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The first example of inkjet-printed, electrolyte-gated organic field-effect transistors, fabricated on flexible polyimide substrates is presented. The interdigitated source and drain electrodes, and the coplanar gate electrodes, are inkjet-printed using a homemade gold nanoparticle ink. A semiconducting ink based on the p-type, organic semiconductor poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b] thiophene)] (DPP-DTT) is formulated and inkjet-printed onto the channel. The performances of inkjet-printed, coplanar devices are compared to those of transistors whose gate electrode consists in a metallic wire inserted in the electrolyte. Printed transistors show excellent electrical properties with field-effect mobility as high as 0.04 cm2 V−1 s−1. The electrical behavior of inkjet-printed, coplanar devices is also modeled using the Nernst–Planck–Poisson (NPP) equations, where the output and transfer curves are calculated based on the charge and potential distribution inside the device. Good quantitative agreement between the simulation and experiments is achieved, outlining the attainable use of NPP simulations as predictive tools for device design and optimization. To demonstrate an example of application, printed transistors are functionalized for the detection of complementary DNA strands. This study opens an avenue for the next generation of low-cost, flexible sensors and circuits, both through experimental studies and device modeling.  相似文献   

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All external sensory stimuli produce a spatiotemporal pattern of action potentials, which is transmitted to the biological neural system to be processed. The relative timing of synaptic spikes from different presynaptic neurons represents the features of the stimuli. A fundamental prerequisite in cortical information processing is the discrimination of different spatiotemporal input sequences. Here, capacitively coupled multiterminal oxide‐based neuro‐transistors are proposed for spatiotemporal information processing, mimicking the dendritic discriminability of different spatiotemporal input sequences. The experimental results demonstrate that such multiterminal neuromorphic devices can act as spatiotemporal information processing compartments for fundamental cortical computation. Also, as an example of spatiotemporal information processing, sound location functionality of the human brain is also emulated by constructing a simple artificial neural network based on such oxide‐based multiterminal neuro‐transistors.  相似文献   

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Developing high‐power cathodes is crucial to construct next‐generation quick‐charge batteries for electric transportation and grid applications. However, this mainly relies on nanoengineering strategies at the expense of low scalability and high battery cost. Another option is provided herein to build high‐power cathodes by exploiting inexpensive bulk graphite as the active electrode material, where anion intercalation is involved. With the assistance of a strong alginate binder, the disintegration problem of graphite cathodes due to the large volume variation of >130% is well suppressed, making it possible to investigate the intrinsic electrochemical behavior and to elucidate the charge storage kinetics of graphite cathodes. Ultrahigh power capability up to 42.9 kW kg?1 at the energy density of >300 Wh kg?1 (based on graphite mass) and long cycling life over 10 000 cycles are achieved, much higher than those of conventional cathode materials for Li‐ion batteries. A self‐activating and capacitive anion intercalation into graphite is discovered for the first time, making graphite a new intrinsic intercalation‐pseudocapacitance cathode material. The finding highlights the kinetical difference of anion intercalation (as cathode) from cation intercalation (as anode) into graphitic carbon materials, and new high‐power energy storage devices will be inspired.  相似文献   

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Transistor-based ion sensors have evolved significantly, but the best-performing ones rely on a liquid electrolyte as an internal ion reservoir between the ion-selective membrane and the channel. This liquid reservoir makes sensor miniaturization difficult and leads to devices that are bulky and have limited mechanical flexibility, which is holding back the development of high-performance wearable/implantable ion sensors. This work demonstrates microfabricated ion-selective organic electrochemical transistors (OECTs) with a transconductance of 4 mS, in which a thin polyelectrolyte film with mobile sodium ions replaces the liquid reservoir. These devices are capable of selective detection of various ions with a fast response time (≈1 s), a super-Nernstian sensitivity (85 mV dec−1), and a high current sensitivity (224 µA dec−1), comparing favorably to other ion sensors based on traditional and emerging materials. Furthermore, the ion-selective OECTs are stable with highly reproducible sensitivity even after 5 months. These characteristics pave the way for new applications in implantable and wearable electronics.  相似文献   

