In situ sintered silver decorated 3D structure of cellulose scaffold for highly thermoconductive electromagnetic interference shielding epoxy nanocomposites

This study presents a 3-dimensional (3D) network structure of cellulose scaffold (CS), which was in situ decorated with silver nanoparticles (AgNPs). The scaffold was then infiltrated with epoxy matrix and cured at elevated temperature to sinter the AgNPs; finally, highly thermoconductive epoxy composites (Ag@CS/epoxy) was obtained. The resultant Ag@CS20/epoxy composite reached a thermal conductivity of 2.52 W·m⁻¹·K⁻¹ at 2.2 vol% of filler loading, which shows an enhancement of over 11-folds in the thermal conductivity compared to the neat epoxy. The superb electrical conductivity value of over 53,691 S·m⁻¹ of the Ag@CS20/epoxy was achieved, which led to exceptional EMI SE values of 69.1 dB. Furthermore, surface temperatures during heating and cooling were also investigated to demonstrate the superior heat dissipating capacity of the Ag@CS/epoxy composite, which can be potentially put an application as thermal dissipating material in the next generation of electronics.     

Thermal,electrical, and mechanical properties of Si3N4 filled LLDPE composite

Silicon nitride (Si₃N₄) filled linear low-density polyethylene (LLDPE) composite was prepared. The effects of Si₃N₄ filler content, dispersion, and LLDPE particle size on the thermal conductivity, and Si₃N₄ filled content on the mechanical and electrical properties of Si₃N₄ reinforced LLDPE composites prepared using powder mixing were investigated. The results indicate that there existed a unique dispersion state of Si₃N₄ particles in LLDPE, shell-kernel structure, in which Si₃N₄ particles surrounded LLDPE matrix particles. With increasing filler content and LLDPE particles size, thermal conductivity increased, and reached 1.42 W/m K at 30 vol% of filler, seven times as that of unfilled LLDPE. Furthermore, the examinations of Agari model demonstrate that larger size LLDPE particles form thermal conductive networks easily compared with smaller ones. The values predicted by theoretical model underestimate the thermal conductivity of Si₃N₄/LLDPE composites. In addition, the composites still possessed rather higher electrical resistivity and dielectric properties, but the mechanical properties decreased. POLYM. COMPOS., 2009. © 2008 Society of Plastics Engineers     

High thermal conductive epoxy molding compound with thermal conductive pathway

The epoxy molding compound (EMC) with thermal conductive pathways was developed by structure designing. Three kinds of EMCs with different thermal conductivities were used in this investigation, specifically epoxy filled with Si₃N₄, filled with hybrid Si₃N₄/SiO₂, and filled with SiO₂. Improved thermal conductivity was achieved by constructing thermal conductive pathways using high thermal conductivity EMC (Si₃N₄) in low thermal conductivity EMC (SiO₂). The morphology and microstructure of the top of EMC indicate that continuous network is formed by the filler which anticipates heat conductivity. The highest thermal conductivity of the EMC was 2.5 W/m K, reached when the volume fraction of EMC (Si₃N₄) is 80% (to compare with hybrid Si₃N₄/SiO₂ filled‐EMC, the content of total fillers in the EMC was kept at 60 vol %). For a given volume fraction of EMC (Si₃N₄) in the EMC system, thermal conductivity values increase according to the order EMC (Si₃N₄) particles filled‐EMC, hybrid Si₃N₄/SiO₂ filled‐EMC, and EMC(SiO₂) particles filled‐EMC. The coefficient of thermal expansion (CTE) decreases with increasing Si₃N₄ content in the whole filler. The values of CTE ranged between 23 × 10^?6 and 30 × 10^?6 K^?1. The investigated EMC samples have a flexural strength of about 36–39 MPa. The dielectric constant increases with Si₃N₄ content but generally remains at a low level (<6, at 1 MHz). The average electrical volume resistivity of the EMC samples are higher than 1.4 × 10¹⁰ Ω m, the average electrical surface resistivity of the EMC samples are higher than 6.7 × 10¹⁴ Ω. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Preparation and properties of silicon nitride/glass fiber/epoxy composites

