 dB bandwidth of 5.8% and 6%, respectively. The proposed multilayer dual-passband response with center frequencies of 5.2 and 5.8 GHz provide band-to-band isolation better than 30 dB. Measured insertion losses are lower than 2.76 dB, with 3 dB bandwidth lower than 5%.     

Low-loss polyimide-Ta2O5-SiO2hybrid ARROW waveguides

A low-loss polyimide-Ta₂O₅-SiO₂ hybrid antiresonant reflecting optical waveguide (ARROW) is presented. The ARROW device was fabricated using both the organic and dielectric thin-film technologies. It consists of the fluorinated polyimide, tantalum pentoxide (Ta₂O₅), and silicon dioxide (SiO₂) hybrid layers deposited on a Si substrate. For transverse electric polarized light, the propagation loss of the waveguide as low as 0.4 dB/cm was obtained at 1.31 μm. The propagation loss for transverse magnetic polarized light is 1.5 dB/cm. An ARROW waveguide fabricated using the polyimide-Ta₂O₅ -polyimide material system is also presented for comparison     

InGaP/InGaAs HFET with high current density and high cut-offfrequencies

Doped channel pseudomorphic In_0.49Ga_0.51P/In _0.20Ga_0.80As/GaAs heterostructure field effect transistors have been fabricated on GaAs substrate with 0.25 μm T-gates and self-aligned ohmic contact enhancement. By introducing the channel doping and reducing the series resistances, a high current density of 500 mA/mm is obtained in combination with cut off frequencies of f_T=68 GHz and f_max=160 GHz. The channel doping did not affect the RF-performance of the device essentially, which is additionally reflected in noise figures below 1.0 dB with an associated gain of 14.5 dB at 12 GHz     

Erbium-doped single- and double-pass Ti:LiNbO3 waveguideamplifiers

Single-pass and double-pass Er-diffused Z- and X-cut Ti:LiNbO₃ waveguide amplifiers, optically pumped at λ _p≈1484 nm, have been investigated. With a 48 mm long Z-cut amplifier device, Er-diffusion doped at 1100°C, 6.7 dB (coupled pump power P_p,c=170 mW) and 14.7 dB (P_p,c=90 mW) net small-signal gain have been achieved with a single-pass and a double-pass configuration, respectively, at the signal wavelength λ_s=1531 nm. A Z-cut sample doped at 1135°C showed a considerably improved behavior. 11.3 dB single-pass net small-signal gain has been obtained (P_p,c=170 mW; sample length 5.7 cm). Theoretical calculations predict gain figures up to 20 dB in single-pass and 40 dB in double-pass Er:Ti:LiNbO₃ amplifiers with increased (realistic) lengths of 10 cm     

Multiuser detectors with decision feedback for asynchronousspread-spectrum multiple access in multipath fading channels

This paper extends earlier work of the authors to the multipath fading channel. For a normalized Doppler spread of f_DT=0.005 we show that a reduced state sequence estimation reduced-complexity receiver with K_s=2 users per state and a processing gain of N _s=127 performs only 0.5 dB worse than the single-user receiver for a bit-error rate of 10^-4     

2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation

A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay variation is only plusmn 16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S₁₁) of -17.5 to -33.6 dB, output return loss (S₂₂) of -14.4 to -16.3 dB, flat forward gain (S₂₂) of 7.92 plusmn 0.23 dB, and reverse isolation (S₁₂) of -25.8 to -41.9 dB over the 3.1-10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.