Si基Cu/NiFe薄膜的生长及其粘附特性研究

微机械(MEMS)工艺和集成电路(IC)工艺中,在硅(Si)片上电铸高深宽比坡莫(NiFe)合金材料常出现脱落现象.提出了一种电铸NiFe合金材料的新方法,这种方法制作的合金薄膜厚度达200 μm时不脱落.此方法即对等离子刻蚀后的硅片溅射种子层铜(Cu),然后对种子层进行电镀,当其厚度达到约15 μm时,再进行NiFe合金的电铸.本文用扫描电镜、x射线衍射仪和剥离实验研究了薄膜粘附特性.研究结果表明当对种子层电镀后,随着Cu种子层厚度的增加,Cu/NiFe薄膜与基体的粘附强度增加,而薄膜的残余应力降低;同时Cu膜表面粗糙度增加,也增加了NiFe膜与Cu膜的粘附强度.     

Study on the giant magnetoimpedance effect in micro-patterned Co-based amorphous ribbons with single strip structure and tortuous shape

Field-annealed Co-based commercial amorphous ribbons (Metglas^® 2714A) with single strip structure and tortuous shape are fabricated by MEMS technology. The influence of the size, magnetic field and frequency on the giant magnetoimpedance (GMI) ratio of the ribbons with single strip structure and tortuous shape is investigated. The results show that the GMI ratio of micro-patterned Co-based amorphous ribbons with single strip structure increases with increasing in length and decreases with the increasing in width. The ribbons (length = 10 mm, width = 250 μm) with single strip can get higher GMI ratio at lower frequency (<40 MHz). The GMI ratio of micro-patterned tortuous-shaped Co-based amorphous ribbon with six turns is biggest with 82 %, obtained at a frequency of 40 MHz and a field of 20 Oe, and the GMI ratio increases with the increasing in turn number from two turns to six turns. All mechanisms (line width and tortuous shape) that influence the inductance and resistance will result in changes in the impedance and the GMI effect. The anisotropy field H_K (15–20 Oe) of tortuous shape ribbon that the peak GMI ratio is larger than that (5–10 Oe) of the ribbon with single strip structure. The effect of the frequency on the GMI ratio of the ribbons with tortuous shape is more complex. This can be explanation by complex inductance of tortuous shape ribbons.     

Large-eddy simulations of film cooling flows

Large-eddy simulations (LES) of a jet in a cross-flow (JICF) problem are carried out to investigate the turbulent flow structure and the vortex dynamics in gas turbine blade film cooling. A turbulent flat plate boundary layer at a Reynolds number of Re_∞ = 400,000 interacts with a jet issued from a pipe. To study the effect of the jet inclination angle α on the flow field, two angles are chosen, the perpendicular injection at 90° and the streamwise inclined injection at 30°. For the normal injection case a small blowing ratio of the jet velocity to the cross-stream velocity R = 0.1 is examined. For the streamwise inclined injection case two blowing ratios R = 0.1 and R = 0.48 are investigated to check the impact of the jet velocity on the cooling performance. The time-dependent turbulent inflow information for the cross-flow is provided by a simultaneously performed LES of a spatially developing turbulent boundary layer. Whereas in the perpendicular injection case a rather large separation region is found at the leading edge of the jet hole, in the streamwise inclined injection cases no separation is observed. Compared with the normal injection case at the same blowing ratio, the streamwise inclination weakens the jet-cross-flow interaction significantly. Thus, the first appearance of the counter-rotating vortex pair (CVP) is shifted downstream and its strength is reduced. The increase of the blowing ratio leads to a stronger penetration of the jet into the cross-flow, resulting in a more upstream located and more pronounced CVP. Downstream of the jet exit the streamwise vortices are so large that besides the jet fluid also the cross-stream is partially entrained into this zone, which yields the worst cooling performance.     

