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1.
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics.Monolayer SnS2,with a band gap of ~2.6 eV,has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin.Till date,there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor.Here,we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity.In addition,the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time.Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers.The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%,suggesting promise for optoelectronic applications.  相似文献   

2.
We systematically investigated the development of film morphology and crystallinity of methyl-ammonium bismuth (III) iodide (MA3Bi2I9) through onestep spin-coating on TiO2-deposited indium tin oxide (ITO)/glass. The precursor solution concentration and substrate structure have been demonstrated to be critically important in the active-layer evolution of the MA3Bi2I9-based solar cell. This work successfully improved the cell efficiency to 0.42% (average: 0.38%) with the mesoscopic architecture of ITO/compact-TiO2/mesoscopic-TiO2 (meso-TiO2)/MA3Bi2I9/2,2′,7,7′-tetrakis(N,N-di-4-methoxyphenylamino)-9,9′spiro-bifluorene (spiro-MeOTAD)/MoO3/Ag under a precursor concentration of 0.45 M, which provided the probability of further improving the efficiency of the Bi3+-based lead-free organic–inorganic hybrid solar cells.
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3.
    
Recent years have witnessed rapid progresses made in the photoelectric performance of two‐dimensional materials represented by graphene, black phosphorus, and transition metal dichalcogenides. Despite significant efforts, a photodetection technique capable for longer wavelength, higher working temperature as well as fast responsivity, is still facing huge challenges due to a lack of best among bandgap, dark current, and absorption ability. Exploring topological materials with nontrivial band transport leads to peculiar properties of quantized phenomena such as chiral anomaly, and magnetic‐optical effect, which enables a novel feasibility for an advanced optoelectronic device working at longer wavelength. In this work, the direct generation of photocurrent at low energy terahertz (THz) band at room temperature is implemented in a planar metal–PtTe2–metal structure. The results show that the THz photodetector based on PtTe2 with bow‐tie‐type planar contacts possesses a high photoresponsivity (1.6 A W?1 without bias voltage) with a response time less than 20 µs, while the PtTe2–graphene heterostructure‐based detector can reach responsivity above 1.4 kV W?1 and a response time shorter than 9 µs. Remarkably, it is already exploitable for large area imaging applications. These results suggest that topological semimetals such as PtTe2 can be ideal materials for implementation in a high‐performing photodetection system at THz band.  相似文献   

4.
    
Sb2O3 molecules offer unprecedented opportunities for the integration of a van der Waals (vdW) dielectric and a 2D vdW semiconductor. However, the working mechanisms underlying molecules-based vdW dielectrics remain unclear. Here, the working mechanisms of Sb2O3 and two Sb2O3-like molecules (As2O3 and Bi2O3) as dielectrics are systematically investigated by combining first-principles calculations and gate leakage current theories. It is revealed that molecules-based vdW dielectrics have a considerable advantage over conventional dielectric materials: defects hardly affect their insulating properties. This shows that it is unnecessary to synthesize high-quality crystals in practical applications, which has been a long-standing challenge for conventional dielectric materials. Further analysis reveals that a large thermionic-emission current renders Sb2O3 difficult to simultaneously satisfy the requirements of dielectric layers in p-MOS and n-MOS, which hinders its application for complementary metal-oxide-semiconductor (CMOS) devices. Remarkably, it is found that As2O3 can serve as a dielectric for both p-MOS and n-MOS. This work not only lays a theoretical foundation for the application of molecules-based vdW dielectrics, but also offers an unprecedentedly competitive dielectric (i.e., As2O3) for 2D vdW semiconductors-based CMOS devices, thus having profound implications for future semiconductor industry.  相似文献   

5.
In order to investigate the photo-induced thermal property changes in chalcogenide thin films, amorphous As 2 S 3 thin film samples, whose thicknesses are 0.5, 1.0, 2.0, and 4.0 m, were prepared on silicon wafers by thermal evaporation. Their thermal conductivity was measured by the 3 method between room temperature and 100 °C. These measurements were repeated after the illumination of an Ar+ laser beam whose photon energy is consistent with the bandgap energy of As 2 S 3, and repeated again for annealed films at 180 °C for 1 h. The result shows that the thermal conductivities of fresh films were 0.14 to 0.27 W·m –1·K –1; however, the values increase to 0.28–0.47 W·m –1·K –1 after illumination of the sample and decrease to 0.19–0.42 W·m –1·K –1 after annealing of the sample. These changes can be explained by the change in microstructure produced from the photo-darkening and thermal annealing.  相似文献   

6.
    
