硅基PZT压电功能结构

为获得适合单片集成的硅基PZT压电功能结构,对近年PZT薄(厚)膜在MEMS领域的研究现状进行了综述分析,提出了一种新型的双杯PZT/Si膜片式功能结构.采用有限元方法对双杯PZT/Si膜片进行了结构优化,得到PZT和上下硅杯的结构优化值为DPZT∶D1∶D2 =0.75∶1.1∶1,一阶模态谐振频率为13.2 kHz.以氧化、双面光刻、各向异性刻蚀以及精密丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片,膜片具有压电驱动功能,PZT压电膜厚达80 μm.实验表明,双杯PZT/Si膜片式功能结构的MEMS技术兼容性好,对芯片内其它元件或电路的影响小,适合作为MEMS片内执行元件的驱动机构.     

MEMS兼容PZT压电厚膜的性能测试

丝网印刷法制备PZT厚膜工艺与MEMS技术兼容.通过调整PZT印刷浆料粘度,并采取多次套印、多次退火及合理的烧结工艺,在硅膜片上获得了较致密的PZT厚膜.采用悬臂梁方法对制备的Ag/PZT/SiO2/n+Si结构复合压电厚膜进行了直接测试,结果表明PZT压电厚膜的压电常数d31可达70×10-12m/V,以此方法制备的压电厚膜适合作为MEMS执行器的微驱动元件.     

基于PZT薄膜的集成式微悬臂梁结构设计与制作

设计了基于PZT压电薄膜的双层和双片压电微悬臂梁结构,利用压电材料的正压电效应和逆压电效应,通过两个压电元件实现传感和执行功能的集成.悬臂梁结构采用体硅加工工艺制作,锆钛酸铅(Pb(Zr,Ti)O3,PZT)压电薄膜采用sol-gel方法在Pt/Ti/SiO2/Si衬底上制作,压电薄膜具有完整的钙钛矿结构和(111)择优取向.为了提高悬臂梁的性能和制作成品率,对制作微悬臂梁的关键工艺进行了优化.     

利用体块PZT制备膜片式压电微泵

利用锆钛酸铅(PZT)的逆压电效应,设计并制备了膜片式压电微泵。通过将电能转换为机械能,实现了液体的微流体控制。微泵由微驱动器与单向微阀两部分组成;微驱动器主要为液体流动提供驱动力,单向微阀则用于精确控制液体的流动方向。通过对PZT-Si膜片的位移量、位移形状的仿真分析,确定了微驱动器的设计尺寸,并估算其液体驱动性能。利用共晶键合工艺、研磨减薄工艺、硅深反应离子刻蚀工艺和准分子激光加工工艺等制备出了微驱动器和单向微阀。最后,设计了驱动测试实验,检测了微泵的液体驱动性能。测试结果表明:所制备的膜片式压电微泵驱动的谐振频率约为70kHz,能驱动微米量级的液体位移或运动。当微泵驱动电压为30Vp-p、频率为600Hz时,液体的驱动流速约为65μL/min。该微泵具有体积小,线性度好等特点。     

低频力作用下压电发电模型及实验研究

以PZT/PVDF复合压电材料采用热压工艺制备了压电厚膜,并制做了不锈钢/压电厚膜/金电极结构的压电振子。为了表征压电振子的阻抗特性,在室温下对样品介电特性进行了测量和分析。利用制备的压电振子采用简支支撑方式设计和制作了压电发电装置,运用压电方程对该装置建立了压电发电数学模型,并根据模型影响参数进行压电发电实验研究。实验结果表明,单片压电厚膜在外加作用力频率从0~2 Hz发生变化时,在负载电阻值为105 kΩ左右时单个压电振子可以获得约130μW的最大输出电功率。研究中还发现增加并联的厚膜片数目可以成比例的增加输出功率。     

硅微压传感元件的设计分析及关键技术

本文介绍了圆形膜片E型杯硅微压传感元件的设计原理。并针对硅微压传感元件研制中存在的问题，提出采用化学腐蚀技术，选择性腐蚀工艺控制膜厚。用E型杯代替C型杯的设计，改善非线性误差获得成功。研制出量程≤kPa，精度优于0．5％的微压元件。     

硅基PZT压电驱动扫描微镜的设计与优化

设计并研究了一种硅基PZT压电悬臂梁驱动扫描微镜器件.这种扫描微镜采用单晶硅平面微镜面作为光扫描反射元件,由硅基压电复合弹性悬臂梁作为驱动机构控制水平微镜面偏转实现光信号的扫描.整个光扫描微器件可以阵列方式集成在单个硅芯片上,形成光扫描器阵列.采用数值有限元分析的方法模拟和优化了压电复合弹性悬臂梁驱动扫描微镜的力学性能.分析表明,微镜偏转角与压电悬臂长度和工作电压呈线性关系.在研究了影响光学扫描微镜机电性能各项因素的基础上,给出了器件结构优化的方法.     

