Stretchable Transistor-Structured Artificial Synapses for Neuromorphic Electronics

Stretchable synaptic transistors, a core technology in neuromorphic electronics, have functions and structures similar to biological synapses and can concurrently transmit signals and learn. Stretchable synaptic transistors are usually soft and stretchy and can accommodate various mechanical deformations, which presents significant prospects in soft machines, electronic skin, human–brain interfaces, and wearable electronics. Considerable efforts have been devoted to developing stretchable synaptic transistors to implement electronic device neuromorphic functions, and remarkable advances have been achieved. Here, this review introduces the basic concept of artificial synaptic transistors and summarizes the recent progress in device structures, functional-layer materials, and fabrication processes. Classical stretchable synaptic transistors, including electric double-layer synaptic transistors, electrochemical synaptic transistors, and optoelectronic synaptic transistors, as well as the applications of stretchable synaptic transistors in light-sensory systems, tactile-sensory systems, and multisensory artificial-nerves systems, are discussed. Finally, the current challenges and potential directions of stretchable synaptic transistors are analyzed. This review presents a detailed introduction to the recent progress in stretchable synaptic transistors from basic concept to applications, providing a reference for the development of stretchable synaptic transistors in the future.     

Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing

Memristors have recently attracted significant interest due to their applicability as promising building blocks of neuromorphic computing and electronic systems. The dynamic reconfiguration of memristors, which is based on the history of applied electrical stimuli, can mimic both essential analog synaptic and neuronal functionalities. These can be utilized as the node and terminal devices in an artificial neural network. Consequently, the ability to understand, control, and utilize fundamental switching principles and various types of device architectures of the memristor is necessary for achieving memristor-based neuromorphic hardware systems. Herein, a wide range of memristors and memristive-related devices for artificial synapses and neurons is highlighted. The device structures, switching principles, and the applications of essential synaptic and neuronal functionalities are sequentially presented. Moreover, recent advances in memristive artificial neural networks and their hardware implementations are introduced along with an overview of the various learning algorithms. Finally, the main challenges of the memristive synapses and neurons toward high-performance and energy-efficient neuromorphic computing are briefly discussed. This progress report aims to be an insightful guide for the research on memristors and neuromorphic-based computing.     

Flexible Neuromorphic Electronics for Computing,Soft Robotics,and Neuroprosthetics

Flexible neuromorphic electronics that emulate biological neuronal systems constitute a promising candidate for next-generation wearable computing, soft robotics, and neuroprosthetics. For realization, with the achievement of simple synaptic behaviors in a single device, the construction of artificial synapses with various functions of sensing and responding and integrated systems to mimic complicated computing, sensing, and responding in biological systems is a prerequisite. Artificial synapses that have learning ability can perceive and react to events in the real world; these abilities expand the neuromorphic applications toward health monitoring and cybernetic devices in the future Internet of Things. To demonstrate the flexible neuromorphic systems successfully, it is essential to develop artificial synapses and nerves replicating the functionalities of the biological counterparts and satisfying the requirements for constructing the elements and the integrated systems such as flexibility, low power consumption, high-density integration, and biocompatibility. Here, the progress of flexible neuromorphic electronics is addressed, from basic backgrounds including synaptic characteristics, device structures, and mechanisms of artificial synapses and nerves, to applications for computing, soft robotics, and neuroprosthetics. Finally, future research directions toward wearable artificial neuromorphic systems are suggested for this emerging area.     

Nonvolatile Memories Based on Graphene and Related 2D Materials

The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon‐based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low‐cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random‐access, flash, magnetic and phase‐change memories. The physical and chemical mechanisms underlying the switching of GRM‐based memory devices studied in the last decade are discussed. Although at this stage most of the proof‐of‐concept devices investigated do not compete with state‐of‐the‐art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.     

Emerging 2D Materials Produced via Electrochemistry

2D materials are important building blocks for the upcoming generation of nanostructured electronics and multifunctional devices due to their distinct chemical and physical characteristics. To this end, large-scale production of 2D materials with high purity or with specific functionalities represents a key to advancing fundamental studies as well as industrial applications. Among the state-of-the-art synthetic protocols, electrochemical exfoliation of layered materials is a very promising approach that offers high yield, great efficiency, low cost, simple instrumentation, and excellent up-scalability. Remarkably, playing with electrochemical parameters not only enables tunable material properties but also increases the material diversities from graphene to a wide spectrum of 2D semiconductors. Here, a succinct and critical survey of the recent progress in this research direction is presented, comprising the strategic design, exfoliation principles, underlying mechanisms, processing techniques, and potential applications of 2D materials. At the end of the discussion, the emerging trends, challenges, and opportunities in real practice are also highlighted.     