Silicon nitride/glass fiber (Si₃N₄/GF) hybrid fillers are performed to prepare the Si₃N₄/GF/epoxy composites. Results showed the thermal conductivities of the Si₃N₄/GF/epoxy composites that are improved with the addition of Si₃N₄, and the thermal conductive coefficient λ is 1.412 W/mK with 38 vol% modified Si₃N₄/GF hybrid fillers (30 vol% Si₃N₄ + 8 vol% GF), seven times higher than that of pure epoxy resin. The flexural strength and impact strength of the composites are optimal with 13 vol% modified Si₃N₄/GF hybrid fillers (5 vol% Si₃N₄ + 8 vol% GF). The dielectric constant and dielectric loss of the composites are increased with the increasing addition of Si₃N₄. For a given Si₃N₄/GF hybrid fillers loading, the surface modification can further improve the thermal conductivities of the Si₃N₄/GF/epoxy composites. POLYM. COMPOS., 35:1338–1342, 2014. © 2013 Society of Plastics Engineers     

Microstructure and mechanical properties of Si3N4/42CrMo joints brazed with TiNp modified active filler

Si₃N₄ ceramic/42CrMo steel joints were obtained by employing TiNp modified Ag–Cu–Ti active filler and subsequently the effect of TiNp content on the microstructure and mechanical properties of the joints was investigated. Microstructural examination revealed that TiN+Ti₅Si₃ reaction layer was adjacent to the Si₃N₄ ceramic while a TiC reaction layer was close to the steel substrate. With the increase of TiNp content, more fine grains and less Ag–Cu eutectic appeared in the joint and the reaction layers near the two base materials became thinner. The flexural strength of the joint obtained by four-point bending test climbed about 100% with the optimum TiNp content of 5 vol%, comparing with the case without TiNp. Thermal stress distributions in the joint were analyzed using finite element modeling computations, which accorded well with the bending test results.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

Fabrication of Si3N4 ceramics substrates with high thermal conductivity by tape casting and gas pressure sintering

In this paper, high thermal conductivity Si₃N₄ ceramics were successfully fabricated through exploring and optimizing the tape casting process. The impact of various organic additives on the rheological characteristics of Si₃N₄ slurry was explored, and the pore size distribution and microstructure of the green tapes at different solid loadings were investigated, as well as the microstructure of Si₃N₄ ceramics. Green tapes with a narrow pore size distribution, a small average pore size, and a high density of 1.88 g cm⁻³ were prepared by the investigation and optimization of the Si₃N₄ slurry formulation. After gas pressure sintering, Si₃N₄ ceramics with a density of 3.23 g cm⁻³, dimensions of 78 mm × 78 mm, and a thickness of 0.55 mm were obtained. The microstructure of the Si₃N₄ ceramics showed a bimodal distribution and a low content of glassy phases. The thermal conductivity of the Si₃N₄ ceramics was 100.5 W m⁻¹ K⁻¹, the flexural strength was 735 ± 24 MPa, and the fracture toughness was 7.17 MPa m^1/2.     

Mechanically robust,electrically and thermally conductive graphene-based epoxy adhesives

This study develops a facile approach to fabricate adhesives consists of epoxy and cost-effective graphene platelets (GnPs). Morphology, mechanical properties, electrical and thermal conductivity, and adhesive toughness of epoxy/GnP nanocomposite were investigated. Significant improvements in mechanical properties of epoxy/GnP nanocomposites were achieved at low GnP loading of merely 0.5?vol%; for example, Young’s modulus, fracture toughness (K_1C) and energy release rate (G_1C) increased by 71%, 133% and 190%, respectively compared to neat epoxy. Percolation threshold of electrical conductivity is recorded at 0.58?vol% and thermal conductivity of 2.13?W m^?1 K^?1 at 6?vol% showing 4 folds enhancements. The lap shear strength of epoxy/GnP nanocomposite adhesive improved from 10.7?MPa for neat epoxy to 13.57?MPa at 0.375?vol% GnPs. The concluded results are superior to other composites or adhesives at similar fractions of fillers such as single-walled carbon nanotubes, multi-walled carbon nanotubes or graphene oxide. The study promises that GnPs are ideal candidate to achieve multifunctional epoxy adhesives.     