基于微型悬臂梁的发电机制探索

微机电系统(MEMS)微型化过程中,要求电源装置也必须向微型化发展.在现有微电源研究基础上,结合微型硅悬臂梁的力学分析以及压电晶体材料压电效应特性,提出一种新的压电陶瓷(PZT)微型硅悬臂梁发电装置.借助微型硅悬臂梁质量块的振动和PZT的正压电效应,实现振动机械能向电能转换.该装置结构简单、体积小、质量小,可以用MEMS集成加工工艺实现结构加工,因此与其他微型MEMS器件可以集成在一个基础上.     

基于圆形振动膜的MEMS压电传声器研究

为提高微电子机械系统(Micro-electro-mechanical systems,MEMS)压电传声器的灵敏度和成品率,提出一种优化设计的圆形振动膜MEMS压电传声器。采用硼扩散方法实现振动膜的圆形支撑墙,避免由于方形支撑墙造成的四角应力集中,并通过深硼扩散技术,增加圆形围墙的厚度,避免了振动膜的"软"支撑问题;振动膜采用Si3N4/SiO2/Si3N4复合结构,减少振动膜的内应力;采用电极分割串联技术,传声器被分割成在声学上并联、在电学上串联的若干部分,以期提高MEMS传声器的灵敏度。在结构优化的基础上,利用MEMS技术制备压电微传声器,所制备传声器振动膜平坦、无褶皱,成品率有了明显提高。在消声室中采用同时比较法对传声器进行测量,优化设计的圆形振动膜传声器的灵敏度有了明显提高,达到0.3 mV/Pa。     

退火制度对PZT铁电薄膜性能的影响

铁电薄膜的性质对于硅基MEMS器件有重要的影响,鉴于此本文尝试通过改善退火工艺以提高PZT薄膜的铁电和压电性质.采用溶胶凝胶法,在Si/SiO2/Ti/Pt衬底上制备了PZT铁电薄膜.实验中,采用一次退火工艺和每层退火工艺制备了两种PZT薄膜,采用XRD对薄膜的晶体结构进行分析,通过C-V和I-V特性的研究发现,每层退火工艺有助于提高PZT薄膜的C-V性质,并降低漏导电流.     

Patterned crack-free PZT thick films for micro-electromechanical system applications

The fabrication and structuring of multilayer-thick film piezoelectric (PZT-lead zirconate titanate) structures, using composite sol-gel techniques and wet etching is described. The composite sol-gel technique involves producing a PZT powder/sol composite slurry which when spun down, yields films a few micrometres thick. Repeated layering and infiltration has been used to produce PZT films between 10 and 40 μm thick. Due to the low firing temperature (<720°C), it has also been possible to produce PZT films with embedded thin (ca. 100 nm thick) metal electrodes. The PZT thick films have also been structured using a wet etching technique. Examples of features and cavities with lateral dimensions in the order of tens of micrometres are presented. The ability to fabricate and structure thick functional films with embedded metal electrode structures offers the possibility to create novel micro-device structures suitable for use in micro-electromechanical systems (MEMS).     

Development of RF magnetron sputtering method to fabricate PZT thin film actuator

PZT piezoelectric very thin films suitable for a microactuator have been deposited onto Invar alloy substrate using a high-temperature RF magnetron sputtering technique. PZT thin films must be deposited onto conductive substrate for a monomorph or a bimorph actuator. The chemical composition and the crystalline structure of these films were measured by ESCA and XRD, respectively. The chemical composition of PZT deposited stoichiometrically was almost the same as commercially-produced bulk PZT. Crystal planes (1 1 0) and (1 1 1) of PZT perovskite structure were observed in XRD analysis. When the substrate was heated to above 600 °C, SEM revealed only a very small number of pinholes on the surface. A thin (500 nm) film actuator has been characterized by measuring the piezoelectric property using a Laser Doppler Vibrograph. It was confirmed that the piezoelectric property has a linear relationship with the grain size, which also increased with the substrate temperature. The piezoelectric property of deposited PZT thin films showed a good agreement with a quoted value of bulk PZT, when the substrates were heated to 600 °C.     

Characterization of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition

In this work, the results of compositional and microstructural analysis of lead zirconate titanate--lanthanum ruthenate thin film structures prepared by chemical solution deposition are discussed. The cross-section transmission electron microscope (TEM) micrographs of the La-Ru-O film deposited on a SiO2/Si substrate and annealed at 700 degrees C revealed RuO2 crystals embedded in a glassy silicate matrix. When the La-Ru-O film was deposited on a Pt/TiO2/SiO2/Si substrate, RuO2 and La4Ru6O19 crystallized after annealing at 700 degrees C. After firing at 550 degrees C randomly oriented lead zirconate titanate (PZT) thin films crystallized on the La-Ru-O/SiO2/Si substrate, while on La-Ru-O/Pt/TiO2/SiO2/Si substrates PZT thin films with (111) preferred orientation were obtained. No diffusion of the Ru atoms in the PZT film was found. Ferroelectric response of PZT thin films on these substrates is shown in comparison with the PZT film deposited directly on the Pt/TiO2/SiO2/Si substrate without a La-Ru-O layer.     