Two-axis micro fluxgate sensor on single chip

We present a two-axis micro fluxgate sensor on single chip for electronic compassing function. To measure X- and Y-axis magnetic fields, functional two fluxgate sensors were perpendicularly aligned and connected each other. The fluxgate sensor was composed of square-ring shaped magnetic core and solenoid excitation and pick-up coils. The solenoid coils and magnetic core were separated by benzocyclobutane which had high insulation and good planarization characters. Copper coil patterns of 10 μm width and 6 μm thickness were electroplated on Ti (300 Å)/Cu (1,500 Å) seed layers. 3 μm thick Ni_0.8Fe_0.2 (permalloy) film for the magnetic core was also electroplated under 2,000 gauss. Excellent linear response over the range of ?100 μT to +100 μT was obtained with the sensitivity of ～280 V/T. Actual chip size was 3.1×3.1 mm². The sine and cosine signals of two-axis fluxgate sensor had a good function of azimuth compass.     

基于V/I转换电路与锁相放大器的磁阻抗测量系统

为了实现GMI传感器的低成本及便携式应用,一种新型的GMI传感器检测系统被提出并研究,新型GMI传感器检测系统由信号源、V/I转换电路及锁相放大器构成。在1 MHz到10 MHz的激励信号频率范围内,利用新型检测系统对NiFe/Cu/NiFe三明治结构的GMI传感器进行了测量,并且与惠普公司4194A型阻抗分析仪在相同条件下的测量结果进行了比对分析,在频率为6 MHz时比较结果显示该系统的误差范围小于1.5%。     

Study on TSV isolation liners for a Via Last approach with the use in 3D-WLP for MEMS

This paper discusses approaches for the isolation of deep high aspect ratio through silicon vias (TSV) with respect to a Via Last approach for micro-electro-mechanical systems (MEMS). Selected TSV samples have depths in the range of 170…270 µm and a diameter of 50 µm. The investigations comprise the deposition of different layer stacks by means of subatmospheric and plasma enhanced chemical vapour deposition (PECVD) of tetraethyl orthosilicate; Si(OC₂H₅)₄ (TEOS). Moreover, an etch-back approach and the selective deposition on SiN were also included in the investigations. With respect to the Via Last approach, the contact opening at the TSV bottom by means of a specific spacer-etching method have been addressed within this paper. Step coverage values of up to 74 % were achieved for the best of those approaches. As an alternative to the SiO₂-isolation liners a polymer coating based on the CVD of Parylene F was investigated, which yields even higher step coverage in the range of 80 % at the lower TSV sidewall for a surface film thickness of about 1000 nm. Leakage current measurements were performed and values below 0.1 nA/cm² at 10 kV/cm were determined for the Parylene F films which represents a promising result for the aspired application to Via Last MEMS-TSV.     

Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

Monolithic fabrication of lead zirconate titanate [Pb(Zr,Ti)O₃ or PZT] based thin film resonant devices such as microcantilevers, Lamb wave and bulk acoustic wave resonators are demonstrated. High-performance PZT thin films with a thickness of 2.6 μm are prepared on a silicon on insulator wafer by a sputtering deposition process. A highly selective reactive ion etching process is employed for micro-patterning of PZT, platinum electrodes, and SiO₂ insulation layer. Self-actuation of the PZT microcantilevers is demonstrated and the frequency response is characterized using a laser Doppler vibrometer. The frequency response of the Lamb wave resonator is evaluated by measuring its transmission characteristic using a network analyzer. For a Lamb wave resonator with a length of 240 μm and an interdigital period of 80 μm, the 1st order and 2nd resonance frequencies are 15.3 and 41.8 MHz, respectively.     

