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1.
Enqing Zhang Zhengkun Xing Dian Wan Haoran Gao Yingdong Han Yisheng Gao Haofeng Hu Zhenzhou Cheng Tiegen Liu 《半导体学报》2021,42(5):27-36
Surface-enhanced Raman spectroscopy (SERS) based on two-dimensional (2D) materials has attracted great attention over the past decade.Compared with metallic materials,which enhance Raman signals via the surface plasmon effect,2D materials integrated on silicon substrates are ideal for use in the fabrication of plasmon-free SERS chips,with the advantages of outstanding fluorescence quenching capability,excellent biomolecular compatibility,tunable Fermi levels,and potentially low-cost material preparation.Moreover,recent studies have shown that the limits of detection of 2D-material-based SERS may be comparable with those of metallic substrates,which has aroused significant research interest.In this review,we comprehensively summarize the advances in SERS chips based on 2D materials.As several excellent reviews of graphene-enhanced Raman spectroscopy have been published in the past decade,here,we focus only on 2D materials beyond graphene,i.e.,transition metal dichalcogenides,black phosphorus,hexagonal boron nitride,2D titanium carbide or nitride,and their heterostructures.We hope that this paper can serve as a useful reference for researchers specializing in 2D materials,spectroscopy,and diverse applications related to chemical and biological sensing. 相似文献
2.
基于搭建的微波调制反射谱测量系统(MMRS),确定了GaAs/AlGaAs异质结构中价带空穴到二维电子系统(2DES)电子基态(GS)的跃迁.微波调制反射谱与温度的依赖关系表明,随着测量温度的升高,能带带隙发生了蓝移现象;而其与磁场的依赖关系表明,随着测量磁场的增大,能带带隙则发生了红移现象;它们均与GaAs/AlGa... 相似文献
3.
Shengxue Yang Yanhan Yang Minghui Wu Chunguang Hu Wanfu Shen Yongji Gong Li Huang Chengbao Jiang Yongzhe Zhang Pulickel M. Ajayan 《Advanced functional materials》2018,28(16)
Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle‐dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in‐plane anisotropy are in the initial stage. Here azimuth‐dependent reflectance difference microscopy (ADRDM), angle‐resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in‐plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in‐plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few‐layer GeAs field‐effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high‐performance devices and the results suggest a general methodology for characterizing the in‐plane anisotropy of low‐symmetry 2D materials. 相似文献
4.
Research on two-dimensional(2D) materials and related van der Waals heterostructures(vdWHs) is intense and remains one of the leading topics in condensed matter physics.Lattice vibrations or phonons of a vdWH provide rich information,such as lattice structure,phonon dispersion,electronic band structure and electron–phonon coupling.Here,we provide a mini review on the lattice vibrations in vdWHs probed by Raman spectroscopy.First,we introduced different kinds of vdWHs,including their structures,properties and potential applications.Second,we discussed interlayer and intralayer phonon in twist multilayer graphene and MoS2.The frequencies of interlayer and intralayer modes can be reproduced by linear chain model(LCM)and phonon folding induced by periodical moiré potentials,respectively.Then,we extended LCM to vdWHs formed by distinct 2D materials,such as MoS2/graphene and hBN/WS2 heterostructures.We further demonstrated how to calculate Raman intensity of interlayer modes in vdWHs by interlayer polarizability model. 相似文献
5.
亚硝酸钠刻蚀液对多晶硅表面陷阱坑形貌的影响 总被引：1，自引：0，他引：1
酸刻蚀多晶硅表面技术是当前太阳能研究的热点之一。利用亚硝酸钠比硝酸钠氧化能力弱的特点,在普通酸刻蚀液中用亚硝酸钠取代硝酸配制多晶硅表面刻蚀液,然后在相同的工艺条件下刻蚀多晶硅表面。实验样品的SEM显示:含有NaNO2酸刻蚀液使多晶硅表面能布满蚯蚓状的腐蚀坑,腐蚀坑的深度比传统的酸刻蚀的陷阱坑深,而且密度分布比较均匀,样品平均反射率下降到23.5%,与传统配方酸刻蚀液刻蚀的多晶硅表面相比,平均反射率下降了8%左右。 相似文献
6.
Two-dimensional(2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing. 相似文献
7.
Smrati Gupta Mukesh Agrawal Marc Conrad Naima Aurelia Hutter Phillip Olk Frank Simon Lukas M. Eng Manfred Stamm Rainer Jordan 《Advanced functional materials》2010,20(11):1756-1761
A simple, fast, and versatile approach to the fabrication of outstanding surface enhanced Raman spectroscopy (SERS) substrates by exploiting the optical properties of the Ag nanoparticles and functional as well as organizational characteristics of the polymer brushes is reported. First, poly(2‐(dimethylamino)ethyl methacrylate) brushes are synthesized directly on glassy carbon by self‐initiated photografting and photopolymerization and thoroughly characterized in terms of their thickness, wettability, morphology, and chemical structure by means of ellipsometry, contact angle, AFM, and XPS, respectively. Second, Ag nanoparticles are homogeneously immobilized into the brush layer, resulting in a sensor platform for the detection of organic molecules by SERS. The surface enhancement factor (SEF) as determined by the detection of Rhodamine 6G is calculated as 6 × 106. 相似文献
8.