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采用医药级蒙脱石和钠基蒙脱石作载体材料, 通过溶液插层法制备了头孢拉定/蒙脱石插层化合物. 采用紫外分光光度法定量计算其载药量, 采用X射线衍射和傅立叶红外光谱测试定性分析其结构, 研究其层间结构变化情况. 结果表明, 头孢拉定与蒙脱石发生插层反应主要是由于离子交换作用, 简单的物理混合不能使二者发生插层反应. 钠化后的医药级蒙脱石有较好的离子交换特性, 易于发生插层反应. 医药级蒙脱石和头孢拉定在水中进行插层反应后, 蒙脱石的层间距减小; 而钠基蒙脱石和医药级蒙脱石钠化改性后制备的插层化合物层间距均增大.  相似文献   

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A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory.  相似文献   

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An inorganic nano light‐emitting transistor (INLET) consisting of p‐type porous Si nanowires (PoSiNWs) and an n‐type ZnO nanofilm was integrated on a heavily doped p‐type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I–V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g). As the V g is changed from 0 V to ?20 V, the current level and light‐emission intensity in the orange–red range increase by three and two times, respectively, with a forward bias of 20 V in the p–n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built‐in potential at the p–n junction by the applied gate electric field.  相似文献   

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The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.  相似文献   

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A systematic analysis of decoherence rates due to electron–phonon interactions for optical transitions of rare-earth dopant ions in crystals is presented in the frame of the point charge model. For this model, the large value of any one of the matrix elements of the unit tensor operator U ( k ) of rank k for transitions within the 4f-electronic configuration, viz. U2, U4 or U6, is enough to ensure the strong optical transition between different levels, while the Stark–Stark transitions within the multiplet can be characterized by the matrix element U2 alone, the influence of elements U4, U6 being of much smaller order of magnitude and neglected. The circumstance that exactly such Stark–Stark transitions within the multiplet define the efficiency of electron–phonon interaction and, consequently, the decoherence rate (except for the case of lowest, less than approximately 2–4?K, temperatures), enables selection of optical transitions which are strong enough and at the same time are characterized by relatively small decoherence rates. Correspondingly, these optical transitions, provided that they lie in an appropriate spectral range and the gap to the nearest neighboring energy level is large enough (>500?cm?1) to prevent eventual fast phonon-assisted relaxation, should be considered as prospective for subsequent use in quantum informatics processing and communication. The list of such pre-selected transitions is given; the applicability area and limitations of our approach are discussed.  相似文献   

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Accurate sensing of ion concentrations in body fluids is of importance to monitor cell functions, and any deviation of the concentration serves as a warning sign of pathophysiological conditions. Here, a fabrication approach for an integrated device consisting of two electrochemical transistors, capable of selective simultaneous detection between potassium and sodium ions in an analyte is demonstrated. A common in-plane gate electrode is integrated in the substrate, enabling the fabrication of micro-scale ion sensors for biomedical applications. The approach is versatile and can be extended to include numerous ion-selective transistors on a chip in order to meet the demand for simultaneous sensing of multiple ions.  相似文献   

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Bulk AgI based fast ion conducting (FIC) glasses have been prepared by a novel microwave technique. Electrical switching characteristics of these glasses have been investigated for the first time. It has been found that AgI based FIC glasses exhibit a current-controlled high speed memory electrical switching behaviour. SEM, EDAX and ESR investigations have been performed on the virgin and switched sampies to understand the nature of the conducting state. A chemical model is proposed to explain the switching behaviour of these glasses, which is consistent with the observed results.  相似文献   

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张海朗  王文继 《功能材料》2003,34(2):130-132
综述了迄今为止关于镁离子二次电池正极材料的研究。镁离子二次电池称得上是有望用于电动汽车的“绿色”蓄电池。它的原理与锂离子二次电池的相同;但在某些方面比锂离子二次电池更具优势。本文也对今后该领域的研究方向提出了意见。  相似文献   

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