Design and implementation of novel thin film position-sensitive detectors (TFPSDs) based on photoconductive effect

In this paper, novel, very simple and low-cost thin film position sensitive detectors (TFPSDs) which employ indium tin oxide (ITO)-cadmium sulfide (CdS)-Au structures are presented. Different from the existed PSDs those based on lateral photovoltage effect, the proposed sensor is operated in principle of photoconductive effect. CdS film is chosen as the photosensitive layer since its excellent photoconductive property, low cost and suitable for depositing on different type substrates with large areas. In the present study, CdS films are deposited on silicon substrates by using rf magnetron sputtering at room temperature. After that, the prepared CdS films were annealed at different temperatures for 50 min in N₂ ambient and a rigorous analysis was presented on the surface topography, and photoconductive properties by scanning electron microscopy and semiconductor characteristics analyzer. The test results shows that the film annealed at 400 °C has the best photoconductive property. Moreover, the finite-element method was used to study the relationship between the Aluminium (Al) electrode shape and the linearity of PSD. Three different type PSDs (quadrilateral, rectangular-shaped and pillow-shaped) were designed and simulated. The simulation results indicate that the quadrilateral electrode is suitable for large-area PSDs, whereas the rectangular-shaped and pillow-shaped electrodes can be used to realize small-area PSDs. The measurement results shows that the non-linearities of three type PSDs with dimensions of 10 × 10 mm are respectively 2.106, 3.594, and 3.55 %, which verify the conclusion deduced from the simulation results.     

Effects of interface curvature on Poiseuille flow through microchannels and microtubes containing superhydrophobic surfaces with transverse grooves and ribs

This paper presents numerical results pertaining to the effects of interface curvature on the effective slip behavior of Poiseuille flow through microchannels and microtubes containing superhydrophobic surfaces with transverse ribs and grooves. The effects of interface curvature are systematically investigated for different normalized channel heights or tube diameters, shear-free fractions, and flow Reynolds numbers. The numerical results show that in the low Reynolds number Stokes flow regime, when the channel height or tube diameter (normalized using the groove–rib spacing) is sufficiently large, the critical interface protrusion angle at which the effective slip length becomes zero is θ _c ≈ 62°–65°, which is independent of the shear-free fraction, flow geometry (channel and tube), and flow driving mechanism. As the normalized channel height or tube diameter is reduced, for a given shear-free fraction, the critical interface protrusion angle θ _c decreases. As inertial effects become increasingly dominant corresponding to an increase in Reynolds number, the effective slip length decreases, with the tube flow exhibiting a more pronounced reduction than the channel flow. In addition, for the same corresponding values of shear-free fraction, normalized groove–rib spacing, and interface protrusion angle, longitudinal grooves are found to be consistently superior to transverse grooves in terms of effective slip performance.     

Thin film polypyrrole/SWCNTs nanocomposites-based NH3 sensor operated at room temperature

A PPY/SWCNTs nanocomposite-based sensor with relatively high sensitivity and fast response–recovery was developed for detection of NH₃ gas at room temperature. The gas-sensitive composite thin film was prepared using chemical polymerization and spin-coating techniques, and characterized by Fourier transformed infrared spectra and field-emission scanning electron microscopy. The results reveal that the conjugated structure of the PPY layer was formed and the functionalized SWCNTs were well-embedded. The effects of film thickness, annealing temperature, and SWCNTs content on gas-sensing properties of the composite thin film were investigated to optimize the gas-sensing performance. The as-prepared thin film PPY/SWCNTs composite sensor with optimized process parameters had a response of 26–276% upon exposure to NH₃ gas concentration from 10 to 800 ppm, and their response and recovery times were around 22 and 38 s, respectively.     

Thin film SnO2-based gas sensors: Film thickness influence

The influence of the thickness of SnO₂ films deposited by a spray pyrolysis method on the operating characteristics of gas sensors is analyzed in this paper. It outlines how the thickness of metal oxides is an important parameter for gas sensors in determining the main operating parameters, such as the magnitude and rate of the sensor response and the optimal operating temperature. It is also shown that the optimal film thickness of a gas sensing layer depends on the required sensor parameters.     