Stimuli‐Enabled Artificial Synapses for Neuromorphic Perception: Progress and Perspectives

Brain‐inspired neuromorphic computing is intended to provide effective emulation of the functionality of the human brain via the integration of electronic components. Recent studies of synaptic plasticity, which represents one of the most significant neurochemical bases of learning and memory, have enhanced the general comprehension of how the brain functions and have thereby eased the development of artificial neuromorphic devices. An understanding of the synaptic plasticity induced by various types of stimuli is essential for neuromorphic system construction. The realization of multiple stimuli‐enabled synapses will be important for future neuromorphic computing applications. In this Review, state‐of‐the‐art synaptic devices with particular emphasis on their synaptic behaviors under excitation by a variety of external stimuli are summarized, including electric fields, light, magnetic fields, pressure, and temperature. The switching mechanisms of these synaptic devices are discussed in detail, including ion migration, electron/hole transfer, phase transition, redox‐based resistive switching, and other mechanisms. This Review aims to provide a comprehensive understanding of the operating mechanisms of artificial synapses and thus provides the principles required for design of multifunctional neuromorphic systems with parallel processing capabilities.     

Wearable Electronics Based on 2D Materials for Human Physiological Information Detection

Recently, advancement in materials production, device fabrication, and flexible circuit has led to the huge prosperity of wearable electronics for human healthcare monitoring and medical diagnosis. Particularly, with the emergence of 2D materials many merits including light weight, high stretchability, excellent biocompatibility, and high performance are used for those potential applications. Thus, it is urgent to review the wearable electronics based on 2D materials for the detection of various human signals. In this work, the typical graphene‐based materials, transition‐metal dichalcogenides, and transition metal carbides or carbonitrides used for the wearable electronics are discussed. To well understand the human physiological information, it is divided into two dominated categories, namely, the human physical and the human chemical signals. The monitoring of body temperature, electrograms, subtle signals, and limb motions is described for the physical signals while the detection of body fluid including sweat, breathing gas, and saliva is reviewed for the chemical signals. Recent progress and development toward those specific utilizations are highlighted in the Review with the representative examples. The future outlook of wearable healthcare techniques is briefly discussed for their commercialization.     

A New Memristor with 2D Ti3C2Tx MXene Flakes as an Artificial Bio‐Synapse

Two‐dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti₃C₂T_x) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti₃C₂T_x flakes. After electroforming, Al/Ti₃C₂T_x/Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short‐term plasticity to long‐term plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high‐efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti₃C₂T_x flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications.     

Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus

The translation of biological synapses onto a hardware platform is an important step toward the realization of brain‐inspired electronics. However, to mimic biological synapses, devices till?date continue to rely on the need for simultaneously altering the polarity of an applied electric field or the output of these devices is photonic instead of an electrical synapse. As the next big step toward practical realization of optogenetics inspired circuits that exhibit fidelity and flexibility of biological synapses, optically?stimulated synaptic devices without a need to apply polarity?altering electric field are needed. Utilizing a unique photoresponse in black phosphorus (BP), here reported is an all?optical pathway to emulate excitatory and inhibitory action potentials by exploiting oxidation?related defects. These optical synapses are capable of imitating key neural functions such as psychological learning and forgetting, spatiotemporally correlated dynamic logic and Hebbian spike?time dependent plasticity. These functionalities are also demonstrated on a flexible platform suitable for wearable electronics. Such low‐power consuming devices are highly attractive for deployment in neuromorphic architectures. The manifestation of cognition and spatiotemporal processing solely through optical stimuli provides an incredibly simple and powerful platform to emulate sophisticated neural functionalities such as associative sensory data processing and decision making.     