By virtue of the layered structure, van der Waals (vdW) magnets are sensitive to the lattice deformation controlled by the external strain, providing an ideal platform to explore the one-step magnetization reversal that is still conceptual in conventional magnets due to the limited strain-tuning range of the coercive field. In this study, a uniaxial tensile strain is applied to thin flakes of the vdW magnet Fe3GeTe2 (FGT), and a dramatic increase of the coercive field (Hc) by more than 150% with an applied strain of 0.32% is observed. Moreover, the change of the transition temperatures between the different magnetic phases under strain is investigated, and the phase diagram of FGT in the strain–temperature plane is obtained. Comparing the phase diagram with theoretical results, the strain-tunable magnetism is attributed to the sensitive change of magnetic anisotropy energy. Remarkably, strain allows an ultrasensitive magnetization reversal to be achieved, which may promote the development of novel straintronic device applications.  相似文献   

7.
    
The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W−1, with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz−0.5, with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.  相似文献   

8.
9.
Nanomaterial shapes can have profound effects on material properties,and therefore offer an efficient way to improve the performances of designed materials and devices.The rational fabrication of multidimensional architectures such as one dimensional (1D)-two dimensional (2D) hybrid nanomaterials can integrate the merits of individual components and provide enhanced functionality.However,it is still very challenging to fabricate 1D/2D architectures because of the different growth mechanisms of the nanostructures.Here,we present a new solventmediated,surface reaction-driven growth route for synthesis of CdS nanowire (NW)/CdIn2S4 nanosheet (NS) 1D/2D architectures.The as-obtained CdS NW/CdIn2S4 NS structures exhibit much higher visible-light-responsive photocatalytic activities for water splitting than the individual components.The CdS NW/CdIn2S4 NS heterostructure was further fabricated into photoelectrodes,which achieved a considerable photocurrent density of 2.85 mA.cm-2 at 0 V vs.the reversible hydrogen electrode (RHE) without use of any co-catalysts.This represents one of the best results from a CdS-based photoelectrochemical (PEC) cell.Both the multidimensional nature and type Ⅱ band alignment of the 1D/2D CdS/CdIn2S4 heterostructure contribute to the enhanced photocatalytic and photoelectrochemical activity.The present work not only provides a new strategy for designing multidimensional 1D/2D heterostructures,but also documents the development of highly efficient energy conversion catalysts.  相似文献   

10.
We have studied the photoluminescence (PL) of GeO2 and 90 mol % SiO2-10 mol % GeO2 films synthesized by method of RF magnetron sputtering and then irradiated with silicon ions and annealed. The PL of silicon-implanted GeO2 films, related to the presence of Si nanocrystals (nc-Si), was observed for the first time. It is established that the transformation of the defect centers responsible for the PL in the spectral range 350–600 nm, as well as the formation of nc-Si emitting in the region of 700–800 nm, significantly depend on the matrix type. In particular, the PL intensity at 700–800 nm in 90 mol % SiO2-10 mol % GeO2 films is weak. The role of the isovalent substitution of Si and Ge atoms in the transformation of defect centers and the formation of nc-Si is discussed.  相似文献   

11.
12.
Polycrystalline, 50- to 70-nm-thick barium strontium titanate films of composition Ba0.8Sr0.2TiO3 have been grown on single-crystal silicon substrates by rf ion-beam sputtering. We have determined their structure and composition and detected impurities at the film/substrate interface in the form of titanium silicide islands. The deposition of a 4- to 6-nm-thick TiO2 buffer layer onto Si by ion-beam sputtering before ferroelectric film growth is shown to prevent uncontrolled formation of impurities near the interface. The buffered heterostructures possess high thermal stability.  相似文献   

13.
Hierarchically heterostructured hollow spheres are of great interest for a wide range of applications owing to their unique structural features and properties.However,the fabrication of well-defined hollow spheres with highly specific morphology for mixed transition metal oxides on a large scale remains challenging.In this work,uniform rambutan-like heterostructured CeO2-CuO hollow microspheres with numerous copper-ceria interfacial sites and nanorods and nanoparticles as building blocks are prepared via a facile hydrothermal method followed by calcination.Importantly,this approach can be readily scaled up and is applicable to the synthesis of various CuO-based mixed metal oxide complex hollow spheres.The as-prepared CeO2-CuO hollow rambutans exhibit superior performance both as electrode materials for supercapacitors and as Cu-based catalysts for the Rochow reaction,mainly due to the small primary nanopartide constituents,high surface area,and formation of numerous interior heterostructures.  相似文献   

14.
Heterojunction interfaces in perovskite solar cells play an important role in enhancing their photoelectric properties and stability.Till date,the precise lattice arrangement at TiO2/CH3NH3PbI3 heterojunction interfaces has not been investigated clearly.Here,we examined a TiO2/CH3NH3PbI3 interface and found that a heavy atomic layer exists in such interfaces,which is attributed to the vacancies of methylammonium (MA) cation groups.Further,first-principles calculation results suggested that an MA cation-deficient surface structure is beneficial for a strong heterogeneous binding between TiO2 and CH3NH3PbI3 to enhance the interface stability.Our research is helpful for further understanding the detailed interface atom arrangements and provides references for interfacial modification in perovskite solar cells.  相似文献   