Liquid film thickness measurement underneath a gas slug with miniaturized sensor matrix in a microchannel

Measurement of liquid film thickness is essential for understanding the dynamics of two-phase flow in microchannels. In this work, a miniaturized sensor matrix with impedance measurement and MEMS technology to measure the thin liquid film underneath a bubble in the air–water flow in a horizontal microchannel has been developed. This miniaturized sensor matrix consists of 5 × 5 sensors where each sensor is comprised of a transmitter and a receiver electrode concentrically. The dimension and performance of the sensor electrodes were optimized with simulation results. The maximum diameter of the sensor ring is 310 µm, allowing a measurable range of liquid film thickness up to 83 µm. These sensors were distributed on the surface of a wafer with photolithography technology, covering a total length of 8 mm and a width of 2 mm. A spatial resolution of 0.5 × 2.0 mm² and a temporal resolution of 5 kHz were achieved for this sensor matrix with a measurement accuracy of 0.5 µm. A series of microchannels with different heights were used in the calibration in order to achieve the signal-to-thickness characteristics of each sensor. This delicate sensor matrix can provide detailed information on the variation of film thickness underneath gas–water slug directly, accurately and dynamically.     

A study of the effect of the fabrication process on diffusion in a layered thin film

 A diffusion layer that is likely to be formed at the interfaces of the multi-layered thin film would affect its overall mechanical properties; the thinner the thin film, the more significant would be the effect. We measure the distribution of atoms and estimate the thickness of the diffusion layer at the vicinity of the interfaces among thin films of Al and SiO₂ and silicon wafer with the aid of Auger electron spectroscopy (AES). The effect of heat treatment after fabrication of the thin films on the diffusion is also investigated. Received: 28 December 1998/Accepted: 4 January 1999     

Ferroelectric properties of direct-patterned half-micron thick PZT film

Ferroelectric properties of direct-patterned PZT(PbZr_0.52Ti_0.48O₃) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.     

Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

A comprehensive study on the complete process for the fabrication of AlN-based MEMS sensors and actuators is presented. Varying the bias voltage during the reactive rf sputtering enables to adjust the stress level in AlN films in the range of about 2?GPa. For the first time the influence of the rf bias power on the whole set of piezoelectric parameters was investigated. It could be shown that the dielectric permittivity, dielectric loss, rocking curve width, effective longitudinal piezoelectric coefficient d _33,f and effective transverse piezoelectric coefficient e _31,f remained unchanged. Further it was observed that piezoelectric AlN films could be deposited at low process temperatures of only 200?°C. Moreover an increase in the e _31,f coefficient with thicker films could be stated. Finally cone formation during wet etching was observed and revealed a formation of {01–12} planes which exhibit a slow etching rate. The c-textured growth of AlN starts directly at the Pt interface.     

Application of a three-dimensional mixed finite element model to the flexure of sandwich plate

The bending analysis of sandwich plates consisting of very stiff face sheets and a comparatively flexible core material offers challenge due to large variation in the magnitude of stress and strain components in the face and in the core regions of the plate. Similarly, the displacement fields do vary in zigzag manner at the layer interface of stiff face sheet and the soft core, thereby making the transverse strains highly discontinuous at such layer interfaces. All these behavioural aspects indicate that only an individual layerwise model can appropriately analyze sandwich plates. A layerwise (three-dimensional), mixed, 18-node finite element (FE) model developed by Ramtekkar et al. [Mech. Adv. Mater. Struct. 9 (2002) 133] has been employed for the accurate evaluation of transverse stresses in sandwich laminates. The FE model consists of six degrees-of-freedom (three displacement components and three transverse stress components τ_xz, τ_yz, σ_z, where z is the thickness direction) per node which ensures the through thickness continuity of transverse stress and displacement fields. Results obtained by using the FE model have shown excellent agreement with the available elasticity solutions for sandwich plates. Additional results on the variation of transverse strains have also been presented to highlight the magnitude of discontinuity in these quantities due to difference in properties of the face and the core materials of sandwich plates.     