我们在室温下测量采用反射差分光谱测量了r面蓝宝石衬底上生长的a面氧化锌的平面内光学各向异性。由于a面氧化锌为C2v对称性,我们观察到在平行c轴的方向和垂直于c轴的方向存在巨大的平面内光学各向异性。在带隙处观察到了非常尖锐的跃迁振荡信号,这个信号来源于偏振相关的能带移动。激子跃迁产生了尖锐的线形。谱线的拟合和微分光谱给出了偏振相关的带隙能量。垂直于c轴和平行于c轴方向上的各向异性应变产生了巨大的平面内光学各向异性。介电函数模型给出了拟合的结果,估计了带隙附近的偏振度。 相似文献
9.
We have measured the in-plane optical anisotropy （IPOA） of （1120） ZnO （a-plane） on （10]-2） sapphire （r-plane） by reflectance difference spectroscopy （RDS） at room temperature. Giant IPOA has been observed be- tween the light polarized direction parallel and perpendicular to the c axis of ZnO, since the symmetry of a-plane is C2v. A sharp resonance has been observed near the fundamental band gap, which is induced by the polarization- depend band gap shift. The sharp line shape is attributed to the exciton transition. The spectra fitting and differential spectra indicate the polarization-depend band energies. The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane. 相似文献
10.
本文探索在低压（2mbar）真空环境下在6H-Si(000-1)衬底上外延生长石墨烯的形成机理。结果显示,生长温度极大的影响着SiC热分解过程中石墨烯的形成和质量,更高的生长温度可以降低衬底对石墨烯的影响,也有利于高质量石墨烯的生成。通过对Raman光谱数据进行分析,表明在1600℃时生成的石墨烯具有turbostratic 石墨结构。扫描电子显微镜显示石墨烯的尺寸约在10微米左右,这为制备大尺寸的外延石墨烯提供新的方法。 相似文献
11.
双钨酸盐晶体Nd∶NaGd(WO4)2(简称Nd∶NGW)和Nd∶NaLa(WO4)2(简称Nd∶NLW)是一类新出现的比较有前途的激光晶体, 它们属于四方晶系白钨矿结构。根据对称性分类,用商群理论分析了两种晶体的拉曼光谱。此类钨酸盐晶体一个原胞中理论上有36个振动模。使用半导体激光的785 nm波长和Ar +激光的514.5 nm激发, 测得激光光入射方向分别垂直和平行于光轴方向的偏振拉曼光谱(100～2000 cm-1), 并对测得的拉曼峰进行了指认。由于Nd3+离子进入晶体取代离子的半径不同,晶格对Nd3+跃迁影响大小不同, Nd∶NGW和Nd∶NLW的拉曼光谱也表现出了差异性。通过不同激发波长的拉曼谱的比较, 在中间波段发现并确认了几个共振拉曼峰。 相似文献
12.
二维半导体材料,如过渡金属硫族化合物,以其在光电器件方面展现出的独特性能与巨大潜力,成为后摩尔时代有极大发展前景的新半导体材料.二维材料具有独特的光电性质,如直接带隙的电子结构,谷自旋电子学特性,强激子效应等,而利用以上性质,此类材料可用于光探测器、场效应晶体管、高效微纳传感器、光电子电路等微纳光电器件中.因此,以过渡金属硫族化合物为代表的二维半导体材料无论在基础科学与未来应用方面,都是重要的备选材料. 相似文献
13.
14.
Wang Dangchao Zhang Yuming Zhang Yimen Lei Tianmin Guo Hui Wang Yuehu Tang Xiaoyan Wang Hang 《半导体学报》2011,32(11)
This article investigates the formation mechanism of epitaxial graphene on 6H-SiC (000(1)) substrates under low pressure of 2 mbar environment.It is shown that the growth temperature dramatically affects the formation and quality of epitaxial graphene.The higher growing temperature is of great benefit to the quality of epitaxial graphene and also can reduce the impact of the substrate for graphene.By analyzing Raman data,we conclude that epitaxial graphene grown at 1600 ℃ has a turbostratic graphite structure.The test from scanning electron microscopy (SEM) indicates that the epitaxial graphene has a size of 10μm.This research will provide a feasible route for fabricating larger size ofepitaxial graphene on SiC substrate. 相似文献
15.
单壁碳纳米管表面增强拉曼散射的新方法 总被引：1，自引：1，他引：0
依据碳纳米管独特的力学性能,在银表面直接研磨单壁碳纳米管(SWCNTs),在形成纳米级粗糙银表面的同时,SWCNTs管也吸附在银表面上,在银表面粗糙程度和SWCNTs厚度适中的区域得到了高质量的表面增强拉曼散射(SERS)谱。理论分析和实验结果表明,该方法是正确可行的。 相似文献
16.