Architectural design and cryogenic synthesis of Si3N4@(TiN–Si3N4) for high conductivity

Si₃N₄@(TiN–Si₃N₄) composites with heteroshelled structure were designed for enhanced conductivity and successfully synthesized through the simultaneous reduction and in‐situ cocoating process in liquid ammonia at around ?40°C. The heteroshells were composed of nanosized TiN and Si₃N₄ particles, which were amorphous with the size ranging from 10 to 40 nm. Using spark plasma sintering, dense bulk composite with >98.1% relative density of theoretical value were obtained and their electrical conductivity were increased to an adequate value (6.62 × 10² S·cm^?1) for electrical discharge machining by compositing 15 vol% TiN to Si₃N₄, which is superior to the previous reports. The excellent electric performance could be attributed to the heteroshelled structure which guarantees the conductive network can be formed and kept with minimal TiN content. The nanosized Si₃N₄ powders in the shells reduce the content of conductive powders and limit the growth of TiN particles.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Mechanical properties of hybrid multilayer graphene/whisker-reinforced ceramic composites: Simulation and experimental investigation

The trial-and-error method used in ceramics research has certain limitations such as the high blindness of material component design. Moreover, calculations of the toughness of ceramics using the extended finite element method, which is the most broadly applied technique, are complicated. To overcome these issues, in this study, multilayer graphene (MLG)/Si₃N₄ whisker (Si₃N_4w)-reinforced Si₃N₄ ceramics (MWSCs) were used as the model material, and the modeling of MWSCs was conducted using Voronoi tessellation. Additionally, a more concise novel approach was applied for the prediction of the fracture toughness of MWSCs. Furthermore, the optimal MLG and Si₃N_4w contents were predicted, and then they were verified by fabricating MWSCs using spark plasma sintering (SPS). Simulation results indicated that the optimum MLG and Si₃N_4w contents to enable the toughness and hardness to reach the maximum values (9.87 MPa·m^1/2 and 23.19 GPa) were 1 wt% and 3 wt%, which were consistent with the experimental results. Consequently, the effectiveness of the proposed method was verified. Moreover, the experimental values of the maximum fracture toughness and hardness were 11.04 MPa·m^1/2 and 20.29 GPa, which were 47.20% and 12.10% higher than those of Si₃N₄ ceramics reinforced with 1 wt% MLG, respectively. The synergistic toughening effects of MLG and Si₃N_4w were significantly reflected. The load-bearing effect, bridging, and crack deflection induced by MLG and Si₃N_4w were the key reasons for the improvement in the mechanical properties of MWSCs.     

Copper bonding silicon nitride substrate using atmosphere plasma spray

Silicon nitride (Si₃N₄) is an excellent engineering ceramic with high strength, fracture toughness, wear resistance, and good chemical and thermal stability. Recently, the enhanced thermal conductivity enables Si₃N₄ to have potential application prospects in the electronic and orthopedic fields. Metal bonding with Si₃N₄ is often the key to these applications. Here we report a facile approach for the titanium-activated Cu bonding on Si₃N₄ substrates using an atmosphere plasma spray (APS) process. With X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) observation, it was shown that the interaction between the pre-bonded Ti (by APS) on Si₃N₄ promoted the adhesion and high bonding strength of APS Cu on Si₃N₄. The interfacial structure and phases were characterized, and tensile strength, electrical resistivity, thermal conductivity, and residual stress of Cu bonded Si₃N₄ were measured accordingly. The APS deposited Cu layer is dense, has a high purity, and is joined firmly with Ti pre-bonded Si₃N₄ substrate. The maximum tensile strength between Cu and Si₃N₄ is as high as 89.4 MPa. The Si₃N₄ substrate bonded with highly dense Cu demonstrates a low surface resistivity of 8.72 × 10⁻⁴ Ω∙mm, and high thermal conductivity of 98.12 W/m·K, which shows potential applications in electronic devices.     

Toughness and R-curve behaviour of laminated Si3N4/SiCw ceramics

Laminated Si₃N₄/SiC_w ceramics were successfully prepared by tape casting and hot-pressing. Its mechanical properties were measured and the impact resistance was discussed. The toughness of the laminated Si₃N₄/SiC_w ceramics was 13.5 MPa m^1/2, which was almost 1.6 times that of Si₃N₄/SiC_w composite ceramics, namely 8.5 MPa m^1/2. Moreover, the indentation strength of laminated Si₃N₄/SiC_w ceramics was not sensitive to increasing indentation loads and exhibited a rising R-curve behaviour, indicating that the laminated Si₃N₄/SiC_w ceramics had excellent impact resistance. The improved toughness and impact resistance of laminated Si₃N₄/SiC_w ceramics was attributed to the residual stress caused by a thermal expansion coefficient mismatch between the different layers, resulting in crack deflection and bridging of SiC whiskers in the interface layer, thus consuming a large amount of fracture work.     