Residual strain measurement of piezoelectric multilayers by spiral structure

A new structure is described to measure the residual strain of thin film of piezoelectric multi-layers. The spiral shaped structure consists of the four fixed-guided beams. Piezoelectric multilayers consisting of SiOx/Pt/PZT/Pt on SiNx substrate are used to evaluate the suggested structure. Finite element analysis predicts that the out-of-plane displacement of the spiral structure by residual stress depends linearly on the beam length, but there is little difference depending on the beam width. PZT is prepared by sol-gel method and multilayered spiral structures are released by microfabrication technique. Sensitivity analysis of the spiral structure with various layer stack shows that the high displacement of piezoelectric multilayers can be decreased by the application of SiOx layer with compressive stress over the piezoelectric multilayers.     

纳米尺度金属薄膜在拉伸状态下的稳定性

将薄膜和基底作为一个基本结构来研究薄膜的变形和损坏可预测纳米薄膜器件的使用寿命.本文讨论和研究了薄膜基底结构在拉伸载荷下薄膜出现的分叉和断裂的过程.用在相同厚度的PET基底上沉积不同厚度铝膜的薄膜基底结构作为试件,分别对薄膜厚度为100,150和200 nm的3种不同试件进行了拉伸加载实验,并在OLYMPUS显微镜下观...     

微电子机械系统的力学特性与尺度效应

针对微电子机械系统（MEMS）材料的力学特性,工艺过程对力学特性的影响以及微执行器、微机器人的尺度效应等力学问题进行了研究。从力学角度提出了硅和常用的薄膜材料作为MEMS结构材料时应遵循的设计和加工原则,并系统地分析、归纳了静电、电磁、压电、形状记忆合金等各种微执行器的尺度效应特征。通过对机器蚂蚁、微型飞机、微型机器鱼等微机器人在微尺度下的动力学特性分析,得到微机器人在尺寸越小时越容易被驱动的结论,为设计和制作微机器人等复杂微系统提供了理论依据。     

The charge storage characteristics of PZT nanocrystal thin film

Lead zirconate titanate (PZT) films have been extensively investigated for many applications: the nonvolatile memory devices based on their remarkable ferroelectric properties, the microelectromechanical system (MEMS) based on their piezoelectricity as well in sensors as in actuators. In this paper, we inject charges into PZT thin films, and then the charge storage and transportation through PZT thin films were observed by electric force microscopy (EFM). Results were studied and charging mechanisms were proposed.     

Quantitative measurement of piezoelectric coefficient of thin film using a scanning evanescent microwave microscope

This article describes a new approach to quantitatively measure the piezoelectric coefficients of thin films at the microscopic level using a scanning evanescent microwave microscope. This technique can resolve 10 pm deformation caused by the piezoelectric effect and has the advantages of high scanning speed, large scanning area, submicron spatial resolution, and a simultaneous accessibility to many other related properties. Results from the test measurements on the longitudinal piezoelectric coefficient of PZT thin film agree well with those from other techniques listed in literatures.     

微光学自适应技术中基于PZT薄膜的微反射镜工艺研究

介绍了微光学自适应技术中基于PZT(PbZrxT i1-xO3)薄膜的微反射镜单元及其制作工艺。该制作过程中用重掺杂硅片作为基底和下电极,采用了钛酸丁脂[(C4H9O)4T i]、乙酸铅[Pb(CH3COO2).3H2O]以及异丙醇锆[Zr(OCH(CH3)2 4.(CH3)2CHOH]为原料,通过溶胶-凝胶法(so l-gel)制作薄膜,薄膜厚度为纳米级。制成的PZT薄膜通过逆压电效应产生形变,对反射镜面局部进行微调,实现波前位相控制。     

Ansys在PZT压电薄膜微传感器压电分析中的应用

研究的PZT压电薄膜微传感器采用的弹性敏感元件为微悬臂梁结构,在压电原理和材料力学理论的基础上,采用简化的等效微器件结构建立了数学分析模型,将有限元方法发展应用于压电材料的结构分析中,并运用有限元软件Ansys7.0对PZT压电薄膜微悬臂梁结构的传感性能和线性度进行了模拟,同时分析了微悬臂梁结构的几何参数对输出电压的影响,这些分析结果和解析预测是一致的。