Seiya Suzuki Takuya Iwasaki K. Kanishka H. De Silva Shigeru Suehara Kenji Watanabe Takashi Taniguchi Satoshi Moriyama Masamichi Yoshimura Takashi Aizawa Tomonobu Nakayama 《Advanced functional materials》2021,31(5):2007038
Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al2O3 cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices. 相似文献
17.
Xun Zhao Zhipu Li Shiru Wu Min Lu Xiaoji Xie Da Zhan Jiaxu Yan 《Advanced Electronic Materials》2024,10(2):2300610
In recent years, anisotropic 2D materials (black phosphorus, ReS2, WTe2, etc.) have garnered significant attention due to their orientation-dependent physical and chemical properties, along with their potential applications in micro-nano device development, such as crystal-based diodes, polarized light photodetectors, and directional heat transfer. As a practical, quick, and nondestructive characterization tool, Raman spectroscopy, with its unique and unmatched advantages in studying anisotropic materials, plays a crucial role. It enables lattice orientation identification, investigation of structural phase transitions, and examination of anisotropic lattice vibrations, among other aspects. Here, a comprehensive review of recent developments in Raman spectroscopy research on anisotropic materials is provided. To begin, this study introduces the classification of anisotropic materials before delving into the polarized Raman spectroscopy principle. Various research directions of Raman spectroscopy in anisotropic materials are explored, including lattice orientation identification, temperature dependence, interlayer coupling, electron–phonon interaction, thickness dependence, and high-pressure phase transition. Finally, potential future directions in the field of Raman spectroscopy for anisotropic materials are discussed, and the potential challenges that may arise are addressed. 相似文献
18.
Arun Prakash Aranga Raju Amanda Lewis Brian Derby Robert J. Young Ian A. Kinloch Recep Zan Kostya S. Novoselov 《Advanced functional materials》2014,24(19):2865-2874
Functional graphene optical sensors are now viable due to the recent developments in hand‐held Raman spectroscopy and the chemical vapor deposition (CVD) of graphene films. Herein, the strain in graphene/poly (methyl methacrylate) sensor coatings is followed using Raman band shifts. The performance of an “ideal” mechanically‐exfoliated single crystal graphene flake is compared to a scalable CVD graphene film. The dry‐transferred mechanically exfoliated sample has no residual stresses, whereas the CVD sample is in compression following the solvent evaporation during its transfer. The behavior of the sensors under cyclic deformation shows an initial breakdown of the graphene‐polymer interface with the interface then stabilizing after several cycles. The Raman 2D band shift rates per unit strain of the exfoliated graphene are ≈35% higher than CVD graphene making the former more strain sensitive. However, for practical wide‐area applications, CVD graphene coatings are still viable candidates as a Raman system can be used to read the strain in any 5 μm diameter spot in the coating to an absolute accuracy of ≈0.01% strain and resolution of ≈27 microstrains (μs), which compares favorably to commercial photoelastic systems. 相似文献
19.
Raman analysis of epitaxial graphene on 6H-SiC(000) substrates under low pressure environment 
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下载免费PDF全文 This article investigates the formation mechanism of epitaxial graphene on 6H-SiC(0001) substrates under low pressure of 2 mbar environment.It is shown that the growth temperature dramatically affects the formation and quality of epitaxial graphene.The higher growing temperature is of great benefit to the quality of epitaxial graphene and also can reduce the impact of the substrate for graphene.By analyzing Raman data,we conclude that epitaxial graphene grown at 1600℃has a turbostratic graphite structure.The test from scanning electron microscopy (SEM) indicates that the epitaxial graphene has a size of 10μm.This research will provide a feasible route for fabricating larger size of epitaxial graphene on SiC substrate. 相似文献
20.
Khang June Lee Daewon Kim Byung Chul Jang Da‐Jin Kim Hamin Park Dae Yool Jung Woonggi Hong Tae Keun Kim Yang‐Kyu Choi Sung‐Yool Choi 《Advanced functional materials》2016,26(28):5093-5101
The plasmonic coupling, the enhanced electromagnetic field occurring through a uniform and small separation between metallic particles, is required for better application to localized surface plasmon resonance. Graphene has been studied as a good spacer candidate because of its precise controllability at subnanoscale. Here, the enhancement of plasmonic coupling among metallic nanoparticles (NPs) uniformly spread out on both sides of a graphene spacer is experimentally and simulatively investigated. Additionally, the post‐evaporated flat structure is rippled along one direction to reduce the separation between nanoparticles. As the amount of rippling increases, the enhancement factor (EF) of the plasmonic coupling increases almost linearly or quadratically depending on the size of nanoparticles. Such a highly rippled nanostructure is believed to not only increase the plasmonic coupling in either side of the spacer but lead to a higher density of “hot spots” through the spacer gap also. The observed EFs of a structure with the MLG spacer are consistent with the simulation results obtained from the classical electrodynamics. On the other hand, the SLG case appears to be inconsistent with such a classical approach, indicating that the plasmon tunneling through the thin barrier is prevalent in the case of the SLG spacer. 相似文献