Thermomechanical Nanocutting of 2D Materials

Atomically thin materials, such as graphene and transition metal dichalcogenides, are promising candidates for future applications in micro/nanodevices and systems. For most applications, functional nanostructures have to be patterned by lithography. Developing lithography techniques for 2D materials is essential for system integration and wafer-scale manufacturing. Here, a thermomechanical indentation technique is demonstrated, which allows for the direct cutting of 2D materials using a heated scanning nanotip. Arbitrarily shaped cuts with a resolution of 20 nm are obtained in monolayer 2D materials, i.e., molybdenum ditelluride (MoTe₂), molybdenum disulfide (MoS₂), and molybdenum diselenide (MoSe₂), by thermomechanically cleaving the chemical bonds and by rapid sublimation of the polymer layer underneath the 2D material layer. Several micro/nanoribbon structures are fabricated and electrically characterized to demonstrate the process for device fabrication. The proposed direct nanocutting technique allows for precisely tailoring nanostructures of 2D materials with foreseen applications in the fabrication of electronic and photonic nanodevices.     

Potential 2D Materials with Phase Transitions: Structure,Synthesis, and Device Applications

Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few‐layers and then become a large and important subfamily of two‐dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long‐range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase‐transition materials have vast potential for use in new‐concept and functional devices. Here, potential 2D phase‐transition materials with CDWs and magnetic and dipole ordering, including transition metal dichalcogenides, transition metal halides, metal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced. The structures and experimental phase‐transition properties are summarized for the bulk materials and some of the obtained monolayers. In addition, recent experimental progress on the synthesis and measurement of monolayers, such as 1T‐TaS₂, CrI₃, and Cr₂Ge₂Te₆, is reviewed.     

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large‐sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D materials, producing bulk crystals of layered materials or corresponding 2D films. Herein, recent advancements in synthesizing both bulk layered and 2D materials by chemical vapor transport reactions are summarized. Beginning with a brief introduction of the fundamentals of chemical vapor transport reactions, chemical vapor transport–based syntheses of bulk layered and 2D materials, mainly exampled by transition metal dichalcogenides and black phosphorus, are reviewed. Particular attention is paid to important factors that can influence the reactions and the growth mechanisms of black phosphorus. Finally, perspectives about the chemical vapor transport–based synthesis of 2D materials are discussed, intending to redraw attentions on chemical vapor transport reactions.     

The Role of Graphene and Other 2D Materials in Solar Photovoltaics

2D materials have attracted considerable attention due to their exciting optical and electronic properties, and demonstrate immense potential for next‐generation solar cells and other optoelectronic devices. With the scaling trends in photovoltaics moving toward thinner active materials, the atomically thin bodies and high flexibility of 2D materials make them the obvious choice for integration with future‐generation photovoltaic technology. Not only can graphene, with its high transparency and conductivity, be used as the electrodes in solar cells, but also its ambipolar electrical transport enables it to serve as both the anode and the cathode. 2D materials beyond graphene, such as transition‐metal dichalcogenides, are direct‐bandgap semiconductors at the monolayer level, and they can be used as the active layer in ultrathin flexible solar cells. However, since no 2D material has been featured in the roadmap of standard photovoltaic technologies, a proper synergy is still lacking between the recently growing 2D community and the conventional solar community. A comprehensive review on the current state‐of‐the‐art of 2D‐materials‐based solar photovoltaics is presented here so that the recent advances of 2D materials for solar cells can be employed for formulating the future roadmap of various photovoltaic technologies.     

Revisiting the Buckling Metrology Method to Determine the Young's Modulus of 2D Materials

Measuring the mechanical properties of 2D materials is a formidable task. While regular electrical and optical probing techniques are suitable even for atomically thin materials, conventional mechanical tests cannot be directly applied. Therefore, new mechanical testing techniques need to be developed. Up to now, the most widespread approaches require micro‐fabrication to create freely suspended membranes, rendering their implementation complex and costly. Here, a simple yet powerful technique is revisited to measure the mechanical properties of thin films. The buckling metrology method, that does not require the fabrication of freely suspended structures, is used to determine the Young's modulus of several transition metal dichalcogenides (MoS₂, MoSe₂, WS₂, and WSe₂) with thicknesses ranging from 2 to 10 layers. The obtained values for the Young's modulus and their uncertainty are critically compared with previously published results, finding that this simple technique provides results which are in good agreement with those reported using other highly sophisticated testing methods. By comparing the cost, complexity, and time required for the different methods reported in the literature, the buckling metrology method presents certain advantages that make it an interesting mechanical test tool for 2D materials.