Fabrication of AFM probe with CuO nanowire formed by stress-induced method

A novel method has been proposed to fabricate an atomic force microscope (AFM) probe using CuO nanowire and a stress-induced method that can form the nanowire easily. By heating a commercial AFM probe with a film coating of Ta and Cu, a Cu hillock with CuO nanowires on its surface could be formed at the end of the probe. The thickness of the coating films, the heating temperature, and the heating time were investigated to obtain CuO nanowires with a high aspect ratio for use as an AFM probe tip. It was found that a suitable probe tip can be fabricated using the a Cu film thickness of 700 nm, a heating temperature of 380 °C and a heating time of 6 h. Probe tips (~5 μm high) and nanowires of ~25 nm diameter were obtained successfully. In the range evaluated, the measurement resolution of the CuO nanowire probe was slightly worse than that of a commercial AFM probe. However, both probes had almost the same dimensional measurement precision.     

Enhanced room temperature response of SnO2 thin film sensor loaded with Pt catalyst clusters under UV radiation for LPG

The room temperature response characteristics of SnO₂ thin film sensor loaded with platinum catalyst clusters are investigated for LPG under the exposure of ultraviolet radiation. The SnO₂-Pt cluster sensor structures have been prepared using rf sputtering. Combined effect of UV radiation exposure (λ = 365 nm) and presence of Pt catalyst clusters (10 nm thick) on SnO₂ thin film sensor surface is seen to lead to an enhanced response (4.4 × 10³) for the detection of LPG (200 ppm) at room temperature whereas in the absence of UV illumination a comparable response (∼5 × 10³) could be obtained but only at an elevated temperature of 220 °C. The present study therefore investigates the effect of UV illumination on LPG sensing characteristics of SnO₂ sensors loaded with Pt clusters of varying thickness values. Results indicate the possibility of utilizing the sensor structure with novel dispersal of Pt catalyst clusters on SnO₂ film surface for efficient detection of LPG at room temperature under the illumination of UV radiations.     

Filtration of aerosol particles by cylindrical fibers within a parallel and staggered array

The World Health Organization (WHO) in 2013 reported that more than seven million unexpected losses every year are credited to air contamination. Because of incredible adaptability and expense viability of fibrous filters, they are broadly used for removing particulates from gasses. The influence of appropriate parameters, e.g., the fiber arrangement, solid volume fraction (SVF or α), fluid flow face velocity (mean inlet velocity), and filter thickness (I _x ), on pressure drop and deposition efficiency are researched. Furthermore, to study the effects of variation of the laminar flow regime and fiber’s cross-sectional shape on the deposition of particles, only a single square fiber has been placed in a channel. By means of finite volume method (FVM), the 2-D motion of 100–1000 nm particles was investigated numerically. The Lagrangian method has been employed and the Saffman’s lift, Drag, and Brownian forces have been considered to affect this motion. Contribution of increasing the Reynolds number to filtration performance increased with smaller fine aerosols to a level of 59.72 %. However, for over 500 nm, the Re = 100 has more efficient results up to 26.97 %. Remarkably, the single square fiber in Re = 200 regime performs similarly to the optimum choice of multi-fibrous filters. It was portrayed the parallel circular multi-fibrous filter with a ratio of horizontal-to-vertical distances between fibers, l/h = 1.143; α = 0.687, I _x  = 116.572, and h/d _f  = 1.0 is the most efficient filter’s structure. The increase in the ratio of vertical distances between fibers-to-fiber’s diameter (h/d _f ) and decrease in SVF or α, results in a drastically decrement of the filtration performance of both parallel and staggered structures. The obtained results have been validated with previous research findings.     

A patterning technique of lead zirconate titanate thin film by ultraviolet-light

The patterning technique of Pb(Zr, Ti)O₃ (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 °C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm^?2, which was compared to 17.24 μc cm^?2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm^?1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.