Effect of MgF2 addition on mechanical properties and thermal conductivity of silicon nitride ceramics

Dense silicon nitride (Si₃N₄) ceramics were prepared using Y₂O₃ and MgF₂ as sintering aids by spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering annealing at 1900 °C for 4 h. Effects of MgF₂ contents on densification, phase transformation, microstructure, mechanical properties, and thermal conductivity of the Si₃N₄ ceramics before and after heat treatment were investigated. Results indicated that the initial temperature of liquid phase was effectively decreased, whereas phase transformation was improved as increasing the content of MgF₂. For optimized mechanical properties and thermal conductivity of Si₃N₄, optimum value for MgF₂ content existed. Sample with 3 mol.% Y₂O₃ and 2 mol.% MgF₂ obtained optimum flexural strength, fracture toughness and thermal conductivity (857 MPa, 7.4 MPa m^1/2 and 76 W m⁻¹ K⁻¹, respectively). It was observed that excessive MgF₂ reduced the performance of the ceramic, which was caused by the presence of excessive volatiles.     

Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity

The effect of temperature cycling from ?40 to 250?°C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140?W?m^?1 K^?1 and superior fracture toughness of 10.5?MPa?m^1/2. Other types of AMB substrates made of AlN or Si₃N₄ were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si₃N₄-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si₃N₄-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si₃N₄-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si₃N₄ with high thermal conductivity.     

Preparation,microstructure, and properties of GPS silicon nitride ceramics with β-Si3N4 seeds and nanophase additives

Si₃N₄ ceramics with high thermal conductivity and outstanding mechanical properties were prepared by adding β-Si₃N₄ seeds and nanophase α-Si₃N₄ powders as modifiers. The introduction of β-Si₃N₄ seeds enhanced the growth of β-Si₃N₄ grains. Owing to the interlocked structure induced by the β-Si₃N₄ grains, the fracture toughness of Si₃N₄ ceramics reached a high value of 7.6 MPa·m^1/2; also, the large-sized grains increased the contact possibility of Si₃N₄ grains, improving the thermal conductivity of Si₃N₄ ceramics (64 W/(m·K)). Because of the introduction of nanophase α-Si₃N₄, the flexural strength, fracture toughness, and thermal conductivity of the Si₃N₄ ceramics increased to 754 MPa, 7.2 MPa·m^1/2, and 54 W/(m·K), respectively. According to the analysis of the growth kinetics of Si₃N₄ grains, the rapid growth of Si₃N₄ grains was ascribed to the reduction in the activation energy resulting from the introduction of β-Si₃N₄ seeds and nanophase α-Si₃N₄.     

Effect of ZrB2 on promoting the phase transformation mechanism of Si3N4-based ceramics at low temperature

In this study, the mechanism of the effect of ZrB₂ on phase transformation of Si₃N₄ at a low temperature and the influence of its content on Si₃N₄-based ceramics were investigated. Previous study has shown that oxide impurities, i.e., B₂O₃ and ZrO₂ on ZrB₂ particles, alone cannot contribute to phase transformation of Si₃N₄ at a low temperature. But, the introduction of 0.5 vol% ZrB₂ into Si₃N₄ ceramics can promote the α-β phase transformation of Si₃N₄, which is confirmed to be the role of boron by comparison of the experimental results obtained from the addition of 0.5 vol% Zr and 0.5 vol% B. Increasing the ZrB₂ content from 0 vol% to 2.5 vol% intensifies the α-β phase transformation while decreasing the α phase content of Si₃N₄-based ceramics, accompanied by a slight grain growth, leading to a decrease in hardness. At the same time, aspect ratio and the quantities of elongated grains per square micron increase, and thus the fracture toughness increases significantly. However, when the content of ZrB₂ increases to 5 vol%, the Si₃N₄-based ceramics not only have a substantial decrease in hardness, but also the fracture toughness fails to be effectively improved due to high porosity and the decrease in aspect ratio and the quantity of elongated grains per square micron. The current study demonstrates that the dense Si₃N₄-based ceramics with high hardness and toughness (hardness ∼19.9 ± 0.2 GPa, toughness ∼6.27 ± 0.19 MPa m^1/2) can be prepared successfully at 1600 °C by introducing 0.5 vol% ZrB₂.     