15.
Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
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16.
There is great interest in sulfide glasses because of their high lithium ion conductivity. New sulfide glasses based on Li2S-P2S5-Sb2S3 system have been synthesized by a classical quenching technique. A summary of thermal and structural characterization is presented. Electrical conductivities of the samples have been determined by Impedance Spectroscopy. The compositions of low lithium content (below 20% mol) have presented low electronic conductivities close to 10−8 S/cm at room temperature. The compositions of medium lithium content (30–50% mol) have presented mixed ionic-electronic behavior with predominant on ionic conductivity with a maximum values around 10−6 S/cm for samples up to 50% Li2S at room temperature. Arrhenius behavior is verified between 25°C and Tg for all glasses with activation energies about 0.55–0.64 eV. A comparative study of conductivities with glasses belonging to the other chalcogenide systems has been undertaken.  相似文献   

17.
Extruded n-type materials based on Bi2Te3-Bi2Se3 alloys containing 6 to 40 mol % Bi2Se3 have been investigated using microstructural analysis and thermoelectric measurements at room temperature and in the range 100–400 K. Their electrical properties have been compared to those of single-crystal analogs. Compositions have been found at which the extruded materials offer the highest thermoelectric performance in different temperature ranges.  相似文献   

18.
K2Ti6O13/TiO2 bio-ceramic coatings are prepared successfully by micro-arc oxidation on titanium substrate in pure KOH electrolyte solution. The coating is prepared at various applied current density (150–500 mA/cm2) and in KOH electrolyte with different concentrations (0.5–1.2 mol/L). The composition and surface morphologies of coatings are strongly dependent on the applied current density and the electrolyte concentration. On the condition of lower current density and electrolyte concentration, K2Ti6O13 phase almost cannot be formed. The phase is mainly composed of rutile and K2Ti6O13 with increasing current density and electrolyte concentration. The surface morphologies are composed of whiskers and porous structures. The ability of K2Ti6O13/TiO2 bio-ceramic films inducing apatite deposition is evaluated by soaking it in biological model fluids. The results show the K2Ti6O13/TiO2 bio-ceramic coatings possess excellent capability of inducing bone-like apatite to deposit.  相似文献   

19.
To promote commercialization of perovskite solar cells (PSCs), low-temperature processed electron transport layer (ETL) with high carrier mobility still needs to be further developed. Here, we reported two-dimensional (2D) tin disulfide (SnS2) nanosheets as ETL in PSCs for the first time. The morphologies of the 2D SnS2 material can be easy controlled by the in situ synthesized method on the conductive fluorine-doped tin oxide (FTO) substrate. We achieved a champion power conversion efficiency (PCE) of 13.63%, with the short-circuit current density (JSC) of 23.70 mA/cm2, open-circuit voltage (VOC) of 0.95 V, and fill factor (FF) of 0.61. The high JSC of PSCs results from effective electron collection of the 2D SnS2 nanosheets from perovskite layer and fast electron transport to the FTO. The low VOC and FF are the results of the lower conduction band of 2D SnS2 (4.23 eV) than that of TiO2 (4.0 eV). These results demonstrate that 2D material is a promising candidate for ETL in PSCs.
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20.
Recent advances in the research on the molecular mechanism of cell death and methods for preparation of nanomaterials make the integration of various therapeutic approaches,targeting,and imaging modes into a single nanoscale complex a new trend for the development of future nanotherapeutics.Hence,a novel ellipsoidal composite nanoplatform composed of a magnetic Fe3O4/Fe nanorod core (~120 nm) enwrapped by a catalase (CAT)-imprinted fibrous SiO2/ polydopamine (F-SiO2/PDA) shell with thickness 70 nm was prepared in this work.In vitro experiments showed that the Fe3O4/Fe@F-SiO2/PDA nanoparticles can selectively inhibit the bioactivity of CAT in tumor cells by the molecular imprinting technique.As a result,the H2O2 level in tumor cells was elevated dramatically.At the same time,the Fe3O4/Fe core released Fe ions to catalyze the conversion of H2O2 to ·OH in tumor cells.Eventually,the concentration of ·OH in tumor cells rapidly rose to a lethal level thus triggering apoptosis.Combined with the remarkable near-infrared light (NIR) photothermal effect of the CATimprinted PDA layer,the Fe3O4/Fe@F-SiO2/PDA nanoparticles can effectively kill MCF-7,HeLa,and 293T tumor cells but are not toxic to nontumor cells.Furthermore,these nanoparticles show good capacity for magnetic targeting and suitability for magnetic resonance imaging (MRI).Therefore,the integrated multifunctional nanoplatform opens up new possibilities for high-efficiency visual targeted nonchemo therapy for cancer.  相似文献   

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