The preparation of silicon nitride ceramics by gelcasting and pressureless sintering

A new gelling system based on the polymerization of hydantion epoxy resin and 3,3′-Diaminodipropylamine (DPTA) was successfully developed for fabricating silicon nitride (Si₃N₄) ceramics. The effects of pH value, the dispersant content, solid volume fraction and hydantion epoxy resin amount on the rheological properties of the Si₃N₄ slurries were investigated. The relative density of green body obtained from the solid loading of 52 vol% Si₃N₄ slurry reached up to 62.7%. As the concentration of hydantion epoxy resin increased from 5 wt% to 20 wt%, the flexural strength of Si₃N₄ green body enhanced from 5.3 MPa to 31.6 MPa. After pressureless sintering at 1780 °C for 80 min, the sintered samples exhibited the unique interlocking microstructure of elongated β-Si₃N₄ grains, which was beneficial to improve the mechanical properties of Si₃N₄ ceramics. The relative density, flexural strength and fracture toughness of Si₃N₄ ceramics reached 97.8%, 687 MPa and 6.5 MPa m^1/2, respectively.     

0D surface modification and 3D silicon carbide network construction for improving the thermal conductivity of epoxy resins

With rapid advances in electronic device miniaturization and increasing power density, high thermal conductivity polymer composites with excellent properties are becoming increasingly significant for the progress of next-generation electronic apparatuses. In this work, a new type of three-dimensional (3D) network silicon carbide (SiC) frame and core-shell SiC@SiO₂ (SiC@SiO₂) were successfully prepared. The effects of different filler forms (dispersed particle filler and three-dimensional continuous filler network) on the thermal conductivity of the composites were compared. The composites based on the three-dimensional filler network exhibited evidently better thermal conductivity improvement rates, compared to their traditional counterparts. The thermal conductivity of the epoxy/SiC@SiO₂ composite having a total filler content of 17.0 vol% was 0.857 W/m/K, 328.5% higher than that of pure epoxy resin. Similarly, the thermal conductivity of the EP/3D-SiC composite having a total filler content of 13.8 vol% was 1.032 W/m/K, 416.0% higher than that of pure epoxy resin. The abovementioned stats were proven via molecular simulations. We estimated the interfacial thermal resistance (ITR) of the EP/3D-SiC composite to be 5.98 × 10^?8 m² K/W, which was an order of magnitude lower than that of the epoxy composites without a 3D network. Simultaneously, computerized molecular simulation technology was used to verify the feasibility of the experiment, which provided new ideas for the preparation of other highly thermally conductive materials.     

Effects of solid loading and calcination temperature on microstructure and properties of porous Si3N4 ceramics by aqueous gelcasting using DMAA system

Herein, a low–toxic N, N–dimethylacrylamide (DMAA) system was used in preparation of porous Si₃N₄ ceramics by aqueous gelcasting, and variations in microstructure and properties with solid loading and calcination temperature were systematically investigated. In the considered solid loading range of 28–44 vol%, all the slurries exhibited superior rheological properties (≤145 mPa⋅s at 95.40 s⁻¹ for 44 vol% solid loading) perfectly suitable for casting. With increasing solid loading, a decreased bulk density (1.71–1.69 g/cm³), volume shrinkage (37.73–13.77%) and flexural strength (46.56–26.75 MPa) of green bodies were obtained, exhibiting better mechanical properties than those derived from the conventional acrylamide (AM) system. Regarding Si₃N₄ ceramics with various solid loadings, the increase in calcination temperature favored the phase transformation α→β–Si₃N₄ and β–Si₃N₄ growth, however, the increased solid loading exhibited an inhibiting effect on those since mass transport in gas phase was blocked due to the disruption of pore connectivity. The resulting microstructure changes imparted Si₃N₄ ceramics increasing flexural strength (110.36–367.88 MPa), fracture toughness (2.54–5.03 MPa⋅m^1/2), as well as decreasing porosity (54.21–41.05%) and pore size (0.38–0.33 μm). This work demonstrates the potential research value of DMAA system in preparing high–performance porous Si₃N₄ ceramics through gelcasting technique.